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onsemi MC10EP01, MC100EP01: 3.3 V/5 V ECL 4-Input OR/NOR Gate

Datasheet

Description

The MC10EP01 is a 4-input OR/NOR gate. The device is functionally equivalent to the EL01 device, LVEL01, and E101 (a quad version). With AC performance much faster than the LVEL01 device, the EP01 is ideal for applications requiring the fastest AC performance available. The 100 Series contains temperature compensation.

Features

Ordering Information

Device Package Shipping
MC100EP01DG SOIC-8 NB (Pb-Free) 98 Units / Tube
MC100EP01DTG TSSOP-8 (Pb-Free) 100 Units / Tube
MC10EP01MNR4G QFN-20 (Pb-Free) 1000 / Tape & Reel

DISCONTINUED (Note 1)

Note 1: This device is not recommended for new designs. Please contact your onsemi representative for information. The most current information on this device may be available on www.onsemi.com.

Pin Description

Pin Function
D0 - D3 ECL Data Inputs
Q, Q ECL Data Outputs
VCC Positive Supply
VEE Negative Supply
EP (DFN8 only) Thermal exposed pad must be connected to a sufficient thermal conduit. Electrically connect to the most negative supply (GND) or leave unconnected, floating open.

Truth Table

D0* D1* D2* D3* Q Q
L L L L L H
H X X X H L
X H X X H L
X X H X H L
X X X H H L
H H H H H L

*Pins will default LOW when left open.

Attributes

Characteristics Value
Internal Input Pulldown Resistor 75 kΩ
Internal Input Pullup Resistor N/A
ESD Protection (Human Body Model) > 4 kV
ESD Protection (Machine Model) > 200 V
ESD Protection (Charged Device Model) > 2 kV
Moisture Sensitivity, Indefinite Time Out of Drypack (Note 1) Pb-Free Pkg
SOIC-8 NB Level 1
TSSOP-8 Level 3
DFN8 Level 1
Flammability Rating UL 94 V-0 @ 0.125 in
Oxygen Index: 28 to 34
Transistor Count 115 Devices
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test

Maximum Ratings

Symbol Parameter Condition 1 Condition 2 Rating Unit
VCC PECL Mode Power Supply VEE = 0 V 6 V
VEE NECL Mode Power Supply VCC = 0 V -6 V
VI PECL Mode Input Voltage VEE = 0 V VI ≤ VCC 6 V
VI NECL Mode Input Voltage VCC = 0 V VI ≥ VEE -6 V
IOUT Output Current Continuous Surge 50 100 mA
IBB VBB Sink/Source ±0.5 mA
TA Operating Temperature Range -40 to +85 °C
Tstg Storage Temperature Range -65 to +150 °C
θJA Thermal Resistance (Junction-to-Ambient) 0 Ifpm SOIC-8 NB 190 °C/W
500 Ifpm SOIC-8 NB 130 °C/W
θJC Thermal Resistance (Junction-to-Case) Standard Board SOIC-8 NB 41 to 44 °C/W
θJA Thermal Resistance (Junction-to-Ambient) 0 Ifpm TSSOP-8 185 °C/W
500 Ifpm TSSOP-8 140 °C/W
θJC Thermal Resistance (Junction-to-Case) Standard Board TSSOP-8 41 to 44 °C/W
θJA Thermal Resistance (Junction-to-Ambient) 0 Ifpm DFN8 129 °C/W
500 Ifpm DFN8 84 °C/W
Tsol Wave Solder (Pb-Free) < 2 to 3 sec @ 260°C 265 °C
θJC Thermal Resistance (Junction-to-Case) (Note 2) DFN8 35 to 40 °C/W

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

Note 2: JEDEC standard multilayer board - 2S2P (2 signal, 2 power).

