onsemi NXH022S120M3F1PTHG F1-22mΩ M3S 6-PACK SiC MOSFET Module

Data Sheet

www.onsemi.com

Product Overview

The NXH022S120M3F1PTHG is a power module containing a 22mΩ / 1200 V SiC MOSFET 6-PACK and a thermistor with HPS DBC in an F1 package.

Features

22 mΩ / 1200 V M3S SiC MOSFET 6PACK
HPS DBC
Thermistor
Options with Pre-Applied Thermal Interface Material (TIM) and without Pre-Applied TIM
Press-Fit Pins
These Devices are Pb-Free, Halide Free and are RoHS Compliant

Schematic Diagram

Figure 1 shows the schematic diagram of the NXH022S120M3F1PTHG.

The diagram illustrates the connections between the six SiC MOSFETs (M1-M6), their gates (G1-G6) and emitters (S1-S6), two thermistor connections (TH1, TH2), and DC positive (DC+) and negative (DC-) bus connections.

Pin Connections and Description

The module has 23 pins. The following table details the pin function:

Pin	Name	Description
1	G2	M2 Gate (Low side switch)
2	S2	M2 Kelvin Emitter (Low side switch)
3	S4	M4 Kelvin Emitter (Low side switch)
4	G4	M4 Gate (Low side switch)
5	S6	M6 Kelvin Emitter (Low side switch)
6	G6	M6 Gate (Low side switch)
7	W	W Terminal
8	DC-3	DC Negative Bus Connection
9	V	V Terminal
10	DC-2	DC Negative Bus Connection
11	U	U Terminal
12	DC-1	DC Negative Bus Connection
13	S1	M1 Kelvin Emitter (High side switch)
14	G1	M1 Gate (High side switch)
15	S3	M3 Kelvin Emitter (High side switch)
16	DC+	DC Positive Bus Connection
17	G3	M3 Gate (High side switch)
18	S5	M5 Kelvin Emitter (High side switch)
19	DC+	DC Positive Bus Connection
20	G5	M5 Gate (High side switch)
21	DC+	DC Positive Bus Connection
22	TH1	Thermistor Connection 1
23	TH2	Thermistor Connection 2

Maximum Ratings

The following table summarizes the maximum ratings for the SiC MOSFET module:

Rating	Symbol	Value	Unit
Drain-Source Voltage	VDSS	1200	V
Gate-Source Voltage	VGS	+22/-10	V
Continuous Drain Current @ Tc = 80°C (TJ = 175°C)	ID	52	A
Pulsed Drain Current (TJ = 150°C)	IDpulse	104	A
Maximum Power Dissipation (TJ = 175°C)	Ptot	135	W
Minimum Operating Junction Temperature	TJMIN	-40	°C
Maximum Operating Junction Temperature	TJMAX	175	°C

Thermal Properties

Rating	Symbol	Value	Unit
Storage Temperature range	Tstg	-40 to 150	°C

Insulation Properties

Rating	Symbol	Value	Unit
Isolation test voltage, t = 1 sec, 60 Hz	Vis	4800	VRMS
Creepage distance		12.7	mm
CTI		600
Substrate Ceramic Material		Al2O3
Substrate Ceramic Material Thickness		0.32	mm

Note: Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters.

Recommended Operating Ranges

Rating	Symbol	Min	Max	Unit
Module Operating Junction Temperature	TJ	-40	150	°C

Note: Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.

Electrical Characteristics

(TJ = 25 °C unless otherwise noted)

SiC MOSFET Characteristics

Parameter	Test Conditions	Symbol	Min	Typ	Max	Unit
Zero Gate Voltage Drain Current	VGS = 0 V, VDS = 1200 V, TJ = 25°C	IDSS			100	μA
Drain-Source On Resistance (Note 1)	VGS = 18 V, ID = 50 A, TJ = 25°C	RDS(ON)		22.6		mΩ
	VGS = 18 V, ID = 50 A, TJ = 125°C			38.6
	VGS = 18 V, ID = 50 A, TJ = 150°C			43.8
	VGS = 18 V, ID = 50 A, TJ = 175°C			50.6
Gate-Source Threshold Voltage	VGS = VDS, ID = 30 mA	VGS(TH)	2.04	2.72	4.4	V
Recommended Gate Voltage		VGOP	-3		+18	V
Gate-to-Source Leakage Current	VGS = +22/-10 V, VDS = 0 V	IGSS			(±1)	uA
Input Capacitance	VGS = 0 V, f = 1 MHz, VDS = 800 V	CISS		3106		pF
Reverse Transfer Capacitance		CRSS		16.5
Output Capacitance		Coss		172.7
Total Gate Charge	VGS = -3/18 V, VDS = 800 V, ID = 50 A	QG(TOTAL)		142		nC
Gate-Source Charge		QGS		13
Gate-Drain Charge		QGD		37

