Manuals+

IXYS DPG30I300PA HiPerFRED High Performance Fast Recovery Diode

Low Loss and Soft Recovery Single Diode

Part Number: DPG30I300PA

Key Specifications:

Diode Symbol: A standard diode symbol is shown, indicating anode (pin 1) and cathode (pin 3).

Features / Advantages

Applications

Package: TO-220

Electrical Characteristics (Ratings)

Symbol Definition Conditions Min. Typ. Max. Unit
VRRSM max. non-repetitive reverse blocking voltage TVJ = 25°C 300 V
VRRM max. repetitive reverse blocking voltage TVJ = 25°C 300 V
IR reverse current, drain current VR = 300 V, TVJ = 25°C 1 µA
VR = 300 V, TVJ = 150°C 0.1 mA
VF forward voltage drop IF = 30 A, TVJ = 25°C 1.35 V
IF = 60 A, TVJ = 25°C 1.66 V
IF = 30 A, TVJ = 150°C 1.08 V
IF = 60 A, TVJ = 150°C 1.43 V
IFAV average forward current TC = 140°C, rectangular d = 0.5 30 A
VF0 threshold voltage TVJ = 175°C 0.70 V
rF slope resistance { for power loss calculation only TVJ = 175°C 11.1 mΩ
RthJC thermal resistance junction to case 0.85 K/W
RthCH thermal resistance case to heatsink 0.5 K/W
Ptot total power dissipation TC = 25°C 175 W
IFSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V 360 A
CJ junction capacitance VR = 150 V, f = 1 MHz 42 pF
IRM max. reverse recovery current IF = 30 A; VR = 200 V, TVJ = 25°C 3 A
IF = 30 A; VR = 200 V, TVJ = 125°C 7 A
trr reverse recovery time IF = 30 A; VR = 200 V, -diF/dt = 200 A/µs, TVJ = 25°C 35 ns
IF = 30 A; VR = 200 V, -diF/dt = 200 A/µs, TVJ = 125°C 55 ns

Package TO-220 Specifications

Symbol Definition Conditions Min. Typ. Max. Unit
IRMS RMS current per terminal 35 A
TVJ virtual junction temperature -55 175 °C
Top operation temperature -55 150 °C
Tstg storage temperature -55 150 °C
Weight 2 g
MD mounting torque 0.4 0.6 Nm
FC mounting force with clip 20 60 N

Product Marking

A diagram shows the typical product marking. It includes 'Part Number' (e.g., DPG30I300PA), 'Logo' (IXYS), 'Date Code' (yywwZ), 'Lot #' (123456), and 'Location'.

Part Description:

Ordering Information

Standard Ordering Number Marking on Product Delivery Mode Quantity Code No.
DPG30I300PA DPG30I300PA Tube 50 505675

Similar Parts

Similar Part Package Voltage class
DPG30I300HA TO-247AD (2) 300
DPF30I300PA TO-220AC (2) 300

Equivalent Circuits for Simulation

An equivalent circuit for simulation is provided for a Fast Diode, showing V0 max (threshold voltage) and R0 max (slope resistance) under the condition TVJ = 175°C.

Parameter Value Unit
V0 max (threshold voltage) 0.7 V
R0 max (slope resistance *) 7.9 mΩ

* on die level

Outlines TO-220 Dimensions

An outline drawing of the TO-220 package is shown, with key dimensions labeled A, A1, A2, b, b2, C, D, E, e, H1, L, L1, ØP, and Q. Pin numbers 1, 3, and 4 are indicated. A supplier option is noted.

Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055
A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
e 5.08 BSC 0.200 BSC
H1 5.85 6.85 0.230 0.270
L 12.70 13.97 0.500 0.550
L1 2.79 5.84 0.110 0.230
ØP 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125

Electrical Characteristics Graphs

Figure 1: Forward Current (IF) versus Forward Voltage (VF)

This graph shows the forward current (IF) in Amperes [A] plotted against the forward voltage (VF) in Volts [V]. Curves are shown for junction temperatures of 150°C and 25°C.

Figure 2: Typ. Reverse Recovery Charge (Qrr) versus -diF/dt

This graph illustrates the typical reverse recovery charge (Qrr) in microcoulombs [µC] as a function of the rate of current fall (-diF/dt) in Amperes per microsecond [A/µs]. Curves are presented for TVJ = 125°C and VR = 200 V.

Figure 3: Typ. Reverse Recovery Current (IRM) versus -diF/dt

This graph displays the typical peak reverse recovery current (IRM) in Amperes [A] against the rate of current fall (-diF/dt) in Amperes per microsecond [A/µs]. Curves are shown for TVJ = 125°C and VR = 200 V, with different forward currents (60 A, 30 A, 15 A).

Figure 4: Typ. Dynamic Parameters Qrr, IRM versus TVJ

This graph plots typical dynamic parameters, reverse recovery charge (Qrr) and peak reverse recovery current (IRM), against junction temperature (TVJ) in degrees Celsius [°C]. The data corresponds to IF = 30 A and VR = 200 V.

