onsemi FFH75H60S Hyperfast Diode

75 A, 600 V

The FFH75H60S is a hyperfast diode with soft recovery characteristics. It offers a half recovery time of ultrafast diodes and features silicon nitride passivated ionimplanted epitaxial planar construction. These devices are suitable for freewheeling/clamping diodes and diodes in various switching power supplies and power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise, reducing power loss in switching transistors.

Features

Hyperfast Recovery t_rr = 75 ns (@ I_F = 75 A)
Max Forward Voltage, V_F = 1.8 V (@ T_C = 25°C)
600 V Reverse Voltage and High Reliability
Avalanche Energy Rated
This Device is Pb-Free and is RoHS Compliant

Applications

General Purpose
SMPS, Solar Inverter, UPC
Power Switching Circuits
Solar Inverter, UPC

Absolute Maximum Ratings

Parameter	Symbol	Ratings	Unit
Peak Repetitive Reverse Voltage	V_RRM	600	V
Working Peak Reverse Voltage	V_R	600	V
DC Blocking Voltage	V_R	600	V
Average Rectified Forward Current (T_C = 105°C)	I_F(AV)	75	A
Non-repetitive Peak Surge Current 60 Hz Single Half-Sine Wave	I_FSM	750	A
Operating Junction and Storage Temperature	T_J, T_STG	-65 to 175	°C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

Thermal Characteristics

Parameter	Symbol	Min	Max	Unit
Maximum Thermal Resistance, Junction to Case	R_θJC		0.4	°C/W

Package Marking and Ordering Information

Device	Device Marking	Package	Packing Method	Reel Size	Tape Width	Quantity
FFH75H60S	FFH75H60S	TO-247-2LD	Tube	N/A	N/A	30

Electrical Characteristics

Parameter	Conditions	Typ	Max	Unit
V_F (Note 1)	I_F = 75 A, T_C = 25°C	1.8	2.2	V
I_R (Note 1)	I_F = 75 A, T_C = 125°C	1.6	2.0	V
	V_R = 600 V, T_C = 25°C		100	µA
	V_R = 600 V, T_C = 125°C		1.0	mA
t_rr	I_F = 75 A, dl_F/dt = 200 A/µs, V_R = 390 V, T_C = 25°C	40	75	ns
	I_F = 75 A, dl_F/dt = 200 A/µs, V_R = 390 V, T_C = 125°C	23		ns
	I_F = 75 A, dl_F/dt = 200 A/µs, V_R = 390 V, T_C = 125°C	17		ns
Q_rr		80		nC
W_AVL	Avalanche Energy (L = 40 mH)	20		mJ

Notes:

Product parametric performance is indicated in the Electrical Characteristics and/or other sections of the data sheet. Performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Pulse: Test Pulse Width = 300 µs, Duty Cycle = 2%.

Test Circuits and Waveforms

Figure 1. Diode Reverse Recovery Test Circuit & Waveform

t_rr Test Circuit: A circuit diagram shows an IGBT, a resistor (R), a current sense resistor, and the DUT (Device Under Test). The diagram illustrates control of gate voltage (VGE) amplitude and rate of change (dlF/dt) and forward current (IF).

t_rr Waveforms and Definitions: A graph shows current (I) and voltage (V) waveforms over time. Key parameters labeled include I_F, I_RM, t_a, t_b, and t_rr.

Figure 2. Unclamped Inductive Switching Test Circuit & Waveform

Avalanche Energy Test Circuit: A circuit diagram shows a voltage source (VDD), an inductor (L), a resistor (R), and the DUT. The diagram also includes a switch (Q1) and a current sense resistor.

Avalanche Current and Voltage Waveforms: A graph shows current (I) and voltage (V) waveforms over time during an unclamped inductive switching event. Key parameters labeled include I_L, V_AVL, t₁, and t₂.

Typical Performance Characteristics

Figure 3. Typical Forward Voltage Drop vs. Forward Current

A graph shows forward current (I_F) in Amperes on the y-axis versus forward voltage (V_F) in Volts on the x-axis. Curves are plotted for different case temperatures: 25°C, 75°C, and 125°C.

Figure 4. Typical Reverse Current vs. Reverse Voltage

A graph shows reverse current (I_R) in µA on the y-axis versus reverse voltage (V_R) in Volts on the x-axis. Curves are plotted for different case temperatures: 25°C, 75°C, and 125°C.

Figure 5. Typical Junction Capacitance

A graph shows junction capacitance (C_J) in pF on the y-axis versus reverse voltage (V_R) in Volts on the x-axis. The typical capacitance at 0 V is noted as 681 pF. Curves are plotted for different case temperatures: 25°C, 75°C, and 125°C.

Figure 6. Typical Reverse Recovery Time vs. di/dt

A graph shows typical reverse recovery time (t_rr) in ns on the y-axis versus the rate of change of forward current (dl_F/dt) in A/µs on the x-axis. Curves are plotted for I_F = 75 A at different case temperatures: 25°C, 75°C, and 125°C.

Figure 7. Typical Reverse Recovery Current vs. di/dt

A graph shows typical reverse recovery current (I_rr) in A on the y-axis versus the rate of change of forward current (dl_F/dt) in A/µs on the x-axis. Curves are plotted for I_F = 75 A at different case temperatures: 25°C, 75°C, and 125°C.

Figure 8. Forward Current Derating Curve

A graph shows average forward current (I_F(AV)) in Amperes on the y-axis versus case temperature (T_C) in °C on the x-axis. The curve shows how the maximum allowable average forward current decreases as the case temperature increases.

Figure 9. Transient Thermal Response Curve

A graph shows transient thermal response (Z_θJC) in °C/W on the y-axis versus rectangular pulse duration in seconds on the x-axis. Multiple curves represent different duty factors. Notes indicate Z_θJC(t) = 0.4°C/W Max, Duty Factor D = t₁/t₂, and T_JM - T_C = P_DM * Z_θJC(t).

Mechanical Case Outline

TO-247-2LD, CASE 340CL, ISSUE A

A diagram shows the mechanical dimensions of the TO-247-2LD package. The diagram includes labels for various dimensions (A, A1, A2, b, b2, c, D, D1, D2, E, E1, E2, e, L, L1, ØP, P1, Q, S) with corresponding millimeter measurements provided in a table.

Generic Marking Diagram

A diagram illustrates the typical marking on the device, including placeholders for specific device code, assembly location, year, work week, and lot code. It also notes the potential presence of a Pb-Free indicator.

Document Number: 98AON13850G

Description: TO-247-2LD

Date: 03 DEC 2019

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