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DMTH8001STLW: High-Performance MOSFET

Overview

The Diodes Incorporated DMTH8001STLW is an 80V, 175°C N-Channel Enhancement Mode MOSFET designed for superior switching performance and minimized on-state resistance (RDS(ON)). This component is engineered for demanding applications requiring high efficiency and reliability.

Key Features

Applications

This MOSFET is ideal for various power management solutions, including:

Technical Specifications

Key electrical characteristics include a Drain-Source Voltage (BVDSS) of 80V and a maximum RDS(ON) of 1.7mΩ at VGS = 10V. The device is housed in the compact POWERDI®1012-8 (TOLL) package.

For detailed specifications, electrical characteristics, and performance graphs, please refer to the full datasheet available on the Diodes Incorporated website.

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