onsemi NTMFSCOD8N04XM Power MOSFET
Product Datasheet
Product Overview
The onsemi NTMFSCOD8N04XM is a Power MOSFET featuring a Single N-Channel configuration and DUAL COOL® package. It is designed for 40 V applications with a low on-resistance of 0.78 mΩ (typ.) and a maximum continuous drain current of 310 A.
Key Features:
- Dual Sided Cooling Package
- Latest 40 V Power MOSFET Technology for Motor Drive Applications
- Extreme Lower On-Resistance to Minimize Conduction Losses
- Lower Gate Charge to Minimize Gate Driving and Switching Losses
- Soft Body Diode Reverse Recovery
- Pb-Free, Halogen Free, and RoHS Compliant
Applications:
- Motor Drive
- ORing FET
- Battery Protection
Maximum Ratings
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VDSS | Drain-to-Source Voltage | 40 | V |
| VGS | Gate-to-Source Voltage | ±20 | V |
| ID | Continuous Drain Current (Note 2) | 310 (TC = 25 °C) | A |
| 219 (TC = 100 °C) | A | ||
| PD | Power Dissipation (Note 2) | 135 (TC = 25 °C) | W |
| IDM | Pulsed Drain Current | 1463 (TC = 25 °C, tp = 10 µs) | A |
| TJ, TSTG | Operating Junction and Storage Temperature Range | -55 to +175 | °C |
| IS | Continuous Source-Drain Current (Body Diode) | 150 | A |
| EAS | Single Pulse Avalanche Energy (IPK = 69 A) | 248 | mJ |
| TL | Lead Temperature Soldering Purposes (1/8" from case for 10 s) | 260 | °C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
Notes:
- Surface-mounted on FR4 board using 1 in² pad size, 1 oz Cu pad.
- The entire application environment impacts the thermal resistance values shown; they are not constants and are only valid for the particular conditions noted.
Thermal Characteristics
| Symbol | Parameter | Max | Unit |
|---|---|---|---|
| RθJC | Junction-to-Case (Bottom) – Steady State (Note 2) | 1.1 | °C/W |
| RθJC | Junction-to-Case (Top) - Steady State (Note 2) | 1.7 | °C/W |
| RθJA | Junction-to-Ambient - Steady State (Notes 1, 2) | 39 | °C/W |
Electrical Characteristics
OFF CHARACTERISTICS
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| V(BR)DSS | Drain-to-Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 40 | V | ||
| ΔV(BR)DSS/ΔTJ | Drain-to-Source Breakdown Voltage Temperature Coefficient | ID = 1 mA, Referenced to 25 °C | 15 | mV/°C | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 40 V, TJ = 25 °C | 10 | µA | ||
| VDS = 40 V, TJ = 125 °C | 100 | µA | ||||
| IGSS | Gate-to-Source Leakage Current | VDS = 0 V, VGS = ±20 V | 100 | nA |
ON CHARACTERISTICS (Note 3)
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| RDS(on) | Drain-to-Source On Resistance | VGS = 10 V, ID = 50 A | 0.63 | 0.78 | mΩ | |
| VGS = 7 V, ID = 50 A | 0.86 | 1.25 | mΩ | |||
| VGS(TH) | Gate Threshold Voltage | VGS = VDS, ID = 180 µA | 2.5 | 3.0 | 3.5 | V |
| VGS = VDS, ID = 180 µA | -7 | mV/°C | ||||
| gFS | Forward Trans-conductance | VDS = 5 V, ID = 50 A | 244 | S |
CHARGES & CAPACITANCES
| Symbol | Parameter | Test Conditions | Value | Unit | |
|---|---|---|---|---|---|
| Ciss | Input Capacitance | VGS = 0 V, VDS = 20 V, f = 1 MHz | 4651 | pF | |
| Coss | Output Capacitance | 3319 | |||
| Crss | Reverse Transfer Capacitance | 69 | |||
| QOSS | Output Charge | VGS = 10 V, VDD = 20 V, ID = 50 A | 100 | nC | |
| QG(TOT) | Total Gate Charge | 72 | |||
| QG(TH) | Threshold Gate Charge | 14 | |||
| QGS | Gate-to-Source Charge | 21 | |||
| QGD | Gate-to-Drain Charge | 13 | |||
| VGP | Gate Plateau Voltage | 4.5 | V | ||
| RG | Gate Resistance | f = 1 MHz | 0.65 | 1.2 | Ω |
SWITCHING CHARACTERISTICS (Note 3)
| Symbol | Parameter | Test Conditions | Typ | Unit |
|---|---|---|---|---|
| td(ON) | Turn-On Delay Time | Resistive Load VGS = 0/10 V, VDD = 20 V, ID = 50 A, RG = 2.5 Ω | 28 | ns |
| tr | Rise Time | 10 | ||
| td(OFF) | Turn-Off Delay Time | 45 | ||
| tf | Fall Time | 9.5 |
SOURCE-TO-DRAIN DIODE CHARACTERISTICS
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VSD | Forward Diode Voltage | VGS = 0 V, IS = 50 A, TJ = 25 °C | 0.81 | 1.2 | V | |
| VGS = 0 V, IS = 50 A, TJ = 125 °C | 0.66 | 1.0 | V | |||
| tRR | Reverse Recovery Time | VGS = 0 V, dIS/dt = 100 A/µs, IS = 50 A, VDD = 50 V | 69 | ns | ||
| ta | Charge Time | 36 | ||||
| tb | Discharge Time | 33 | ||||
| QRR | Reverse Recovery Charge | 144 | nC |
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Note 3: Switching characteristics are independent of operating junction temperatures.
