Diodes ZXTN2018F: 60V NPN Low Saturation Transistor

The Diodes ZXTN2018F is a high-performance NPN bipolar transistor designed for various electronic applications. It features a 60V collector-emitter breakdown voltage (BVCEO) and a continuous collector current (Ic) of up to 5A, making it suitable for demanding switching and amplification tasks.

This transistor is housed in a compact SOT23 (Type DN) package, offering excellent thermal performance and ease of integration into printed circuit boards. Its low saturation voltage (VCE(sat) < 45mV @ 1A) and low on-resistance (RCE(sat) = 25mΩ) contribute to efficient power management in circuits.

Key Features

Applications

For detailed technical specifications, electrical characteristics, and application notes, please refer to the official Diodes Incorporated product page.

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