Product Summary
| BVDSS | 40V | RDS(ON) Max | 2.7mΩ @ VGS = 10V | ID Max | 154.7A @ Tc = +25°C |
|---|
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
- High-frequency switching
- Synchronous rectification
- DC-DC converters
Features and Benefits
- Rated to +175°C – Ideal for High Ambient Temperature Environments
- 100% Unclamped Inductive Switching (UIS) Test in Production Ensures More Reliable and Robust End Application
- High Conversion Efficiency
- Low RDS(ON) - Minimizes Power Losses
- Wettable Flank for Improved Optical Inspection
- Fast Switching Speed
- Low Input Capacitance
- Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. "Green" Device (Note 3)
- For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact Diodes or your local Diodes representative. https://www.diodes.com/quality/product-definitions/
Mechanical Data
- Package: PowerDI®5060-8
- Package Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections: See Diagram Below
- Terminal Finish: Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
- Weight: 0.097 grams (Approximate)
Diagram showing the top view, bottom view, internal schematic, and pin configuration of the PowerDI5060-8/SWP (Type UX) package.
Ordering Information (Note 4)
| Orderable Part Number | Package | Qty. | Packing |
|---|---|---|---|
| DMTH42M5SPSW-13 | PowerDI5060-8/SWP (Type UX) | 2500 | Tape & Reel |
Notes:
- EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
- See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free.
- Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
- For packaging details, go to Diodes' website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
PowerDI is a registered trademark of Diodes Incorporated in the United States and other countries.
Marking Information
Diagram showing the top view of the PowerDI5060-8 package with pin labels. It also shows the marking information: 'DMTH42M5SPSW' (Product Type Marking Code), 'YYWW' (Date Code Marking where YY is Year Code and WW is Week Code).
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 40 | V |
| Gate-Source Voltage | VGSS | ±20 | V |
| Continuous Drain Current, VGS = 10V (Note 5) | ID | 154.7 (Tc = +25°C) 109 (Tc = +100°C) |
A |
| Maximum Continuous Body Diode Forward Current (Note 5) | IS | 154.7 | A |
| Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) | IDM | 619 | A |
| Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%) | ISM | 619 | A |
| Avalanche Current, L = 1mH | IAS | 20.8 | A |
| Avalanche Energy, L = 1mH | EAS | 216.3 | mJ |
Thermal Characteristics
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Total Power Dissipation (Note 6) | PD | 4 (TA = +25°C) | W |
| Thermal Resistance, Junction to Ambient (Note 6) | ROJA | 38 (Steady State) | °C/W |
| Total Power Dissipation (Note 5) | PD | 107 (TC = +25°C) | W |
| Thermal Resistance, Junction to Case (Note 5) | ReJC | 1.4 | °C/W |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +175 | °C |
Notes:
- 5. Thermal resistance from junction to soldering point (on the exposed drain pad).
- 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS (Note 7) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | 40 | -- | -- | V | VGS = 0, ID = 250μA |
| Zero Gate Voltage Drain Current | IDSS | -- | 1 | μA | VDS = 32V, VGS = 0 | |
| Gate-Source Leakage | IGSS | -- | ±100 | nA | VGS = ±20V, VDS = 0 | |
| ON CHARACTERISTICS (Note 7) | ||||||
| Gate Threshold Voltage | VGS(TH) | 2 | -- | 4 | V | VDS = VGS, ID = 250µA |
| Static Drain-Source On-Resistance | RDS(ON) | -- | 2 | 2.7 | mΩ | VGS = 10V, ID = 25A |
| Diode Forward Voltage | VSD | -- | 0.8 | 1.2 | V | VGS = 0, IS = 25A |
| DYNAMIC CHARACTERISTICS (Note 8) | ||||||
| Input Capacitance | Ciss | -- | 2449 | -- | pF | VDS = 20V, VGS = 0, f = 1MHz |
| Output Capacitance | Coss | -- | 1239 | -- | pF | VDS = 20V, VGS = 0, f = 1MHz |
| Reverse Transfer Capacitance | Crss | -- | 38 | -- | pF | VDS = 20V, VGS = 0, f = 1MHz |
| Gate Resistance | Rg | -- | 1.6 | -- | Ω | VDS = 0, VGS = 0, f = 1MHz |
| Total Gate Charge | Qg | -- | 29.3 | -- | nC | VDS = 20V, ID = 25A, VGS = 10V |
| Gate-Source Charge | Qgs | -- | 10.7 | -- | nC | VDS = 20V, ID = 25A, VGS = 10V |
| Gate-Drain Charge | Qgd | -- | 2.7 | -- | nC | VDS = 20V, ID = 25A, VGS = 10V |
| Turn-On Delay Time | tD(ON) | -- | 8.7 | -- | ns | VGS = 10V, VDD = 20V, Rg = 3Ω, ID = 25A |
| Turn-On Rise Time | tR | -- | 18.8 | -- | ns | VGS = 10V, VDD = 20V, Rg = 3Ω, ID = 25A |
| Turn-Off Delay Time | tD(OFF) | -- | 21.5 | -- | ns | VGS = 10V, VDD = 20V, Rg = 3Ω, ID = 25A |
| Turn-Off Fall Time | tF | -- | 9.9 | -- | ns | VGS = 10V, VDD = 20V, Rg = 3Ω, ID = 25A |
| Body Diode Reverse-Recovery Time | tRR | -- | 74.8 | -- | ns | IF = 25A, di/dt = 100A/μs |
| Body Diode Reverse-Recovery Charge | QRR | -- | 95.9 | -- | nC | IF = 25A, di/dt = 100A/μs |
Notes:
- 7. Short duration pulse test used to minimize self-heating effect.
