onsemi PNP Epitaxial Silicon Transistor BSR16
Part Number: BSR16
Description: PNP General Purpose Amplifier and Switches Requiring Collector Currents to 500 mA
Manufacturer: onsemi
General Purpose Amplifier
- This Device Designed for Use as General Purpose Amplifier and Switches Requiring Collector Currents to 500 mA
- Sourced from Process 63
- See BCW68G for Characteristics
Absolute Maximum Ratings
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| VCEO | Collector-Emitter Voltage | -60 | V |
| VCBO | Collector-Base Voltage | -60 | V |
| VEBO | Emitter-Base Voltage | -5.0 | V |
| IC | Collector Current - Continuous | -800 | mA |
| TJ, TSTG | Operating and Storage Junction Temperature Range | -55 ~ +150 | °C |
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
| Symbol | Parameter | Max. | Unit |
|---|---|---|---|
| PD | Total Device Dissipation Derate above 25°C | 350 2.8 | mW mW/°C |
| ROJA | Thermal Resistance, Junction to Ambient | 357 | °C/W |
3. Device mounted on FR-4 PCB 40 mm × 40 mm x 1.5 mm.
Electrical Characteristics
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS | ||||||
| BV(BR)CEO | Collector-Emitter Breakdown Voltage | IC = -10 mA, IB = 0 | -60 | V | ||
| BV(BR)CBO | Collector-Base Breakdown Voltage | IC = –100 μΑ, IE = 0 | -60 | V | ||
| BV(BR)EBO | Emitter-Base Breakdown Voltage | IE = –10 μΑ, IC = 0 | -5.0 | V | ||
| ICBO | Collector Cut-off Current | VCB = -50 V | -10 | nA | ||
| VCB = -50 V, TA = 150°C | -10 | μΑ | ||||
| ICEX | Collector Cut-off Current | VCE = -30 V, VEB = -0.5 V | -50 | nA | ||
| IBEX | Reverse Base Current | VCE = -30 V, VEB = -3.0 V | -50 | nA | ||
| ON CHARACTERISTICS | ||||||
| hFE | DC Current Gain | IC = -0.1 mA, VCE = -10 V IC = -1.0 mA, VCE = -10 V IC = -10 mA, VCE = -10 V IC = -150 mA, VCE = -10 V IC = -500 mA, VCE = -10 V |
75 100 100 100 50 |
300 | ||
| VCE(sat) | Collector-Emitter Saturation Voltage | IC = -150 mA, IB = –15 mA IC = -500 mA, IB = -50 mA |
-0.4 -1.3 |
-1.6 -2.6 |
V | |
| VBE(sat) | Base-Emitter Saturation Voltage | IC = -150 mA, IB = –15 mA IC = -500 mA, IB = -50 mA |
-0.8 -2.5 |
V | ||
| SMALL SIGNAL CHARACTERISTICS | ||||||
| fT | Current Gain Bandwidth Product | IC = -50 mA, VCE = -20 V, f = 100 MHZ, TA = 25°C | 200 | MHz | ||
| Ccb | Output Capacitance | VCB = -10 V, IE = 0, f = 1.0 MHz | 8.0 | pF | ||
| Ceb | Emitter-Base Capacitance | VCB = -2.0 V, IE = 0, f = 1.0 MHz | 30 | pF | ||
| SWITCHING CHARACTERISTICS | ||||||
| ton | Turn-On Time | VCC = -30 V, IC = -150 mA, IB1 = -15 mA | 45 | ns | ||
| td | Delay Time | 10 | ns | |||
| tr | Rise Time | 40 | ns | |||
| toff | Turn-Off Time | VCC = -6 V, IC = –150 mA, IB1 = IB2 = -15 mA | 100 | ns | ||
| ts | Storage Time | 80 | ns | |||
| tf | Fall Time | 30 | ns | |||
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Package Outline
Package: SOT-23 (TO-236)
Case: 318
Dimensions (MILLIMETERS):
| DIM | MIN | NOM | MAX |
|---|---|---|---|
| A | 0.89 | 1.00 | 1.11 |
| A1 | 0.01 | 0.06 | 0.10 |
| b | 0.37 | 0.44 | 0.50 |
| C | 0.08 | 0.14 | 0.20 |
| D | 2.80 | 2.90 | 3.04 |
| E | 1.20 | 1.30 | 1.40 |
| e | 1.78 | 1.90 | 2.04 |
| L | 0.30 | 0.43 | 0.55 |
| L1 | 0.35 | 0.54 | 0.69 |
| HE | 2.10 | 2.40 | 2.64 |
Notes:
- 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 2018.
- 2. CONTROLLING DIMENSIONS: MILLIMETERS.
- 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL.
- 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.
Generic Marking Diagram:
XXX = Specific Device Code
M = Date Code
Pb-Free indicator, "G" or microdot "•", may or may not be present. Some products may not follow the Generic Marking.
Recommended Mounting Footprint:
* For additional information on our Pb-Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Ordering Information
| Device | Package | Shipping† |
|---|---|---|
| BSR16 | SOT-23 (Pb-Free) | 3,000 / Tape & Reel |
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
Additional Information
Technical Publications:
Technical Library: www.onsemi.com/design/resources/technical-documentation
onsemi Website: www.onsemi.com
Online Support:
For additional information, please contact your local Sales Representative at www.onsemi.com/support/sales
