IXYS DSEI30-10A FRED: Fast Recovery Epitaxial Diode Datasheet

IXYS DSEI30-10A FRED

Fast Recovery Epitaxial Diode Single Diode

Product Overview

The IXYS DSEI30-10A is a Fast Recovery Epitaxial Diode (FRED) designed for high-frequency switching applications. It features a planar passivated chip, very short recovery time, and improved thermal behavior. This single diode is housed in the industry-standard TO-247 package.

Key Specifications:

  • Reverse Voltage (VRRM): 1000 V
  • Average Forward Current (IFAV): 30 A
  • Reverse Recovery Time (trr): 45 ns

Features / Advantages

  • Planar passivated chips
  • Low leakage current
  • Very short recovery time
  • Improved thermal behaviour
  • Very low Irm-values
  • Very soft recovery behaviour
  • Avalanche voltage rated for reliable operation
  • Soft reverse recovery for low EMI/RFI
  • Low Irm reduces power dissipation within the diode and turn-on loss in the commutating switch.

Applications

  • Antiparallel diode for high frequency switching devices
  • Antisaturation diode
  • Snubber diode
  • Free wheeling diode
  • Rectifiers in switch mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)

Package Information

Package: TO-247

  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0

Electrical Characteristics

Fast Diode Ratings
SymbolDefinitionConditionsmin.typ.max.Unit
VRRMmax. repetitive reverse blocking voltageTVJ = 25°C1000V
IRreverse current, drain currentVR = 1000 V, TVJ = 25°C750µA
VFforward voltage dropIF = 30 A, TVJ = 25°C2.36V
IFAVaverage forward currentTC = 90°C, rectangular d = 0.530A
VF0threshold voltageTVJ = 150°C1.53V
RFslope resistance {for power loss calculation only}15.5
RthJCthermal resistance junction to case0.8K/W
RthCHthermal resistance case to heatsink0.25K/W
Ptottotal power dissipationTC = 25°C155W
IFSMmax. forward surge currentt = 10 ms; (50 Hz), sine; VR = 0 V200A
CJjunction capacitanceVR = 600 V, f = 1 MHz, TVJ = 25°C16pF
IRMmax. reverse recovery currentIF = 30 A; VR = 540 V, TVJ = 100°C13A
trrreverse recovery time-diF/dt = 200 A/µs, TVJ = 100°C150ns

Note: Additional conditions and values for other parameters (e.g., VRRM, IR, VF at different conditions, trr at 25°C) are available in the original document.

Package Dimensions (TO-247)

The TO-247 package is an industry-standard outline for power semiconductors. The dimensions are provided in inches and millimeters.

Outlines TO-247 Dimensions
Sym.Inches (min./max.)Millimeter (min./max.)
A0.185 / 0.2094.70 / 5.30
A10.087 / 0.1022.21 / 2.59
A20.059 / 0.0981.50 / 2.49
D0.819 / 0.84520.79 / 21.45
E0.610 / 0.64015.48 / 16.24
E20.170 / 0.2164.31 / 5.48
e0.430 BSC10.92 BSC
L0.780 / 0.80019.80 / 20.30
L1- / 0.177- / 4.49
ØP0.140 / 0.1443.55 / 3.65
Q0.212 / 0.2445.38 / 6.19
S0.242 BSC6.14 BSC
b0.039 / 0.0550.99 / 1.40
b20.065 / 0.0941.65 / 2.39
b40.102 / 0.1352.59 / 3.43
c0.015 / 0.0350.38 / 0.89
D1- / 0.515- / 13.07
D20.020 / 0.0530.51 / 1.35
E10.530 / -13.45 / -
Ø P1- / 0.29- / 7.39

A schematic diagram of the TO-247 outline is provided, showing the pin numbering (1, 2, 3) and key reference points for dimensions.

Product Marking

The product marking on the DSEI30-10A typically includes:

  • Logo: IXYS
  • Part Number: DSEI30-10A
  • Date Code: e.g., yywwZ
  • Lot#: e.g., 1234
  • Location: Indicated on the component body.