- 8. Guaranteed by design. Not subject to product testing.
Performance Graphs
Figure 1: Typical Output Characteristic showing Drain Current (ID) versus Drain-Source Voltage (VDS) for various Gate-Source Voltages (VGS).
Figure 2: Typical Transfer Characteristic showing Drain Current (ID) versus Gate-Source Voltage (VGS) for VDS = 5V at various Junction Temperatures (TJ).
Figure 3: Typical On-Resistance vs. Drain Current and Gate Voltage, showing RDS(ON) versus Drain Current (ID) for VGS = 10V.
Figure 4: Typical Transfer Characteristic showing RDS(ON) versus Gate-Source Voltage (VGS) for ID = 25A.
Figure 5: Typical On-Resistance vs. Drain Current and Junction Temperature, showing RDS(ON) versus Drain Current (ID) for VGS = 10V at various Junction Temperatures (TJ).
Figure 6: On-Resistance Variation with Temperature, showing Normalized RDS(ON) versus Junction Temperature (TJ) for VGS = 10V, ID = 25A.
Figure 7: On-Resistance Variation with Temperature, showing RDS(ON) versus Junction Temperature (TJ) for VGS = 10V, ID = 25A.
Figure 8: Gate Threshold Variation vs. Junction Temperature, showing VGS(TH) versus Junction Temperature (TJ) for ID = 1mA and ID = 250μA.
Figure 9: Diode Forward Voltage vs. Current, showing VSD versus Source Current (IS) for various Junction Temperatures (TJ).
Figure 10: Typical Junction Capacitance, showing Ciss, Coss, and Crss versus Drain-Source Voltage (VDS) at 1MHz.
Figure 11: Gate Charge, showing Gate-Source Voltage (VGS) versus Total Gate Charge (Qg) for VDS = 20V, ID = 25A.
Figure 12: SOA, Safe Operation Area, showing Drain Current (ID) versus Drain-Source Voltage (VDS) for various pulse widths and duty cycles.
Figure 13: Transient Thermal Resistance, showing r(t) versus Pulse Duration Time (t1) for various duty cycles (D).
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
| Dim | Min | Max | Typ | Dim | Min | Max | Typ |
|---|---|---|---|---|---|---|---|
| A | 0.90 | 1.10 | 1.00 | D | 5.15 BSC | -- | -- |
| A1 | 0 | 0.05 | -- | D1 | 4.70 | 5.10 | 4.90 |
| b | 0.30 | 0.50 | 0.41 | D2 | 3.56 | 3.96 | 3.76 |
| b2 | 0.20 | 0.35 | 0.25 | D2a | 3.78 | 4.18 | 3.98 |
| b4 | 0.25REF | -- | -- | E | 6.40 BSC | -- | -- |
| c | 0.230 | 0.330 | 0.277 | E1 | 5.60 | 6.00 | 5.80 |
| -- | -- | -- | -- | E2 | 3.46 | 3.86 | 3.66 |
| -- | -- | -- | -- | E2a | 4.195 | 4.595 | 4.395 |
| -- | -- | -- | -- | e | 1.27 BSC | -- | -- |
| -- | -- | -- | -- | k | 1.05 | -- | -- |
| -- | -- | -- | -- | L | 0.635 | 0.835 | 0.735 |
| -- | -- | -- | -- | La | 0.635 | 0.835 | 0.735 |
| -- | -- | -- | -- | L1 | 0.200 | 0.400 | 0.300 |
| -- | -- | -- | -- | L4 | 0.025 | 0.225 | 0.125 |
| -- | -- | -- | -- | M | 3.205 | 4.005 | 3.605 |
| -- | -- | -- | -- | θ | 10° | 12° | 11° |
| -- | -- | -- | -- | θ1 | 6° | 8° | 7° |
Diagram showing the package outline dimensions for PowerDI5060-8 (Type UX), including detailed measurements and reference points like 'DETAIL A'.
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
| Dimensions | Value (in mm) |
|---|---|
| C | 1.270 |
| G | 0.660 |
| G1 | 0.820 |
| X | 0.610 |
| X1 | 4.100 |
| X2 | 5.190 |
| X3 | 4.420 |
| Y | 1.270 |
| Y1 | 1.020 |
| Y2 | 3.810 |
| Y3 | 6.610 |
Diagram showing the suggested pad layout for the PowerDI5060-8 (Type UX) package, illustrating the placement of component pads on a PCB.
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