onsemi NVBLS1D2N08X Power MOSFET

Product Type: Power, Single N-Channel, TOLL MOSFET

Key Specifications: 80 V, 1.1 mΩ RDS(on) MAX, 299 A ID MAX

Features

Low QRR, Soft Recovery Body Diode
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
AEC-Q101 Qualified and PPAP Capable
Pb-Free, Halogen Free/BFR Free and RoHS Compliant

Typical Applications

Synchronous Rectification (SR) in DC-DC and AC-DC
Primary Switch in Isolated DC-DC Converters
Motor Drives
Automotive 48 V Systems

Maximum Ratings

The following table lists the maximum ratings for the NVBLS1D2N08X MOSFET. Stresses exceeding these limits may damage the device, affect functionality, or impact reliability.

Parameter	Symbol	Value	Unit
Drain-to-Source Voltage	V_DSS	80	V
Gate-to-Source Voltage	V_GS	±20	V
Continuous Drain Current	I_D (Tc = 25°C)	299	A
Continuous Drain Current	I_D (Tc = 100°C)	211	A
Power Dissipation	P_D (Tc = 25°C)	197	W
Pulsed Drain Current	I_DM (Tc = 25°C, tp = 100 µs)	1941	A
Operating Junction and Storage Temperature Range	T_J, T_stg	-55 to +175	°C
Source Current (Body Diode)	I_S	332	A
Single Pulse Avalanche Energy (I_PK = 94 A)	E_AS	441	mJ
Lead Temperature for Soldering Purposes (1/8" from case for 10 s)	T_L	260	°C

Note on Ratings: Actual continuous current is limited by thermal and electromechanical application board design. EAS is based on T_J = 25°C, rated I_AS, V_DD = 64 V, V_GS = 10 V, 100% avalanche tested.

Electrical Characteristics

Thermal Characteristics

Parameter	Symbol	Value	Unit
Thermal Resistance, Junction-to-Case	R_θJC	0.76	°C/W
Thermal Resistance, Junction-to-Ambient	R_θJA	30	°C/W

Electrical Characteristics (T_J = 25°C unless otherwise noted)

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage	V_(BR)DSS	V_GS = 0 V, I_D = 1 mA, T_J = 25°C	80			V
Drain-to-Source Breakdown Voltage Temperature Coefficient	ΔV_(BR)DSS/ ΔT_J	I_D = 1 mA, Referenced to 25°C		33		mV/°C
Zero Gate Voltage Drain Current	I_DSS	V_DS = 80 V, T_J = 25°C			1.0	µA
Zero Gate Voltage Drain Current	I_DSS	V_DS = 80 V, T_J = 125°C			250	µA
Gate-to-Source Leakage Current	I_GSS	V_GS = 20 V, V_DS = 0 V			100	nA
ON CHARACTERISTICS
Drain-to-Source On Resistance	R_DS(on)	V_GS = 10 V, I_D = 95 A, T_J = 25°C		0.95	1.1	mΩ
Drain-to-Source On Resistance	R_DS(on)	V_GS = 6 V, I_D = 95 A, T_J = 25°C		1.4		mΩ
Gate Threshold Voltage	V_GS(th)	V_GS = V_DS, I_D = 475 µA, T_J = 25°C	2.4		3.6	V
Gate Threshold Voltage Temperature Coefficient	ΔV_GS(th)/ ΔT_J	V_GS = V_DS, I_D = 475 µA		-7		mV/°C
Forward Transconductance	g_FS	V_DS = 10 V, I_D = 95 A		294		S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance	C_iss	V_DS = 40 V, V_GS = 0 V, f = 1 MHz		8618		pF
Output Capacitance	C_oss			2458		pF
Reverse Transfer Capacitance	C_rss			37		pF
Output Charge	Q_oss			175		nC
Total Gate Charge	Q_G(tot)	V_DD = 64 V, I_D = 95 A, V_GS = 10 V		121		nC
Threshold Gate Charge	Q_G(th)			26		nC
Gate-to-Source Charge	Q_gs			40		nC
Gate-to-Drain Charge	Q_gd			19		nC
Gate Resistance	R_g	f = 1 MHz		0.67		Ω
SWITCHING CHARACTERISTICS
Turn-On Delay Time	t_d(on)	Resistive Load, V_GS = 0/10 V, V_DD = 64 V, I_D = 95 A, R_G = 2.5 Ω		40		ns
Rise Time	t_r			23		ns
Turn-Off Delay Time	t_d(off)			65		ns
Fall Time	t_f			12		ns
SOURCE-TO-DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage	V_SD	I_S = 95 A, V_GS = 0 V, T_J = 25°C	0.83		1.2	V
Forward Diode Voltage	V_SD	I_S = 95 A, V_GS = 0 V, T_J = 125°C		0.67		V
Reverse Recovery Time	t_rr	V_GS = 0 V, I_S = 95 A, dI/dt = 1000 A/µs, V_DD = 64 V, T_J = 25°C		32		ns
Charge Time	t_a			17		ns
Discharge Time	t_b			15		ns
Reverse Recovery Charge	Q_rr			307		nC

