IXYS DSEI36-06AS FRED Fast Recovery Epitaxial Diode

Features / Advantages

• Planar passivated chips
• Low leakage current
• Very short recovery time
• Improved thermal behaviour
• Very low Irm-values
• Very soft recovery behaviour
• Avalanche voltage rated for reliable operation
• Soft reverse recovery for low EMI/RFI
• Low Irm reduces: Power dissipation within the diode, Turn-on loss in the commutating switch

Applications

• Antiparallel diode for high frequency switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode
• Rectifiers in switch mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)

Package: TO-263 (D2Pak)

• Industry standard outline
• RoHS compliant
• Epoxy meets UL 94V-0

Electrical Characteristics

Package Ratings (TO-263 D2Pak)

¹⁾ IRMS is typically limited by the pin-to-chip resistance or by the current capability of the chip. In case of multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.

Product Marking

The product marking includes the Part Number (DSEI36-06AS), the IXYS Logo, Date Code (yywwZ), and Lot# (123456).

Ordering Information

Equivalent Circuits for Simulation

An equivalent circuit model for a Fast Diode is provided, featuring a threshold voltage (V₀) of 1.1 V and a slope resistance (R₀) of 6 mΩ at T_VJ = 150°C.

Mechanical Dimensions (TO-263 D2Pak)

The TO-263 (D2Pak) package dimensions are provided in millimeters and inches. A recommended minimum footprint diagram is also included.

All dimensions conform with and/or within JEDEC standard.

Graphical Data

Fig. 1 Forward current versus max. forward voltage drop: Graph showing the relationship between Forward Current (IF) in Amperes (A) and Forward Voltage Drop (VF) in Volts (V) at different junction temperatures (TJ = 25°C, 100°C, 150°C).

Fig. 2 Recovery charge versus -dIF/dt: Graph illustrating Recovery Charge (Qr) in microcoulombs (µC) as a function of the rate of change of reverse current (-dIF/dt) in Amperes per microsecond (A/µs) for various forward currents (IF = 18.5 A, 37 A, 74 A) and reverse voltage (VR = 350 V).

Fig. 3 Peak reverse current versus -dIF/dt: Graph depicting Peak Reverse Current (IRM) in Amperes (A) versus the rate of change of reverse current (-dIF/dt) in Amperes per microsecond (A/µs) at different junction temperatures and forward currents.

Fig. 4 Dynamic parameters vs. junction temperature: Graph showing dynamic parameters (K_F, Q_r, I_RM) as a function of Junction Temperature (TJ) in degrees Celsius (°C).

Fig. 5 Recovery time versus -dIF/dt: Graph illustrating Reverse Recovery Time (trr) in microseconds (µs) as a function of the rate of change of reverse current (-dIF/dt) in Amperes per microsecond (A/µs) for various forward currents and reverse voltage.

Fig. 6 Peak forward voltage versus -dIF/dt: Graph depicting Peak Forward Voltage (V_F) in Volts (V) versus the rate of change of reverse current (-dIF/dt) in Amperes per microsecond (A/µs) at a junction temperature of 125°C and a forward current of 37 A.

Fig. 7 Transient thermal impedance junction to case: Graph showing Transient Thermal Impedance (ZthJC) in Kelvin per Watt (K/W) versus time (t) in milliseconds (ms) for the junction-to-case thermal resistance. Includes a table of constants for calculation.

Constants for ZthJC calculation:

Disclaimer Notice

Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXYS reserves the right to change limits, conditions and dimensions.

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