FMMT591A
40V PNP MEDIUM POWER TRANSISTOR IN SOT23
Features
- BVCEO > -40V
- Ic = -1A High Continuous Current
- Ісм = -2A Peak Pulse Current
- Low Saturation Voltage VCE(sat) < -500mV @ -1A
- Rsat = 350mΩ for a Low Equivalent On-Resistance
- Complementary NPN Type: FMMT491A
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. "Green" Device (Note 3)
- For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact Diodes Incorporated or your local Diodes representative. https://www.diodes.com/quality/product-definitions/
Mechanical Data
- Package: SOT23
- Package Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208
- Weight: 0.008 grams (Approximate)
Application
- Power MOSFET gate driving
- Low loss power switching
Package and Symbol Diagrams
SOT23 (Type DN) Top View: A diagram showing the SOT23 surface-mount package from the top, with three leads. The leads are typically labeled as Base (B), Collector (C), and Emitter (E).
Device Symbol: A schematic symbol representing a PNP bipolar junction transistor, indicating the emitter, base, and collector terminals.
Top View Pin-Out: A diagram illustrating the SOT23 package from the top, explicitly showing the pin configuration corresponding to the device symbol: Base (B), Collector (C), and Emitter (E).
Ordering Information
| Orderable Part Number | Package | Marking | Reel Size (inches) | Tape Width (mm) | Qty | Carrier |
|---|---|---|---|---|---|---|
| FMMT591ATA | SOT23 (Type DN) | 91A | 7 | 8 | 3,000 | Reel |
| FMMT591ATC | SOT23 (Type DN) | 91A | 7 | 8 | 10,000 | Reel |
Notes:
- No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
- See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free.
- Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
- For packaging details, go to Diodes Incorporated's website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
SOT23 (Type DN): The product type marking code is "91A".
Absolute Maximum Ratings
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | -40 | V |
| Collector-Emitter Voltage | VCEO | -40 | V |
| Emitter-Base Voltage | VEBO | -7 | V |
| Continuous Collector Current | IC | -1 | A |
| Peak Pulse Current | ICM | -2 | A |
| Base Current | IB | -200 | mA |
| Peak Base Current | IBM | -1 | A |
Thermal Characteristics
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Power Dissipation (Note 5) | PD | 500 | mW |
| Thermal Resistance, Junction to Ambient (Note 5) | ROJA | 250 | °C/W |
| Thermal Resistance, Junction to Case (Note 5) | ReJC | 66 | °C/W |
| Thermal Resistance, Junction to Lead (Note 6) | ReJL | 197 | °C/W |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C |
ESD Ratings
| Characteristic | Symbol | Value | Unit | JEDEC Class |
|---|---|---|---|---|
| Electrostatic Discharge - Human Body Model | ESD HBM | 4,000 | V | 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | C |
Notes:
- 5. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state.
- 6. Thermal resistance from junction to solder-point (at the end of the collector lead).
- 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristics and Derating Information
Fig.1 Transient Thermal Impedance: This graph illustrates thermal resistance in °C/W on the Y-axis versus pulse width in seconds (s) on the X-axis (logarithmic scale). It displays curves for various duty cycles (D=0.05, D=0.1, D=0.2, D=0.5, Single Pulse) for a device mounted on a 15mm x 15mm 1oz copper FR4 PCB.
Fig.2 Pulse Power Dissipation: This graph shows maximum power dissipation in Watts (W) on the Y-axis versus pulse width in seconds (s) on the X-axis (logarithmic scale). It presents curves for various duty cycles for a device mounted on a 15mm x 15mm 1oz copper FR4 PCB.
Fig.3 Derating Curve: This graph plots maximum power dissipation in Watts (W) on the Y-axis against temperature in degrees Celsius (°C) on the X-axis. It shows a downward sloping line, indicating how the maximum power dissipation decreases as the operating temperature increases.
