DGD0507A High-Frequency High-Side and Low-Side Gate Driver

Manufacturer: Diodes Incorporated

IMPORTANT NOTICE: THE DGD0507A IS NOT RECOMMENDED FOR NEW DESIGNS. PLEASE CONTACT US.

Description

The DGD0507A is a high-frequency gate driver capable of driving n-channel MOSFETs. The floating high-side driver is rated up to 50V. The DGD0507A logic inputs are compatible with standard TTL and CMOS levels (down to 3.3V) to interface easily with MCUs. UVLO (Undervoltage Lockout) for high-side and low-side will protect a MOSFET with loss of supply. Cross conduction prevention logic prevents the HO and LO outputs from being on at the same time. Fast and well-matched propagation delays enable higher switching frequencies, leading to smaller, more compact power switching designs. An internal bootstrap diode is included to minimize space. The DGD0507A is offered in the W-DFN3030-10 (Type TH) package and operates over an extended temperature range of -40°C to +125°C.

Applications

  • DC-DC converters
  • Motor control
  • Battery-powered hand tools
  • eCig devices
  • Class D power amplifiers

Features

  • 50V Floating High-side Driver
  • Drives Two N-channel MOSFETs in a Half-Bridge Configuration
  • 1.5A Source / 2.0A Sink Output Current Capability
  • Internal Bootstrap Diode Included
  • Undervoltage Lockout for High-Side and Low-Side Drivers
  • Delay Matching: Typical of 5ns
  • Propagation Delay: Typical of 20ns
  • Logic Input (HIN, LIN, EN) 3.3V Capability
  • Ultra-Low Standby Currents (< 1µA)
  • Extended Temperature Range: -40°C to +125°C
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen and Antimony free. “Green” Device
  • For automotive applications requiring specific change control (e.g., AEC-Q100/101/104/200 qualified, PPAP capable, IATF 16949 certified facilities), contact Diodes Incorporated or a local representative. More information on quality definitions.

Mechanical Data

  • Package: W-DFN3030-10
  • Package Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0.
  • Moisture Sensitivity: Level 3 per J-STD-020.
  • Terminals: Matte Tin Finish, Solderable per MIL-STD-202, Method 208.
  • Weight: 0.017 grams (Approximate).

Package Outline Dimensions

Refer to Diodes.com/package-outlines.html for the latest version.

W-DFN3030-10 (Type TH) Dimensions (in mm):

DimMinMaxTyp
A0.700.800.75
A1--0.050.02
A30.180.250.20
b0.180.300.25
D2.903.103.00
D22.402.602.50
e0.50BSC
e12.00BSC
E2.903.103.00
E21.451.651.55
h0.200.300.25
L0.300.500.40

Suggested Pad Layout

Refer to Diodes.com/package-outlines.html for the latest version.

W-DFN3030-10 (Type TH) Pad Dimensions (in mm):

DimensionsValue (in mm)
C0.500
X0.300
X12.300
X22.600
Y0.600
Y13.300
Y21.650

Ordering Information

Orderable Part NumberPackageMarkingReel Size (inches)Tape Width (mm)Packing Qty.Carrier
DGD0507AFN-7W-DFN3030-10 (Type TH)DGD0507A783,000Reel

Notes:

  1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
  2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
  3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
  4. For packaging details, go to https://www.diodes.com/design/support/packaging/diodes-packaging/.

Marking Information

W-DFN3030-10 (Type TH)

DGD0507A = Product Type Marking Code

YY = Year (e.g., 25 = 2025)

WW = Week (01 to 53)

Example Marking: DGD0507A YYWW

Pin Assignments

Top View: W-DFN3030-10 (Type TH)

Pin NumberPin NameFunction
1VCCLow-Side and Logic Supply
2NCNo Connect (No Internal Connection)
3VBHigh-Side Floating Supply
4HOHigh-Side Gate Drive Output
5VSHigh-Side Floating Supply Return
6ENLogic Input Enable, a Logic Low turns off Gate Driver
7HINLogic Input for High-Side Gate Driver, in Phase with HO
8LINLogic Input for Low-Side Gate Driver, in Phase with LO
9COMLow-Side and Logic Return
10LOLow-Side Gate Drive Output
PADSubstrateConnect to COM on PCB

Functional Block Diagram

The DGD0507A integrates several functional blocks to manage high-side and low-side MOSFET driving. Key components include:

