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NTMFS4C022N N-Channel MOSFET

High-performance N-Channel MOSFET designed for power applications.

Key Features

Compact SO-8FL package (5x6 mm)
Low On-Resistance (RDS(on)) for minimal conduction losses
Low Gate Charge (Qg) for reduced driver losses
Pb-Free, Halogen Free/BFR Free, and RoHS Compliant

Electrical Specifications

This device offers a Drain-to-Source Voltage (VDSS) of 30V and a low On-Resistance of 1.7 mΩ at 10V Gate-to-Source voltage. It supports a continuous drain current of up to 136A.

Applications

The NTMFS4C022N is suitable for various power management applications where efficiency and compact design are critical. For detailed specifications and application notes, refer to the full datasheet.

For more information, visit the onsemi website.

Models: NTMFS4C022N MOSFET Power Single N-Channel, NTMFS4C022N, MOSFET Power Single N-Channel, Power Single N-Channel, Single N-Channel

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