onsemi BUL45D2G
High Speed, High Gain Bipolar NPN Power Transistor
With Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
Product Overview
The BUL45D2G is a state-of-the-art High Speed High gain BiPolar transistor (H2BIP). Its high dynamic characteristics and lot-to-lot minimum spread (±150 ns on storage time) make it ideally suitable for light ballast applications. Therefore, there is no need to guarantee an hFE window. Its characteristics also make it suitable for PFC applications.
Features
- Low Base Drive Requirement
- High Peak DC Current Gain
- Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread
- Integrated Collector-Emitter Free Wheeling Diode
- Fully Characterized and Guaranteed Dynamic VCE(sat)
- "6 Sigma" Process Providing Tight and Reproducible Parameter Spreads
- These Devices are Pb-Free and are RoHS Compliant
Maximum Ratings
W W/°C| Symbol | Rating | Value | Unit |
|---|---|---|---|
| VCEO(sus) | Collector-Emitter Sustaining Voltage | 400 | Vdc |
| VCBO | Collector-Base Breakdown Voltage | 700 | Vdc |
| VCES | Collector-Emitter Breakdown Voltage | 700 | Vdc |
| VEBO | Emitter-Base Voltage | 12 | Vdc |
| IC | Collector Current - Continuous | 5 | Adc |
| ICM | Collector Current - Peak (Note 1) | 10 | Adc |
| IB | Base Current - Continuous | 2 | Adc |
| IBM | Base Current - Peak (Note 1) | 4 | Adc |
| PD | Total Device Dissipation @ Tc = 25°C | 75 | |
| Derate above 25°C | 0.6 | ||
| TJ, Tstg | Operating and Storage Temperature | -65 to +150 | °C |
Note 1: Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
For additional information on our Pb-Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Marking Diagram
BUL45D2G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb-Free Package
Ordering Information
| Device | Package | Shipping |
|---|---|---|
| BUL45D2G | TO-220 (Pb-Free) | 50 Units / Rail |
Thermal Characteristics
| Symbol | Characteristics | Max | Unit |
|---|---|---|---|
| ReJC | Thermal Resistance, Junction-to-Case | 1.65 | °C/W |
| ROJA | Thermal Resistance, Junction-to-Ambient | 62.5 | °C/W |
| TL | Maximum Lead Temperature for Soldering Purposes 1/8" from Case for 5 Seconds | 260 | °C |
Electrical Characteristics
OFF CHARACTERISTICS
| Symbol | Characteristic | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VCEO(sus) | Collector-Emitter Sustaining Voltage (Ic = 100 mA, L = 25 mH) | 400 | 450 | Vdc | |
| VCBO | Collector-Base Breakdown Voltage (ICBO = 1 mA) | 700 | 910 | Vdc | |
| VEBO | Emitter-Base Breakdown Voltage (IEBO = 1 mA) | 12 | 14.1 | Vdc | |
| ICEO | Collector Cutoff Current (VCE = Rated VCEO, IB = 0) | 100 | μAdc | ||
| ICES | Collector Cutoff Current (VCE = Rated VCES, VEB = 0) | @ Tc = 25°C | 100 | μAdc | |
| @ Tc = 125°C | 500 | ||||
| EBO | Emitter-Cutoff Current (VEB = 10 Vdc, Ic = 0) | @ Tc = 125°C | 100 | μAdc |
ON CHARACTERISTICS
| Symbol | Characteristic | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|---|
| VBE(sat) | Base-Emitter Saturation Voltage (Ic = 0.8 Adc, IB = 80 mAdc) | @ Tc = 25°C | 0.8 | 1 | Vdc | |
| @ Tc = 125°C | 0.7 | 0.9 | ||||
| VCE(sat) | Collector-Emitter Saturation Voltage (Ic = 2 Adc, IB = 0.4 Adc) | @ Tc = 25°C | 0.89 | 1 | Vdc | |
| @ TC = 125°C | 0.79 | 0.9 | ||||
| (Ic = 0.8 Adc, IB = 80 mAdc) @ Tc = 25°C | 0.28 | 0.4 | Vdc | |||
| @ Tc = 125°C | 0.32 | 0.5 | ||||
| (Ic = 2 Adc, IB = 0.4 Adc) @ Tc = 25°C | 0.32 | 0.5 | Vdc | |||
| @ Tc = 125°C | 0.38 | 0.6 | ||||
