onsemi AFGBP40T120SWD
IGBT – Power, Co-PAK N-Channel, Field Stop VII (FS7), SW, BPAK
1200 V, 1.4 V, 40 A
Product Preview
Description
Utilizing the novel field stop 7th generation IGBT technology and the Gen7 Diode in a top-side cooled package (BPAK), this device ensures direct thermal contact with the heatsink, leading to improved thermal performance. It offers optimal performance with low on-state voltage, enhanced thermal performance, and minimal switching losses suitable for both hard and soft switching topologies in automotive applications.
Features
- Extremely Efficient Trench with Field Stop Technology
- BPAK, a New Top-side Cooled Package Designed to Meet High Voltage and Improve Thermal Performance
- Creepage Distance Exceeding 5.6 mm to Align with IEC60664-1 for Voltages Up to 800 V
- Maximum Junction Temperature Tj = 175 °C
- AEC-Q101 Qualified, PPAP Available Upon Request
- Pb-Free, Halogen Free, and RoHS Compliant
Applications
- OBC (On-Board Charger)
Electrical Characteristics Summary
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-to-Emitter Voltage | BVCES | 1200 | V |
| Gate-to-Emitter Voltage | VGE | ±20 | V |
| Collector Current | IC (Tc = 25°C) | 80 | A |
| Collector Current | IC (Tc = 100°C) | 40 | A |
| Power Dissipation | PD (Tc = 25°C) | 1000 | W |
| Pulsed Collector Current | ICM (Tc = 25°C, tp = 10 µs) | 120 | A |
| Diode Forward Current | IF (Tc = 25°C) | 80 | A |
| Thermal Resistance, Junction-to-Case for IGBT | ReJC | 0.15 | °C/W |
| Thermal Resistance, Junction-to-Case for Diode | ReJC | 0.3 | °C/W |
Typical Characteristics
The document includes various graphs illustrating typical characteristics such as:
- Output Characteristics (Figures 1-3, 5) showing the relationship between collector current and collector-emitter voltage at different temperatures and gate-emitter voltages.
- Transfer Characteristics (Figure 4) showing the relationship between collector current and gate-emitter voltage.
- Saturation Voltage vs. Junction Temperature (Figure 6).
- Capacitance Characteristics (Figure 7) showing Cies, Coes, and Cres versus collector-emitter voltage.
- Gate Charge Characteristics (Figure 8) showing VGE versus QG.
- Switching Time vs. Gate Resistance (Figures 9-10) for turn-on delay, rise time, turn-off delay, and fall time.
- Switching Loss vs. Gate Resistance (Figures 11-12) for EON and EOFF.
- Switching Time vs. Collector Current (Figures 13-14) for various parameters.
- Switching Loss vs. Collector Current (Figures 15-16) for EON and EOFF.
- Diode Forward Characteristics (Figure 17) showing IF versus VF.
- Diode Reverse Recovery Current (Figure 18) showing IRRM versus dip/dt.
- Diode Reverse Recovery Time (Figure 19) showing tRR versus dip/dt.
- Transient Thermal Impedance of IGBT (Figure 21) and Diode (Figure 22) showing ZthJC versus pulse duration for various duty cycles.
Package Dimensions
The AFGBP40T120SWD is supplied in the BPAK7 package (Case 763AA), with dimensions detailed in the package drawings. Key dimensions include:
- Package Body: 14.00 x 12.85 x 3.50 mm
- Pitch: 1.27P
- Lead standoff (A1): 0.05 - 0.25 mm
- Body dimensions (D, E): 12.75-12.95 mm (D), 13.90-14.10 mm (E)
- Lead dimensions (b, b2, b3): varying from 0.50 mm to 1.00 mm
- Height (H): 18.05 - 19.05 mm
- Height (H1): 13.80 - 14.20 mm
Refer to the detailed package drawings for precise measurements and notes on tolerances and features.
Revision History
| Revision | Description of Changes | Date |
|---|---|---|
| P1 | Product review for advanced datasheet release. Update Description; Maximum Rating table; Electrical Characteristics such as VCESAT, Capacitance and gate charge; Remove AC SW to TBD; Update figure 18; Add in Package Dimension info. | 5/29/2025 |
| P2 | Product review for Advance datasheet release: Remove fast switching in description; Update IGES max limit with +/- 400 nA and remove typ limit; Update VF limit; Update Switching characteristics limit | 6/4/2025 |
| P3 | Removing figure 9 as per recommended. | 6/11/2025 |
