DXTN80060DFG: 60V NPN Ultra-Low VCE(sat) Transistor in PowerDI3333-8
Brand: Diodes Incorporated
Product Type: NPN Transistor
Features
- BVCEO > 60V
- BVEBO > 8V
- Continuous Current Ic to 6.5A
- Peak Pulse Current ICM to 15A
- Ultra-Low Saturation Voltage VCE(sat) < 40mV @ 1A
- High Current RCE(sat) = 16mΩ Typical
- Small Form Factor Thermally Efficient Package
- Enables Higher Density End Products
- Wettable Flank for Improved Optical Inspection
- Rated to +175°C – Ideal for High-Temperature Environments
- Complementary PNP Type: DXTP80060DFG
- Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. "Green" Device (Note 3)
- An automotive-compliant part is available under a separate datasheet (DXTN80060DFGQ)
Mechanical Data
- Package: PowerDI®3333-8
- Package Material: Molded Plastic, "Green" Molding Compound. UL Flammability Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish - Matte Tin. Solderable per MIL-STD-202, Method 208
- Weight: 0.03 grams (Approximate)
Package Diagram: The PowerDI3333-8/SWP (Type UX) package is shown from Top View, Bottom View, and as a Device Symbol. The Top View shows a rectangular package with multiple terminals. The Bottom View shows the arrangement of the Emitter (E), Base (B), and Collector (C) terminals. The Device Symbol is a standard NPN bipolar junction transistor symbol with terminals labeled C, B, and E.
Applications
- MOSFET & IGBT gate drivers
- Load switches
- Low-voltage regulations
- DC to DC converters
- Motors, solenoids, relays and actuator drivers control
Ordering Information
| Orderable Part Number | Package | Marking | Reel Size (inches) | Tape Width (mm) | Packing Qty. | Carrier |
|---|---|---|---|---|---|---|
| DXTN80060DFG-7 | PowerDI3333-8/SWP (Type UX) | 2W7 | 7 | 12 | 2,000 | Reel |
Notes:
- 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
- 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free.
- 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
- 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
The marking on the PowerDI3333-8/SWP (Type UX) package includes a product type marking code "2W7" and a date code marking "YYWW".
- 2W7 = Product Type Marking Code
- YYWW = Date Code Marking
- YY = Last Two Digits of Year (e.g., 25 = 2025)
- WW = Week Code (01 to 53)
Absolute Maximum Ratings
(@TA = +25°C, unless otherwise specified.)
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 100 | V |
| Collector-Emitter Voltage | VCEO | 60 | V |
| Emitter-Base Voltage | VEBO | 8 | V |
| Continuous Collector Current (Note 5) | IC | 4 | A |
| Continuous Collector Current (Note 7) | IC | 6.5 | A |
| Peak Pulse Current | ICM | 15 | A |
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Power Dissipation (Note 5) | PD | 900 | mW |
| Power Dissipation (Note 6) | 1.6 | W | |
| Power Dissipation (Note 7) | 2.4 | W | |
| Thermal Resistance, Junction to Ambient (Note 5) | ROJA | 140 | °C/W |
| Thermal Resistance, Junction to Ambient (Note 6) | 92 | °C/W | |
| Thermal Resistance, Junction to Ambient (Note 7) | 62.5 | °C/W | |
| Thermal Resistance, Junction to Case (Note 7) | ReJC | 6.5 | °C/W |
| Thermal Resistance, Junction to Lead (Note 8) | ReJL | 4.2 | °C/W |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +175 | °C |
Notes:
- 5. For a device mounted with the collector tab on MRP FR4-PCB; device is measured under still air conditions whilst operating in a steady state.
- 6. Same as Note 5, except the device is mounted on 15mm x 15mm 2oz copper.
- 7. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.
- 8. Thermal resistance from junction to solder-point (at the collector tab).
ESD Ratings
(Note 9)
| Characteristic | Symbol | Value | Unit | JEDEC Class |
|---|---|---|---|---|
| Electrostatic Discharge - Human Body Model | ESD HBM | 4,000 | V | 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | C |
| Electrostatic Discharge - Charged Device Model | ESD CDM | 1,000 | V | IV |
Note:
- 9. Refer to JEDEC specifications JESD22-A114, JESD22-A115 and JESD22-C101.
Thermal Characteristics and Derating Information
Fig 1. Safe Operating Area: This graph shows the Collector Current (Ic) in Amperes versus Collector-Emitter Voltage (VCE) in Volts. Curves are shown for DC, 1s, 100ms, 10ms, 1ms, and 100µs pulse widths, with a condition of Tamb = 25°C and the device mounted on a 25mm x 25mm 2oz FR4 PCB.
