onsemi MJE15032 (NPN) and MJE15033 (PNP) Complementary Silicon Plastic Power Transistors
Designed for use as high-frequency drivers in audio amplifiers.
Features
- High DC Current Gain
- High Current Gain – Bandwidth Product
- TO-220 Compact Package
- Epoxy Meets UL 94 V-0 @ 0.125 in
- Devices are Pb-Free and RoHS Compliant
Maximum Ratings
| Rating | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 250 | Vdc |
| Collector-Base Voltage | VCB | 250 | Vdc |
| Emitter-Base Voltage | VEB | 5.0 | Vdc |
| Collector Current Continuous | Ic | 8.0 | Adc |
| Collector Current - Peak | Ісм | 16 | Adc |
| Base Current | IB | 2.0 | Adc |
| Total Power Dissipation @ Tc = 25°C | PD | 50 | W |
| Derate above 25°C | 0.40 | W/°C | |
| Total Power Dissipation @ TA = 25°C | PD | 2.0 | W |
| Derate above 25°C | 0.016 | W/°C | |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -65 to +150 | °C |
| ESD - Human Body Model | HBM | 3B | V |
| ESD - Machine Model | MM | C | V |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Thermal Characteristics
| Characteristic | Symbol | Max | Unit |
|---|---|---|---|
| Thermal Resistance, Junction-to-Case | ReJc | 2.5 | °C/W |
| Thermal Resistance, Junction-to-Ambient | ROJA | 62.5 | °C/W |
Electrical Characteristics (Tc = 25°C unless otherwise noted)
OFF CHARACTERISTICS
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Emitter Sustaining Voltage (Note 1) (Ic = 10 mAdc, IB = 0) | VCEO(sus) | 250 | Vdc | |
| Collector Cutoff Current (VCB = 250 Vdc, IE = 0) | Ісво | 10 | μAdc | |
| Emitter Cutoff Current (VBE = 5.0 Vdc, Ic = 0) | EBO | 10 | μAdc |
ON CHARACTERISTICS (Note 1)
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| DC Current Gain (Ic = 0.5 Adc, VCE = 5.0 Vdc) | hFE | 70 | ||
| (Ic = 1.0 Adc, VCE = 5.0 Vdc) | 50 | |||
| (Ic = 2.0 Adc, VCE = 5.0 Vdc) | 30 | |||
| Collector-Emitter Saturation Voltage (Ic = 1.0 Adc, IB = 0.1 Adc) | VCE(sat) | 0.5 | Vdc | |
| Base-Emitter On Voltage (Ic = 1.0 Adc, VCE = 5.0 Vdc) | VBE(on) | 1.0 | Vdc |
DYNAMIC CHARACTERISTICS
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Current Gain – Bandwidth Product (Note 2) (Ic = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) | fT | 30 | MHz |
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
- Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
- fT is the frequency at which hFE falls to unity.
Ordering Information
| Device | Package | Shipping |
|---|---|---|
| MJE15032G (Pb-Free) | TO-220 | 50 Units/Rail |
| MJE15033G (Pb-Free) | TO-220 | 50 Units/Rail |
For information on tape and reel specifications, including part orientation and tape sizes, please refer to the Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Additional Information
- For additional information on Pb-Free strategy and soldering details, download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Mechanical Case Outline
TO-220-3 10.10x15.12x4.45, 2.54P CASE 221A ISSUE AL
Package Dimensions (Millimeters)
| DIM | MIN | NOM | MAX | DIM | MIN | NOM | MAX |
|---|---|---|---|---|---|---|---|
| A | 4.07 | 4.45 | 4.83 | e | 2.42 | 2.54 | 2.66 |
| A1 | 1.15 | 1.28 | 1.41 | e1 | 4.83 | 5.08 | 5.33 |
| A2 | 2.04 | 2.42 | 2.79 | H1 | 5.97 | 6.22 | 6.47 |
| b | 1.15 | 1.34 | 1.52 | L | 12.70 | 13.49 | 14.27 |
| b1 | 0.64 | 0.80 | 0.96 | L1 | 2.80 | 3.45 | 4.10 |
| C | 0.36 | 0.49 | 0.61 | Q | 2.54 | 2.79 | 3.04 |
| D | 9.66 | 10.10 | 10.53 | ØP | 3.60 | 3.85 | 4.09 |
| D1 | 8.43 | 8.63 | 8.83 | Z | 3.48 | ||
| E | 14.48 | 15.12 | 15.75 | ||||
| E1 | 12.58 | 12.78 | 12.98 | ||||
| E2 | 1.27 | REF |
Notes:
- DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 2018.
- CONTROLLING DIMENSION: MILLIMETERS.
- DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.
