onsemi BYV32-200 Switch-mode Power Rectifier
The onsemi BYV32-200 is an ultrafast rectifier designed for high-efficiency power supply applications. It offers a current rating of 16 Amperes and a voltage rating of 200 Volts, with a fast reverse recovery time (trr = 35 ns).
Features and Benefits
- Low Forward Voltage
- Low Power Loss/High Efficiency
- High Surge Capacity
- 175°C Operating Junction Temperature
- 16 A Total (8 A Per Diode Leg)
- Pb-Free and RoHS Compliant
Applications
- Power Supply – Output Rectification
- Power Management
- Instrumentation
Mechanical Characteristics
- Case: Epoxy, Molded
- Epoxy Meets UL 94 V-0 @ 0.125 in
- Weight: 1.9 Grams (Approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
- Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds
- ESD Rating: Human Body Model 3B, Machine Model C
Maximum Ratings
Rating | Symbol | Value | Unit |
Peak Repetitive Reverse Voltage, Working Peak Reverse Voltage, DC Blocking Voltage | VRRM, VRWM, VR | 200 | V |
Average Rectified Forward Current, TC = 156°C | IF(AV) | 8.0 (Per Leg) 16 (Total Device) | A |
Peak Rectified Forward Current (Square Wave, 20 kHz), TC = 154°C - Per Diode Leg | IFM | 16 | A |
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) | IFSM | 100 | A |
Operating Junction Temperature and Storage Temperature | TJ, TSTG | -65 to +175 | °C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Thermal Characteristics
Characteristic | Conditions | Symbol | Value | Unit |
Maximum Thermal Resistance, Junction-to-Case | Min. Pad | RθJC | 3.0 | °C/W |
Maximum Thermal Resistance, Junction-to-Ambient | Min. Pad | RθJA | 60 | °C/W |
Electrical Characteristics
Characteristic | Symbol | Min | Typical | Max | Unit |
Instantaneous Forward Voltage (Note 1) (IF = 5.0 A, TJ = 100°C) (IF = 20 A, TJ = 25°C) | VF | 0.74 1.01 | 0.85 1.15 | V | |
Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 100°C) (Rated dc Voltage, TJ = 25°C) | IR | 21 3.5 | 600 50 | μA | |
Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/μs) (IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A) | trr | 35 25 | ns |
Note 1: Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Graphs
Figure 1. Typical Forward Voltage, Per Leg: This graph shows the relationship between instantaneous forward voltage (VF) and instantaneous forward current (IF) for the device at different junction temperatures (25°C, 100°C, 175°C).
Figure 2. Maximum Forward Voltage: This graph illustrates the maximum forward voltage drop versus forward current for the device.
Figure 3. Typical Reverse Current, Per Leg: This graph displays the typical reverse current (IR) as a function of reverse voltage (VR) at various junction temperatures. The curves are typical for the highest voltage device in the voltage grouping.
Figure 4. Current Derating, Case, Per Leg: This graph shows the average forward current derating based on case temperature for both DC and square wave conditions.
Figure 5. Current Derating, Ambient, Per Leg: This graph illustrates the average forward current derating based on ambient temperature for both DC and square wave conditions, considering different thermal resistances (RθJA).
Figure 6. Power Dissipation, Per Leg: This graph plots the average power dissipation versus average forward current for the device at TJ = 175°C for both square wave and DC conditions.
Figure 7. Typical Capacitance, Per Leg: This graph shows the typical capacitance (CJ) as a function of reverse voltage (VR) at TJ = 25°C.
Figure 8. Thermal Response, Junction-to-Ambient: This graph illustrates the thermal response (Rt) from junction to ambient for various pulse durations and duty cycles.
Ordering Information
Device | Package | Shipping |
BYV32-200G | TO-220 (Pb-Free) | 50 Units / Rail |
Mechanical Case Outline
The BYV32-200 is supplied in a TO-220-3 package (Case 221A). Detailed dimensions and pin assignments are provided in the mechanical outline drawing.
Pin Styles:
- Style 1: BASE, COLLECTOR, EMITTER, COLLECTOR
- Style 2: BASE, EMITTER, COLLECTOR, EMITTER
- Style 3: CATHODE, ANODE, GATE, ANODE
- Style 4: CATHODE, ANODE, GATE, ANODE
- Style 5: GATE, DRAIN, SOURCE, DRAIN
- Style 6: ANODE, CATHODE, ANODE, CATHODE
- Style 7: CATHODE, ANODE, CATHODE, ANODE
- Style 8: CATHODE, ANODE, EXTERNAL TRIP/DELAY, ANODE
- Style 9: GATE, COLLECTOR, EMITTER, COLLECTOR
- Style 10: GATE, SOURCE, DRAIN, SOURCE
- Style 11: DRAIN, SOURCE, GATE, SOURCE
- Style 12: MAIN TERMINAL 1, MAIN TERMINAL 2, GATE, NOT CONNECTED
Additional Information
Technical Publications:
Technical Library: www.onsemi.com/design/resources/technical-documentation
onsemi Website: www.onsemi.com
Online Support:
Support: www.onsemi.com/support
For additional information, please contact your local Sales Representative.
onsemi, onsemi., and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body.