Fig 2. Transient Thermal Impedance: This graph shows Thermal Resistance (°C/W) versus Pulse Width (s). Curves are shown for different duty cycles (D=0.5, D=0.2, D=0.1, D=0.05) and Single Pulse, with Tamb = 25°C. Two PCB mounting conditions are indicated: MRP 2oz FR4 and 25mm x 25mm 2oz FR4.
Fig 3. Transient Thermal Impedance: Similar to Fig 2, this graph shows Thermal Resistance (°C/W) versus Pulse Width (s) for different duty cycles and Single Pulse, with Tamb = 25°C. It also shows curves for MRP 2oz FR4 and 25mm x 25mm 2oz FR4 PCB mounting.
Fig 4. Pulse Power Dissipation: This graph shows Maximum Power Dissipation (W) versus Pulse Width (s). Curves are shown for Single Pulse and for a 25mm x 25mm 2oz FR4 PCB mounting, with Tamb = 25°C. A curve for MRP 2oz FR4 is also shown.
Fig 5. Derating Curve: This graph shows Maximum Power Dissipation (W) versus Temperature (°C). Curves are shown for 25mm x 25mm 2oz FR4 and MRP 2oz FR4 PCB mounting conditions.
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | -- | -- | 100 | V | IC = 100μA |
| Collector-Emitter Breakdown Voltage (Note 10) | BVCEO | -- | -- | 60 | V | IC = 10mA |
| Emitter-Collector Breakdown Voltage | BVECO | -- | -- | 5 | V | IE = 100μA |
| Emitter-Base Breakdown Voltage | BVEBO | -- | -- | 8 | V | IE = 100μA |
| Collector Cutoff Current | ICBO | -- | -- | 100 | nA | VCB = 100V |
| Collector Cutoff Current | ICES | -- | -- | 10 | μA | VCB = 100V, TA = +125°C |
| Collector Cutoff Current | ICES | -- | -- | 300 | nA | VCE = 48V |
| Emitter Cutoff Current | IEBO | -- | -- | 50 | nA | VEB = 7V |
| Collector-Emitter Saturation Voltage (Note 10) | VCE(sat) | -- | 50 | -- | mV | IC = 100mA, IB = 1mA |
| -- | 45 | 80 | mV | IC = 1A, IB = 20mA | ||
| -- | 22 | 40 | mV | IC = 1A, IB = 100mA | ||
| -- | 70 | 120 | mV | IC = 2A, IB = 40mA | ||
| -- | 75 | 130 | mV | IC = 4A, IB = 200mA | ||
| -- | 100 | 200 | mV | IC = 6.5A, IB = 650mA | ||
| Base-Emitter Saturation Voltage (Note 10) | VBE(sat) | -- | 880 | 1,000 | mV | IC = 4A, IB = 200mA |
| -- | 980 | 1,100 | mV | IC = 6.5A, IB = 650mA | ||
| Base-Emitter Turn-On Voltage (Note 10) | VBE(on) | -- | 750 | 850 | mV | IC = 4A, VCE = 2V |
| -- | 800 | 950 | mV | IC = 6.5A, VCE = 2V | ||
| DC Current Gain (Note 10) | hFE | 250 | 370 | -- | -- | IC = 10mA, VCE = 2V |
| 300 | 370 | 550 | -- | IC = 100mA, VCE = 2V | ||
| 260 | 350 | -- | -- | IC = 1A, VCE = 2V | ||
| -- | 250 | 335 | -- | IC = 2A, VCE = 2V | ||
| -- | 140 | 250 | -- | IC = 4A, VCE = 2V | ||
| -- | 35 | 110 | -- | IC = 6.5A, VCE = 2V | ||
| Input Capacitance | Cibo | -- | 620 | -- | pF | VEB = 0.5V, f = 1MHz |
| Output Capacitance | Cobo | -- | 30 | -- | pF | VCB = 10V, f = 1MHz |
| Current Gain-Bandwidth Product | fT | 100 | 140 | -- | MHz | VCE = 10V, IC = 100mA |
| Turn-On Time | td | -- | 14 | -- | ns | f = 50MHz |
| tr | -- | 80 | -- | ns | VCC = 10V, IC = 4A | |
| ts | -- | 375 | -- | ns | IB1 = -IB2 = 400mA | |
| Turn-Off Time | tf | -- | 28 | -- | ns |
Note:
- 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Timing Waveform Diagram: The diagram shows idealized input (pulse) and output (Ic) waveforms against time (t). It illustrates the timing parameters: ton (turn-on time), ts (storage time), and tf (turn-off time), along with IBon (100%) and Ic (100%) levels.
Typical Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Fig 7. hFE v Ic: This graph plots DC Current Gain (hFE) versus Collector Current (Ic) in Amperes. Multiple curves are shown for different ambient temperatures (-55°C, 25°C, 85°C, 150°C) under the condition VCE = 2V.