Pin Styles:
- STYLE 1: PIN 1. BASE, 2. COLLECTOR, 3. EMITTER, 4. COLLECTOR
- STYLE 2: PIN 1. BASE, 2. EMITTER, 3. COLLECTOR, 4. EMITTER
- STYLE 3: PIN 1. CATHODE, 2. ANODE, 3. GATE, 4. ANODE
- STYLE 4: PIN 1. CATHODE, 2. ANODE, 3. GATE, 4. ANODE
- STYLE 5: PIN 1. GATE, 2. DRAIN, 3. SOURCE, 4. DRAIN
- STYLE 6: PIN 1. ANODE, 2. CATHODE, 3. ANODE, 4. CATHODE
- STYLE 7: PIN 1. CATHODE, 2. ANODE, 3. CATHODE, 4. ANODE
- STYLE 8: PIN 1. CATHODE, 2. ANODE, 3. EXTERNAL TRIP/DELAY, 4. ANODE
- STYLE 9: PIN 1. GATE, 2. COLLECTOR, 3. EMITTER, 4. COLLECTOR
- STYLE 10: PIN 1. GATE, 2. SOURCE, 3. DRAIN, 4. SOURCE
- STYLE 11: PIN 1. DRAIN, 2. SOURCE, 3. GATE, 4. SOURCE
- STYLE 12: PIN 1. MAIN TERMINAL 1, 2. MAIN TERMINAL 2, 3. GATE, 4. NOT CONNECTED
Graphs and Diagrams
Figure 1. Thermal Response
This graph shows the normalized transient thermal resistance versus time for various duty cycles. It is used to calculate the peak junction temperature based on the power pulse and the thermal resistance.
Figure 2. MJE15032 & MJE15033 Safe Operating Area
This graph indicates the IC - VCE limits of the transistor that must be observed for reliable operation. It shows the maximum collector current versus collector-emitter voltage for different pulse durations and duty cycles.
Figure 3. Power Derating
This graph illustrates how power dissipation is derated based on ambient temperature (TA) and case temperature (TC). It shows the maximum allowable power dissipation at different temperature levels.
Figure 4. NPN – MJE15032 VCE = 5 V DC Current Gain
This graph shows the DC current gain (hFE) versus collector current for the NPN transistor MJE15032 at a constant VCE of 5 V and different temperatures (-55°C, 25°C, 150°C).
Figure 5. PNP – MJE15033 VCE = 5 V DC Current Gain
This graph shows the DC current gain (hFE) versus collector current for the PNP transistor MJE15033 at a constant VCE of 5 V and different temperatures (-55°C, 25°C, 150°C).
Figure 6. NPN – MJE15032 VCE = 5 V VBE(on) Curve
This graph shows the base-emitter voltage (VBE(on)) versus collector current for the NPN transistor MJE15032 at a constant VCE of 5 V and different temperatures (-55°C, 25°C, 150°C).
Figure 7. PNP – MJE15033 VCE = 5 V VBE(on) Curve
This graph shows the base-emitter voltage (VBE(on)) versus collector current for the PNP transistor MJE15033 at a constant VCE of 5 V and different temperatures (-55°C, 25°C, 150°C).
Figure 8. NPN – MJE15032 VCE(sat) IC/IB = 10
This graph shows the collector-emitter saturation voltage (VCE(sat)) versus collector current for the NPN transistor MJE15032 with an IC/IB ratio of 10 at different temperatures (-55°C, 25°C, 150°C).
Figure 9. PNP – MJE15033 VCE(sat) IC/IB = 10
This graph shows the collector-emitter saturation voltage (VCE(sat)) versus collector current for the PNP transistor MJE15033 with an IC/IB ratio of 10 at different temperatures (-55°C, 25°C, 150°C).
Figure 10. NPN – MJE15032 VCE(sat) IC/IB = 20
This graph shows the collector-emitter saturation voltage (VCE(sat)) versus collector current for the NPN transistor MJE15032 with an IC/IB ratio of 20 at different temperatures (-55°C, 25°C, 150°C).
Figure 11. PNP – MJE15033 VCE(sat) IC/IB = 20
This graph shows the collector-emitter saturation voltage (VCE(sat)) versus collector current for the PNP transistor MJE15033 with an IC/IB ratio of 20 at different temperatures (-55°C, 25°C, 150°C).
Figure 12. NPN – MJE15032 VBE(sat) IC/IB = 10
This graph shows the base-emitter saturation voltage (VBE(sat)) versus collector current for the NPN transistor MJE15032 with an IC/IB ratio of 10 at different temperatures (-55°C, 25°C, 150°C).
Figure 13. PNP – MJE15033 VBE(sat) IC/IB = 10
This graph shows the base-emitter saturation voltage (VBE(sat)) versus collector current for the PNP transistor MJE15033 with an IC/IB ratio of 10 at different temperatures (-55°C, 25°C, 150°C).
