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DMTH10H2M5STLW: 100V 175°C N-Channel MOSFET

Product Overview

The Diodes Incorporated DMTH10H2M5STLW is a high-performance N-channel enhancement mode MOSFET. It features a 100V breakdown voltage, operates up to 175°C, and offers a low on-resistance (RDS(ON)) of 2.2mΩ at 10V VGS. This device is designed to minimize RDS(ON) while maintaining superior switching performance.

Housed in the compact POWERDI®1012-8 package, it is suitable for applications requiring high efficiency and reliability.

Key Features

Rated to +175°C for high ambient temperature environments.
Low RDS(ON) for minimized on-state losses and high conversion efficiency.
100% Unclamped Inductive Switching (UIS) tested for enhanced reliability.
Wettable flank for improved optical inspection.
Lead-free and RoHS compliant.
Halogen and Antimony free ("Green" device).

Applications

This MOSFET is ideal for power management and load switching applications, including:

Motor control
DC-DC converters
Power management systems

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