DMTH4M40SPGW
Diodes Incorporated
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Package: PowerDI8080-5
Product Summary
| Characteristic | Value | Unit |
|---|---|---|
| BVDSS | 40 | V |
| RDS(ON) Max | 0.4 | mΩ @ VGS = 10V |
| ID | 680 | A @ TC = +25°C |
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
- Engine management systems
- Body control electronics
- DC-DC converters
Features and Benefits
- Rated to +175°C – Ideal for High Ambient Temperature Environments
- 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
- High Conversion Efficiency
- Low RDS(ON) – Minimizes Power Losses
- Wettable Flank for Improved Optical Inspection
- Fast Switching Speed
- Low Input Capacitance
- Lead-Free Finish; RoHS Compliant
- Halogen and Antimony Free. "Green" Device
- An automotive-compliant part is available under a separate datasheet (DMTH4M40SPGWQ)
Mechanical Data
- Package: PowerDI8080-5
- Package Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0.
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208.
- Weight: 0.36 grams (Approximate)
Ordering Information
| Orderable Part Number | Package | Qty. | Carrier |
|---|---|---|---|
| DMTH4M40SPGW-13 | PowerDI8080-5 | 2000 | Tape & Reel |
Notes:
- 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
- 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free.
- 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
- 4. For packaging details, go to https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
The device marking includes the manufacturer's logo (Diodes Incorporated), the product type marking code "TH4M40SGW", and the date code "YYWW" where YY represents the year (e.g., 25 for 2025) and WW represents the week of manufacture (01 to 53).
Pin Configuration: The package has three pins labeled G (Gate), S (Source), and D (Drain).
Maximum Ratings
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 40 | V | |
| Gate-Source Voltage | VGSS | ±20 | V | |
| Continuous Drain Current (Note 6) | ID | 680 | A | TC = +25°C |
| 481 | TC = +100°C | |||
| Maximum Continuous Body Diode Forward Current (Note 6) | IS | 680 | A | |
| Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) | IDM | 3000 | A | |
| Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%) | ISM | 3000 | A | |
| Avalanche Current, L = 1mH | IAS | 67 | A | |
| Avalanche Energy, L = 1mH | EAS | 2244.5 | mJ |
Thermal Characteristics
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Total Power Dissipation (Note 5) | PD | 4.6 | W | TA = +25°C |
| Thermal Resistance, Junction to Ambient (Note 5) | ROJA | 32.9 | °C/W | |
| Total Power Dissipation (Note 6) | PD | 319.1 | W | TC = +25°C |
| Thermal Resistance, Junction to Case (Note 6) | ReJc | 0.47 | °C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +175 | °C |
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS (Note 7) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | 40 | - | - | V | VGS = 0, ID = 1mA |
| Zero Gate Voltage Drain Current | IDSS | - | - | 1 | μA | VDS = 32V, VGS = 0 |
| Gate-Source Leakage | IGSS | - | ±100 | - | nA | VGS = ±20V, VDS = 0 |
| ON CHARACTERISTICS (Note 7) | ||||||
| Gate Threshold Voltage | VGS(TH) | 2 | - | 4 | V | VDS = VGS, ID = 250μA |
| Static Drain-Source On-Resistance | RDS(ON) | - | 0.3 | 0.4 | mΩ | VGS = 10V, ID = 25A |
| Diode Forward Voltage | VSD | - | 0.73 | 1.2 | V | VGS = 0, IS = 25A |
| DYNAMIC CHARACTERISTICS (Note 8) | ||||||
| Input Capacitance | Ciss | - | 18011 | - | pF | VDS = 20V, VGS = 0, f = 1MHz |
| Output Capacitance | Coss | - | 10117 | - | pF | VDS = 20V, VGS = 0, f = 1MHz |
| Reverse Transfer Capacitance | Crss | - | 376 | - | pF | VDS = 0, VGS = 0, f = 1MHz |
| Gate Resistance | Rg | - | 0.93 | - | Ω | |
| Total Gate Charge | Qg | - | 229 | - | nC | VDD = 20V, ID = 25A, VGS = 10V |
| Gate-Source Charge | Qgs | - | 79.9 | - | nC | |
| Gate-Drain Charge | Qgd | - | 23.2 | - | nC | |
| Turn-On Delay Time | tD(ON) | - | 34.2 | - | ns | VDD = 20V, VGS = 10V, ID = 25A, RG = 3Ω |
| Turn-On Rise Time | tR | - | 35.4 | - | ns | |
| Turn-Off Delay Time | tD(OFF) | - | 86.2 | - | ns | |
| Turn-Off Fall Time | tF | - | 37.1 | - | ns | |
| Body Diode Reverse-Recovery Time | tRR | - | 119.5 | - | ns | IF = 25A, di/dt = 100A/μs |
| Body Diode Reverse-Recovery Charge | QRR | - | 364 | - | nC | |
Notes:
- 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
- 6. Thermal resistance from junction to soldering point (on the exposed drain pad).
