Diodes Incorporated
DXTN78100CFGQ: 100V NPN ULTRA-LOW VCE(sat) TRANSISTOR IN PowerDI3333-8
Key Features
- BVCEO > 100V
- BVEBO > 8V
- Continuous Current IC to 4A
- Peak Pulse Current ICM to 8A
- Ultra-Low Saturation Voltage VCE(sat) < 60mV @ 1A
- High Current RCE(sat) = 32mΩ Typical
- Small Form Factor Thermally Efficient Package Enables Higher Density End Products
- Wettable Flank for Improved Optical Inspection
- Rated to +175°C – Ideal for High-Temperature Environments
- Complementary PNP Type: DXTP78100CFGQ
- Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. "Green" Device (Note 3)
- Suitable for automotive applications requiring specific change control; AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. [Link: https://www.diodes.com/quality/product-definitions/]
Mechanical Data
- Package: PowerDI®3333-8
- Package Material: Molded Plastic. "Green" Molding Compound UL Flammability Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish - Matte Tin. Solderable per MIL-STD-202, Method 208
- Weight: 0.03 grams (Approximate)
Applications
- MOSFET & IGBT gate drivers
- Load switches
- Low-voltage regulation
- DC to DC converters
- Motor, solenoid, relay and actuator drivers control
Device Diagram
Top View: Shows pins labeled B (Base) and E (Emitter). Pin 1 is indicated.
Bottom View: Shows pins labeled B (Base) and E (Emitter).
Device Symbol: Standard NPN transistor symbol with Base (B), Collector (C), and Emitter (E) terminals.
Ordering Information
| Orderable Part Number | Package | Marking | Reel Size (inches) | Tape Width (mm) | Qty. | Carrier |
| DXTN78100CFGQ-7 | PowerDI3333-8/SWP (Type UX) | 2Y1 | 7 | 12 | 2,000 | Reel |
Notes:
- EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
- See [Link: https://www.diodes.com/quality/lead-free/] for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free.
- Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + CI) and <1000ppm antimony compounds.
- For packaging details, go to [Link: https://www.diodes.com/design/support/packaging/diodes-packaging/].
Marking Information
The package marking includes "2Y1" as the Product Type Marking Code and "YYWW" for the Date Code Marking, where YY represents the last two digits of the year and WW represents the week code (01 to 53).
Absolute Maximum Ratings
| Characteristic | Symbol | Value | Unit | Test Condition |
| Collector-Base Voltage | VCBO | 150 | V | |
| Collector-Emitter Voltage | VCEO | 100 | V | |
| Emitter-Base Voltage | VEBO | 8 | V | |
| Continuous Collector Current (Note 5) | IC | 2 | A | |
| Continuous Collector Current (Note 7) | IC | 4 | A | |
| Peak Pulse Current | ICM | 8 | A |
Thermal Characteristics
| Characteristic | Symbol | Value | Unit | Notes |
| Power Dissipation (Note 5) | PD | 900 | mW | |
| Power Dissipation (Note 6) | PD | 1.6 | W | |
| Power Dissipation (Note 7) | PD | 2.4 | W | |
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA | 140 | °C/W | |
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | 92 | °C/W | |
| Thermal Resistance, Junction to Ambient (Note 7) | RθJA | 62.5 | °C/W | |
| Thermal Resistance, Junction to Case (Note 7) | RθJC | 8 | °C/W | |
| Thermal Resistance, Junction to Lead (Note 8) | RθJL | 6.5 | °C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +175 | °C |
ESD Ratings
| Characteristic | Symbol | Value | Unit | JEDEC Class |
| Electrostatic Discharge - Human Body Model | ESD HBM | 4,000 | V | 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | C |
| Electrostatic Discharge - Charged Device Model | ESD CDM | 1,000 | V | IV |
Notes:
- 5. For a device mounted with the collector tab on MRP FR4-PCB; device is measured under still air conditions whilst operating in a steady state.
- 6. Same as Note 5, except the device is mounted on 15mm x 15mm 2oz copper.
- 7. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.
- 8. Thermal resistance from junction to solder-point (at the collector tab).
- 9. Refer to JEDEC specification JESD22-A114, JESD22-A115 and JESD22-C101.
Thermal Characteristics and Derating Information
Figure 1: Safe Operating Area
Graph showing Collector Current (A) on the x-axis versus Collector-Emitter Voltage (V) on the y-axis. Curves are shown for different pulse widths (DC, 1s, 100ms, 10ms, 1ms, 100µs) and mounting conditions (25mm x 25mm 2oz FR4).
