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onsemi FQP4N90C / FQPF4N90C N-Channel MOSFET

Product Overview

This document provides detailed specifications for the onsemi FQP4N90C (Discontinued) and FQPF4N90C N-Channel enhancement mode power MOSFETs. Engineered with onsemi's advanced planar stripe and DMOS technology, these components offer reduced on-state resistance, superior switching performance, and high avalanche energy capabilities.

Key Specifications

Voltage: 900 V
Current: 4.0 A
RDS(on): 4.2 Ω (Max.) @ VGS = 10 V, ID = 2.0 A
Gate Charge: Typically 17 nC
Reverse Transfer Capacitance (Crss): Typically 5.6 pF
Testing: 100% Avalanche Tested

Applications

Ideal for use in switched-mode power supplies (SMPS), active power factor correction (PFC) circuits, and electronic lamp ballasts.

Package Options

Available in TO-220 Fullpack (CASE 221AT) and TO-220-3LD (CASE 340AT) packages.

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