Typical Characteristics
Figure 1: On-Region Characteristics
This graph plots Drain Current (ID) in Amperes against Drain-to-Source Voltage (VDS) in Volts. Multiple curves are shown for different Gate-to-Source Voltages (VGS) ranging from 5V to 15V at a junction temperature (TJ) of 25°C. An additional set of curves at VGS = 10V illustrates the effect of varying junction temperatures (TJ = -55°C, 25°C, 175°C).
Figure 2: Transfer Characteristics
This graph shows Drain Current (ID) in Amperes versus Gate-to-Source Voltage (VGS) in Volts. It displays curves for different junction temperatures (TJ = -55°C, 25°C, 175°C) at a constant Drain-to-Source Voltage (VDS) of 5V.
Figure 3: On-Resistance vs. Gate Voltage
This graph illustrates Drain-to-Source On-Resistance (RDS(ON)) in milliohms (mΩ) against Gate-to-Source Voltage (VGS) in Volts. The data is presented for a constant Drain Current (ID) of 50A, showing the influence of junction temperature (TJ = 25°C, 175°C).
Figure 4: On-Resistance vs. Drain Current
This graph plots Drain-to-Source On-Resistance (RDS(ON)) in milliohms (mΩ) against Drain Current (ID) in Amperes. It shows curves for different Gate-to-Source Voltages (VGS = 7V, 10V, 12V) at a junction temperature (TJ) of 25°C.
Figure 5: Capacitance Characteristics
This graph displays various capacitances (CISS, COSS, CRSS) in picofarads (pF) against Drain-to-Source Voltage (VDS) in Volts. The measurements are taken at a Gate-to-Source Voltage (VGS) of 0V and a frequency (f) of 1 MHz, at a junction temperature (TJ) of 25°C.
Figure 6: Gate Charge Characteristics
This graph plots Gate Charge (QG) in nanocoulombs (nC) against Gate-to-Source Voltage (VGS) in Volts. It shows curves for different Drain-to-Source Voltage (VDD) conditions (8V, 20V, 24V) at a constant Drain Current (ID) of 50A.
Figure 7: Resistive Switching Time Variation vs. Gate Resistance
This graph shows various resistive switching times (td(ON), tr, td(OFF), tf) in seconds (sec) against Gate Resistance (RG) in Ohms (Ω). The data is presented for VGS=10V, VDS=20V, ID=50A.
Figure 8: Safe Operating Area (SOA)
This graph plots Drain Current (ID) in Amperes against Drain-to-Source Voltage (VDS) in Volts. It outlines the safe operating area with limits for RDS(ON), IDM, and BVDSS, and shows maximum pulse durations (10µs, 100µs, 1ms, 10ms, 100ms, 1sec).
Figure 9: Avalanche Current vs Pulse Time (UIS)
This graph plots Avalanche Current (IAS) in Amperes against Time in Avalanche (tAV) in seconds (sec). It shows data for different junction temperatures (TJ = 25°C, 125°C, 150°C) for Single Pulse (UIS) conditions.
Figure 10: Transient Thermal Response
This graph shows Effective Transient Thermal Impedance (ZθJC) in °C/W against Rectangular Pulse Duration (t) in seconds (sec). It includes curves for various duty cycles (D=0.00 to D=0.50) and notes on calculating junction temperature (TJM).
Ordering Information
| Device | Device Marking | Package | Shipping |
|---|---|---|---|
| NTMFSC0D8N04XMTWG | 3R | DFN8 5x6 (Pb-Free/Halogen Free) | 3,000 / Tape & Reel |
For information on tape and reel specifications, including part orientation and tape sizes, please refer to the Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Mechanical Case Outline
Package: DFN8 5x6.15, 1.27P, DUAL COOL, CASE 506EG, ISSUE D
Date: 25 AUG 2020
Dimensions (Millimeters):
- A: 0.85-0.95
- A1: 0.05
- A2: 0.10 C
- b: 0.31-0.51
- b1: 0.21-0.41
- C: 0.20-0.30
- D: 4.90-5.10
- D1: 4.80-5.10
- D2: 3.67-3.97
- D3: 2.60 REF
- D4: 0.86 REF
- E: 6.05-6.25
- E1: 5.70-5.90
- E2: 3.38-3.58
- E3: 3.30 REF
- E4: 0.50 REF
- E5: 0.34 REF
- E6: 0.30 REF
- E7: 0.52 REF
- e: 1.27 BSC
- L: 0.56-0.76
- L1: 0.52-0.72
- K: 1.30-1.50
- θ: 0°-12°
Notes:
- Dimensioning and Tolerancing per ASME Y14.5M, 2009.
- Controlling Dimension: Millimeters.
- Coplanarity applies to exposed pads as well as terminals.
- Dimensions D1 and E1 do not include mold flash, protrusions, or gate burrs.
- Seating plane is defined by the terminals. A1 is defined as the distance from the seating plane to the lowest point on the package body.
Generic Marking Diagram:
The marking diagram shows a generic layout. The actual marking includes: XXXXXX (Specific Device Code), A (Assembly Location), Y (Year), WW (Work Week), ZZ (Assembly Lot Code). A Pb-Free indicator ("G") may or may not be present.
For additional information on soldering and mounting techniques, refer to the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Revision History
| Revision | Description of Changes | Date |
|---|---|---|
| 2 | Revision to add figure in the existing datasheet. | 8/27/2025 |
This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made on the noted approval dates.
Legal and Trademarks
DUAL COOL is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
onsemi and onsemi. are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer.
This literature is subject to all applicable copyright laws and is not for resale in any manner.
Additional Information:
Technical Publications: Technical Library: www.onsemi.com/design/resources/technical-documentation
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