onsemi Ignition Gate Drive IC

FAD1100-F085

Product Preview

Overview

The FAD1100-F085 is designed to directly drive an ignition IGBT and control the current and spark event of the coil. The coil current is controlled via the input pin. When the input is driven high, the output of the FAD1100-F085 is enabled to turn on the IGBT and start charging the coil. The FAD1100-F085 will sink a current (IIN) into the input pin based on programmed current on the RA line.

An input spike filter suppresses input signals of less than 13 µs in duration. A Max Dwell timer is included in the FAD1100-F085 which will turn off the IGBT if the input stays active for longer than the programmed time. This time interval can be modified through an external capacitor on the CSSD pin. When the Max Dwell timer is exceeded, the FAD1100-F085 will enter a Soft-Shut-Down mode (SSD) slowly dropping the collector current by lowering the gate drive to the IGBT, thereby discharging the coil such as to inhibit a spark event. Once the soft shutdown operation has started, any transitions on the input signal are ignored until after completion of the soft shutdown function. The FAD1100-F085 will also limit the collector current of the IGBT to Ic(lim) during charging. This is done through the sense resistor in the emitter leg of the Ignition IGBT developing a signal input to the VSENSE pin of the FAD1100-F085.

Features

5 V Output Level Optimized to Drive Ignition IGBTs
Programmable Input Current through RA Line with 13 µs Input Spike Filter
IGBT Current Sense and Current Limit
Configurable Maximum Dwell Time with Soft Shut Down Protection
Operation from Ignition on Battery Line down to 6 V
28 V Battery Capable for Jump Start
Over Voltage Protection
Ground Shift Tolerance ±1.5 V
SO8 Package or Die Sales
AEC-Q100 Grade 0 Qualified
This Device is Pb-Free and is RoHS Compliant

Typical Applications

12 V Automotive Ignition Systems

Marking Diagram

The marking diagram shows the FAD1100 device with specific codes for Assembly Lot Code, Year, Work Week, and Pb-Free Package status.

Pin Connections

The FAD1100-F085 has 8 pins with the following functions:

Pin 1: GND (Ground Reference of the Control IC)
Pin 2: Input (Signal input)
Pin 3: NC (No Connection)
Pin 4: CSSD (Maximum dwell time and Soft-Shut-Down current output)
Pin 5: RA (Input reference current output)
Pin 6: Output (Gate Drive to the IGBT)
Pin 7: VSENSE (Sense Input used for Ilim function)
Pin 8: VBAT (Supply voltage)

Simplified Block Diagram

The simplified block diagram illustrates the internal components of the FAD1100, including a clamp, Vreg, bias Vref, input buffer, spike filter/delay, output driver, current limiter, and GND connection.

Recommended External Components

The following external components are recommended for optimal performance:

Component	Description	Vendor	Parameter	Typ.	Unit
R_BAT	Limits transient currents during load dump	Vishay (0603 or bigger)	R	200 to 300	Ω
C_BAT1	Battery or Ignition voltage filtering	TDK (dielectric material X7R)	C	0.47	μF
C_BAT	Battery noise transients	TDK (dielectric material X7R)	C	10	nF
C_IN	Noise immunity	TDK (dielectric material X7R)	C	10 to 1000	pF
R_SENSE	Sense the collector current	Bourns (1206 or bigger)	R	20	mΩ
R_B	Input resistor	Vishay 0603	R	10-200	Ω
R_IN	Input resistor	Vishay 0603	R	>100 kΩ, or disconnected	kΩ

Typical Application Schematic

Figure 1 shows a typical application schematic for the FAD1100, illustrating the connections between the ECU, FAD1100, and the ignition coil, including external components like resistors and capacitors.

Absolute Maximum Ratings

The following table lists the absolute maximum ratings for the FAD1100-F085. Exceeding these limits may damage the device.

