Diodes GBU1506-GBU1510: 15A Standard Recovery Bridge Rectifier

Product Datasheet

Product Summary

VRRM (V) IF (A) VF Max (V) @ IF = 7.5A IR Max (µA)
600, 800, 1000 15 1.1 5

Features

Mechanical Data

Ordering Information

Note 4: For packaging details, visit Diodes Packaging Information.

Orderable Part Number Package Qty. Carrier
GBU1506-TU GBU 20pcs Tube
GBU1508-TU GBU 20pcs Tube
GBU1510-TU GBU 20pcs Tube

Notes:

Marking Information

The product marking consists of:

The marking diagram shows a symbol (likely the Diodes logo), the product type code, and the date code.

Maximum Ratings

All ratings are @ TA = +25°C, unless otherwise specified.

Characteristic Symbol GBU1506 GBU1508 GBU1510 Unit
Maximum Repetitive Peak Reverse Voltage VRRM 600 800 1000 V
Maximum DC Blocking Voltage VDC 600 800 1000 V
Average Rectified Output Current @TC = +100°C IF(AV) 15 (With Heatsink), 3.2 (Without Heatsink) A
Peak Forward Surge Current 8.3ms Single Half Sine Wave @ TJ = +25°C IFSM 200 A
I²t Rating for Fusing (t = 8.3ms) I²t 166 A²s
Mounting Torque (Recommended Torque: 0.5 N.m) TOR 0.8 N.m
Operating Junction Temperature Range TJ, TSTG -55 to +150 °C

Electrical Characteristics

All characteristics are @ TA = +25°C, unless otherwise specified.

Characteristic Test Condition Symbol Max Unit
Forward Voltage IF = 7.5A, TJ = +25°C VF 1.1 V
Leakage Current VR at Rated, TJ = +25°C IR 5 µA
TJ = +125°C 500 µA
Typical Junction Capacitance (Note 5) TJ = +25°C, f = 1MHz, VR = 4.0V DC CT 50 pF

Note 5: Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

Thermal Characteristics

Characteristic Symbol Typ Unit
Typical Thermal Resistance (Note 6) RJC 2 °C/W

Note 6: Device mounted on 200mm * 200mm * 5mm AL plate heatsink.

Performance Graphs

Figure 1. Forward Current Derating Curve: This graph shows the relationship between Average Forward Current (A) and Case Temperature (°C). It displays two curves: one for devices with a heatsink and one for devices without a heatsink, illustrating how current handling capacity decreases with increasing temperature.

Figure 2. Maximum Non-Repetitive Surge Current: This graph plots Peak Forward Surge Current (A) against the Number of Cycles at 60Hz for an 8.3ms Single Half Sine Wave. It indicates the maximum surge current the device can withstand for a short duration.

Figure 3. Typical Reverse Characteristics: This graph illustrates Instantaneous Reverse Current (µA) versus the Percentage of Rated Peak Reverse Voltage (%). It shows three distinct curves representing different junction temperatures: TJ = 25°C, TJ = 100°C, and TJ = 125°C, demonstrating how reverse leakage increases with temperature and voltage.

Figure 4. Typical Junction Capacitance: This graph displays Capacitance (pF) against Reverse Voltage (V) for a junction temperature of TJ = 25°C and a frequency of f = 1MHz. It shows a decreasing capacitance as reverse voltage increases.

Figure 5. Typical Forward Characteristics: This graph plots Instantaneous Forward Current (A) against Instantaneous Forward Voltage (V) for a junction temperature of TJ = 25°C and a pulse width of 300µs. It shows the forward voltage drop at various forward current levels.

Package Outline Dimensions

The GBU package dimensions are provided in millimeters (mm). For the latest version, please refer to Diodes Package Outlines.

Dim Min Max
A21.822.3
B3.54.1
C7.47.9
D1.652.16
E2.252.75
F1.952.35
G1.021.27
H4.835.33
J17.518.0
K3.2 x 45°-
L18.318.8
M3.303.56
N0.460.56
O1.90R-
P0.761.0

The diagram shows the physical layout of the GBU package with lead designations and dimensions labeled.

Important Notice

Diodes Incorporated (Diodes) and its subsidiaries make no warranties, express or implied, regarding the information in this document. This document is for informational purposes only and is intended for skilled engineering customers. Diodes assumes no liability for application-related information or support. Products may be covered by patents and trademarks. Diodes' products are subject to Standard Terms and Conditions of Sale. Use of Diodes' products in systems prohibited by law or for unintended applications is the sole responsibility of the customer. While efforts have been made to ensure accuracy, the document may contain technical inaccuracies or typographical errors. Diodes reserves the right to make changes without notice. The English version of this document is the definitive one. Unauthorized use or distribution is prohibited.

For the most recent version of this notice, visit: Diodes Important Notice.

Diodes logo is a registered trademark of Diodes Incorporated. All other trademarks are property of their respective owners.

© 2025 Diodes Incorporated. All Rights Reserved.

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