Electrical Characteristics
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | -40 | -- | -- | V | IC = -100μA |
| Collector-Emitter Breakdown Voltage (Note 8) | BVCEO | -40 | -- | -- | V | IC = -10mA |
| Emitter-Base Breakdown Voltage | BVEBO | -7 | -- | -- | V | IE = -100μA |
| Collector Cutoff Current | ICBO | -- | -- | -100 | nA | VCB = -30V |
| Collector-Emitter Cutoff Current | ICES | -- | -- | -100 | nA | VCES = -30V |
| Emitter Cutoff Current | IEBO | -- | -- | -100 | nA | VEB = -5.6V |
| Collector-Emitter Saturation Voltage (Note 8) | VCE(sat) | -- | -200 | -500 | mV | IC = -100mA, IB = -1mA; IC = -500mA, IB = -20mA; IC = -1A, IB = -100mA |
| Base-Emitter Saturation Voltage (Note 8) | VBE(sat) | -- | -1.1 | -- | V | IC = -1A, IB = -100mA |
| Base-Emitter Turn-On Voltage (Note 8) | VBE(on) | -- | -1.0 | -- | V | IC = -1A, VCE = -5V |
| Static Forward Current Transfer Ratio (Note 8) | hFE | 300 | 300 | 800 | -- | IC = -1mA, VCE = -5V; IC = -10mA, VCE = -5V; IC = -100mA, VCE = -5V; IC = -500mA, VCE = -5V; IC = -1A, VCE = -5V; IC = -2A, VCE = -5V |
| Transition Frequency | ft | 150 | -- | -- | MHz | VCE = -10V, IC = -50mA, f = 100MHz |
| Output Capacitance | Cobo | -- | 10 | -- | pF | VCB = -10V, f = 1MHz |
| Switching Time (Delay Time, Rise Time, Storage Time, Fall Time) | td, tr, ts, tf | -- | 34.9, 19.2, 249, 62 | -- | ns | Vcc = -10V, Ic = -500mA, IB1 = -IB2 = -25mA |
Note 8: Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
Typical Electrical Characteristics Graphs
Fig.4 VCE(sat) v Ic: This graph shows the relationship between collector-emitter saturation voltage (-VCE(sat) in Volts) and collector current (-Ic in Amperes) for various collector-to-emitter current ratios (I/IL = 10, 20, 50, 100) at an ambient temperature of 25°C.
Fig.5 VCE(sat) v Ic: This graph displays collector-emitter saturation voltage (-VCE(sat) in Volts) versus collector current (-Ic in Amperes) for a collector-to-emitter current ratio of I/IL = 10, across different temperatures (-55°C, 25°C, 100°C, 150°C).
Fig.6 hFE v Ic: This graph illustrates the common-emitter current gain (hFE) versus collector current (-Ic in Amperes) for a collector-emitter voltage (VCE) of -5V, shown at various temperatures (-55°C, 25°C, 100°C, 150°C).
Fig.7 VBE(sat) v Ic: This graph plots the base-emitter saturation voltage (-VBE(sat) in Volts) against collector current (-Ic in Amperes) for a collector-to-emitter current ratio of I/IL = 10, across different temperatures (-55°C, 25°C, 100°C, 150°C).
Fig.8 VBE(on) v Ic: This graph shows the base-emitter turn-on voltage (-VBE(on) in Volts) versus collector current (-Ic in Amperes) for a collector-emitter voltage (VCE) of -5V, presented at various temperatures (-55°C, 25°C, 100°C, 150°C).
Package Outline Dimensions
SOT23 (Type DN) Package Dimensions:
| Dim | Min | Max | Typ |
|---|---|---|---|
| A | 0.89 | 1.12 | 1.00 |
| A1 | 0.01 | 0.10 | 0.05 |
| b | 0.30 | 0.51 | 0.45 |
| c | 0.08 | 0.20 | 0.10 |
| D | 2.80 | 3.04 | 3.00 |
| E | 2.10 | 2.64 | 2.42 |
| E1 | 1.20 | 1.40 | 1.37 |
| e | 0.95 REF | ||
| e1 | 1.90 REF | ||
| L | 0.25 | 0.60 | 0.30 |
| L1 | 0.45 | 0.62 | 0.54 |
| All Dimensions in mm | |||
A diagram shows the SOT23 package outline with dimensions labeled A, A1, b, c, D, E, E1, e, e1, L, L1.
Suggested Pad Layout
SOT23 (Type DN) Pad Layout Dimensions:
| Dimensions | Value (in mm) |
|---|---|
| C | 2.0 |
| X | 0.8 |
| X1 | 1.35 |
| Y | 0.9 |
| Y1 | 2.9 |
A diagram shows the recommended pad layout for the SOT23 package, with dimensions labeled C, X, X1, Y, Y1.
Important Notice
DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
The Information contained herein is for informational purpose only and is provided only to illustrate the operation of Diodes' products described herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein. This document is intended for skilled and technically trained engineering customers and users who design with Diodes' products. Diodes' products may be used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products for their applications, (b) evaluating the suitability of Diodes' products for their intended applications, (c) ensuring their applications, which incorporate Diodes' products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for aging degradation) to minimize the risks associated with their applications.
Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes and all companies whose products are represented herein or on Diodes' websites, harmless against all damages and liabilities.
Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications. Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and services may be described in this document or on Diodes' website) under this document.
Diodes' products are provided subject to Diodes' Standard Terms and Conditions of Sale (https://www.diodes.com/about/company/terms-and-conditions/terms-and-conditions-of-sales/) or other applicable terms. This document does not alter or expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Diodes' products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sale is prohibited under any applicable laws and regulations. Should customers or users use Diodes' products in contravention of any applicable laws or regulations, or for any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well as any unintended or unauthorized application.
While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes.
Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited. Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use.
This Notice may be periodically updated with the most recent version available at https://www.diodes.com/about/company/terms-and-conditions/important-notice
The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries. All other trademarks are the property of their respective owners. © 2025 Diodes Incorporated. All Rights Reserved.
