This document provides detailed technical specifications for the onsemi NTT2023N065M3S, a high-performance Silicon Carbide (SiC) MOSFET. Designed for demanding applications, this component offers superior efficiency and power handling capabilities.
Key Features
- Silicon Carbide (SiC) MOSFET technology
- 650 V Drain-to-Source Voltage (VDSS)
- Low On-Resistance: 23 mΩ typical at VGS = 18 V
- Low Effective Output Capacitance (Coss)
- Ultra Low Gate Charge (Qg)
- 100% UIS Tested
- RoHS Compliant
- T2PAK Package
Applications
- Switch Mode Power Supplies (SMPS)
- Solar Inverters
- Uninterruptible Power Supplies (UPS)
- Energy Storage Systems
- Electric Vehicle (EV) Charging Infrastructure
Technical Overview
The NTT2023N065M3S is engineered for advanced power conversion systems. It features a 650V breakdown voltage and a low on-resistance of 23 mΩ, contributing to reduced conduction losses. Its SiC technology enables higher operating temperatures and switching frequencies compared to traditional silicon MOSFETs. The device is tested for Unclamped Inductive Switching (UIS) to ensure robustness.
Manufacturer Information
For detailed specifications, application notes, and purchasing information, please visit the official onsemi website.
