DMTH4007LPS
40V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI®5060-8
Product Summary
| Characteristic | BVDSS | RDS(ON) Max | Tc = +25°C | Unit |
|---|---|---|---|---|
| 40V | 6.5mΩ @ VGS = 10V | 85A | ||
| 9.8mΩ @ VGS = 4.5V | 70A |
Description and Applications
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance.
- Notebook battery power management
- DC-DC converters
- Load switches
Features
- Rated to +175°C – Ideal for High Ambient Temperature Environments
- 100% Unclamped Inductive Switching - Ensures More Reliable and Robust End Application
- Thermally Efficient Package - Cooler Running Applications
- High Conversion Efficiency
- Low RDS(ON) – Minimizes On-State Losses
- Low Input Capacitance
- Fast Switching Speed
- < 1.1mm Package Profile - Ideal for Thin Applications
- Lead-Free Finish; RoHS Compliant
- Halogen and Antimony Free. "Green" Device
- An automotive-compliant part is available under a separate datasheet (DMTH4007LPSQ)
Mechanical Data
- Package: PowerDI®5060-8
- Package Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
- Weight: 0.097 grams (Approximate)
Ordering Information
| Orderable Part Number | Package | Qty. | Carrier |
|---|---|---|---|
| DMTH4007LPS-13 | PowerDI5060-8 | 2,500 | Tape & Reel |
Marking Information
The marking includes the Manufacturer's Code (D), Product Type Marking Code (H4007LS), and Date Code Marking (YYWW), where YY represents the last two digits of the year and WW represents the week code.
Maximum Ratings
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 40 | V | |
| Gate-Source Voltage | VGSS | ±20 | V | |
| Continuous Drain Current, VGS = 10V (Note 5) | ID | 15 | A | TA = +25°C |
| 11 | A | TA = +100°C | ||
| Continuous Drain Current, VGS = 10V (Note 6) Steady State | ID | 85 | A | Tc = +25°C |
| 60 | A | Tc = +100°C | ||
| Maximum Continuous Body Diode Forward Current (Note 6) | Is | 85 | A | |
| Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) | IDM | 340 | A | |
| Avalanche Current, L = 0.1mH | IAS | 20 | A | |
| Avalanche Energy, L = 0.1mH | EAS | 20 | mJ |
Thermal Characteristics
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Total Power Dissipation (Note 5) | PD | 2.7 | W | TA = +25°C |
| Thermal Resistance, Junction to Ambient (Note 5) | ROJA | 55 | °C/W | Steady State |
| Total Power Dissipation (Note 6) | PD | 83.3 | W | Tc = +25°C |
| Thermal Resistance, Junction to Case (Note 6) | ReJC | 1.8 | °C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +175 | °C |
Electrical Characteristics
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| OFF CHARACTERISTICS (Note 7) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS = 0V, ID = 1mA | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μΑ | VDS = 32V, VGS = 0V | ||
| Gate-Source Leakage | IGSS | ±100 | nA | VGS = ±20V, VDS = 0V | ||
| ON CHARACTERISTICS (Note 7) | ||||||
| Gate Threshold Voltage | VGS(TH) | 1 | 3 | V | VDS = VGS, ID = 250μΑ | |
| Static Drain-Source On-Resistance | RDS(ON) | 5.4 | 6.5 | mΩ | VGS = 10V, ID = 20A | |
| 8.4 | 9.8 | mΩ | VGS = 4.5V, ID = 20A | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS = 0V, Is = 20A | ||
| DYNAMIC CHARACTERISTICS (Note 8) | ||||||
| Input Capacitance | Ciss | 1,895 | pF | VDS = 30V, VGS = 0V, f = 1MHz | ||
| Output Capacitance | Coss | 485 | pF | |||
| Reverse Transfer Capacitance | Crss | 20.9 | pF | |||
| Gate Resistance | Rg | 0.62 | Ω | VDS = 0V, VGS = 0V, f = 1MHz | ||
| Total Gate Charge (VGS = 4.5V) | Qg | 12.4 | nC | VDS = 30V, ID = 20A | ||
| Total Gate Charge (VGS = 10V) | Qg | 29.1 | nC | |||
| Gate-Source Charge | Qgs | 5.9 | nC | |||
| Gate-Drain Charge | Qgd | 3.5 | nC | |||
| Turn-On Delay Time | tD(ON) | 5.4 | ns | VDD = 30V, VGS = 10V, ID = 20A, RG = 3Ω | ||
| Turn-On Rise Time | tR | 4.5 | ns | |||
| Turn-Off Delay Time | tD(OFF) | 16.2 | ns | |||
| Turn-Off Fall Time | tF | 3.5 | ns | |||
| Body Diode Reverse-Recovery Time | tRR | 30.6 | ns | IF = 20A, di/dt = 100A/μs | ||
| Body Diode Reverse-Recovery Charge | QRR | 28.1 | nC | |||
Notes
- Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
- Thermal resistance from junction to soldering point (on the exposed drain pad).
- Short duration pulse test used to minimize self-heating effect.
- Guaranteed by design. Not subject to product testing.
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI®5060-8
| Dim | PowerDI®5060-8 | Type | ||
|---|---|---|---|---|
| Min | Max | Typ | ||
| A | 0.90 | 1.10 | 1.00 | |
| A1 | 0.00 | 0.05 | ||
| b | 0.33 | 0.51 | 0.41 | |
| b2 | 0.200 | 0.350 | 0.273 | |
| b3 | 0.40 | 0.80 | 0.60 | |
| C | 0.230 | 0.330 | 0.277 | |
| D | 4.75 | 5.15 | 4.90 | BSC |
| D1 | 3.70 | 4.10 | 3.90 | |
| D2 | 3.70 | 4.10 | 3.90 | |
| D3 | 3.90 | 4.30 | 4.10 | |
| E | 5.60 | 6.15 | 5.80 | BSC |
| E1 | 5.60 | 6.00 | 5.80 | |
| E2 | 3.28 | 3.68 | 3.48 | |
| E3 | 3.99 | 4.39 | 4.19 | |
| e | 1.27 | BSC | ||
| G | 0.51 | 0.71 | 0.61 | |
| K | 0.51 | |||
| L | 0.51 | 0.71 | 0.61 | |
| L1 | 0.100 | 0.200 | 0.175 | |
| M | 3.235 | 4.035 | 3.635 | |
| M1 | 1.00 | 1.40 | 1.21 | |
| Θ | 10° | 12° | 11° | |
| θ1 | 6° | 8° | 7° |
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI®5060-8
| Dimensions | Value (in mm) |
|---|---|
| C | 1.270 |
| X1 | 4.100 |
| X2 | 0.755 |
| X3 | 4.420 |
| X4 | 5.610 |
| Y | 1.270 |
| Y1 | 0.600 |
| Y2 | 1.020 |
| Y3 | 0.295 |
| Y4 | 1.825 |
| Y5 | 3.810 |
| Y6 | 0.180 |
| Y7 | 6.610 |
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