DMTH15H017SPSWQ
150V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8
Product Summary
| BVDSS | RDS(on) Max | ID Max @ Tc = +25°C |
| 150V | 19mΩ @ VGS = 10V | 61A |
| 22mΩ @ VGS = 8V | 40A |
Features and Benefits
- Rated to +175°C – Ideal for High Ambient Temperature Environments
- 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
- Thermally Efficient Package – Cooler Running Applications
- High Conversion Efficiency
- Low RDS(on) – Minimizes On-State Losses
- Low Input Capacitance
- Fast Switching Speed
- <1.1mm Package Profile – Ideal for Thin Applications (PowerDI®)
- Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. "Green" Device (Note 3)
- The DMTH15H017SPSWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/
Description and Applications
This new generation n-channel enhancement mode MOSFET is designed to minimize RDS(on) yet maintain superior switching performance. This device is ideal for use in:
- Motor control
- DC-DC converters
- Power management
Mechanical Data
- Package: PowerDI5060-8
- Package Material: Molded Plastic, "Green" Molding Compound
- UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Connections: See Diagram Below
- Terminal Finish - Matte Tin Annealed over Copper Lead-Frame. Solderable per MIL-STD-202, Method 208 ?
- Weight: 0.097 grams (Approximate)
Package Diagrams
PowerDI5060-8/SWP (Type UX)
Top View: Shows three terminals labeled G (Gate), S (Source), and D (Drain).
Bottom View: Shows the same three terminals.
Internal Schematic: Depicts a standard MOSFET structure with Gate (G), Drain (D), and Source (S) terminals.
Top View Pin Configuration: Illustrates the physical arrangement of the D, S, and G pins on the package.
Ordering Information (Note 4)
| Orderable Part Number | Package | Qty. | Carrier |
| DMTH15H017SPSWQ-13 | PowerDI5060-8/SWP (Type UX) | 2,500 | Tape & Reel |
Notes
- EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
- See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free.
- Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
- For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
The marking on the device includes:
- 'D' logo: Manufacturer's Marking (DIODES INCORPORATED).
- 'TH1517SW': Product Type Marking Code.
- 'YYWW': Date Code Marking, where YY represents the last two digits of the year (e.g., 25 for 2025) and WW represents the week code (01 to 53).
The diagram shows the layout of these markings on the package.
Maximum Ratings (@ TA = +25°C, unless otherwise specified.)
| Characteristic | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | 150 | V |
| Gate-Source Voltage | VGSS | ±20 | V |
| Continuous Drain Current VGS = 10V (Note 6) | ID | 11 (Steady State @ TA = +25°C) | A |
| 7 (Steady State @ TA = +100°C) | A | ||
| Continuous Drain Current VGS = 10V (Note 7) | ID | 61 (Steady State @ TC = +25°C) | A |
| 40 (Steady State @ TC = +100°C) | A | ||
| Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) | IDM | 250 | A |
| Maximum Continuous Body Diode Forward Current | Is | 61 | A |
| Pulsed Body Diode Current (10µs Pulse, Duty Cycle = 1%) | ISM | 250 | A |
| Avalanche Current (Note 8), L = 3mH | IAS | 14.4 | A |
| Avalanche Energy (Note 8), L = 3mH | EAS | 311 | mJ |
Thermal Characteristics
| Characteristic | Symbol | Value | Unit |
| Total Power Dissipation (Note 5) | PD | 1.5 (TA = +25°C) | W |
| Thermal Resistance, Junction to Ambient (Note 5) | ROJA | 97 (Steady State) | °C/W |
| Total Power Dissipation (Note 6) | PD | 3.2 (TA = +25°C) | W |
| Thermal Resistance, Junction to Ambient (Note 6) | ROJA | 47 (Steady State) | °C/W |