  • UV Detect: Monitors supply voltages for undervoltage conditions.
  • Level Shift: Interfaces logic inputs with the high-side driver.
  • High Side Driver: Drives the high-side MOSFET.
  • Low Side Driver: Drives the low-side MOSFET.
  • Delay Block: Manages timing to prevent shoot-through.
  • Logic Inputs: HIN (High-Side Input), LIN (Low-Side Input), EN (Enable).
  • Outputs: HO (High-Side Output), LO (Low-Side Output).
  • Supplies/Returns: VCC (Low-Side Supply), VB (High-Side Supply), VS (High-Side Return), COM (Low-Side Return).
  • Substrate: Connected to COM on the PCB.

The diagram illustrates how these blocks are interconnected to control the MOSFETs, with logic inputs triggering the respective drivers, protected by UVLO and cross-conduction prevention.

Electrical Characteristics

Absolute Maximum Ratings

(@TA = +25°C, unless otherwise specified.)

CharacteristicSymbolValueUnit
High-Side Floating Positive Supply VoltageVB-0.3 to +60V
High-Side Floating Negative Supply VoltageVSVB-14 to VB+0.3V
High-Side Floating Output VoltageVHOVS-0.3 to VB+0.3V
Offset Supply Voltage TransientdVS/dt50V/ns
Logic and Low-Side Fixed Supply VoltageVCC-0.3 to +14V
Low-Side Output VoltageVLO-0.3 to VCC+0.3V
Logic Input Voltage (HIN, LIN and EN)VIN-0.3 to VCC+0.3V

Thermal Characteristics

(@TA = +25°C, unless otherwise specified.)

CharacteristicSymbolValueUnit
Power Dissipation Linear Derating Factor (Note 5)PD--W/°C
Thermal Resistance, Junction to Ambient (Note 5)RJA64°C/W
Thermal Resistance, Junction to Case (Note 5)RJC42°C/W
Operating TemperatureTJ-40 to +150°C
Lead Temperature (Soldering, 10s)TL+300°C
Storage Temperature RangeTSTG-55 to +150°C

Note 5: When mounted on a standard JEDEC 2-layer FR-4 board.

Recommended Operating Conditions

ParameterSymbolMinMaxUnit
High-Side Floating SupplyVSVB - 14VB + 8V
High-Side Floating Supply Offset VoltageVS----V
High-Side Floating Output VoltageVHO--50 (Note 7)V
Logic and Low-Side Fixed Supply VoltageVCC814V
Low-Side Output VoltageVLO0VCCV
Logic Input Voltage (HIN, LIN and EN)VIN05V
Ambient TemperatureTA-40+125°C

Notes: 6. Logic operation for VS of -5V to +50V. 7. Provided VB does not exceed absolute maximum rating of 60V.

DC Electrical Characteristics

(VCC = VBS = 12V, COM = VS = 0, @TA = +25°C, unless otherwise specified.) (Note 8)

ParameterSymbolMinTypMaxUnitConditions
Logic "1" Input VoltageVIH2.4----V--
Logic "0" Input VoltageVIL----0.8V--
Enable Logic "1" Input VoltageVENIH1.5----V--
Enable Logic "0" Input VoltageVENIL----0.7V--
Input Voltage HysteresisVINHYS--0.6--V--
Enable Input Voltage HysteresisVENINHYS--0.1--V--
High-Level Output Voltage, VBIAS - VOVOH--0.450.6VIO+ = 100mA
Low-Level Output Voltage, VOVOL--0.150.22VIO- = 100mA
Offset Supply Leakage CurrentILK--15µAVB = VS = 60V
VCC Shutdown Supply CurrentICCSD--01µAVIN = 0 or 5V, VEN = 0
VCC Quiescent Supply CurrentICCQ--130200µAVIN = 0 or 5V
VCC Operating Supply CurrentICCOP--7.3--mAfS = 500kHz, CL = 1000pF
VBS Quiescent Supply CurrentIBSQ--40100µAVIN = 0 or 5V
VBS Operating Supply CurrentIBSOP--7.3--mAfS = 500kHz, CL = 1000pF
Logic "1" Input Bias CurrentIIN+----50µAVIN = 5V
Logic "0" Input Bias CurrentIIN-----5µAVIN = 0
Enable Logic "1" Input Bias CurrentIENIN+--4360µAVIN = 5V
Enable Logic "0" Input Bias CurrentIENIN---05µAVIN = 0
VBS Supply Undervoltage Positive Going ThresholdVBSUV+6.07.08.0V--
VBS Supply Undervoltage Negative Going ThresholdVBSUV-5.66.67.6V--
VCC Supply Undervoltage Positive Going ThresholdVCCUV+6.07.08.0V--
VCC Supply Undervoltage Negative Going ThresholdVCCUV-5.66.67.6V--
Output High Short-Circuit Pulsed CurrentIO+--0.91.5AVO = 0, PW ≤ 10µs
Output Low Short-Circuit Pulsed CurrentIO---1.52.0AVO = 15V, PW ≤ 10µs
Forward Voltage of Bootstrap DiodeVF1--0.67--VIF = 100µA
Forward Voltage of Bootstrap DiodeVF2--1.7--VIF = 100mA