Figure 2: Transient Thermal Impedance
Graph showing Thermal Resistance (°C/W) on the y-axis versus Pulse Width (s) on the x-axis. Curves are shown for different duty cycles (D=0.5, D=0.2, D=0.05, D=0.1, Single Pulse) and mounting conditions (MRP 2oz FR4, 25mm x 25mm 2oz FR4).
Figure 3: Transient Thermal Impedance
Similar to Figure 2, showing Thermal Resistance (°C/W) on the y-axis versus Pulse Width (s) on the x-axis, with different duty cycles and mounting conditions.
Figure 4: Pulse Power Dissipation
Graph showing Max Power Dissipation (W) on the y-axis versus Pulse Width (s) on the x-axis. Curves are shown for different mounting conditions (MRP 2oz FR4, 25mm x 25mm 2oz FR4) and pulse types (Single Pulse).
Figure 5: Derating Curve
Graph showing Max Power Dissipation (W) on the y-axis versus Temperature (°C) on the x-axis. Curves are shown for different mounting conditions (MRP 2oz FR4, 25mm x 25mm 2oz FR4).
Electrical Characteristics
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition | |
| Collector-Base Breakdown Voltage | BVCBO | 150 | V | IC = 100µA | |||
| Collector-Emitter Breakdown Voltage (Note 10) | BVCEO | 100 | V | IC = 10mA | |||
| Emitter-Collector Breakdown Voltage | BVECO | 5 | V | IE = 100µA | |||
| Emitter-Base Breakdown Voltage | BVEBO | 8 | V | IE = 100µA | |||
| Collector Cut-off Current | ICBO | 100 | nA | VCB = 150V | |||
| Collector Cut-off Current | ICES | 300 | nA | VCB = 150V, TA = +125°C | |||
| Emitter Cut-off Current | IEBO | 50 | nA | VEB = 7V | |||
| Collector-Emitter Saturation Voltage (Note 10) | VCE(sat) | 80 | mV | IC = 100mA, IB = 1mA | |||
| Collector-Emitter Saturation Voltage (Note 10) | VCE(sat) | 100 | 150 | mV | IC = 1A, IB = 20mA | ||
| Collector-Emitter Saturation Voltage (Note 10) | VCE(sat) | 40 | 60 | mV | IC = 1A, IB = 100mA | ||
| Collector-Emitter Saturation Voltage (Note 10) | VCE(sat) | 70 | 120 | mV | IC = 2A, IB = 200mA | ||
| Collector-Emitter Saturation Voltage (Note 10) | VCE(sat) | 130 | 340 | mV | IC = 4A, IB = 400mA | ||
| Base-Emitter Saturation Voltage (Note 10) | VBE(sat) | 870 | 1,000 | mV | IC = 2A, IB = 200mA | ||
| Base-Emitter Saturation Voltage (Note 10) | VBE(sat) | 950 | 1,100 | mV | IC = 4A, IB = 400mA | ||
| Base-Emitter Turn-On Voltage (Note 10) | VBE(on) | 770 | 850 | mV | IC = 2A, VCE = 2V | ||
| Base-Emitter Turn-On Voltage (Note 10) | VBE(on) | 850 | 950 | mV | IC = 4A, VCE = 2V | ||
| DC Current Gain (Note 10) | hFE | 200 | 320 | IC = 10mA, VCE = 2V | |||
| DC Current Gain (Note 10) | hFE | 250 | 320 | 420 | IC = 100mA, VCE = 2V | ||
| DC Current Gain (Note 10) | hFE | 210 | 300 | IC = 500mA, VCE = 2V | |||
| DC Current Gain (Note 10) | hFE | 140 | 200 | IC = 1A, VCE = 2V | |||
| DC Current Gain (Note 10) | hFE | 35 | 80 | IC = 2A, VCE = 2V | |||
| DC Current Gain (Note 10) | hFE | 10 | 30 | IC = 4A, VCE = 2V | |||
| Input Capacitance | Cibo | 360 | pF | VEB = 0.5V, f = 1MHz | |||
| Output Capacitance | Cobo | 12.5 | pF | VCB = 10V, f = 1MHz | |||
| Current Gain-Bandwidth Product | fT | 150 | 210 | MHz | VCE = 10V, IC = 100mA, f = 50MHz | ||
| Turn-On Time | td | 12.5 | ns | VCC = 10V, IC = 2A, IB1=-IB2 = 200mA | |||
| Turn-On Time | tr | 145 | ns | ||||
| Turn-Off Time | ts | 430 | ns | ||||
| Turn-Off Time | tf | 83 | ns |
Note:
10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Figure 6: Timing Waveform
Diagram illustrating switching performance with waveforms for Base Current (IB) and Collector Current (IC) over time, showing turn-on time (ton), storage time (ts), and turn-off time (tf).