| Total Power Dissipation (Note 7) | PD | 107 (TC = +25°C) | W |
| Thermal Resistance, Junction to Case (Note 7) | ROJC | 1.4 (TC = +25°C) | °C/W |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +175 | °C |
Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
| OFF CHARACTERISTICS (Note 9) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | 150 | – | – | V | VGS = 0V, ID = 10mA |
| Zero Gate Voltage Drain Current | IDSS | – | – | 1 | µA | VDS = 120V, VGS = 0V |
| Gate-Source Leakage | IGSS | – | – | ±100 | nA | VGS = ±20V, VDS = 0V |
| ON CHARACTERISTICS (Note 9) | ||||||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | – | V | VDS = VGS, ID = 250µA |
| Static Drain-Source On-Resistance | RDS(on) | – | 14 | 19 | mΩ | VGS = 10V, ID = 20A |
| – | 16 | 22 | VGS = 8V, ID = 15A | |||
| Diode Forward Voltage | VSD | – | 0.8 | 1.2 | V | VGS = 0V, Is = 20A |
| DYNAMIC CHARACTERISTICS (Note 10) | ||||||
| Input Capacitance | Ciss | – | 2344 | – | pF | VDS = 75V, VGS = 0V f = 1MHz |
| Output Capacitance | Coss | – | 213 | – | ||
| Reverse Transfer Capacitance | Crss | – | 6.9 | – | ||
| Gate Resistance | Rg | – | 1.8 | – | Ω | VDS = 0V, VGS = 0V, f = 1MHz |
| Total Gate Charge | Qg | – | 34 | – | nC | VDD = 75V, ID = 20A, VGS = 10V |
| Gate-Source Charge | Qgs | – | 12 | – | ||
| Gate-Drain Charge | Qgd | – | 9 | – | ||
| Turn-On Delay Time | tD(on) | – | 13.2 | – | ns | VDD = 75V, VGS = 10V, ID = 20A, Rg = 6Ω |
| Turn-On Rise Time | tr | – | 22.4 | – | ||
| Turn-Off Delay Time | tD(off) | – | 26.3 | – | ||
| Turn-Off Fall Time | tF | – | 16.1 | – | ||
| Reverse-Recovery Time | tRR | – | 69 | – | ns | IF = 20A, di/dt = 100A/µs |
| Reverse-Recovery Charge | QRR | – | 196 | – | nC | |
Graph Descriptions
Figure 1: Typical Output Characteristic. The Y-axis represents Drain Current (ID) in Amperes, and the X-axis represents Drain-Source Voltage (VDS) in Volts. Curves are shown for various Gate-Source Voltages (VGS) ranging from 5.0V to 10.0V, illustrating the drain current saturation behavior.
Figure 2: Typical Transfer Characteristic. The Y-axis represents Drain Current (ID) in Amperes, and the X-axis represents Gate-Source Voltage (VGS) in Volts. Curves are plotted for different ambient temperatures (-55°C to 175°C) at a constant VDS of 5V, showing the relationship between gate voltage and drain current.
Figure 3: Typical On-Resistance vs. Drain Current and Gate Voltage. The Y-axis represents Drain-Source On-Resistance (RDS(on)) in Ohms, and the X-axis represents Drain Current (ID) in Amperes. Curves are shown for various Gate-Source Voltages (VGS) of 6V, 8V, and 10V, demonstrating how RDS(on) changes with current and gate drive.
Figure 4: Typical Transfer Characteristic. The Y-axis represents Drain-Source On-Resistance (RDS(on)) in Ohms, and the X-axis represents Gate-Source Voltage (VGS) in Volts. This graph shows RDS(on) versus VGS for a constant Drain Current (ID) of 20A.
Figure 5: Typical On-Resistance vs. Drain Current and Temperature. The Y-axis represents Drain-Source On-Resistance (RDS(on)) in Ohms, and the X-axis represents Drain Current (ID) in Amperes. Curves are shown for various junction temperatures (-55°C to 175°C) at a constant VGS of 10V, illustrating the impact of temperature on RDS(on).
Figure 6: On-Resistance Variation with Temperature. The Y-axis represents normalized Drain-Source On-Resistance (RDS(on) NORMALIZED), and the X-axis represents Junction Temperature (TJ) in °C. Two curves are shown: one for VGS = 10V, ID = 20A, and another for VGS = 8V, ID = 15A, indicating how RDS(on) increases with temperature.