- 7. Short duration pulse test used to minimize self-heating effect.
- 8. Guaranteed by design. Not subject to product testing.
Graphical Data
Figure 1: Typical Output Characteristic
Plots Drain Current (ID) in Amperes versus Drain-Source Voltage (VDS) in Volts for various Gate-Source Voltages (VGS) from 3.5V to 10.0V.
Figure 2: Typical Transfer Characteristic
Plots Drain Current (ID) in Amperes versus Gate-Source Voltage (VGS) in Volts for various Drain-Source Voltages (VDS) from 5V.
Figure 3: Typical On-Resistance vs. Drain Current and Gate Voltage
Plots RDS(ON) in mΩ versus Drain Current (ID) in Amperes for VGS = 10V.
Figure 4: Typical Transfer Characteristic
Plots RDS(ON) in Ω versus Gate-Source Voltage (VGS) in Volts for ID = 25A.
Figure 5: Typical On-Resistance vs. Drain Current and Junction Temperature
Plots RDS(ON) in Ω versus Drain Current (ID) in Amperes for various Junction Temperatures (TJ) from -55°C to +175°C.
Figure 6: On-Resistance Variation with Temperature
Plots Normalized RDS(ON) versus Junction Temperature (TJ) in °C for VGS = 10V, ID = 25A.
Figure 7: On-Resistance Variation with Temperature
Plots RDS(ON) in Ω versus Junction Temperature (TJ) in °C for VGS = 10V, ID = 25A.
Figure 8: Gate Threshold Variation vs. Junction Temperature
Plots Gate Threshold Voltage (VGS(TH)) in Volts versus Junction Temperature (TJ) in °C for ID = 1mA and ID = 250μA.
Figure 9: Diode Forward Voltage vs. Current
Plots Source-Drain Voltage (VSD) in Volts versus Source Current (IS) in Amperes for various Junction Temperatures (TJ).
Figure 10: Typical Junction Capacitance
Plots Junction Capacitance (Ciss, Coss, Crss) in pF versus Drain-Source Voltage (VDS) in Volts at f = 1MHz.
Figure 11: Gate Charge
Plots Gate-Source Voltage (VGS) in Volts versus Total Gate Charge (Qg) in nC for VDS = 20V, ID = 25A, VGS = 10V.
Figure 12: SOA, Safe Operation Area
Plots Drain Current (ID) in Amperes versus Drain-Source Voltage (VDS) in Volts, showing safe operating limits for various pulse durations and duty cycles.
Figure 13: Transient Thermal Resistance
Plots Transient Thermal Resistance (r(t)) in °C/W versus Pulse Duration Time (t1) in seconds for various Duty Cycles (D).
Package Outline Dimensions
Detailed dimensions for the PowerDI8080-5 package are provided below. All dimensions are in millimeters (mm).
| Dim | Min | Max | Typ |
|---|---|---|---|
| A | 1.50 | 1.70 | - |
| A1 | 0.00 | 0.15 | - |
| A3 | - | - | 0.25 |
| b | 0.90 | 1.10 | - |
| b2 | 7.10 | 7.30 | - |
| c | 0.18 | 0.24 | - |
| c2 | 0.47 | 0.57 | - |
| D | 6.10 | 6.30 | - |
| D1 | 4.90 | 5.10 | - |
| E | 7.90 | 8.10 | - |
| E1 | 6.70 | 6.90 | - |
| e | - | - | 2.00 |
| H | 7.80 | 8.10 | - |
| L | 0.60 | 0.80 | - |
| L2 | 0.90 | 1.30 | - |
Refer to https://www.diodes.com/package-outlines.html for the latest version.
Suggested Pad Layout
Recommended PCB pad layout dimensions for the PowerDI8080-5 package are provided below. All dimensions are in millimeters (mm).
| Dimensions | Value (in mm) |
|---|---|
| C | 2.00 |
| G | 1.90 |
| X | 1.20 |
| X1 | 6.80 |
| X2 | 8.60 |
| Y | 1.40 |
| Y1 | 3.74 |
| Y2 | 1.76 |
Refer to https://www.diodes.com/package-outlines.html for the latest version.
Important Notice
Diodes Incorporated (Diodes) and its subsidiaries provide information for illustrative purposes only. Diodes assumes no liability for the application or use of this document or any product described herein. Customers are responsible for evaluating product suitability, ensuring compliance with applicable legal and regulatory requirements, and implementing appropriate safeguards in their applications. Diodes disclaims all warranties, express or implied, including merchantability and fitness for a particular purpose. Product information is subject to Diodes' Standard Terms and Conditions of Sale. Diodes reserves the right to make changes to this document and products without notice. The English version of this document is the definitive and final release.
