Diodes Incorporated DMN65D0L
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Manufacturer: Diodes Incorporated
Part Number: DMN65D0L
Product Summary
| Characteristic | Value | Unit |
|---|---|---|
| BVDSS | 60 | V |
| RDS(ON) Max (VGS = 10V) | 5 | Ω |
| RDS(ON) Max (VGS = 5V) | 7.5 | Ω |
| ID Max (TA = +25°C) | 238 | mA |
| ID Max (TA = +70°C) | 200 | mA |
Description and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
- Motor control
- Power-management functions
Features and Benefits
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Small Surface-Mount Package
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. "Green" Device (Note 3)
- For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotive-products/.
- This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
Mechanical Data
- Package: SOT23
- Package Material: Molded Plastic, "Green" Molding Compound.
- UL Flammability Classification Rating: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish - Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208 e3
- Terminal Connections: See Diagram
- Weight: 0.009 grams (Approximate)
Shows the physical layout of the SOT23 package from the top.
Diagram: Equivalent CircuitRepresents the MOSFET as a switch with terminals labeled D (Drain), G (Gate), and S (Source).
Diagram: SOT23 Package Top View (with pin labels)Shows the SOT23 package from the top with terminals labeled D (Drain), G (Gate), and S (Source).
Ordering Information
| Orderable Part Number | Package | Qty. | Packing | Carrier |
|---|---|---|---|---|
| DMN65D0L-7 | SOT23 | 3,000 | Tape & Reel | |
| DMN65D0L-13 | SOT23 | 10,000 | Tape & Reel |
Notes:
- No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
- See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free.
- Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
- For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Product Type Marking Code: 5D0
Date Code Marking: YM
Where Y or Y = Year (e.g., M = 2025) and M = Month (e.g., 9 = September).
Date Code Key
| Year | 2025 | 2026 | 2027 | 2028 | 2029 | 2030 | 2031 | 2032 | 2033 | 2034 | 2035 | 2036 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Code | M | N | P | R | S | T | U | V | W | X | Y | Z |
| Month | Jan | Feb | Mar | Apr | May | Jun | Jul | Aug | Sep | Oct | Nov | Dec |
| Code | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | O | N | D |
Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V |
| Gate-Source Voltage | VGSS | ±20 | V |
| Continuous Drain Current (Note 5) VGS = 10V | ID | 238 (Steady State, TA = +25°C) | mA |
| 190 (Steady State, TA = +70°C) | mA | ||
| Maximum Continuous Body Diode Forward Current (Note 5) | IS | 238 | A |
| Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 5) | IDM | 1 | A |
Thermal Characteristics
(@ TA = +25°C, unless otherwise specified.)
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Total Power Dissipation (Note 5) | PD | 0.6 | mW |
| Thermal Resistance, Junction to Ambient (Note 5) | ROJA | 216 | °C/W |
| Total Power Dissipation (Note 6) | PD | 0.5 | mW |
| Thermal Resistance, Junction to Ambient (Note 6) | ROJA | 276 | °C/W |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C |
Notes:
- 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
- 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
Electrical Characteristics
(@ TA = +25°C, unless otherwise specified.)
OFF CHARACTERISTICS (Note 7)
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | — | — | V | VGS = 0, ID = 250µA |
| Zero Gate Voltage Drain Current | IDSS | — | 1.0 | — | µA | VDS = 60V, VGS = 0 |
| Gate-Body Leakage | IGSS | — | ±100 | — | nA | VGS = ±20V, VDS = 0 |
ON CHARACTERISTICS (Note 7)
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | 1.0 | — | 2.5 | V | VDS = VGS, ID = 250µA |
| Static Drain-Source On-Resistance | RDS(ON) | 1.18 | 1.22 | 7.5 | Ω | VGS = 5.0V, ID = 0.05A |
| — | 1.18 | 5.0 | Ω | VGS = 10V, ID = 0.5A | ||
| Diode Forward Voltage | VSD | 0.8 | — | 1.5 | V | VGS = 0, Is = 115mA |
DYNAMIC CHARACTERISTICS (Note 8)
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Input Capacitance | Ciss | — | 49 | — | pF | VDS = 25V, VGS = 0, f = 1.0MHz |
| Output Capacitance | Coss | — | 5.4 | — | pF | f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | — | 4.6 | — | pF | VDS = 0, VGS = 0, f = 1.0MHz |
| Gate Resistance | Rg | — | 136 | — | Ω | f = 1.0MHz |
| Total Gate Charge (VGS = 4.5V) | Qg | — | 0.3 | — | pC | VDS = 10V, ID = 250mA |
| Total Gate Charge (VGS = 10V) | Qg | — | 0.6 | — | pC | |
| Gate-Source Charge | Qgs | — | 0.1 | — | pC | |
| Gate-Drain Charge | Qgd | — | 0.1 | — | pC | |
| Turn-On Delay Time | tD(on) | — | 4.1 | — | ns | VDD = 30V, ID = 0.2A, RL = 150Ω, VGEN = 10V, RGEN = 25Ω |
| Turn-On Rise Time | tR | — | 10 | — | ns | |
| Turn-Off Delay Time | tD(off) | — | 27 | — | ns | |
| Turn-Off Fall Time | tF | — | 19 | — | ns | |
| Reverse-Recovery Time | tRR | — | 19.7 | — | ns | IF = 1A, di/dt = 100A/µs |
| Reverse-Recovery Charge | QRR | — | 8.1 | — | nC |
Notes:
- 7. Short duration pulse test used to minimize self-heating effect.