| (Ic = 0.8 Adc, IB = 40 mAdc) @ Tc = 25°C | 0.46 | 0.62 | Vdc | |||
| @ Tc = 125°C | 0.75 | |||||
| hFE | DC Current Gain (Ic = 0.8 Adc, VCE = 1 Vdc) | @ Tc = 25°C | 22 | 34 | - | |
| @ Tc = 125°C | 20 | 29 | - | |||
| (Ic = 2 Adc, VCE = 1 Vdc) | @ Tc = 25°C | 10 | 14 | - | ||
| @ Tc = 125°C | 7 | 9.5 | - |
Diode Characteristics
| Symbol | Characteristic | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|---|
| VEC | Forward Diode Voltage (IEC = 1 Adc) | @ Tc = 25°C | 1.04 | 1.5 | V | |
| @ Tc = 125°C | 0.7 | |||||
| (IEC = 2 Adc) @ Tc = 25°C | 1.2 | 1.6 | V | |||
| @ Tc = 125°C | ||||||
| (IEC = 0.4 Adc) @ Tc = 25°C | 0.85 | 1.2 | V | |||
| @ Tc = 125°C | 0.62 |
Electrical Characteristics (continued)
Diode Characteristics
| Symbol | Characteristic | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Tfr | Forward Recovery Time (see Figure 27) (IF = 1 Adc, di/dt = 10 A/µs) @ Tc = 25°C | 330 | 360 | ns | |
| (IF = 2 Adc, di/dt = 10 Α/µs) @ Tc = 25°C | 320 | ns | |||
| (IF = 0.4 Adc, di/dt = 10 A/µs) @ Tc = 25°C | ns |
Dynamic Characteristics
| Symbol | Characteristic | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| fT | Current Gain Bandwidth (Ic = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz) | 15 | MHz | ||
| Cob | Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz) | 50 | 75 | pF | |
| Cib | Input Capacitance (VEB = 8 Vdc) | 340 | 500 | pF |
Dynamic Saturation Voltage
| Symbol | Characteristic | Unit | ||||
|---|---|---|---|---|---|---|
| VCE(dsat) | Dynamic Saturation Voltage: Ic = 1 A, IB1 = 100 mA, Vcc = 300 V Determined 1 µs and 3 µs respectively after rising IB1 reaches 90% of final IB1 | @ 1 µs @ Tc = 25°C | 3.7 | V | ||
| @ 3 µs @ Tc = 125°C | 9.4 | |||||
| @ 3 µs @ Tc = 25°C | 0.35 | V | ||||
| @ Tc = 125°C | 2.7 | |||||
| Ic = 2 A, IB1 = 0.8 A, Vcc = 300 V | @ 1 µs @ Tc = 25°C | 3.9 | V | |||
| @ Tc = 125°C | 12 | |||||
| @ 3 µs @ Tc = 25°C | 0.4 | V | ||||
| @ Tc = 125°C | 1.5 |
Switching Characteristics: Resistive Load (D.C. ≤ 10%, Pulse Width = 20 μς)
| Characteristic | Tc | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|---|
| ton | Turn-on Time (Ic = 2 Adc, IB1 = 0.4 Adc, IB2 = 1 Adc, Vcc = 300 Vdc) | @ 25°C | 90 | 150 | ns | |
| @ 125°C | 105 | |||||
| toff | Turn-off Time | @ 25°C | 1.15 | 1.3 | µs | |
| @ 125°C | 1.5 | |||||
| ton | Turn-on Time (Ic = 2 Adc, IB1 = 0.4 Adc, IB2 = 0.4 Adc, Vcc = 300 Vdc) | @ 25°C | 90 | 150 | ns | |
| @ 125°C | 110 | |||||
| toff | Turn-off Time | @ 25°C | 2.1 | 2.4 | µs | |
| @ 125°C | 3.1 |
Switching Characteristics: Inductive Load (Vclamp = 300 V, Vcc = 15 V, L = 200 μΗ)
| Characteristic | Tc | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|---|
| tf | Fall Time (Ic = 1 Adc, IB1 = 100 mAdc, IB2 = 500 mAdc) | @ 25°C | 90 | 150 | ns | |
| @ 125°C | 93 | |||||
| ts | Storage Time | @ 25°C | 0.72 | 0.9 | µs | |
| @ 125°C | 1.05 | |||||
| tc | Crossover Time | @ 25°C | 95 | 150 | ns | |
| @ 125°C | 95 | |||||
| tf | Fall Time (Ic = 2 Adc, IB1 = 0.4 Adc, IB2 = 0.4 Adc) | @ 25°C | 80 | 150 | ns | |
| @ 125°C | 105 | |||||
| ts | Storage Time | @ 25°C | 1.95 | 2.25 | µs | |
| @ 125°C | 2.9 | |||||
| tc | Crossover Time | @ 25°C | 225 | 300 | ns | |
| @ 125°C | 450 |
Typical Static Characteristics
Figure 1. DC Current Gain @ 1 Volt
Description: Graph showing DC Current Gain (hFE) versus Collector Current (IC) in Amps for VCE = 1 Volt, with curves for different Junction Temperatures (TJ) of -20°C, 25°C, and 125°C.