Typical Characteristics

Figure 1. On-Region Characteristics

This graph plots Drain Current (ID) versus Drain-Source Voltage (VDS) for various Gate-Source Voltages (VGS) at a junction temperature of 25°C. It illustrates the MOSFET's behavior in the saturation and linear (ohmic) regions.

Figure 2. Transfer Characteristics

This graph shows Drain Current (ID) versus Gate-Source Voltage (VGS) for different junction temperatures (TJ = -55°C, 25°C, 175°C) at a Drain-Source Voltage (VDS) of 5V. It highlights the gate threshold voltage and current transfer efficiency.

Figure 3. On-Resistance vs. Gate Voltage

This graph displays the Drain-to-Source On-Resistance (RDS(on)) in mΩ as a function of Gate-Source Voltage (VGS) at a junction temperature of 25°C. It shows how RDS(on) decreases with increasing VGS.

Figure 4. On-Resistance vs. Drain Current

This graph illustrates the Drain-to-Source On-Resistance (RDS(on)) in mΩ as a function of Drain Current (ID) for different Gate-Source Voltages (VGS) at a junction temperature of 25°C. It shows the impact of current on conduction losses.

Figure 5. Normalized ON Resistance vs. Junction Temperature

This graph plots the normalized ON-Resistance (RDS(on)) versus Junction Temperature (TJ) for a constant Drain Current (ID) of 95A and Gate-Source Voltage (VGS) of 10V. It indicates the temperature dependency of the conduction resistance.

Figure 6. Drain Leakage Current vs Drain Voltage

This graph shows the Drain Leakage Current (IDSS) in nA as a function of Drain-Source Voltage (VDS) for different junction temperatures (TJ = 85°C, 125°C, 150°C) with the Gate-Source Voltage (VGS) set to 0V. It illustrates the off-state leakage characteristics.

Figure 7. Capacitance Characteristics

This graph presents various capacitances (Ciss, Coss, Crss) in pF as a function of Gate-Source Voltage (VGS) at a Drain-Source Voltage (VDS) of 40V and a frequency of 1 MHz. It shows the voltage dependency of input, output, and reverse transfer capacitances.

Figure 8. Gate Charge Characteristics

This graph plots Gate Charge (QG) in nC against VGS, Gate to Source Voltage (V), for a constant VDD of 64V, ID of 95A, and varying VGS values. It illustrates the charge required to switch the MOSFET.

Figure 9. Resistive Switching Time Variation vs. Gate Resistance

This graph shows switching times (td(on), tr, td(off), tf) in seconds as a function of Gate Resistance (RG) in Ohms. It demonstrates how gate resistance affects switching speed under specific test conditions (VDD=64V, ID=95A, VGS=0/10V).