Typical Electrical Characteristics
Figure 7: hFE vs Ic
Graph showing DC Current Gain (hFE) on the y-axis versus Collector Current (A) on the x-axis, with curves for different temperatures (-55°C, 25°C, 85°C, 150°C) and VCE = 2V.
Figure 8: VCE(sat) vs Ic
Graph showing Collector-Emitter Saturation Voltage (VCE(sat)) on the y-axis versus Collector Current (A) on the x-axis, with curves for different temperatures and IB/IC ratios.
Figure 9: VCE(sat) vs Ic
Graph showing Collector-Emitter Saturation Voltage (VCE(sat)) on the y-axis versus Collector Current (A) on the x-axis, with curves for different temperatures and IB/IC ratios.
Figure 10: VBE(on) vs Ic
Graph showing Base-Emitter Turn-On Voltage (VBE(on)) on the y-axis versus Collector Current (A) on the x-axis, with curves for different temperatures.
Figure 11: VBE(sat) vs Ic
Graph showing Base-Emitter Saturation Voltage (VBE(sat)) on the y-axis versus Collector Current (A) on the x-axis, with curves for different temperatures.
Figure 12: Typical Junction Capacitance
Graph showing Capacitance (pF) on the y-axis versus Reverse Voltage (V) on the x-axis, showing Cibo and Cobo capacitance values.
Figure 13: RCE(sat) vs Ic
Graph showing RCE(sat) (mOhms) on the y-axis versus Collector Current (A) on the x-axis, with curves for different IC/IB ratios and TA = 25°C.
Figure 14: RCE(sat) vs TA
Graph showing RCE(sat) (mOhms) on the y-axis versus Ambient Temperature (°C) on the x-axis, with curves for different IC/IB ratios.
Figure 15: Switching Performance
Graph showing Time (ns) on the y-axis versus Collector Current (A) on the x-axis, illustrating switching times (td, tr, ts, tf) for specific test conditions.
Package Outline Dimensions
Dimensions for the PowerDI3333-8/SWP (Type UX) package. Please refer to [Link: http://www.diodes.com/package-outlines.html] for the latest version.
| Dim | Min | Max | Typ |
| A | 0.75 | 0.85 | 0.80 |
| A1 | 0.00 | 0.05 | |
| b | 0.25 | 0.40 | 0.32 |
| c | 0.10 | 0.25 | 0.15 |
| D | 3.20 | 3.40 | 3.30 |
| D1 | 2.95 | 3.15 | 3.05 |
| D2 | 2.30 | 2.70 | 2.50 |
| E | 3.20 | 3.40 | 3.30 |
| E1 | 2.95 | 3.15 | 3.05 |
| E2 | 1.60 | 2.00 | 1.80 |
| E3 | 0.95 | 1.35 | 1.15 |
| E4 | 0.10 | 0.30 | 0.20 |
| e | 0.65 | ||
| k | 0.50 | 0.90 | 0.70 |
| L | 0.30 | 0.50 | 0.40 |
| θ | 0° | 12° | 10° |
All Dimensions in mm
Suggested Pad Layout
Recommended pad layout for the PowerDI3333-8/SWP (Type UX) package. Please refer to [Link: http://www.diodes.com/package-outlines.html] for the latest version.
| Dimensions | Value (in mm) |
| C | 0.650 |
| X | 0.420 |
| X1 | 0.420 |
| X2 | 0.230 |
| X3 | 2.600 |
| X4 | 3.500 |
| Y | 0.700 |
| Y1 | 0.550 |
| Y2 | 1.650 |
| Y3 | 0.600 |
| Y4 | 2.450 |
| Y5 | 0.400 |
| Y6 | 3.700 |
Notes:
- 11. For high-voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device terminals and PCB tracking.
- 12. Side wall tin plated package for wettable flanks in AOI.
Important Notice
Diodes Incorporated and its subsidiaries make no warranty of any kind, express or implied, regarding the information contained in this document. The information is for informational purposes only and Diodes assumes no liability arising out of the application or use of this document or any product described herein. Products may be covered by patents. Diodes' products are provided subject to Diodes' Standard Terms and Conditions of Sale. Products and technology may not be used in prohibited applications. While efforts have been made to ensure accuracy, the document may contain inaccuracies. Diodes reserves the right to make changes without further notice. The English version of this document is the final and determinative format. Unauthorized copying or distribution is prohibited. For the latest version of the Important Notice, please visit [Link: https://www.diodes.com/about/company/terms-and-conditions/important-notice].