Figure 7: On-Resistance Variation with Temperature. The Y-axis represents Drain-Source On-Resistance (RDS(on)) in Ohms, and the X-axis represents Junction Temperature (TJ) in °C. This graph shows RDS(on) versus TJ for VGS = 8V, ID = 15A and VGS = 10V, ID = 20A.
Figure 8: Gate Threshold Variation vs. Junction Temperature. The Y-axis represents Gate Threshold Voltage (VGS(TH)) in Volts, and the X-axis represents Junction Temperature (TJ) in °C. Curves are shown for different Drain Currents (ID = 1mA and ID = 250µA), illustrating the temperature dependence of the gate threshold voltage.
Figure 9: Diode Forward Voltage vs. Current. The Y-axis represents Source-Drain Voltage (VSD) in Volts, and the X-axis represents Source Current (IS) in Amperes. Curves are shown for VGS = 0V at various temperatures (-55°C to 175°C), depicting the forward voltage drop of the intrinsic body diode.
Figure 10: Typical Junction Capacitance. The Y-axis represents Junction Capacitance (C) in pF, and the X-axis represents Drain-Source Voltage (VDS) in Volts. Curves for Ciss, Coss, and Crss are shown at a frequency of 1MHz.
Figure 11: Gate Charge. The Y-axis represents Gate Charge (Qg) in nC, and the X-axis represents Gate-Source Voltage (VGS) in Volts. This graph shows the total gate charge characteristics for VDS = 75V, ID = 20A.
Figure 12: SOA, Safe Operation Area. The Y-axis represents Drain Current (ID) in Amperes, and the X-axis represents Drain-Source Voltage (VDS) in Volts. The graph displays the safe operating area for various pulse widths (PW) and DC operation, with VGS = 10V.
Figure 13: Transient Thermal Resistance. The Y-axis represents Transient Thermal Resistance (r(t)) in °C/W, and the X-axis represents Pulse Duration Time (t1) in seconds. Curves are shown for various duty cycles (D), illustrating the thermal transient response of the device.
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8/SWP (Type UX)
| Dim | PowerDI5060-8/SWP (Type UX) | ||
| Min | Max | Typ | |
| A | 0.90 | 1.10 | 1.00 |
| A1 | 0 | 0.05 | – |
| b | 0.30 | 0.50 | 0.41 |
| b2 | 0.20 | 0.35 | 0.25 |
| b4 | 0.25REF | ||
| c | 0.230 | 0.330 | 0.277 |
| D | 5.15 BSC | ||
| D1 | 4.70 | 5.10 | 4.90 |
| D2 | 3.56 | 3.96 | 3.76 |
| D2a | 3.78 | 4.18 | 3.98 |
| E | 6.40 BSC | ||
| E1 | 5.60 | 6.00 | 5.80 |
| E2 | 3.46 | 3.86 | 3.66 |
| E2a | 4.195 | 4.595 | 4.395 |
| e | 1.27BSC | ||
| k | 1.05 | – | – |
| L | 0.635 | 0.835 | 0.735 |
| La | 0.635 | 0.835 | 0.735 |
| L1 | 0.200 | 0.400 | 0.300 |
| L1a | 0.050REF | ||
| L4 | 0.025 | 0.225 | 0.125 |
| M | 3.205 | 4.005 | 3.605 |
| θ | 10° | 12° | 11° |
| θ1 | 6° | 8° | 7° |
All Dimensions in mm
The package diagram illustrates the physical dimensions and features of the PowerDI5060-8/SWP (Type UX) package.
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI5060-8/SWP (Type UX)
| Dimensions | Value (in mm) |
| C | 1.270 |
| G | 0.660 |
| G1 | 0.820 |
| X | 0.610 |
| X1 | 4.100 |
| X2 | 4.420 |
| Y | 1.270 |
| Y1 | 1.020 |
| Y2 | 3.810 |
| Y3 | 6.610 |
The pad layout diagram shows the recommended footprint for the PowerDI5060-8/SWP (Type UX) package.
Important Notice
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