onsemi FJL6920: NPN Triple Diffused Planar Silicon Transistor

Product Overview

The onsemi FJL6920 is a high-performance NPN Triple Diffused Planar Silicon Transistor designed for demanding applications. This transistor features a high Collector-Base Breakdown Voltage (BVCBO) of 1700 V and a low saturation voltage (VCE(sat)) of 3 V (Max.). It is particularly suited for color monitor applications and is manufactured to be Pb-Free, Halide Free, and RoHS Compliant.

Key Features and Applications

  • High Collector-Base Breakdown Voltage: BVCBO = 1700 V
  • Low Saturation Voltage: VCE(sat) = 3 V (Max.)
  • Suitable for Color Monitor applications
  • Pb-Free, Halide Free, and RoHS Compliant
  • Designed for High Voltage Color Display Horizontal Deflection Output

Technical Specifications

This datasheet provides comprehensive technical details including:

  • Absolute Maximum Ratings: Critical parameters such as Collector-Base Voltage, Collector Current, and Junction Temperature.
  • Thermal Characteristics: Information on Thermal Resistance (Junction to Case).
  • Electrical Characteristics: Detailed specifications for various parameters like DC Current Gain (hFE), Saturation Voltages (VCE(sat), VBE(sat)), and Switching Times (tSTG, tf).
  • Typical Characteristics Graphs: Visual representations of device performance under different operating conditions, including Static Characteristic, DC Current Gain, Saturation Voltages, Base-Emitter On Voltage, Resistive Load Switching Time, Forward and Reverse Bias Safe Operating Areas, and Power Derating.
  • Mechanical Case Outline: Detailed dimensions and specifications for the TO-264-3LD package (CASE 340CA).

For detailed specifications and performance data, please refer to the full datasheet available on the onsemi website.

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