Figure 5: Typ. Reverse Recovery Time (trr) versus -diF/dt

This graph shows the typical reverse recovery time (trr) in nanoseconds [ns] plotted against the rate of current fall (-diF/dt) in Amperes per microsecond [A/µs]. Curves are provided for different forward currents (60 A, 30 A, 15 A) at TVJ = 125°C and VR = 200 V.

Figure 6: Typ. Forward Recovery Voltage (VFR) & tfr versus diF/dt

This graph illustrates the typical forward recovery voltage (VFR) in Volts [V] and the forward recovery time (tfr) in nanoseconds [ns] as a function of the rate of current rise (diF/dt) in Amperes per microsecond [A/µs]. Data is shown for IF = 30 A at TVJ = 125°C and VR = 200 V.

Figure 7: Typ. Recovery Energy (Erec) versus -diF/dt

This graph displays the typical recovery energy (Erec) in microjoules [µJ] against the rate of current fall (-diF/dt) in Amperes per microsecond [A/µs]. Curves are presented for different forward currents (15 A, 30 A, 60 A) at TVJ = 125°C and VR = 200 V.

Figure 8: Transient Thermal Impedance Junction to Case (ZthJC)

This graph shows the transient thermal impedance (ZthJC) in Kelvin per Watt [K/W] as a function of time [s]. A table provides specific RthJC values and their corresponding time constants (t1).

RthJC [K/W] t1 [s]
0.139 0.00028
0.176 0.0033
0.305 0.028
0.23 0.17

Disclaimer Notice

Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXYS reserves the right to change limits, conditions and dimensions.

© 2020 IXYS all rights reserved

Data according to IEC 60747 and per semiconductor unless otherwise specified

Models: DPG30I300PA High Performance Fast Recovery Diode, DPG30I300PA, High Performance Fast Recovery Diode, Performance Fast Recovery Diode, Fast Recovery Diode, Recovery Diode, Diode

File Info : application/pdf, 5 Pages, 155.75KB

PDF preview unavailable. Download the PDF instead.

media

References

PDFCreator 3.1.0.10222; modified using iText 5.5.6 ©2000-2015 iText Group NV (AGPL-version)

Related Documents

Preview IXYS DSEP60-12AR HiPerFRED High Performance Fast Recovery Diode Datasheet
Datasheet for the IXYS DSEP60-12AR HiPerFRED single diode, featuring high performance, low loss, and soft recovery. Includes electrical ratings, mechanical dimensions, and application information for switch mode power supplies and high frequency switching devices.
Preview IXYS DSEI30-10A FRED: Fast Recovery Epitaxial Diode Datasheet
Technical datasheet for the IXYS DSEI30-10A FRED (Fast Recovery Epitaxial Diode) single diode. This component features high voltage (1000V), fast recovery time (45ns), and is housed in a TO-247 package. The document details its electrical characteristics, features, applications, package dimensions, and performance graphs.
Preview IXYS DSEP60-12A HiPerFRED Fast Recovery Diode Datasheet
Technical datasheet for the IXYS DSEP60-12A HiPerFRED single diode, featuring high performance, low loss, and soft recovery characteristics. Includes electrical ratings, package dimensions, and performance graphs.
Preview IXYS DSEP30-12A HiPerFRED Fast Recovery Diode Datasheet
Datasheet for the IXYS DSEP30-12A HiPerFRED single diode, featuring high performance, fast recovery, low loss, and soft recovery characteristics. Ideal for high-frequency switching applications, SMPS, and UPS systems. Includes detailed specifications, features, applications, and package information for the TO-247 package.
Preview IXYS DSEP15-06A HiPerFRED Fast Recovery Diode Datasheet
Datasheet for the IXYS DSEP15-06A HiPerFRED diode, featuring high performance, fast recovery, low loss, and soft recovery characteristics. Ideal for high-frequency switching, SMPS, and UPS applications.
Preview IXYS DSEI36-06AS FRED Fast Recovery Epitaxial Diode Datasheet
Technical datasheet for the IXYS DSEI36-06AS FRED Fast Recovery Epitaxial Diode. This component features planar passivated chips, low leakage current, very short recovery time, and improved thermal behavior. It is suitable for applications such as high-frequency switching devices, SMPS, and UPS. The datasheet details electrical, thermal, and mechanical specifications, along with package information and graphical data.
Preview IXYS DNA30E2200PA High Voltage Standard Rectifier Datasheet
Technical datasheet for the IXYS DNA30E2200PA, a high voltage standard rectifier with TO-220 package. Features include 2200V VRRM, 30A IFAV, low leakage, and low forward voltage drop.
Preview IXYS MCC95-08io1B Thyristor Module Datasheet
Technical datasheet for the IXYS MCC95-08io1B Thyristor Module, detailing its features, applications, electrical ratings, package information, and performance characteristics.