Figure 10. Diode Forward Characteristics

This graph plots Source Current (IS) in Amperes against Body Diode Forward Voltage (VSD) in Volts for different junction temperatures (TJ = 25°C, 125°C) with VGS = 0V. It characterizes the internal body diode's forward conduction.

Figure 11. Safe Operating Area (SOA)

This graph shows the Safe Operating Area (SOA) for the MOSFET, plotting Drain Current (ID) in Amperes against Drain-Source Voltage (VDS) in Volts. It indicates the maximum allowable operating conditions under various pulse durations and temperature limits (TJ = 25°C, TJ = 175°C).

Figure 12. Avalanche Current vs Pulse Time (UIS)

This graph illustrates the Unclamped Inductive Switching (UIS) capability, plotting Avalanche Current (IAS) in Amperes against Time in Avalanche (t) in seconds for different junction temperatures (TJ = 25°C, 100°C, 150°C). It shows the device's ability to withstand avalanche breakdown.

Figure 13. Gate Threshold Voltage vs Junction Temperature

This graph shows the normalized Gate Threshold Voltage (VTH) as a function of Junction Temperature (TJ) for a constant Drain Current (ID) of 475µA. It depicts how the threshold voltage changes with temperature.

Figure 14. Maximum Current vs. Case Temperature

This graph plots the Maximum Drain Current (ID) in Amperes against Case Temperature (TC) in °C. It shows the current derating capability based on the case temperature.

Figure 15. Transient Thermal Response

This graph displays the Effective Transient Thermal Impedance (Z_θJC) in °C/W as a function of Rectangular Pulse Duration (t) in seconds for various duty cycles (D). It is used for calculating transient thermal behavior.

Package Dimensions

The NVBLS1D2N08X is supplied in the H-PSOF8L, 11.68x9.80x2.30 mm, 1.20P package, CASE 100CU, ISSUE F. The dimensions and land pattern recommendations are provided for PCB layout and assembly.

DIM	MILLIMETERS		MILLIMETERS
	MIN	NOM	MAX		MIN	NOM	MAX
A	2.20	2.30	2.40	E5	9.36	9.46	9.56
A1	1.70	1.80	1.90	E6	1.10	1.20	1.30
b	0.70	0.80	0.90	E7	0.15	0.18	0.21
b1	9.70	9.80	9.90
b2	0.35	0.45	0.55
C	0.40	0.50	0.60
D	10.28	10.38	10.48	H	11.58	11.68	11.78
D/2	5.09	5.19	5.29	H/2	5.74	5.84	5.94
D1	10.98	11.08	11.18	H1	7.15	BSC
D2	3.20	3.30	3.40	L	1.90	2.00	2.10
D3	2.60	2.70	2.80	L1	0.60	BSC
D4	4.45	4.55	4.65	L2	0.50	0.60	0.70
D5	3.20	3.30	3.40	L3	0.70	0.80	0.90
D6	0.55	0.65	0.75	θ	10°	REF
E	9.80	9.90	10.00	θ1	10°	REF
E1	7.30	7.40	7.50	aaa	0.20
E2	0.30	0.40	0.50	bbb	0.25
E3	7.40	7.50	7.60	ccc	0.20
E4	8.20	8.30	8.40	ddd	0.20
				eee	0.10

Generic Marking Diagram

The generic marking diagram indicates the placement of the part number (AYWWZZ), assembly location (A), year (Y), work week (WW), assembly lot code (ZZ), and specific device code (XXXX). Note that Pb-Free indicators may or may not be present.

Additional Information and Disclaimers

This document provides technical information for the onsemi NVBLS1D2N08X MOSFET. onsemi disclaims liability for product suitability, accuracy of information, and unauthorized use in critical applications like life support or medical devices. Buyers are responsible for validating parameters and ensuring compliance with all applicable laws and safety standards. onsemi products are not authorized for use in critical components for life support systems or medical devices without explicit authorization.

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