Symbol	Parameter	Min.	Max.	Unit
V_BAT	Voltage at V_BAT pin (excl. EMC transients)	-0.3	28	V
V_IN	Voltage at Input pin with external R_IN	-2	16	V
V_RA, V_CSSD	Voltage at RA and at CSSD	-0.3	3.6	V
V_OUTPUT	Voltage at Gate Output	-0.3	6.5	V
V_SENSE	Voltage on V_SENSE pin	0	400	mV
T_A	Maximum Ambient Operating Temperature	-40	150	°C
T_STG	Storage Temperature Range	-55	150	°C
P_MAX	Maximum continuous power dissipation at T_A = 25 °C	0	0.625	W
R_ΘJA	Thermal Resistance Junction-to-Ambient (Note 1)		200	°C /W
ESD_HBM	Electrostatic Discharge Voltage Capability (Human Body Model) (Note 2)		2	kV
T_SLD	Lead Temperature Soldering (Note 3)		260	°C

Notes:

1. Refer to JESD51-2 and JESD51-3 standards.
2. Tested by EIA/JESD22-A114.
3. Refer to onsemi's Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

Recommended Operating Conditions

The following table lists the recommended operating conditions for the FAD1100-F085.

Symbol	Characteristic	Typ.	Units
I_CQ	Collector (Coil) Operating Current	12	A
L_P	Coil Primary Inductance	1.5	mH
R_P	Coil Primary Resistance (25°C)	0.4	Ω
R_LOAD	Load Resistance (for delay time measurements)	2	Ω

Electrical Characteristics

The following tables detail the electrical characteristics of the FAD1100-F085 under various conditions.

Power Supply Conditions

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
V_BAT1	Operating voltage	Coil switching function only	4		28	V
V_BAT2	Operating voltage	All functions	6		28	V
I_BAT	Supply current	T_J = 150 °C, V_BAT = 28 V, RA open, Input = 5 V		5		mA
V_CLAMP	Battery clamp voltage	I_BAT = 10 mA	33		40	V

Sense Pin Conditions

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
V_LIMIT	Sense Voltage threshold at current limit	V_BAT > 8 V	185		215	mV
		6 V < V_BAT < 8V	170			mV
I_SENSE	Current sourced out of V_SENSE Pin			50	70	μA

Input Spike Filter

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
T_SPIKE	Input spike filter	Delay on rising and falling edge of Input		13		μs

Input Control Conditions

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
V_INL	Input low voltage		1.2	1.5	V
V_INH	Input high voltage		1.8	2.0	V
V_IN_Hys	Input voltage hysteresis			0.3		V
I_IN	Input current (see Figure 6)	R_A = 200 kΩ		0.5		mA
		R_A = 5.2 kΩ		15		mA

Gate Output Voltage Max

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
V_OUTPUT(MAX)	Max Gate Output Voltage	16 kΩ pulldown resistor	4.5	5.25	6	V
V_OUTPUT(LOW)	Min Gate Output Voltage	(0 mA < I_GATE < 0.4 mA at T_A = 25 °C)	0.0		0.4	V

Diagnostic Functions and Protection

Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
R_A	Resistor for input reference current (Figure 6)		5.2	200	kΩ
C_CSSDMIN	Minimum dwell time capacitor		2.3		nF
T_DMAX	Maximum dwell time	(C_SSD = 20 nF)	30		60	ms
I_SLEW	Soft-Shut-Down slew rate	(I_C: 80-20% I_CLIM)	0.7		1.5	A/ms
I_CSSD1	CSSD Pin current for T_DMAX		0.75	1.0	1.25	μA

Typical Performance Characteristics

Input and Spike Filter

When the input signal voltage reaches V_INH, the IGBT will be switched on, charging the coil. When the input voltage goes below V_INL, the coil current through the IGBT will be turned off. If the FAD1100-F085 is in SSD (Soft Shut Down) mode, the input signal control is disabled. After an SSD sequence, input control will be re-enabled after the input has reached a valid low. Positive and negative spikes of less than T_SPIKE duration at the input line will be filtered out and will not turn on/off the IGBT.

Maximum Dwell Time and Soft-Shutdown (SSD)

When the IGBT is turned on, a delay timer, dependent on the value of the external CSSD capacitor, is started. If a valid falling edge has not been received after the time T_DMAX, the IGBT will be turned off slowly. The coil current will not exceed a slew rate of typical 1.5 A/ms. If a valid falling edge is received after the time T_DMAX, the edge will be ignored and the soft shutdown will be completed. The IGBT cannot be subsequently turned on until a valid rising edge is detected.

If the CSSD pin is shorted to ground, the maximum dwell time and SSD functions will be disabled. For CSSD capacitor smaller than 2.3 nF, the maximum dwell time and SSD functions might be disabled and cannot be guaranteed. For CSSD capacitor above 2.3 nF, the maximum dwell time is active.

