Switch-mode Power Rectifiers
MBR2535CTG, MBR2545CTG
The MBR2535CTG/45CTG series uses the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:
- Guardring for Stress Protection
- Low Forward Voltage
- 175°C Operating Junction Temperature
- Pb-Free Devices
Mechanical Characteristics
- Case: Epoxy, Molded
- Epoxy Meets UL 94 V−0 @ 0.125 in
- Weight: 1.9 Grams (Approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
- Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
*For additional information on our Pb-Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Schottky Barrier Rectifiers
30 Amperes
35 and 45 Volts
[Diagram: TO-220 package with pins labeled 1, 2, 3, 4 and case style 6]
MARKING DIAGRAM
[Diagram: TO-220 package with pinout and marking details: A=Assembly Location, Y=Year, WW=Work Week, B25x5G=Device Code, X=3 or 4, G=Pb-Free Package, AKA=Diode Polarity]
ORDERING INFORMATION
| Device | Package | Shipping |
| MBR2535CTG | TO-220 (Pb-Free) | 50 Units/Rail |
| MBR2545CTG | TO-220 (Pb-Free) | 50 Units/Rail |
Maximum Ratings
| Rating | Symbol | Value | Unit |
| Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR2535CTG MBR2545CTG | VRRM VRWM VR | 35 45 | V |
| Average Rectified Forward Current (Rated VR, TC = 160°C) Per Device Per Diode | IF(AV) | 30 15 | A |
| Peak Repetitive Forward Current per Diode Leg (Rated VR, Square Wave, 20 kHz, Tc = 150°C) | IFRM | 30 | A |
| Non-Repetitive Peak Surge Current per Diode Leg (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) | IFSM | 150 | A |
| Peak Repetitive Reverse Surge Current (2.0 μs, 1.0 kHz) | IRRM | 1.0 | A |
| Storage Temperature Range | Tstg | -65 to +175 | °C |
| Operating Junction Temperature (Note 1) | TJ | -65 to +175 | °C |
| Voltage Rate of Change (Rated VR) | dv/dt | 10,000 | V/μs |
| ESD Ratings: Machine Model = C Human Body Model = 3B | ESD | > 400 > 8000 | V |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/ROJA
Thermal Characteristics (Per Leg)
| Characteristic | Symbol | Value | Unit |
| Thermal Resistance, Junction-to-Case | ReJc | 1.5 | °C/W |
| Junction-to-Ambient (Note 2) | ROJA | 50 | °C/W |
2. When mounted using minimum recommended pad size on FR-4 board.
Electrical Characteristics (Per Diode)
| Characteristic | Symbol | Condition | Min | Typ | Max | Unit |
| Instantaneous Forward Voltage (Note 3) | VF | IF = 15 A, TJ = 25°C IF = 15 A, TJ = 125°C IF = 30 A, TJ = 25°C IF = 30 A, TJ = 125°C | - - - - | 0.62 0.50 0.82 0.65 | 0.62 0.57 0.82 0.72 | V |
| Instantaneous Reverse Current (Note 3) | IR | Rated dc Voltage, TJ = 25°C Rated dc Voltage, TJ = 125°C | - - | 0.2 9.0 | 0.2 25 | mA |
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.
Graphs
Figure 1. Typical Forward Voltage, Per Leg
[Graph: Instantaneous Forward Current (Amps) vs. Instantaneous Forward Voltage (Volts) for different junction temperatures (TJ = 25°C, 100°C, 125°C, 150°C)]
Figure 2. Typical Reverse Current, Per Leg
[Graph: Reverse Current (mA) vs. Reverse Voltage (Volts) for different junction temperatures (TJ = 25°C, 75°C, 100°C, 125°C, 150°C)]
Figure 3. Current Derating, Per Device
[Graph: Average Forward Current (Amps) vs. Case Temperature (°C) for different conditions (dc, Square Wave) with rated voltage applied and different thermal resistances (ReJc = 1.5°C/W)]
Figure 4. Current Derating, Per Device
[Graph: Average Forward Current (Amps) vs. Ambient Temperature (°C) for different conditions (dc, Square Wave) with rated voltage applied and different thermal resistances (ROJA = 16°C/W with TO-220 Heat Sink, ROJA = 60°C/W No Heat Sink)]
Figure 5. Forward Power Dissipation
[Graph: Average Power Dissipation (Watts) vs. Average Forward Current (Amps) for different load types (Resistive Load, Capacitive Load) and junction temperature (TJ = 125°C)]
Mechanical Case Outline
Package Dimensions
TO-220-3 10.10x15.12x4.45, 2.54P CASE 221A ISSUE AL
[Diagram: Mechanical dimensions of the TO-220 package with labels for A, A1, A2, B, B1, C, D, D1, E, E1, E2, e, e1, H1, L, L1, P, Q, Z. Includes tables for millimeter dimensions.]
NOTES:
- DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 2018.
- CONTROLLING DIMENSION: MILLIMETERS.
- DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.
PIN STYLES
- STYLE 1: PIN 1. BASE, 2. COLLECTOR, 3. EMITTER, 4. COLLECTOR
- STYLE 2: PIN 1. BASE, 2. EMITTER, 3. COLLECTOR, 4. EMITTER
- STYLE 3: PIN 1. CATHODE, 2. ANODE, 3. GATE, 4. ANODE
- STYLE 4: PIN 1. CATHODE, 2. ANODE, 3. GATE, 4. ANODE
- STYLE 5: PIN 1. GATE, 2. DRAIN, 3. SOURCE, 4. DRAIN
- STYLE 6: PIN 1. ANODE, 2. CATHODE, 3. ANODE, 4. CATHODE
- STYLE 7: PIN 1. CATHODE, 2. ANODE, 3. CATHODE, 4. ANODE
- STYLE 8: PIN 1. CATHODE, 2. ANODE, 3. EXTERNAL TRIP/DELAY, 4. ANODE
- STYLE 9: PIN 1. GATE, 2. COLLECTOR, 3. EMITTER, 4. COLLECTOR
- STYLE 10: PIN 1. GATE, 2. SOURCE, 3. DRAIN, 4. SOURCE
- STYLE 11: PIN 1. DRAIN, 2. SOURCE, 3. GATE, 4. SOURCE
- STYLE 12: PIN 1. MAIN TERMINAL 1, 2. MAIN TERMINAL 2, 3. GATE, 4. NOT CONNECTED
DOCUMENT NUMBER: 98ASB42148B
DESCRIPTION: TO-220-3 10.10x15.12x4.45, 2.54P
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