Fig 8. VCE(sat) v Ic: This graph plots Collector-Emitter Saturation Voltage (VCE(sat)) in Volts versus Collector Current (Ic) in Amperes. Multiple curves are shown for different ambient temperatures (-55°C, 25°C, 85°C, 150°C) under the condition VCE = 2V.
Fig 9. VCE(sat) v Ic: This graph plots Collector-Emitter Saturation Voltage (VCE(sat)) in Volts versus Collector Current (Ic) in Amperes. Curves are shown for different collector-to-base current ratios (Ic/Ib = 10, 20, 50) at Tamb = 25°C.
Fig 10. VBE(on) v Ic: This graph plots Base-Emitter On Voltage (VBE(on)) in Volts versus Collector Current (Ic) in Amperes. Multiple curves are shown for different ambient temperatures (-55°C, 25°C, 85°C, 150°C) under the condition VCE = 2V.
Fig 11. VBE(sat) v Ic: This graph plots Base-Emitter Saturation Voltage (VBE(sat)) in Volts versus Collector Current (Ic) in Amperes. Curves are shown for different collector-to-base current ratios (Ic/Ib = 20) and ambient temperatures (-55°C, 25°C, 85°C, 150°C).
Fig 12. Typical Junction Capacitance: This graph plots Capacitance (pF) versus Reverse Voltage (V). Curves for Cibo (Input Capacitance) and Cobo (Output Capacitance) are shown, with a frequency of f=1MHz.
Fig 13. RCE(sat) v Ic: This graph plots RCE(sat) in mΩ versus Collector Current (Ic) in Amperes. Curves are shown for different collector-to-base current ratios (Ic/Ib = 10, 20, 50) at Tamb = 25°C.
Fig 14. RCE(sat) v Tamb: This graph plots RCE(sat) in mΩ versus Ambient Temperature (°C). Curves are shown for different collector-to-base current ratios (Ic/Ib = 10, 20, 50) under the condition ICE = 4A.
Fig 15. Switching Performance: This graph plots Time (ns) versus Collector Current (Ic) in Amperes. It illustrates the switching times (td, tr, ts, tf) for a condition of Ic/Ib = 10 and Vcc = 10V.
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
Package Diagram: The diagram shows the PowerDI3333-8/SWP (Type UX) package with dimensions labeled A, A1, b, c, D, D1, D2, E, E1, E2, E3, E4, e, k, L, and θ. Detail A highlights a specific corner feature. An inset shows a magnified view of a small feature with dimensions 0.050 and 0.150.
| Dim | Min | Max | Typ |
|---|---|---|---|
| A | 0.75 | 0.85 | 0.80 |
| A1 | 0.00 | 0.05 | -- |
| b | 0.25 | 0.40 | 0.32 |
| c | 0.10 | 0.25 | 0.15 |
| D | 3.20 | 3.40 | 3.30 |
| D1 | 2.95 | 3.15 | 3.05 |
| D2 | 2.30 | 2.70 | 2.50 |
| E | 3.20 | 3.40 | 3.30 |
| E1 | 2.95 | 3.15 | 3.05 |
| E2 | 1.60 | 2.00 | 1.80 |
| E3 | 0.95 | 1.35 | 1.15 |
| E4 | 0.10 | 0.30 | 0.20 |
| e | -- | -- | 0.65 |
| k | 0.50 | 0.90 | 0.70 |
| L | 0.30 | 0.50 | 0.40 |
| θ | 0° | 12° | 10° |
All Dimensions in mm
Note: 11. Side wall tin plated package for wettable flanks in AOI.
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
Pad Layout Diagram: The diagram shows the recommended PCB pad layout for the PowerDI3333-8/SWP (Type UX) package. It includes dimensions labeled X, X1, X2, X3, X4, Y, Y1, Y2, Y3, Y4, Y5, Y6, and C.
| Dimensions | Value (in mm) |
|---|---|
| C | 0.650 |
| X | 0.420 |
| X1 | 0.420 |
| X2 | 0.230 |
| X3 | 2.600 |
| X4 | 3.500 |
| Y | 0.700 |
| Y1 | 0.550 |
| Y2 | 1.650 |
| Y3 | 0.600 |
| Y4 | 2.450 |
| Y5 | 0.400 |
| Y6 | 3.700 |
Important Notice
- 1. DIODES INCORPORATED (Diodes) and its subsidiaries make no warranty of any kind, express or implied, with regards to any information contained in this document, including, but not limited to, the implied warranties of MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE or NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (and their equivalents under the laws of any jurisdiction).
- 2. The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes' products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes' products. Diodes' products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes' products for their intended applications, (c) ensuring their applications, which incorporate Diodes' products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications.
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