Ordering Information

Ordering Details
StandardOrdering NumberMarking on ProductDelivery ModeQuantityCode No.
DSEI30-10ADSEI30-10ATube30434477

Similar Parts

Similar PartPackageVoltage class
DSEI30-10ARISOPLUS247 (2)1000
DSEI30-12ATO-247AD (2)1200

Equivalent Circuits for Simulation

Simplified equivalent circuits are provided for simulation purposes:

  • Fast Diode Model: Includes V0 max (threshold voltage) and R0 max (slope resistance).
Equivalent Circuit Parameters
ParameterValueUnit
V0 max (threshold voltage)1.53V
R0 max (slope resistance *)13

* on die level, TVJ = 150°C

Performance Graphs

Fig. 1 Forward current IF versus max. forward voltage drop VF

This graph plots Forward Current (IF) in Amperes on the Y-axis against Forward Voltage (VF) in Volts on the X-axis. Multiple curves are shown, representing different Junction Temperatures (TvJ) at 25°C, 100°C, and 150°C.

Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt

This graph plots Reverse Recovery Charge (Qr) in microcoulombs (µC) on the Y-axis against the negative rate of change of forward current (-diF/dt) in Amperes per microsecond (A/µs) on the X-axis. Curves are shown for different forward currents (IF) (15A, 30A, 60A) and a reverse voltage (VR) of 540V at a junction temperature of 100°C.

Fig. 3 Typ. peak reverse current IRM versus -diF/dt

This graph plots Peak Reverse Current (IRM) in Amperes on the Y-axis against the negative rate of change of forward current (-diF/dt) in Amperes per microsecond (A/µs) on the X-axis. Curves are shown for different forward currents (IF) (15A, 30A, 60A) and a reverse voltage (VR) of 540V at a junction temperature of 100°C.

Fig. 4 Dynamic parameters Qr, IRM versus TvJ

This graph plots Dynamic Parameters (Qr and IRM) on the Y-axis against Junction Temperature (TvJ) in degrees Celsius (°C) on the X-axis. It shows how Qr and IRM vary with temperature.

Fig. 5 Typ. recovery time trr versus -diF/dt

This graph plots Reverse Recovery Time (trr) in nanoseconds (ns) on the Y-axis against the negative rate of change of forward current (-diF/dt) in Amperes per microsecond (A/µs) on the X-axis. Curves are shown for different forward currents (IF) (15A, 30A, 60A) and a reverse voltage (VR) of 540V at a junction temperature of 100°C.

Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt

This graph plots Peak Forward Voltage (VFR) in Volts (V) and Reverse Recovery Time (tfr) in nanoseconds (ns) on the Y-axis against the positive rate of change of forward current (diF/dt) in Amperes per microsecond (A/µs) on the X-axis. Curves are shown for a junction temperature of 125°C and a forward current (IF) of 30A.

Fig. 7 Transient thermal impedance junction to case

This graph plots Transient Thermal Impedance (ZthJC) in K/W on the Y-axis against time (t) in milliseconds (ms) on the X-axis, on a logarithmic scale. It shows the thermal response of the device. A table provides constants for ZthJC calculation.

Constants for ZthJC calculation
iRthi (K/W)ti (s)
10.2000.0018
20.2200.0100
30.0800.5000
40.3000.0900

Disclaimer Notice

Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved. Data according to IEC 60747and per semiconductor unless otherwise specified. 20201013a

Models: DSEI30-10A FRED Fast Recovery Epitaxial And Single Diode, DSEI30-10A, FRED Fast Recovery Epitaxial And Single Diode, Fast Recovery Epitaxial And Single Diode, Recovery Epitaxial And Single Diode, Epitaxial And Single Diode, Single Diode, Diode

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References

PDFCreator 3.1.0.10222; modified using iText 5.5.6 ©2000-2015 iText Group NV (AGPL-version)

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