DXTN78030DFG: 30V NPN ULTRA-LOW VCE(sat) TRANSISTOR IN PowerDI3333-8

Manufacturer: Diodes Incorporated

Features

Mechanical Data

Applications

Ordering Information

Orderable Part Number Package Marking Reel Size (inches) Tape Width (mm) Qty. Carrier
DXTN78030DFG-7 PowerDI3333-8/SWP 2X2 7 12 2,000 Reel

Notes:

  1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
  2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free.
  3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
  4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

PowerDI3333-8/SWP (Type UX)

2X2 = Product Type Marking Code

YYWW = Date Code Marking

YY = Last Two Digits of Year (e.g., 25 = 2025)

WW = Week Code (01 to 53)

PowerDI is a registered trademark of Diodes Incorporated in the United States and other countries.

Absolute Maximum Ratings

(@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 8 V
Continuous Collector Current (Note 5) Ic 4 A
Continuous Collector Current (Note 7) Ic 9 A
Peak Pulse Current ICM 15 A

Thermal Characteristics

(@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD 900 mW
Power Dissipation (Note 6) PD 1.6 W
Power Dissipation (Note 7) PD 2.4 W
Thermal Resistance, Junction to Ambient (Note 5) ROJA 140 °C/W
Thermal Resistance, Junction to Ambient (Note 6) ROJA 92 °C/W
Thermal Resistance, Junction to Ambient (Note 7) ROJA 62.5 °C/W
Thermal Resistance, Junction to Case (Note 7) ReJC 8 °C/W
Thermal Resistance, Junction to Leads (Note 8) ReJL 6.5 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C

ESD Ratings

(Note 9)

Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Electrostatic Discharge - Charged Device Model ESD CDM 1,000 V IV

Notes:

  1. For a device mounted with the collector tab on MRP FR4-PCB; device is measured under still air conditions whilst operating in a steady state.
  2. Same as Note 5, except the device is mounted on 15mm x 15mm 2oz copper.
  3. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.
  4. Thermal resistance from junction to solder-point (at the collector tab).
  5. Refer to JEDEC specifications JESD22-A114, JESD22-A115 and JESD22-C101.

Electrical Characteristics

(@TA = +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 80 - - V IC = 100μA
Collector-Emitter Breakdown Voltage (Note 10) BVCEO 30 - - V IC = 10mA
Emitter-Collector Breakdown Voltage BVECO 5 - - V IE = 100μA
Emitter-Base Breakdown Voltage BVEBO 8 - - V IE = 100μA
Collector Cutoff Current ICBO - 100 nA VCB = 80V
Collector Cutoff Current ICES - 1 μA VCB = 80V, TA = +125°C
Collector Cutoff Current ICES - 300 nA VCB = 24V
Emitter Cutoff Current IEBO - 50 nA VEB = 7V
Collector-Emitter Saturation Voltage (Note 10) VCE(sat) - 30 mV IC = 100mA, IB = 1mA
Collector-Emitter Saturation Voltage (Note 10) VCE(sat) - 20 35 mV IC = 1A, IB = 100mA
Collector-Emitter Saturation Voltage (Note 10) VCE(sat) - 55 75 mV IC = 2A, IB = 40mA
Collector-Emitter Saturation Voltage (Note 10) VCE(sat) - 90 125 mV IC = 4A, IB = 80mA
Collector-Emitter Saturation Voltage (Note 10) VCE(sat) - 140 175 mV IC = 9A, IB = 450mA
Base-Emitter Saturation Voltage (Note 10) VBE(sat) - 850 1,050 mV IC = 4A, IB = 80mA
Base-Emitter Saturation Voltage (Note 10) VBE(sat) - 1 1.15 V IC = 9A, IB = 450mA
Base-Emitter Turn-On Voltage (Note 10) VBE(on) - 750 900 mV IC = 4A, VCE = 2V
Base-Emitter Turn-On Voltage (Note 10) VBE(on) - 780 900 mV IC = 9A, VCE = 2V
DC Current Gain (Note 10) hFE 200 - 300 - IC = 10mA, VCE = 2V
DC Current Gain (Note 10) hFE - 200 300 - IC = 100mA, VCE = 2V
DC Current Gain (Note 10) hFE - 270 370 - IC = 1A, VCE = 2V
DC Current Gain (Note 10) hFE - 250 350 - IC = 2A, VCE = 2V
DC Current Gain (Note 10) hFE - 200 300 - IC = 4A, VCE = 2V
DC Current Gain (Note 10) hFE - 100 180 - IC = 9A, VCE = 2V
Input Capacitance Cibo - 340 - pF VEB = 0.5V, f = 1MHz
Output Capacitance Cobo - 30 - pF VCB = 10V, f = 1MHz
Current Gain-Bandwidth Product fT 150 260 - MHz VCE = 5V, IC = 100mA, f = 100MHz
Turn-On Time td - 11.6 - ns Vcc = 10V, Ic = 4A, IB1=-IB2 = 400mA
Turn-On Time tr - 42 - ns Vcc = 10V, Ic = 4A, IB1=-IB2 = 400mA
Turn-Off Time tf - 179 - ns Vcc = 10V, Ic = 4A, IB1=-IB2 = 400mA

Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

Typical Electrical Characteristics

(@TA = +25°C, unless otherwise specified.)

