Diodes 2DB1182Q: 32V PNP Medium Power Transistor in TO252
Brand: Diodes Incorporated
Document Type: Datasheet
Product Overview
The 2DB1182Q is a 32V PNP medium power transistor housed in a TO252 (DPAK) package. It is designed for medium power switching or amplification applications.
Features
- BVCEO > -32V
- IC = -2A High Continuous Collector Current
- ICM = -3A Peak Pulse Current
- Epitaxial Planar Die Construction
- Low Collector-Emitter Saturation Voltage
- Ideal for Medium Power Switching or Amplification Applications
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. "Green" Device
- Suitable for automotive applications requiring specific change control; AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
Further details on quality definitions can be found at: diodes.com/quality/product-definitions/
Mechanical Data
- Package: TO252 (DPAK)
- Package Material: Molded Plastic, "Green" Molding Compound.
- UL Flammability Classification: Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals Finish: Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 e3
- Weight: 0.34 grams (Approximate)
Package and Pinout
TO252 (DPAK) Top View: The package has three terminals. The top view shows the orientation of the pins.
Device Schematic: A standard schematic symbol for a PNP bipolar junction transistor.
Pinout Configuration Top View: The pins are labeled C (Collector), B (Base), and E (Emitter).
Ordering Information
| Orderable Part Number | Package | Marking | Reel Size (inches) | Tape Width (mm) | Qty. | Carrier |
|---|---|---|---|---|---|---|
| 2DB1182Q-13 | TO252 (DPAK) | 2DB1182Q | 13 | 16 | 3,000 | Reel |
Notes:
- 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
- 2. For more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free, see diodes.com/quality/lead-free/.
- 3. Halogen- and Antimony-free "Green" products contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
- 4. For packaging details, visit diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
The product marking code is 2DB1182Q. The date code consists of YYWW, where YY represents the last two digits of the year (e.g., 25 for 2025) and WW represents the week code (01 to 52). A manufacturer's code marking 'D' is also present.
Absolute Maximum Ratings
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | -40 | V |
| Collector-Emitter Voltage | VCEO | -32 | V |
| Emitter-Base Voltage | VEBO | -5 | V |
| Continuous Collector Current | IC | -2 | A |
| Peak Pulse Collector Current | ICM | -3 | A |
Thermal Characteristics
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Power Dissipation (Note 5) | PD | 1.2 | W |
| Power Dissipation @TL = +25°C (Note 6) | PD | 1.5 | W |
| Thermal Resistance, Junction to Ambient (Note 5) | ROJA | 104 | °C/W |
| Thermal Resistance, Junction to Lead (Note 7) | ROJL | 8.3 | °C/W |
| Thermal Resistance, Junction to Case (Note 5) | ROJC | 18 | °C/W |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C |
Notes:
- 5. For a device mounted with the exposed collector pad on minimum recommended pad (MRP) layout 1oz copper on a single-sided 1.6mm FR4 PCB; device measured under still air conditions whilst operating in a steady state.
- 6. Same as Note 5 except the device is mounted on 15mm x 15mm 1oz copper.
- 7. Thermal resistance from junction to solder-point at the end of the collector lead.
ESD Ratings
| Characteristic | Symbol | Value | Unit | JEDEC Class |
|---|---|---|---|---|
| Electrostatic Discharge - Human Body Model | ESD HBM | 4,000 | V | 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | C |
Note: 8. Refer to JEDEC specifications JESD22-A114 and JESD22-A115.
Thermal Characteristics Graph
Figure 1 Transient Thermal Response: This graph illustrates the transient thermal resistance (r(t)) of the device as a function of pulse duration time (t1). It includes curves for various duty cycles (D) and provides the formula TJ - TA = P * ROJA(t) for calculating junction temperature, where ROJA = 110°C/W and D = t1/t2.
Electrical Characteristics
OFF CHARACTERISTICS (Note 9)
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | -40 | V | IC = -50μA, IE = 0 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | -32 | V | IC = -1mA, IB = 0 | ||
| Emitter-Base Breakdown Voltage | BVEBO | -5 | V | IE = -50μA, IC = 0 | ||
| Collector Cutoff Current | ICBO | -1 | μA | VCB = -20V, IE = 0 | ||
| Emitter Cutoff Current | IEBO | -1 | μA | VEB = -4V, IC = 0 |
ON CHARACTERISTICS (Note 9)
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.8 | V | IC = -2A, IB = -0.2A | ||
| DC Current Gain | hFE | 120 | 270 | VCE = -3V, IC = -0.5A |
SMALL-SIGNAL CHARACTERISTICS
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Current Gain-Bandwidth Product | fT | 110 | MHz | VCE = -5V, IC = -0.1A, f = 30MHz | ||
| Output Capacitance | Cobo | 26 | pF | VCB = -10V, f = 1MHz | ||
| Turn-On Time | ton | 109 | ns | VCC = 30V, ICC = 150mA | ||
| Delay Time | td | 60 | ns | IB1 = IB2 = 15mA | ||
| Rise Time | tr | 49 | ns | |||
| Turn-Off Time | toff | 280 | ns | |||
| Storage Time | ts | 246 | ns | |||
| Fall Time | tf | 34 | ns |
Note: 9. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤ 2%.