Figure 4 illustrates the Dwell Time and Soft-Shut-Down behavior, showing VIN, IClim, Ic, Tdmax, Islew, and the SSD Phase over time.

Relationship between CSSD Capacitor and Max Dwell Time

Figure 5 shows the relationship between the CSSD capacitor and the maximum dwell time (T_DMAX). As the capacitance increases, the maximum dwell time also increases linearly.

Relationship between Signal Input Current and RA Resistance

Figure 6 shows the relationship between the signal input current and the RA resistance. The input current is inversely proportional to the RA resistance.

Package Dimensions

The FAD1100-F085 is available in an SOIC8 package (CASE 751EB, ISSUE A). The dimensions and land pattern recommendation are provided in detail, including notes on conformance to JEDEC standards and dimension units.

Revision History

Revision	Description of Changes	Date
PO	Initial document version release.	7/15/2025

Additional Information

For technical publications, visit the Technical Library at www.onsemi.com/design/resources/technical-documentation. For general information about onsemi, visit www.onsemi.com. For online support, visit www.onsemi.com/support or contact your local Sales Representative.

Google Docs
Google Drive
Download [pdf]

File Info : application/pdf, 10 Pages, 193.36KB

fad1100-f085-d Acrobat Distiller 25.0 (Windows)

Related Documents

	onsemi AFGBP40T120SWD IGBT Datasheet - Power, Co-PAK N-Channel, Field Stop VII Datasheet for the onsemi AFGBP40T120SWD, a 1200 V, 1.4 V, 40 A N-Channel IGBT in a BPAK package. Features Field Stop VII technology, top-side cooling, and AEC-Q101 qualification for automotive applications.
	onsemi FDMS2D5N08C: 80V N-Channel Shielded Gate MOSFET Datasheet Datasheet for the onsemi FDMS2D5N08C, an 80V N-Channel Shielded Gate PowerTrench MOSFET. Features low on-state resistance, superior switching performance, and detailed electrical and thermal characteristics for power applications.
	onsemi MC10EP01/MC100EP01 3.3V/5V ECL 4-Input OR/NOR Gate Datasheet Datasheet for the onsemi MC10EP01 and MC100EP01, 3.3V/5V ECL 4-Input OR/NOR gates. Features include 230 ps typical propagation delay, maximum frequency > 3 GHz, and PECL/NECL mode operation. Details on pin descriptions, truth tables, attributes, maximum ratings, DC characteristics, and AC characteristics are provided.
	onsemi MC74VHC1G32/MC74VHC1GT32 Single 2-Input OR Gate Datasheet Datasheet for onsemi's MC74VHC1G32 and MC74VHC1GT32, which are single 2-input OR gates in tiny footprint packages. Features include operation from 2.0V to 5.5V, CMOS-level input thresholds, and protection against over-voltage conditions.
	onsemi NC7SZ32 TinyLogic UHS Two-Input OR Gate Datasheet Datasheet for the onsemi NC7SZ32, a TinyLogic UHS Two-Input OR Gate. Features ultra-high speed, high output drive, and a broad operating voltage range (1.65V to 5.5V). Includes electrical characteristics, package dimensions, and ordering information.
	onsemi Advanced Driver Assistance Systems (ADAS) Solution Guide This guide from onsemi details Advanced Driver Assistance Systems (ADAS) solutions, focusing on automotive sensing technologies including image sensors (Hyperlux™ AR0823AT, AR0820AT, AR0341AT) and LiDAR components (ArrayRDM-0112A20) to enhance vehicle safety and performance.
	74LCX08 Low Voltage Quad 2-Input AND Gate with 5V Tolerant Inputs Datasheet Datasheet for the 74LCX08, a low voltage quad 2-input AND gate from onsemi. Features 5V tolerant inputs, high speed operation, and low power dissipation. Includes electrical characteristics, AC loading and waveforms, and package dimensions.
	onsemi NC7WZ16 TinyLogic UHS Dual Buffer Datasheet Datasheet for the onsemi NC7WZ16, a TinyLogic UHS Dual Buffer. This device features ultra-high speed, high output drive, and a broad Vcc operating range from 1.65 V to 5.5 V. It is fabricated with advanced CMOS technology and offers features like power-down high-impedance inputs/outputs and over-voltage tolerance.