SiC MOSFET Characteristics (Continued)

Parameter	Test Conditions	Symbol	Min	Typ	Max	Unit
Turn-on Delay Time	TJ = 25°C VDS= 800 V, ID = 50 A VGS = -3/18 V, RG = 10 Ω	td(on)		25.75		ns
				25.61


Rise Time	TJ = 25°C VDS= 800 V, ID = 50 A VGS = -3/18 V, RG = 10 Ω	tr		10.4		ns
				8.73


Turn-off Delay Time	TJ = 25°C VDS= 800 V, ID = 50 A VGS = -3/18 V, RG = 10 Ω	td(off)		105.98		ns
				117.56


Fall Time	TJ = 25°C VDS= 800 V, ID = 50 A VGS = -3/18 V, RG = 10 Ω	tf		5.31		ns
				5.17


Turn-on Switching Loss per Pulse	TJ = 25°C VDS= 800 V, ID = 50 A VGS = -3/18 V, RG = 10 Ω	EON		0.66		mJ
				0.83


Turn-off Switching Loss per Pulse	TJ = 25°C VDS= 800 V, ID = 50 A VGS = -3/18 V, RG = 10 Ω	EOFF		0.47		mJ
				0.56


Diode Forward Voltage	ISD = 50 A, VGS = -3V, TJ = 25°C	VSD		5.21		V
	ISD = 50 A, VGS = -3V, TJ = 125°C			5.11
	ISD = 50 A, VGS = -3V, TJ = 150°C			5.02
Thermal Resistance - Chip-to-Case	M1, M2	RthJC		(0.702)		°C/W
Thermal Resistance - Chip-to-Heatsink		RthJH	TBD		°C/W

Thermistor Characteristics

Parameter	Test Conditions	Symbol	Min	Typ	Max	Unit
Nominal Resistance	T = 25°C	R25		5		kΩ
	T = 100°C	R100		457		Ω
	T = 150°C	R150		159.5		Ω
Deviation of R100	T = 100°C	ΔR/R	-5		5	%
Power Dissipation - Recommended Limit	0.15 mA, Non-self-heating Effect	PD		0.1		mW
Power Dissipation - Absolute Maximum	5 mA	PD		34.2		mW
Power Dissipation Constant				1.4		mW/K
B-value	B(25/50), tolerance ±2%		3375			K
B-value	B(25/100), tolerance ±2%		3436			K

Note: Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Typical Characteristics

The following figures illustrate typical characteristics of the M1/M2 SiC MOSFET:

Figure 2. MOSFET Typical Output Characteristic VGS=15V

Figure 3. MOSFET Typical Output Characteristic VGS=18V

Figure 4. MOSFET Typical Output Characteristic VGS=var.

Figure 5. Body Diode Forward Characteristic

Figure 6. RDS(ON) DRAIN to SOURCE ON RESISTANCE vs. Junction Temperature

Figure 7. Reverse Bias Safe Operating Area (RBSOA)

Figure 8. Switching On Loss vs. Drain Current VDS = 800 V

Figure 9. Switching Off Loss vs. Drain Current VDS = 800 V

Figure 10. Switching Off Loss vs. Drain Current VDS = 600 V

Figure 11. Switching On Loss vs. Gate Resistance VDS = 800 V

Figure 12. Switching On Loss vs. Gate Resistance VDS = 600 V

Figure 13. Switching Off Loss vs. Gate Resistance VDS = 800 V

Figure 14. Switching Off Loss vs. Gate Resistance VDS = 600 V

Figure 15. Reverse Recovery Loss vs. Gate Resistance

Figure 16. Reverse Recovery Loss vs. Gate Resistance

Figure 17. di/dt Turn On vs Drain Current

Figure 18. di/dt Turn On vs Gate Resistance

Figure 19. di/dt Turn Off vs Drain Current

Figure 20. di/dt Turn Off vs Gate Resistance

Cauer Networks

Table 1 lists the Cauer Networks parameters:

Cauer Element #	Rth (K/W)	Cth (Ws/K)
1	0.0004	0.0006
2	0.0112	0.0003
3	0.0064	0.0006
4	0.105	0.0013
5	0.1388	0.0071
6	0.2554	0.0215
7	0.1847	0.0576

Ordering Information

Orderable Part Number	Marking	Package	Shipping
NXH022S120M3F1PTHG	NXH022S120M3F1PTHG	F1: Case 180BY Press-fit Pins with pre-applied thermal interface material (TIM) (Pb-Free / Halide Free)	20 Units / Blister Tray

Models: NXH006P120MNF2, NXH022S120M3F1PTHG, NXH006P120MNF2 Sic Mosfet Module, NXH006P120MNF2, Sic Mosfet Module, Mosfet Module, Module

File Info : application/pdf, 10 Pages, 1.50MB

NXH022S120M3F1PTHG

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