Fig. 7 hFE v Ic

Fig. 8 VCE(sat) v Ic

Fig. 9 VCE(sat) v Ic

Fig. 10 VBE(on) v Ic

Fig. 11 VBE(sat) v Ic

Fig. 12 Typical Junction Capacitance

Thermal Characteristics and Derating Information

Fig 1. Safe Operating Area

Fig 2. Transient Thermal Impedance

Fig 3. Transient Thermal Impedance

Fig 4. Pulse Power Dissipation

Fig 5. Derating Curve

Typical Electrical Characteristics (continued)

(@TA = +25°C, unless otherwise specified.)

Fig. 13 RCE(sat) v Ic

Fig. 14 RCE(sat) v T amb

Fig. 15 Switching Performance

Package Outline Dimensions

PowerDI3333-8/SWP (Type UX)

Dim Min Max Typ Unit
A 0.75 0.85 0.80 mm
A1 0.00 0.05 - mm
b 0.25 0.40 0.32 mm
C 0.10 0.25 0.15 mm
D 3.20 3.40 3.30 mm
D1 2.95 3.15 3.05 mm
D2 2.30 2.70 2.50 mm
E 3.20 3.40 3.30 mm
E1 2.95 3.15 3.05 mm
E2 1.60 2.00 1.80 mm
E3 0.95 1.35 1.15 mm
E4 0.10 0.30 0.20 mm
e - - 0.65 mm
k 0.50 0.90 0.70 mm
L 0.30 0.50 0.40 mm
θ 12° 10° -

All Dimensions in mm

Suggested Pad Layout

PowerDI3333-8/SWP (Type UX)

Dimensions Value (in mm)
X 0.650
X1 0.420
X2 0.420
X3 0.230
X4 2.600
Y 3.500
Y1 0.700
Y2 0.550
Y3 1.650
Y4 0.600
Y5 2.450
Y6 0.400
C 3.700

Note: 11. Side wall tin plated package for wettable flanks in AOI.

IMPORTANT NOTICE

1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes' products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes' products. Diodes' products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes' products for their intended applications, (c) ensuring their applications, which incorporate Diodes' products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications.

3. Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes' websites, harmless against all damages and liabilities.

4. Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes' website) under this document.

5. Diodes' products are provided subject to Diodes' Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

6. Diodes' products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes' products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application.

7. While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes.

8. Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use.

9. This Notice may be periodically updated with the most recent version available at https://www.diodes.com/about/company/terms-and-conditions/important-notice

The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries. All other trademarks are the property of their respective owners.

PDF preview unavailable. Download the PDF instead.

DXTN78030DFG Microsoft Word 适用于 Microsoft 365

Related Documents

Preview Diodes DXTN78100CFGQ: 100V NPN Ultra-Low VCE(sat) Transistor Datasheet
Datasheet for the Diodes Incorporated DXTN78100CFGQ, a 100V NPN ultra-low VCE(sat) transistor in a PowerDI3333-8 package, suitable for automotive applications. Includes features, electrical characteristics, thermal data, and package information.
Preview DXTN78060DFGQ: 60V NPN Ultra-Low VCE(sat) Transistor
Datasheet for the DXTN78060DFGQ, a 60V NPN ultra-low VCE(sat) transistor in a PowerDI3333-8 package. Includes features, mechanical data, applications, ordering information, electrical characteristics, and thermal performance graphs.
Preview DXTN80060DFG 60V NPN Ultra-Low VCE(sat) Transistor Datasheet
Datasheet for the Diodes Incorporated DXTN80060DFG, a 60V NPN Ultra-Low VCE(sat) Transistor in a PowerDI3333-8 package. Features include high current capability, low saturation voltage, and suitability for high-temperature environments. Applications include MOSFET/IGBT gate drivers, load switches, and DC-DC converters.
Preview Diodes Incorporated MOSFETs: Ultra-High Performance Solutions for Automotive, Industrial, and Consumer Applications
Explore Diodes Incorporated's extensive portfolio of ultra-high performance MOSFETs, including Silicon Carbide (SiC) and Silicon MOSFETs. Discover advanced packaging technologies, automotive-grade reliability (AEC-Q101, IATF 16949), and solutions for DC-DC conversion, motor control, automotive electronics, and more. This catalog details product specifications, package types, and application focuses.
Preview Diodes ZXTN2018F: 60V NPN Low Saturation Transistor Datasheet
Technical datasheet for the Diodes ZXTN2018F, a 60V NPN low saturation transistor in a SOT23 package. Key features include 5A continuous collector current, low VCE(sat), and high power dissipation. Suitable for motor drives, gate driving, and relay applications.
Preview DGD0506A High-Frequency Half-Bridge Gate Driver Datasheet | Diodes Incorporated
Technical datasheet for the Diodes Incorporated DGD0506A, a high-frequency half-bridge gate driver IC with programmable deadtime. Features include 50V high-side driver, 1.5A source/2.0A sink capability, and wide operating temperature range.
Preview DMTH42M5SPSW: 40V 175°C N-Channel Enhancement Mode MOSFET Datasheet by Diodes Incorporated
Technical datasheet for the Diodes Incorporated DMTH42M5SPSW, a 40V, 175°C N-Channel Enhancement Mode Power MOSFET. Details include electrical characteristics, maximum ratings, thermal performance, and application information for high-efficiency power management.
Preview DGD0507A High-Frequency High-Side and Low-Side Gate Driver Datasheet | Diodes Incorporated
Datasheet for the Diodes Incorporated DGD0507A, a 50V high-frequency gate driver for N-channel MOSFETs. Features include 1.5A source/2.0A sink current, internal bootstrap diode, UVLO, and W-DFN3030-10 package. Includes electrical characteristics, timing, and application information.