S1U50700A(LS) Sensitive Gate Silicon Controlled Rectifiers
Status: OBSOLETE - PART DISCONTINUED
Manufacturer: Diodes Incorporated
Product Line: Lite-On Semiconductor
Contact: THE S1U50700A(LS) IS OBSOLETE. PLEASE CONTACT US.
Product Overview
The S1U50700A(LS) is a sensitive gate silicon controlled rectifier (SCR) designed for reverse blocking applications. It offers a blocking voltage of up to 700 Volts and an on-state current rating of 0.8 Amperes RMS at a case temperature of 80°C.
Features
- Sensitive gate allows triggering by microcontrollers and other logic circuits.
- Blocking voltage up to 700 Volts.
- On-state current rating of 0.8 Amperes RMS at Tc=80°C (180° conduction).
- High surge current capability of 10 Amperes.
- Minimum and maximum values for IGT, VGT, and IH are specified for ease of design.
- Immunity to dv/dt of 20 V/msec minimum at 110°C.
- Glass-passivated surface for reliability and uniformity.
- [Pb-Free] package.
- Lead-free finish; RoHS Compliant (Notes 1 & 2).
- Halogen and Antimony Free. [Green] Device (Note 3).
- For automotive applications requiring specific change control (e.g., AEC-Q100/101/104/200 qualification, PPAP capable, IATF 16949 certified facilities), contact Diodes representative.
- More information on quality and definitions: https://www.diodes.com/quality/product-definitions/
Mechanical Data
- Package: TO-92 (TO-226AA)
- Package Material: Molded Plastic
- Terminals: Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208
- Weight: 0.21 grams (Approximate)
TO-92 Package Dimensions
The TO-92 package is a standard three-lead semiconductor package with specific dimensions labeled A through I, provided in millimeters. Pin assignments are: 1-Cathode, 2-Gate, 3-Anode.
| Dimension | Min. | Max. |
|---|---|---|
| A | 4.45 | 4.70 |
| B | 4.32 | 5.33 |
| C | 3.18 | 4.19 |
| D | 1.15 | 1.39 |
| E | 2.42 | 2.66 |
| F | 12.7 | - |
| G | 2.04 | 2.66 |
| I | 3.43 | - |
Pin Assignment:
- 1: Cathode
- 2: Gate
- 3: Anode
Absolute Maximum Ratings
| Characteristics | Symbol | Value | Unit |
|---|---|---|---|
| Peak Repetitive Off-State Voltage (Note 4) (TJ = -40 to 125°C, Sine Wave, 50 to 60Hz; Gate Open) | VDRM | 700 | V |
| On-State RMS Current (TC = 80°C) 180° Conduction Angles | IT(RMS) | 1.0 | A |
| Peak Non-Repetitive Surge Current TA=25°C (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C) | ITSM | 10 | A |
| Circuit Fusing Consideration (t = 8.3ms) | I²t | 0.415 | A²s |
| Forward Peak Gate Power (TA = 25°C, Pulse Width ≤1.0 µs) | PGM | 0.1 | W |
| Forward Average Gate Power (TA = 25°C, t = 8.3 ms) | PG(AV) | 0.1 | W |
| Forward Peak Gate Current (TA = 25°C, Pulse Width≤1.0 µs) | IGM | 1.0 | A |
| Reverse Peak Gate Voltage (TA = 25°C, Pulse Width ≤1.0 ms) | VGRM | 5 | V |
| Operating Junction Temperature Range @ Rate VRRM and VDRM | TJ | -40 to +110 | °C |
| Storage Temperature Range | TSTG | -40 to +150 | °C |
Notes:
- EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
- See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free.
- Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
- VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Thermal Characteristics
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Thermal Resistance - Junction to Case | RthJC | 75 | °C/W |
| Junction to Ambient | RthJA | 150 | °C/W |
| Maximum Lead Temperature for Soldering Purposes 1/16" from Case for 10 Seconds | TL | 260 | °C |
Electrical Characteristics
Off Characteristics
| Characteristics | Symbol | Temperature | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Peak Repetitive Forward or Reverse Blocking Current (Note 5) (VD = Rated VDRM and VRRM; RGK = 1k Ohms) | IDRM / IRRM | TJ = 25°C | - | - | 10 | µA |
| TJ = 125°C | - | - | 100 | µA |
On Characteristics
| Characteristics | Symbol | Temperature | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Peak Forward On-State Voltage @TA=25°C (ITM=± 3.0A Peak, Pulse Width≤1.0 ms, Duty Cycle ≤1%) | VTM | TJ= 25°C | - | 1.2 | 1.7 | V |
| Gate Trigger Current (VAK = 7.0 Vdc; RL = 100 Ohms) | IGT | TJ= 25°C | - | 0.5 | 5.0 | µA |
| Holding Current (VAK = 7 V, Gate Open, Initiating Current = 20 mA) | IH | TJ= 25°C | - | - | 10 | mA |
| Gate Trigger Voltage (VD = 7 V; RL =100 Ohms) | VGT | TJ=-40°C | - | 0.62 | 0.8 | V |
| TJ= 25°C | - | - | 1.2 | V | ||
| Latch Current (VAK =7.0 V, Ig= 200 uA) | IL | TJ= 25°C | - | 0.6 | 10 | mA |
| TJ= -40°C | - | - | 15 | mA |
Dynamic Characteristics
| Characteristics | Symbol | Temperature | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Critical Rate of Rise of Off-State Voltage (VD=Rated VDRM, Exponential Waveform, RGK=1K Ohms, TJ=110℃) | dv/dt | TJ=110℃ | 20 | 35 | - | V/µs |
| Repetitive Critical Rate of Rise of On-State Current (IPK=20A, PW = 10µs, di/dt = 1A/µs, IGT = 20mA) | di/dt | - | - | - | 50 | A/µs |
Note 5: RGK Current not included in measurement.
Rating and Characteristic Curves
The document includes several characteristic curves illustrating device performance across different conditions:
Diagrammatic Representation of SCR Characteristics: A conceptual diagram illustrating the I-V characteristics of an SCR, showing forward blocking (IDRM at VDRM), reverse blocking (IRRM at VRRM), and on-state regions. The role of gate current in triggering the device is also depicted.
Figure 1: Typical Gate Trigger Current versus Junction Temperature: This graph shows that the typical gate trigger current (IGT) decreases as the junction temperature (TJ) increases from -40°C to 110°C.
Figure 2: Typical Gate Trigger Voltage versus Junction Temperature: This graph indicates that the typical gate trigger voltage (VGT) decreases slightly as the junction temperature (TJ) increases from -40°C to 110°C.
Figure 3: Typical Holding Current versus Junction Temperature: This graph shows that the typical holding current (IH) increases slightly as the junction temperature (TJ) increases from -40°C to 110°C.
Figure 4: Typical Latching Current versus Junction Temperature: This graph shows that the typical latching current (IL) increases slightly as the junction temperature (TJ) increases from -40°C to 110°C.
Figure 5: Typical RMS Current Derating: This graph illustrates the maximum allowable case temperature (TC) versus RMS on-state current (IT(RMS)) for various conduction angles (DC, 180°, 120°, 90°, 60°, 30°), showing how current handling capability decreases with increasing temperature and decreasing conduction angle.
Figure 6: Typical On-State Characteristics: This graph plots instantaneous on-state voltage (VT) against instantaneous on-state current (IT) for different junction temperatures (25°C and 110°C), showing the forward voltage drop characteristics.
Ordering Information
| Orderable Part Number | Package | Qty. | Carrier |
|---|---|---|---|
| S1U50700A | TO-92 | 2000 | T&R |
| S1U50700A_HF | TO-92 | 2000 | T&R |
Marking Information
The device marking includes:
- Logo: Diodes Incorporated logo.
- Product Type Marking Code: LT YXM S1U50 700A.
- Date Code: Y = Year Code, X = Manufacturer's Internal Code, M = Month Code.
Important Notice
Diodes Incorporated (Diodes) and its subsidiaries provide information in this document without warranty of any kind, express or implied. The information is for illustrative purposes only and Diodes assumes no liability for its application or use. This document is intended for skilled engineering customers. Customers are responsible for selecting appropriate products, evaluating suitability, ensuring compliance with legal and regulatory requirements, and designing with safeguards. Diodes assumes no liability for application-related information or support. Products may be covered by patents. Diodes does not grant licenses under its intellectual property rights. Products are subject to Diodes' Standard Terms and Conditions of Sale. Products and technology may not be used in violation of applicable laws and regulations. While efforts are made to ensure accuracy, the document may contain inaccuracies. Diodes reserves the right to make changes without notice. The English version of this document is the definitive one. Unauthorized copying or distribution is prohibited.
More information:
- Standard Terms and Conditions of Sale: https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/
- Important Notice Updates: https://www.diodes.com/about/company/terms-and-conditions/important-notice
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