Figure 2. DC Current Gain @ 5 Volt
Description: Graph showing DC Current Gain (hFE) versus Collector Current (IC) in Amps for VCE = 5 Volt, with curves for different Junction Temperatures (TJ) of -20°C, 25°C, and 125°C.
Figure 3. Collector Saturation Region
Description: Graph showing VCE(sat) (Volts) versus IB (Base Current) in Amps for different IC values (1 A, 2 A, 3 A, 4 A, 5 A) and Junction Temperatures (TJ) of -20°C and 25°C.
Figure 4. Collector-Emitter Saturation Voltage
Description: Graph showing VCE(sat) (Volts) versus IC (Collector Current) in Amps for IC/IB = 5, with curves for different Junction Temperatures (TJ) of -20°C and 25°C.
Figure 5. Collector-Emitter Saturation Voltage
Description: Graph showing VCE(sat) (Volts) versus IC (Collector Current) in Amps for IC/IB = 10, with curves for different Junction Temperatures (TJ) of -20°C and 25°C.
Figure 6. Collector-Emitter Saturation Voltage
Description: Graph showing VCE(sat) (Volts) versus IC (Collector Current) in Amps for IC/IB = 20, with curves for different Junction Temperatures (TJ) of -20°C and 25°C.
Figure 7. Base-Emitter Saturation Region
Description: Graph showing VBE (Volts) versus IC (Collector Current) in Amps for IC/IB = 5, with curves for different Junction Temperatures (TJ) of -20°C, 25°C, and 125°C.
Figure 8. Base-Emitter Saturation Region
Description: Graph showing VBE (Volts) versus IC (Collector Current) in Amps for IC/IB = 10, with curves for different Junction Temperatures (TJ) of -20°C, 25°C, and 125°C.
Figure 9. Base-Emitter Saturation Region
Description: Graph showing VBE (Volts) versus IC (Collector Current) in Amps for IC/IB = 20, with curves for different Junction Temperatures (TJ) of -20°C, 25°C, and 125°C.
Figure 10. Forward Diode Voltage
Description: Graph showing Forward Diode Voltage (Volts) versus Reverse Emitter-Collector Current (Amps) for Junction Temperatures of 25°C and 125°C.
Figure 11. Capacitance
Description: Graph showing Capacitance (Cib and Cob) in pF versus VR, Reverse Voltage in Volts. Includes test conditions for f = 1 MHz.
Figure 12. BVCER = f(ICER)
Description: Graph showing BVCER (Volts) versus RBE (Ohms) for different conditions: BVCER @ 10 mA and BVCER(sus) @ 200 mA.
Typical Switching Characteristics
Figure 13. Resistive Switch Time, ton
Description: Graph showing ton (Time) in ns versus IC, Collector Current (Amps) for Vcc = 300 V, PW = 20 μs, with curves for IC/IB ratios of 5 and 10, and Junction Temperatures of 25°C and 125°C.
Figure 14. Resistive Switch Time, toff
Description: Graph showing toff (Time) in µs versus IC, Collector Current (Amps) for Vcc = 300 V, PW = 20 μs, with curves for IC/IB ratios of 5 and 10, and Junction Temperatures of 25°C and 125°C.
Figure 15. Inductive Storage Time, tsi @ IC/IB = 5
Description: Graph showing tsi (Time) in µs versus IC, Collector Current (Amps) for Vcc = 15 V, Vz = 300 V, Lc = 200 μΗ, with curves for Junction Temperatures of 25°C and 125°C.
Figure 16. Inductive Storage Time, tsi @ IC/IB = 10
Description: Graph showing tsi (Time) in µs versus IC, Collector Current (Amps) for Vcc = 15 V, Vz = 300 V, Lc = 200 μΗ, with curves for Junction Temperatures of 25°C and 125°C.
Figure 17. Inductive Switching, tc & tfi @ IC/IB = 5
Description: Graph showing tc and tfi (Time) in µs versus IC, Collector Current (Amps) for Vcc = 15 V, Vz = 300 V, Lc = 200 μΗ, with curves for Junction Temperatures of 25°C and 125°C.