- 8. Guaranteed by design. Not subject to product testing.
Typical Performance Characteristics
This graph shows the relationship between Drain Current (ID) and Drain-Source Voltage (VDS) for various Gate-Source Voltages (VGS) at a constant temperature.
This graph illustrates the Drain Current (ID) versus Gate-Source Voltage (VGS) for different Junction Temperatures (TJ) at a constant Drain-Source Voltage (VDS).
This plot shows the On-Resistance (RDS(ON)) as a function of Drain Current (ID) for specific Gate-Source Voltages (VGS).
This graph displays the On-Resistance (RDS(ON)) versus Gate-Source Voltage (VGS) for two different Drain Currents (ID = 50mA and ID = 500mA).
This chart illustrates the On-Resistance (RDS(ON)) as a function of Drain Current (ID) across various Junction Temperatures (TJ).
This graph shows the normalized On-Resistance (RDS(ON)) variation with Junction Temperature (TJ) for specific VGS and ID conditions.
This plot presents the On-Resistance (RDS(ON)) as a function of Junction Temperature (TJ) for two sets of VGS and ID values.
This graph illustrates how the Gate Threshold Voltage (VGS(TH)) changes with Junction Temperature (TJ) for different Drain Currents (ID).
This plot shows the Source-Drain Voltage (VSD) as a function of Source Current (IS) for various Junction Temperatures (TJ).
This graph displays the Input Capacitance (Ciss), Output Capacitance (Coss), and Reverse Transfer Capacitance (Crss) as a function of Drain-Source Voltage (VDS) at 1MHz.
This plot shows the relationship between Gate-Source Voltage (VGS) and Total Gate Charge (Qg) for a specific test condition.
This graph defines the Safe Operating Area (SOA) for the MOSFET, showing the limits of Drain-Source Voltage (VDS) versus Drain Current (ID) for various pulse durations and duty cycles.
This graph illustrates the Transient Thermal Resistance (r(t)) as a function of Pulse Duration Time (t1) for different duty cycles (D).
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
| Dim | Min | Max | Typ | Unit |
|---|---|---|---|---|
| A | 0.37 | 0.51 | 0.40 | mm |
| B | 1.20 | 1.40 | 1.30 | mm |
| C | 2.30 | 2.50 | 2.40 | mm |
| D | 0.89 | 1.03 | 0.915 | mm |
| F | 0.45 | 0.60 | 0.535 | mm |
| G | 1.78 | 2.05 | 1.83 | mm |
| H | 2.80 | 3.00 | 2.90 | mm |
| J | 0.013 | 0.10 | 0.05 | mm |
| K | 0.890 | 1.00 | 0.975 | mm |
| K1 | 0.903 | 1.10 | 1.025 | mm |
| L | 0.45 | 0.61 | 0.55 | mm |
| L1 | 0.25 | 0.55 | 0.40 | mm |
| M | 0.085 | 0.150 | 0.110 | mm |
| a | 0° | 8° | — |
Illustrates the SOT23 package with various dimensions labeled (A through M, a, L1). Includes a gauge plane indicator.
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
| Dimensions | Value (in mm) |
|---|---|
| C | 2.0 |
| X | 0.8 |
| X1 | 1.35 |
| Y | 0.9 |
| Y1 | 2.9 |
Shows the recommended PCB pad layout for the SOT23 package, with dimensions labeled X, X1, Y, Y1, and C.
Important Notice
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