onsemi PZTA96ST1G High Voltage Transistor

This document provides detailed information for the onsemi PZTA96ST1G, a high voltage PNP silicon transistor. It is designed for applications requiring high voltage capabilities and is compliant with Pb-Free, Halogen Free/BFR Free, and RoHS standards.

Features

Maximum Ratings

RatingSymbolValueUnit
Collector-Emitter VoltageVCEO-450Vdc
Collector-Base VoltageVCBO-450Vdc
Emitter-Base VoltageVEBO-5.0Vdc
Collector CurrentIC-500mAdc
Total Power Dissipation Up to TA = 25°C (Note 1)PD1.5W
Storage Temperature RangeTstg-65 to +150°C
Junction TemperatureTJ150°C

Note 1: Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in².

Thermal Characteristics

CharacteristicSymbolMaxUnit
Thermal Resistance, Junction-to-Ambient (Note 2)ROJA83.3°C/W

Note 2: Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 in².

Electrical Characteristics

Note 3: TA = 25°C unless otherwise noted.

CharacteristicSymbolMinMaxUnit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0)V(BR)CEO-450Vdc
Collector-Emitter Breakdown Voltage (IC = -100 µAdc, IE = 0)V(BR)CBO-450Vdc
Emitter-Base Breakdown Voltage (IE = -10 µAdc, Ic = 0)V(BR)EBO-5.0Vdc
Collector-Base Cutoff Current (VCB = -400 Vdc, IE = 0)ICBO-0.1µAdc
Emitter-Base Cutoff Current (VBE = -4.0 Vdc, Ic = 0)IEBO-0.1µAdc
ON CHARACTERISTICS
DC Current Gain (Note 4) (IC = 10 mAdc, VCE = 10 Vdc)hFE50150
Saturation VoltagesVdc
(IC = -20 mAdc, IB = -2.0 mAdc)VCE(sat)-0.6
(IC = -20 mAdc, IB = -2.0 mAdc)VBE(sat)-1.0

Note 4: Pulse Test: Pulse Width ≤ 300 µs; Duty Cycle = 2.0%.

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Typical Characteristics

Figure 1. DC Current Gain

Graph showing DC Current Gain (hFE) versus Collector Current (IC) at different temperatures (VCE = 10 V).

Figure 2. Collector-Emitter Saturation Voltage

Graph showing Collector-Emitter Saturation Voltage (VCE(sat)) versus Collector Current (IC) at different temperatures (IC/IB = 10).

Figure 3. Base-Emitter Saturation Voltage

Graph showing Base-Emitter Saturation Voltage (VBE(sat)) versus Collector Current (IC) at different temperatures (IC/IB = 10).

Figure 4. Base-Emitter "On" Voltage

Graph showing Base-Emitter "On" Voltage (VBE(on)) versus Collector Current (IC) at different temperatures (IC/IB = 10, VCE = 10 V).

Figure 5. Capacitances

Graph showing Capacitances (Cib, Cob) versus Reverse Voltage (VR).

Figure 6. Current-Gain-Bandwidth Product

Graph showing Current-Gain-Bandwidth Product (fT) versus Collector Current (IC) at VCE = 2 V.

Ordering Information

DevicePackageShipping†
PZTA96ST1GSOT-223 (Pb-Free)1000/Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to onsemi's Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Package Mechanical Outline

The PZTA96ST1G is supplied in the SOT-223 (TO-261) package, Case 318E.

Figure: Mechanical Case Outline

Diagram showing the SOT-223 package dimensions with labels for A, A1, b, b1, c, D, E, e, L, L1, and He. Includes top view, side view, and front view.

Recommended Mounting Footprint

Diagram showing the recommended footprint for the SOT-223 package.

Marking Diagram

Diagram illustrating the generic marking for the SOT-223 package, including Assembly Location (A), Year (Y), Work Week (W), and Specific Device Code (XXXXX). Indicates that the Pb-Free indicator may or may not be present.

Additional Information

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