Figure 18. Inductive Switching, tfi @ Ic/IB = 10
Description: Graph showing tfi (Time) in ns versus IC, Collector Current (Amps) for Vcc = 15 V, Vz = 300 V, Lc = 200 μΗ, with curves for Junction Temperatures of 25°C and 125°C.
Figure 19. Inductive Switching, tc @ Ic/IB = 10
Description: Graph showing tc (Time) in ns versus IC, Collector Current (Amps) for Vcc = 15 V, Vz = 300 V, Lc = 200 μΗ, with curves for Junction Temperatures of 25°C and 125°C.
Figure 20. Inductive Storage Time
Description: Graph showing tsi (Storage Time) in µs versus hFE, Forced Gain, for Vcc = 15 V, Vz = 300 V, Lc = 200 μΗ, with curves for Ic = 1 A and Ic = 2 A, and Junction Temperatures of 25°C and 125°C.
Figure 21. Inductive Fall Time
Description: Graph showing tfi (Fall Time) in ns versus hFE, Forced Gain, for Vcc = 15 V, Vz = 300 V, Lc = 200 μΗ, with curves for Ic = 1 A and Ic = 2 A, and Junction Temperatures of 25°C and 125°C.
Figure 22. Inductive Crossover Time
Description: Graph showing tc (Crossover Time) in ns versus hFE, Forced Gain, for Vcc = 15 V, Vz = 300 V, Lc = 200 μΗ, with curves for Ic = 1 A and Ic = 2 A, and Junction Temperatures of 25°C and 125°C.
Figure 23. Inductive Storage Time, tsi
Description: Graph showing tsi (Time) in ms versus IC, Collector Current (Amps) for Vcc = 15 V, Vz = 300 V, Lc = 200 μΗ, with curves for different IB values (50 mA, 100 mA, 200 mA, 500 mA, 1 A) and Junction Temperatures of 25°C and 125°C.
Figure 24. Forward Recovery Time tfr
Description: Graph showing tfr (Time) in ns versus IF, Forward Current (Amp) for dl/dt = 10 A/µs and Tc = 25°C.
Figure 25. Dynamic Saturation Voltage Measurements
Description: Timing diagram illustrating dynamic saturation voltage measurements, showing VCE and IB waveforms over time, with markers for 1 μs and 3 μs.
Figure 26. Inductive Switching Measurements
Description: Timing diagram illustrating inductive switching measurements, showing Ic, IB, VCE, and Vclamp waveforms over time, with markers for various switching times (tfi, tsi, tc).
Figure 27. tfr Measurements
Description: Timing diagram illustrating forward recovery time (tfr) measurements, showing VF and IF waveforms over time, with markers for 10% IF and 0.1 VF.
Table 1. Inductive Load Switching Drive Circuit
Description: Schematic diagram of an inductive load switching drive circuit, including components such as transistors (MPF930, MTP8P10, MJE210, MTP12N10), resistors, capacitors, and diodes (MUR105). It also shows typical waveforms for VCE and IB during inductive switching.
Typical Characteristics (continued)
Figure 28. Forward Bias Safe Operating Area
Description: Graph showing Safe Operating Area (SOA) for forward bias conditions. The Y-axis represents IC, Collector Current (Amps), and the X-axis represents VCE, Collector-Emitter Voltage (Volts). It includes curves for different time durations (1 μs, 10 μs, 100 μs, 1 ms, 5 ms, EXTENDED SOA) and a thermal derating curve.
Figure 29. Reverse Bias Safe Operating Area
Description: Graph showing Safe Operating Area (SOA) for reverse bias conditions. The Y-axis represents IC, Collector Current (Amps), and the X-axis represents VCE, Collector-Emitter Voltage (Volts). It includes curves for different reverse bias voltages (-1.5 V, -5 V) and Junction Temperatures (TC ≤ 125°C) with a minimum gain of 5.
Figure 30. Forward Bias Power Derating
Description: Graph showing Power Derating Factor versus TC, Case Temperature (°C). It includes curves for Thermal Derating and Second Breakdown Derating.
Figure 31. Typical Thermal Response (Zėjc(t)) for BUL45D2
Description: Graph showing Normalized Transient Thermal Resistance (r(t)) versus Time (t) in ms. It includes curves for single pulse and multiple pulses (duty cycle D = t1/t2), with formulas for calculating junction temperature and thermal resistance.
Additional Information
Technical Publications
Technical Library: www.onsemi.com/design/resources/technical-documentation
onsemi Website: www.onsemi.com
Online Support
Online Support: www.onsemi.com/support
For additional information, please contact your local Sales Representative at www.onsemi.com/support/sales.
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