Typical Electrical Characteristics Graphs
Figure 2 Typical Collector Current vs. Collector-Emitter Voltage: This graph displays collector current (IC) in mA versus collector-emitter voltage (VCE) in Volts. Curves are shown for different base currents (IB) ranging from -1mA to -5mA.
Figure 3 Typical DC Current Gain vs. Collector Current: This graph plots DC current gain (hFE) against collector current (IC) in Amperes. Multiple curves represent different ambient temperatures (TA) from -55°C to 150°C, with VCE held at -3V.
Figure 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current: This graph shows collector-emitter saturation voltage (VCE(sat)) in Volts as a function of collector current (IC) in Amperes. Curves are plotted for various ambient temperatures (TA) from -55°C to 150°C, with a constant IC/IB ratio of 10.
Figure 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current: This graph illustrates base-emitter turn-on voltage (VBE(on)) in Volts versus collector current (IC) in Amperes. Curves are shown for different ambient temperatures (TA) from -55°C to 150°C, with VCE at -3V.
Figure 6 Typical Base-Emitter Saturation Voltage vs. Collector Current: This graph displays base-emitter saturation voltage (VBE(sat)) in Volts as a function of collector current (IC) in Amperes. Curves are plotted for various ambient temperatures (TA) from -55°C to 150°C, with a constant IC/IB ratio of 10.
Figure 7 Typical Capacitance Characteristics: This graph shows capacitance (pF) versus reverse voltage (VR) in Volts. It includes curves for Cibo and Cobo capacitances, measured at 1MHz.
Figure 8 Typical Gain-Bandwidth Product vs. Collector Current: This graph plots the gain-bandwidth product (fT) in MHz against collector current (IC) in mA. The measurements are taken at VCE = -5V and f = 30MHz.
Package Outline Dimensions
TO252 (DPAK) Package Dimensions:
The TO252 package is illustrated with key dimensions labeled (A, A1, A2, b, b2, b3, c, D, D1, e, E, E1, H, L, L3, L4, a). The diagram shows the top, side, and end views of the package, including details like the gauge plane and seating plane.
| Dim | Min | Max | Typ | Unit |
|---|---|---|---|---|
| A | 2.19 | 2.39 | 2.29 | mm |
| A1 | 0.00 | 0.13 | 0.08 | mm |
| A2 | 0.97 | 1.17 | 1.07 | mm |
| b | 0.64 | 0.88 | 0.783 | mm |
| b2 | 0.76 | 1.14 | 0.95 | mm |
| b3 | 5.21 | 5.50 | 5.33 | mm |
| c | 0.45 | 0.58 | 0.531 | mm |
| D | 6.00 | 6.20 | 6.10 | mm |
| D1 | 5.21 | mm | ||
| e | 2.286 BSC | |||
| E | 6.45 | 6.70 | 6.58 | mm |
| E1 | 4.32 | mm | ||
| H | 9.40 | 10.41 | 9.91 | mm |
| L | 1.40 | 1.78 | 1.59 | mm |
| L3 | 0.88 | 1.27 | 1.08 | mm |
| L4 | 0.64 | 1.02 | 0.83 | mm |
| a | 0° | 10° |
All dimensions are in mm.
Suggested Pad Layout
TO252 (DPAK) Suggested Pad Layout:
The recommended PCB pad layout for the TO252 package is shown, with dimensions for pads C, X, X1, Y, Y1, and Y2.
| Dimensions | Value (in mm) |
|---|---|
| C | 4.572 |
| X | 1.060 |
| X1 | 5.632 |
| Y | 2.600 |
| Y1 | 5.700 |
| Y2 | 10.700 |
Important Notice
Diodes Incorporated (Diodes) and its subsidiaries make no warranty of any kind, express or implied, regarding the information contained in this document. The information is for informational purposes only and illustrates product operation and application examples. Diodes assumes no liability arising from the use of this document or its products. This document is intended for skilled and technically trained customers. Customers are responsible for selecting appropriate products, evaluating suitability, ensuring compliance with regulations and safety standards, and designing with appropriate safeguards. Diodes assumes no liability for application-related information, support, or assistance. Products may be covered by patents and trademarks; no license is conveyed. Products are provided subject to Diodes' Standard Terms and Conditions of Sale. Diodes' products and technology may not be used in violation of applicable laws or regulations. While efforts have been made to ensure accuracy, the document may contain inaccuracies. Diodes reserves the right to make changes without notice. This document is primarily in English; only the English version is determinative. Unauthorized copying or distribution is prohibited. Diodes' logo is a registered trademark. All other trademarks are the property of their respective owners.
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