IXYS DSEI30-10A FRED
Fast Recovery Epitaxial Diode Single Diode
Product Overview
The IXYS DSEI30-10A is a Fast Recovery Epitaxial Diode (FRED) designed for high-frequency switching applications. It features a planar passivated chip, very short recovery time, and improved thermal behavior. This single diode is housed in the industry-standard TO-247 package.
Key Specifications:
- Reverse Voltage (VRRM): 1000 V
- Average Forward Current (IFAV): 30 A
- Reverse Recovery Time (trr): 45 ns
Features / Advantages
- Planar passivated chips
- Low leakage current
- Very short recovery time
- Improved thermal behaviour
- Very low Irm-values
- Very soft recovery behaviour
- Avalanche voltage rated for reliable operation
- Soft reverse recovery for low EMI/RFI
- Low Irm reduces power dissipation within the diode and turn-on loss in the commutating switch.
Applications
- Antiparallel diode for high frequency switching devices
- Antisaturation diode
- Snubber diode
- Free wheeling diode
- Rectifiers in switch mode power supplies (SMPS)
- Uninterruptible power supplies (UPS)
Package Information
Package: TO-247
- Industry standard outline
- RoHS compliant
- Epoxy meets UL 94V-0
Electrical Characteristics
Symbol | Definition | Conditions | min. | typ. | max. | Unit |
---|---|---|---|---|---|---|
VRRM | max. repetitive reverse blocking voltage | TVJ = 25°C | 1000 | V | ||
IR | reverse current, drain current | VR = 1000 V, TVJ = 25°C | 750 | µA | ||
VF | forward voltage drop | IF = 30 A, TVJ = 25°C | 2.36 | V | ||
IFAV | average forward current | TC = 90°C, rectangular d = 0.5 | 30 | A | ||
VF0 | threshold voltage | TVJ = 150°C | 1.53 | V | ||
RF | slope resistance {for power loss calculation only} | 15.5 | mΩ | |||
RthJC | thermal resistance junction to case | 0.8 | K/W | |||
RthCH | thermal resistance case to heatsink | 0.25 | K/W | |||
Ptot | total power dissipation | TC = 25°C | 155 | W | ||
IFSM | max. forward surge current | t = 10 ms; (50 Hz), sine; VR = 0 V | 200 | A | ||
CJ | junction capacitance | VR = 600 V, f = 1 MHz, TVJ = 25°C | 16 | pF | ||
IRM | max. reverse recovery current | IF = 30 A; VR = 540 V, TVJ = 100°C | 13 | A | ||
trr | reverse recovery time | -diF/dt = 200 A/µs, TVJ = 100°C | 150 | ns |
Note: Additional conditions and values for other parameters (e.g., VRRM, IR, VF at different conditions, trr at 25°C) are available in the original document.
Package Dimensions (TO-247)
The TO-247 package is an industry-standard outline for power semiconductors. The dimensions are provided in inches and millimeters.
Sym. | Inches (min./max.) | Millimeter (min./max.) |
---|---|---|
A | 0.185 / 0.209 | 4.70 / 5.30 |
A1 | 0.087 / 0.102 | 2.21 / 2.59 |
A2 | 0.059 / 0.098 | 1.50 / 2.49 |
D | 0.819 / 0.845 | 20.79 / 21.45 |
E | 0.610 / 0.640 | 15.48 / 16.24 |
E2 | 0.170 / 0.216 | 4.31 / 5.48 |
e | 0.430 BSC | 10.92 BSC |
L | 0.780 / 0.800 | 19.80 / 20.30 |
L1 | - / 0.177 | - / 4.49 |
ØP | 0.140 / 0.144 | 3.55 / 3.65 |
Q | 0.212 / 0.244 | 5.38 / 6.19 |
S | 0.242 BSC | 6.14 BSC |
b | 0.039 / 0.055 | 0.99 / 1.40 |
b2 | 0.065 / 0.094 | 1.65 / 2.39 |
b4 | 0.102 / 0.135 | 2.59 / 3.43 |
c | 0.015 / 0.035 | 0.38 / 0.89 |
D1 | - / 0.515 | - / 13.07 |
D2 | 0.020 / 0.053 | 0.51 / 1.35 |
E1 | 0.530 / - | 13.45 / - |
Ø P1 | - / 0.29 | - / 7.39 |
A schematic diagram of the TO-247 outline is provided, showing the pin numbering (1, 2, 3) and key reference points for dimensions.