Note 8: The VIN and IIN parameters are applicable to the three logic pins: HIN, LIN and EN. The VO and IO parameters are applicable to the respective output pins: HO and LO.

AC Electrical Characteristics

(VCC = VBS = 12V, COM = VS = 0, CL = 1000pF, @TA = +25°C, unless otherwise specified.)

ParameterSymbolMinTypMaxUnitConditions
Turn-On Propagation DelaytON--2035ns--
Turn-Off Propagation DelaytOFF--2356nsVS = 50V
Delay Matching, HO & LO Turn-OntDM----5ns--
Turn-On Rise TimetR--1630ns--
Turn-Off Fall TimetF--1825ns--

Timing Waveforms

The datasheet includes several timing diagrams illustrating device behavior:

  • Figure 1: Switching Time Waveform Definitions shows the definition of turn-on (tON) and turn-off (tOFF) propagation delays and rise/fall times (tR, tF) for the HO and LO outputs relative to the HIN and LIN input signals.
  • Figure 2: Delay Matching Waveform Definitions illustrates the delay matching (tDM) between the HO and LO outputs for turn-on events.
  • Figure 3: Input / Output Timing Diagram provides a visual example of how the HIN, LIN, and EN input signals translate to the HO and LO output signals over time, demonstrating switching behavior and delays.

Typical Performance Characteristics

The following graphs illustrate the typical performance of the DGD0507A across various supply voltages and temperatures (unless otherwise specified, VCC = 12V, @TA = +25°C):

  • Figures 4 & 5: Turn-on Propagation Delay vs. Supply Voltage / Temperature: Shows how turn-on delay for both high-side and low-side drivers varies with supply voltage and temperature.
  • Figures 6 & 7: Turn-off Propagation Delay vs. Supply Voltage / Temperature: Displays the variation of turn-off delay for both drivers with supply voltage and temperature.
  • Figures 8 & 9: Rise Time vs. Supply Voltage / Temperature: Illustrates the rise time of the output signals as a function of supply voltage and temperature.
  • Figures 10 & 11: Fall Time vs. Supply Voltage / Temperature: Shows the fall time of the output signals across different supply voltages and temperatures.
  • Figures 12 & 13: Quiescent Current vs. Supply Voltage / Temperature: Depicts the quiescent supply currents (ICCQ and IBSQ) for both VCC and VBS supplies as they change with supply voltage and temperature.
  • Figures 14 & 15: Delay Matching vs. Supply Voltage / Temperature: Illustrates the delay matching (tDM(ON) and tDM(OFF)) between the high-side and low-side outputs as a function of supply voltage and temperature.
  • Figures 16 & 17: Output Source Current vs. Supply Voltage / Temperature: Shows the output source current capability (IO+) for high-side and low-side drivers versus supply voltage and temperature.
  • Figures 18 & 19: Output Sink Current vs. Supply Voltage / Temperature: Displays the output sink current capability (IO-) for high-side and low-side drivers versus supply voltage and temperature.
  • Figures 20 & 21: Logic 1 Input Voltage vs. Supply Voltage / Temperature: Plots the threshold voltage for a logic '1' input (VIH) for both high-side and low-side logic inputs against supply voltage and temperature.
  • Figures 22 & 23: Logic 0 Input Voltage vs. Supply Voltage / Temperature: Shows the threshold voltage for a logic '0' input (VIL) for both high-side and low-side logic inputs against supply voltage and temperature.
  • Figure 24: VCC UVLO vs. Temperature: Illustrates the VCC Undervoltage Lockout thresholds (positive and negative going) as a function of temperature.
  • Figure 25: Offset Supply Leakage Current vs. Temperature: Depicts the offset supply leakage current (ILK) across the operating temperature range.

