onsemi Switch-mode Power Rectifiers
DPAK Surface Mount Package
MBRD320G, MBRD330G, MBRD340G, MBRD350G, MBRD360G
These state-of-the-art devices are designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits.
Features
- Extremely Fast Switching
- Extremely Low Forward Drop
- Platinum Barrier with Avalanche Guardrings
- NRVBD and SBRD Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
Mechanical Characteristics:
- Case: Epoxy, Molded
- Weight: 0.4 Gram (Approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
- Lead and Mounting Surface Temperature for Soldering Purposes; 260°C Max. for 10 Seconds
- ESD Ratings:
- Machine Model = C
- Human Body Model = 3B
SCHOTTKY BARRIER RECTIFIERS
3.0 AMPERES, 20 – 60 VOLTS
DPAK CASE 369C
MARKING DIAGRAM
A = Assembly Location*
Y = Year
WW = Work Week
B3x0 = Device Code
X = 2, 3, 4, 5, or 6
G = Pb-Free Package
*The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet.
NOTE: Some of the devices on this data sheet have been DISCONTINUED. Please refer to the table on page 3.
MAXIMUM RATINGS
Rating | Symbol | MBRD/SBRD8 | Unit |
320 330 340 350 360 | |||
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage |
VRRM VRWM VR |
20 30 40 50 60 | V |
Average Rectified Forward Current (TC = +125°C) | IF(AV) | 3 | A |
Peak Repetitive Forward Current, TC = +125°C (Square Wave, Duty = 0.5) |
IFRM | 6 | A |
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) |
IFSM | 75 | A |
Peak Repetitive Reverse Surge Current (2 µs, 1 kHz) | IRRM | 1 | A |
Operating Junction Temperature Range (Note 1) | TJ | -65 to +175 | °C |
Storage Temperature Range | Tstg | -65 to +175 | °C |
Voltage Rate of Change (Rated VR) | dv/dt | 10,000 | V/µs |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RθJA.
THERMAL CHARACTERISTICS
Characteristic | Symbol | Value | Unit |
Maximum Thermal Resistance, Junction-to-Case | RθJC | 6 | °C/W |
Maximum Thermal Resistance, Junction-to-Ambient (Note 2) | RθJA | 80 | °C/W |
2. Rating applies when surface mounted on the minimum pad size recommended.
ELECTRICAL CHARACTERISTICS
Characteristic | Symbol | Value | Unit |
Maximum Instantaneous Forward Voltage (Note 3) IF = 3 Amps, TC = +25°C IF = 3 Amps, TC = +125°C IF = 6 Amps, TC = +25°C IF = 6 Amps, TC = +125°C |
VF | 0.6 0.45 0.7 0.625 |
V |
Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TC = +25°C) (Rated dc Voltage, TC = +125°C) |
IR | 0.2 20 |
mA |
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
Device | Package | Shipping† |
MBRD340T4G SBRD8340T4G-VF01* |
DPAK (Pb-Free) |
2,500 Tape & Reel |
MBRD350T4G | 2,500 Tape & Reel | |
MBRD360T4G | 2,500 Tape & Reel | |
NRVBD360VT4G* | 2,500 Tape & Reel | |
DISCONTINUED (Note 4) | 2,500 Tape & Reel | |
MBRD320G SBRD8320G* SBRD8320G-VF01* MBRD320RLG MBRD320T4G SBRD8320T4G* SBRD8320T4G-VF01* |
DPAK (Pb-Free) |
75 Units / Rail |
MBRD330G SBRD8330G* SBRD8330G-VF01* |
75 Units / Rail | |
MBRD330RLG | 75 Units / Rail | |
MBRD330T4G SBRD8330T4G* SBRD8330T4G-VF01* |
1,800 Tape & Reel | |
MBRD340G SBRD8340G* SBRD8340G-VF01* |
2,500 Tape & Reel | |
MBRD340RLG | 75 Units / Rail | |
SBRD8340T4G* | 75 Units / Rail | |
MBRD350G SBRD8350G* SBRD8350G-VF01* |
75 Units / Rail | |
MBRD350RLG SBRD8350RLG* SBRD8350RLG-VF01* SBRD8350T4G* SBRD8350T4G-VF01* |
1,800 Tape & Reel | |
MBRD360G SBRD8360G* SBRD8360G-VF01* |
2,500 Tape & Reel | |
MBRD360RLG SBRD8360RLG* SBRD8360RLG-VF01* SBRD8360T4G* |
75 Units / Rail |
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
*NRVBD and SBRD Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
4. DISCONTINUED: These devices are not recommended for new design. Please contact your onsemi representative for information. The most current information on these devices may be available on www.onsemi.com.
TYPICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage
Description: This graph shows the relationship between instantaneous forward voltage (VF) and instantaneous forward current (IF) for various junction temperatures (TJ).
Figure 2. Typical Reverse Current
Description: This graph illustrates the typical reverse current (IR) as a function of reverse voltage (VR) for different junction temperatures (TJ). The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficient below rated VR.
Figure 3. Average Power Dissipation
Description: This plot shows the average power dissipation (PF(AV)) versus average forward current (IF(AV)) for different waveforms (Sine Wave, DC, Square Wave) and junction temperatures (TJ).
Figure 4. Current Derating, Case
Description: This graph illustrates the current derating based on case temperature (TC) for different operating conditions (Sine Wave, DC, Square Wave) and junction temperatures (TJ).
Figure 5. Current Derating, Ambient
Description: This graph shows current derating based on ambient temperature (TA) for different operating conditions (Square Wave or Sine Wave) and junction temperatures (TJ), assuming surface mounting on the minimum pad size recommended.
Figure 6. Typical Capacitance
Description: This plot displays the typical capacitance (C) as a function of reverse voltage (VR) at a junction temperature of 25°C.
MECHANICAL CASE OUTLINE
DPAK (SINGLE GAUGE)
CASE 369C, ISSUE G
DATE: 31 MAY 2023
SCALE 1:1
NOTES:
- DIMENSIONING AND TOLERANCING ASME Y14.5M, 1994.
- CONTROLLING DIMENSION: INCHES.
- THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3, AND Z.
- DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE.
- DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY.
- DATUMS A AND B ARE DETERMINED AT DATUM PLANE H.
- OPTIONAL MOLD FEATURE.
DIM | INCHES | MILLIMETERS | ||
MIN. | MAX. | MIN. | MAX. | |
A | 0.086 | 0.094 | 2.18 | 2.38 |
A1 | 0.000 | 0.005 | 0.00 | 0.13 |
b | 0.025 | 0.035 | 0.63 | 0.89 |
b2 | 0.028 | 0.045 | 0.72 | 1.14 |
b3 | 0.180 | 0.215 | 4.57 | 5.46 |
c | 0.018 | 0.024 | 0.46 | 0.61 |
c2 | 0.018 | 0.024 | 0.46 | 0.61 |
D | 0.235 | 0.245 | 5.97 | 6.22 |
E | 0.250 | 0.265 | 6.35 | 6.73 |
e | 0.090 BSC | 2.29 BSC | ||
H | 0.370 | 0.410 | 9.40 | 10.41 |
L | 0.055 | 0.070 | 1.40 | 1.78 |
L1 | 0.114 REF | 2.90 REF | ||
L2 | 0.020 BSC | 0.51 BSC | ||
L3 | 0.035 | 0.050 | 0.89 | 1.27 |
L4 | 0.040 | 1.01 | ||
Z | 0.155 | 3.93 |
GENERIC MARKING DIAGRAM*
IC
XXXXXX = Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
WW = Work Week
G = Pb-Free Package
*This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "", may or may not be present. Some products may not follow the Generic Marking.
RECOMMENDED MOUNTING FOOTPRINT*
*FOR ADDITIONAL INFORMATION ON OUR PB-FREE STRATEGY AND SOLDERING DETAILS, PLEASE DOWNLOAD THE ON SEMICONDUCTOR SOLDERING AND MOUNTING TECHNIQUES REFERENCE MANUAL, SOLDERRM/D.
PIN STYLES
STYLE 1: | STYLE 2: | STYLE 3: | STYLE 4: | STYLE 5: | STYLE 6: | STYLE 7: | STYLE 8: | STYLE 9: | STYLE 10: |
PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR |
PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN |
PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE |
PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE |
PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE |
PIN 1. MT1 2. MT2 3. GATE 4. MT2 |
PIN 1. GATE 2. COLLECTOR 3. EMITTER |
PIN 1. N/C 2. CATHODE 3. RESISTOR ADJUST |
PIN 1. ANODE 2. CATHODE 3. ANODE |
PIN 1. CATHODE 2. ANODE 3. CATHODE 4. ANODE |
DOCUMENT NUMBER: 98AON10527D
DESCRIPTION: DPAK (SINGLE GAUGE)
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ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical-documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT:
For additional information, please contact your local Sales Representative at www.onsemi.com/support/sales