DXTN78060DFGQ: 60V NPN Ultra-Low VCE(sat) Transistor
Brand: Diodes Incorporated
Product Type: NPN Transistor
Package: PowerDI3333-8
Features
- BVCEO > 60V
- BVEBO > 8V
- Continuous Current Ic to 6A
- Peak Pulse Current ICM to 12A
- Ultra-Low Saturation Voltage VCE(sat) < 45mV @ 1A
- High Current RCE(sat) = 23mΩ Typical
- Small Form Factor Thermally Efficient Package Enables Higher Density End Products
- Wettable Flank for Improved Optical Inspection
- Rated to +175°C – Ideal for High-Temperature Environments
- Complementary PNP Type: DXTP78060DFGQ
- Lead-Free Finish; RoHS Compliant
- Halogen and Antimony Free. "Green" Device
- Suitable for automotive applications requiring specific change control; AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.
Mechanical Data
- Package: PowerDI®3333-8
- Molding Compound: Molded Plastic. "Green" Molding Compound UL Flammability Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish - Matte Tin. Solderable per MIL-STD-202, Method 208
- Weight: 0.03 grams (Approximate)
Applications
- MOSFET & IGBT gate drivers
- Load switches
- Low-voltage regulation
- DC to DC converters
- Motor, solenoid, relay and actuator drivers control
Ordering Information
| Orderable Part Number | Package | Marking | Reel Size (inches) | Tape Width (mm) | Qty. Carrier |
|---|---|---|---|---|---|
| DXTN78060DFGQ-7 | PowerDI3333-8/SWP (Type UX) | 2Y0 | 7 | 12 | 2,000 Reel |
Marking Information
The marking on the device consists of a product type marking code and a date code marking.
- Product Type Marking Code: 2Y0
- Date Code Marking: YYWW (YY = Last Two Digits of Year, WW = Week Code)
Absolute Maximum Ratings
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 100 | V | IC = 100μA |
| Collector-Emitter Voltage | VCEO | 60 | V | IC = 10mA |
| Emitter-Base Voltage | VEBO | 8 | V | IE = 100μA |
| Continuous Collector Current (Note 5) | IC | 6 | A | |
| Peak Pulse Current | ICM | 12 | A |
Thermal Characteristics
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Power Dissipation (Note 5) | PD | 900 | mW | |
| Power Dissipation (Note 6) | PD | 1.6 | W | |
| Power Dissipation (Note 7) | PD | 2.4 | W | |
| Thermal Resistance, Junction to Ambient (Note 5) | ROJA | 140 | °C/W | |
| Thermal Resistance, Junction to Ambient (Note 6) | ROJA | 92 | °C/W | |
| Thermal Resistance, Junction to Ambient (Note 7) | ROJA | 62.5 | °C/W | |
| Thermal Resistance, Junction to Case (Note 7) | ReJC | 8 | °C/W | |
| Thermal Resistance, Junction to Leads (Note 8) | ReJL | 6.5 | °C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +175 | °C |
ESD Ratings
| Characteristic | Symbol | Value | Unit | JEDEC Class |
|---|---|---|---|---|
| Electrostatic Discharge - Human Body Model | ESD HBM | 4,000 | V | 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | C |
| Electrostatic Discharge - Charged Device Model | ESD CDM | 1,000 | V | IV |
Electrical Characteristics
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage (Note 10) | BVCBO | 100 | V | IC = 100μA | ||
| Collector-Emitter Breakdown Voltage (Note 10) | BVCEO | 60 | V | IC = 10mA | ||
| Emitter-Base Breakdown Voltage | BVEBO | 8 | V | IE = 100μA | ||
| Collector Cut-off Current | ICES | 30 | 300 | nA | VCB = 48V | |
| Collector-Emitter Saturation Voltage (Note 10) | VCE(sat) | 55 | 170 | mV | IC = 1A, IB = 20mA | |
| 85 | 125 | mV | IC = 3A, IB = 150mA | |||
| Base-Emitter Saturation Voltage (Note 10) | VBE(sat) | 870 | 1,000 | mV | IC = 3A, IB = 150mA | |
| Base-Emitter Turn-On Voltage (Note 10) | VBE(on) | 765 | 1,000 | mV | IC = 3A, VCE = 2V | |
| DC Current Gain (Note 10) | hFE | 180 | 290 | IC = 2A, VCE = 2V | ||
| Input Capacitance | Cibo | 350 | pF | VEB = 0.5V, f = 1MHz | ||
| Output Capacitance | Cobo | 18 | pF | VCB = 10V, f = 1MHz | ||
| Current Gain-Bandwidth Product | fT | 150 | 250 | MHz | VCE = 10V, Ic = 100mA, f = 50MHz | |
| Turn-On Time | ton | 75 | ns | VCC = 10V, Ic = 3A, IB1=IB2 = 30mA | ||
| Turn-Off Time | toff | 30 | ns |
Typical Electrical Characteristics
Graphs illustrating typical electrical characteristics are provided, including:
- Figure 7: hFE vs. Ic
- Figure 8: VCE(sat) vs. Ic
- Figure 9: VCE(sat) vs. Ic
- Figure 10: VBE(on) vs. Ic
- Figure 11: VBE(sat) vs. Ic
- Figure 12: Typical Junction Capacitance (Cibo and Cobo vs. Reverse Voltage)
- Figure 13: RCE(sat) vs. Ic
- Figure 14: RCE(sat) vs. TA
- Figure 15: Switching Performance (Time vs. Ic)
Package Outline Dimensions
Detailed dimensions for the PowerDI3333-8 (Type UX) package are provided in millimeters, including parameters such as A, A1, b, c, D, D1, D2, E, E1, E2, E3, E4, e, k, L, and θ. A detail view of the wettable flank is also shown.
Suggested Pad Layout
A suggested pad layout for the PowerDI3333-8 (Type UX) package is provided, with dimensions for X, X1, X2, X3, X4, Y1, Y2, Y3, Y4, Y5, and Y6 in millimeters.
Important Notice
Diodes Incorporated and its subsidiaries provide information without warranty of any kind. Users are responsible for ensuring the suitability of Diodes' products for their applications and for complying with all applicable laws and regulations. Diodes assumes no liability for any application-related information or support. Product information is subject to Diodes' Standard Terms and Conditions of Sale. Diodes' products may not be used in systems where their failure could result in significant injury or death. Unauthorized copying or distribution of this document is prohibited.