Important Notice

Diodes Incorporated (Diodes) and its subsidiaries make no warranty of any kind, express or implied, with regards to any information contained in this document, including, but not limited to, the implied warranties of merchantability, fitness for a particular purpose or non-infringement of third party intellectual property rights (and their equivalents under the laws of any jurisdiction).

The information contained herein is for informational purposes only and is provided only to illustrate the operation of Diodes' products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes' products. Diodes' products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes' products for their intended applications, (c) ensuring their applications, which incorporate Diodes' products, comply with the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications.

Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes' websites, harmless against all damages and liabilities.

Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes' website) under this document.

Diodes' products are provided subject to Diodes' Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channels.

Diodes' products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes' products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application.

While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes.

Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use.

This Notice may be periodically updated with the most recent version available at https://www.diodes.com/about/company/terms-and-conditions/important-notice.

The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries. All other trademarks are the property of their respective owners. © 2025 Diodes Incorporated. All Rights Reserved.

PDF preview unavailable. Download the PDF instead.

DGD0507A 適用於 Microsoft 365 的 Microsoft Word

Related Documents

Preview DGD0506A High-Frequency Half-Bridge Gate Driver Datasheet | Diodes Incorporated
Technical datasheet for the Diodes Incorporated DGD0506A, a high-frequency half-bridge gate driver IC with programmable deadtime. Features include 50V high-side driver, 1.5A source/2.0A sink capability, and wide operating temperature range.
Preview DGD05473 High-Frequency High-Side and Low-Side Gate Driver Datasheet
Diodes Incorporated DGD05473 is a 50V floating high-side gate driver capable of driving n-channel MOSFETs. This datasheet provides detailed electrical characteristics, typical performance, and application information for the DGD05473.
Preview DGD0597FUQ High-Frequency High-Side and Low-Side Gate Driver
Diodes Incorporated's DGD0597FUQ is a high-frequency, high-side and low-side gate driver for n-channel MOSFETs in half-bridge configurations. It features a 40V floating high-side driver, 5V gate drive, TTL/CMOS compatible inputs, and fast propagation delays.
Preview Diodes Incorporated MOSFETs: Ultra-High Performance Solutions for Automotive, Industrial, and Consumer Applications
Explore Diodes Incorporated's extensive portfolio of ultra-high performance MOSFETs, including Silicon Carbide (SiC) and Silicon MOSFETs. Discover advanced packaging technologies, automotive-grade reliability (AEC-Q101, IATF 16949), and solutions for DC-DC conversion, motor control, automotive electronics, and more. This catalog details product specifications, package types, and application focuses.
Preview Diodes ZXTN2018F: 60V NPN Low Saturation Transistor Datasheet
Technical datasheet for the Diodes ZXTN2018F, a 60V NPN low saturation transistor in a SOT23 package. Key features include 5A continuous collector current, low VCE(sat), and high power dissipation. Suitable for motor drives, gate driving, and relay applications.
Preview DXTN78030DFG: 30V NPN Ultra-Low VCE(sat) Transistor in PowerDI3333-8
Datasheet for the DXTN78030DFG, a 30V NPN transistor with ultra-low VCE(sat) in a PowerDI3333-8 package. Features include high current capability, thermal efficiency, and suitability for high-temperature environments. Applications include MOSFET/IGBT gate drivers, load switches, and DC-DC converters.
Preview DMTH4001STLW: 40V 175°C N-Channel MOSFET Datasheet by Diodes Incorporated
Detailed datasheet for the Diodes Incorporated DMTH4001STLW, a 40V, 175°C N-Channel Enhancement Mode MOSFET in a POWERDI1012-8 package. Features low RDS(ON) and high efficiency for power management applications.
Preview DMTH42M5SPSW: 40V 175°C N-Channel Enhancement Mode MOSFET Datasheet by Diodes Incorporated
Technical datasheet for the Diodes Incorporated DMTH42M5SPSW, a 40V, 175°C N-Channel Enhancement Mode Power MOSFET. Details include electrical characteristics, maximum ratings, thermal performance, and application information for high-efficiency power management.