Product Marking
The product marking on the DSEI30-10A typically includes:
- Logo: IXYS
- Part Number: DSEI30-10A
- Date Code: e.g., yywwZ
- Lot#: e.g., 1234
- Location: Indicated on the component body.
Ordering Information
Standard | Ordering Number | Marking on Product | Delivery Mode | Quantity | Code No. |
---|---|---|---|---|---|
DSEI30-10A | DSEI30-10A | Tube | 30 | 434477 |
Similar Parts
Similar Part | Package | Voltage class |
---|---|---|
DSEI30-10AR | ISOPLUS247 (2) | 1000 |
DSEI30-12A | TO-247AD (2) | 1200 |
Equivalent Circuits for Simulation
Simplified equivalent circuits are provided for simulation purposes:
- Fast Diode Model: Includes V0 max (threshold voltage) and R0 max (slope resistance).
Parameter | Value | Unit |
---|---|---|
V0 max (threshold voltage) | 1.53 | V |
R0 max (slope resistance *) | 13 | mΩ |
* on die level, TVJ = 150°C
Performance Graphs
Fig. 1 Forward current IF versus max. forward voltage drop VF
This graph plots Forward Current (IF) in Amperes on the Y-axis against Forward Voltage (VF) in Volts on the X-axis. Multiple curves are shown, representing different Junction Temperatures (TvJ) at 25°C, 100°C, and 150°C.
Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt
This graph plots Reverse Recovery Charge (Qr) in microcoulombs (µC) on the Y-axis against the negative rate of change of forward current (-diF/dt) in Amperes per microsecond (A/µs) on the X-axis. Curves are shown for different forward currents (IF) (15A, 30A, 60A) and a reverse voltage (VR) of 540V at a junction temperature of 100°C.
Fig. 3 Typ. peak reverse current IRM versus -diF/dt
This graph plots Peak Reverse Current (IRM) in Amperes on the Y-axis against the negative rate of change of forward current (-diF/dt) in Amperes per microsecond (A/µs) on the X-axis. Curves are shown for different forward currents (IF) (15A, 30A, 60A) and a reverse voltage (VR) of 540V at a junction temperature of 100°C.
Fig. 4 Dynamic parameters Qr, IRM versus TvJ
This graph plots Dynamic Parameters (Qr and IRM) on the Y-axis against Junction Temperature (TvJ) in degrees Celsius (°C) on the X-axis. It shows how Qr and IRM vary with temperature.
Fig. 5 Typ. recovery time trr versus -diF/dt
This graph plots Reverse Recovery Time (trr) in nanoseconds (ns) on the Y-axis against the negative rate of change of forward current (-diF/dt) in Amperes per microsecond (A/µs) on the X-axis. Curves are shown for different forward currents (IF) (15A, 30A, 60A) and a reverse voltage (VR) of 540V at a junction temperature of 100°C.
Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt
This graph plots Peak Forward Voltage (VFR) in Volts (V) and Reverse Recovery Time (tfr) in nanoseconds (ns) on the Y-axis against the positive rate of change of forward current (diF/dt) in Amperes per microsecond (A/µs) on the X-axis. Curves are shown for a junction temperature of 125°C and a forward current (IF) of 30A.
Fig. 7 Transient thermal impedance junction to case
This graph plots Transient Thermal Impedance (ZthJC) in K/W on the Y-axis against time (t) in milliseconds (ms) on the X-axis, on a logarithmic scale. It shows the thermal response of the device. A table provides constants for ZthJC calculation.
i | Rthi (K/W) | ti (s) |
---|---|---|
1 | 0.200 | 0.0018 |
2 | 0.220 | 0.0100 |
3 | 0.080 | 0.5000 |
4 | 0.300 | 0.0900 |
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions. © 2020 IXYS all rights reserved. Data according to IEC 60747and per semiconductor unless otherwise specified. 20201013a