DC Characteristics (PECL)

Table 5. 10EP DC CHARACTERISTICS, PECL (VCC = 3.3 V, VEE = 0 V (Note 1))

Symbol Characteristic -40°C 25°C 85°C Unit
Min Typ Max Min Typ Max Min Typ Max
IEE Power Supply Current 20 24 31 20 24 31 20 24 31 mA
VOH Output HIGH Voltage (Note 2) 2165 2290 2415 2230 2355 2480 2290 2415 2540 mV
VOL Output LOW Voltage (Note 2) 1365 1490 1615 1430 1555 1680 1490 1615 1740 mV
VIH Input HIGH Voltage (Single-Ended) 2090 2415 2155 2480 2215 2540 mV
VIL Input LOW Voltage (Single-Ended) 1365 1690 1430 1755 1490 1815 mV
IIH Input HIGH Current 150 150 150 μA
IIL Input LOW Current 0.5 0.5 0.5 μA

Note: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm.

1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to -2.2 V.

2. All loading with 50 Ω to VCC - 2.0 V.

Table 6. 10EP DC CHARACTERISTICS, PECL (VCC = 5.0 V, VEE = 0 V (Note 1))

Symbol Characteristic -40°C 25°C 85°C Unit
Min Typ Max Min Typ Max Min Typ Max
IEE Power Supply Current 20 24 31 20 24 31 20 24 31 mA
VOH Output HIGH Voltage (Note 2) 3865 3990 4115 3930 4055 4180 3990 4115 4240 mV
VOL Output LOW Voltage (Note 2) 3065 3190 3315 3130 3255 3380 3190 3315 3440 mV
VIH Input HIGH Voltage (Single-Ended) 3790 4115 3855 4180 3915 4240 mV
VIL Input LOW Voltage (Single-Ended) 3065 3390 3130 3455 3190 3515 mV
IIH Input HIGH Current 150 150 150 μA
IIL Input LOW Current 0.5 0.5 0.5 μA

Note: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm.

1. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to -0.5 V.

2. All loading with 50 Ω to VCC - 2.0 V.

Table 7. 10EP DC CHARACTERISTICS, NECL (VCC = 0 V; VEE = −5.5 V to –3.0 V (Note 1))

Symbol Characteristic -40°C 25°C 85°C Unit
Min Typ Max Min Typ Max Min Typ Max
IEE Power Supply Current 20 24 31 20 24 31 20 24 31 mA
VOH Output HIGH Voltage (Note 2) -1135 -1010 -885 -1070 -945 -820 -1010 -885 -760 mV
VOL Output LOW Voltage (Note 2) -1935 -1810 -1685 -1870 -1745 -1620 -1810 -1685 -1560 mV
VIH Input HIGH Voltage (Single-Ended) -1210 -885 -1145 -820 -1085 -760 mV
VIL Input LOW Voltage (Single-Ended) -1935 -1610 -1870 -1545 -1810 -1485 mV
IIH Input HIGH Current 150 150 150 μA
IIL Input LOW Current 0.5 0.5 0.5 μA

Note: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm.

1. Input and output parameters vary 1:1 with VCC.

2. All loading with 50 Ω to VCC - 2.0 V.

Table 8. 100EP DC CHARACTERISTICS, PECL (VCC = 3.3 V, VEE = 0 V (Note 1))

Symbol Characteristic -40°C 25°C 85°C Unit
Min Typ Max Min Typ Max Min Typ Max
IEE Power Supply Current 15 24 32 17 26 36 19 28 38 mA
VOH Output HIGH Voltage (Note 2) 2155 2280 2405 2155 2280 2405 2155 2280 2405 mV
VOL Output LOW Voltage (Note 2) 1355 1480 1605 1355 1480 1605 1355 1480 1605 mV
VIH Input HIGH Voltage (Single-Ended) 2075 2420 2075 2420 2075 2420 mV
VIL Input LOW Voltage (Single-Ended) 1355 1675 1355 1675 1355 1675 mV
IIH Input HIGH Current 150 150 150 μA
IIL Input LOW Current 0.5 0.5 0.5 μA

Note: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm.

1. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to -2.2 V.

2. All loading with 50 Ω to VCC - 2.0 V.

Table 9. 100EP DC CHARACTERISTICS, PECL (VCC = 5.0 V, VEE = 0 V (Note 1))

Symbol Characteristic -40°C 25°C 85°C Unit
Min Typ Max Min Typ Max Min Typ Max
IEE Power Supply Current 15 24 32 17 26 36 19 28 38 mA
VOH Output HIGH Voltage (Note 2) 3855 3980 4105 3855 3980 4105 3855 3980 4105 mV
VOL Output LOW Voltage (Note 2) 3055 3180 3305 3055 3180 3305 3055 3180 3305 mV
VIH Input HIGH Voltage (Single-Ended) 3775 4120 3775 4120 3775 4120 mV
VIL Input LOW Voltage (Single-Ended) 3055 3375 3055 3375 3055 3375 mV
IIH Input HIGH Current 150 150 150 μA
IIL Input LOW Current 0.5 0.5 0.5 μA

Note: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm.

1. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to -0.5 V.

2. All loading with 50 Ω to VCC - 2.0 V.

Table 10. 100EP DC CHARACTERISTICS, NECL (VCC = 0 V; VEE = −5.5 V to –3.0 V (Note 1))

Symbol Characteristic -40°C 25°C 85°C Unit
Min Typ Max Min Typ Max Min Typ Max
IEE Power Supply Current 15 24 32 17 26 36 19 28 38 mA
VOH Output HIGH Voltage (Note 2) -1145 -1020 -895 -1145 -1020 -895 -1145 -1020 -895 mV
VOL Output LOW Voltage (Note 2) -1945 -1820 -1695 -1945 -1820 -1695 -1945 -1820 -1695 mV
VIH Input HIGH Voltage (Single-Ended) -1225 -880 -1225 -880 -1225 -880 mV
VIL Input LOW Voltage (Single-Ended) -1945 -1625 -1945 -1625 -1945 -1625 mV
IIH Input HIGH Current 150 150 150 μA
IIL Input LOW Current 0.5 0.5 0.5 μA

Note: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm.

1. Input and output parameters vary 1:1 with VCC.

2. All loading with 50 Ω to VCC - 2.0 V.

AC Characteristics

Table 11. AC CHARACTERISTICS (VCC = 3.0 V to 5.5 V; VEE = 0 V or VCC = 0 V; VEE = −3.0 V to -5.5 V (Note 1))

Symbol Characteristic -40°C 25°C 85°C Unit
Min Typ Max Min Typ Max Min Typ Max
fmax Maximum Frequency (See Figure 2. Fmax/JITTER) > 3 > 3 > 3 GHz
tPLH, tPHL Propagation Delay D to Q, Q 150 260 330 150 270 330 200 300 350 ps
JITTER Cycle-to-Cycle Jitter (See Figure 2. Fmax/JITTER) 0.2 < 1 0.2 < 1 0.2 < 1 ps
tr, tf Output Rise/Fall Times Q, Q (20%-80%) 50 120 170 60 130 180 70 150 200 ps

Note: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit board with maintained transverse airflow greater than 500 Ifpm.

1. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 Ω to VCC – 2.0 V.

Figure 2. Fmax/Jitter

[Graph showing Maximum Frequency vs. Jitter]

Figure 3. Typical Termination for Output Driver and Device Evaluation

[Circuit diagram showing typical termination for output driver and device evaluation]

Resource Reference of Application Notes

ECLinPS is a registered trademark of Semiconductor Components Industries, LLC dba "onsemi" or its affiliates and/or subsidiaries in the United States and/or other countries.

Mechanical Case Outline

TSSOP-8 3.00x3.00x0.95

CASE 948R-02 ISSUE A

DATE 07 APR 2000

[Diagram of TSSOP-8 package dimensions with notes and a table of measurements in millimeters and inches]

NOTES:

  1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
  2. CONTROLLING DIMENSION: MILLIMETER.
  3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE.
  4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
  5. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY.
  6. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE -W-.
DIM MILLIMETERS INCHES
MIN MAX MIN MAX
A 2.90 3.10 0.114 0.122
B 2.90 3.10 0.114 0.122
C 0.80 1.10 0.031 0.043
D 0.05 0.15 0.002 0.006
F 0.40 0.70 0.016 0.028
G 0.65 BSC 0.026 BSC
K 0.25 0.40 0.010 0.016
L 4.90 BSC 0.193 BSC
M 0° 6° 0° 6°

Additional Information

TECHNICAL PUBLICATIONS:

Technical Library: www.onsemi.com/design/resources/technical-documentation

onsemi Website: www.onsemi.com

ONLINE SUPPORT: www.onsemi.com/support

For additional information, please contact your local Sales Representative at www.onsemi.com/support/sales

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