Product Disclaimer for Littelfuse Electronic Components
Owner's Manual for Littelfuse models including: DNA30E2200PA, DNA30E2200PA High Voltage Standard Rectifier, DNA30E2200PA, High Voltage Standard Rectifier, Voltage Standard Rectifier, Standard Rectifier, Rectifier
DNA30E2200PA Littelfuse - РКС Компоненти - РАДІОМАГ
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DocumentDocumentHigh Voltage Standard Rectifier Single Diode Part number DNA30E2200PA 1 3 DNA30E2200PA VRRM = 2200 V I FAV = 30 A VF = 1.24 V Backside: anode Features / Advantages: Planar passivated chips Very low leakage current Very low forward voltage drop Improved thermal behaviour Applications: Diode for main rectification For single and three phase bridge configurations Package: TO-220 Industry standard outline RoHS compliant Epoxy meets UL 94V-0 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d Downloaded from Arrow.com. Rectifier Symbol VRSM VRRM IR VF I FAV Definition Conditions max. non-repetitive reverse blocking voltage max. repetitive reverse blocking voltage reverse current forward voltage drop average forward current VR = 2200 V VR = 2200 V IF = 30 A IF = 60 A IF = 30 A IF = 60 A TC = 140°C rectangular d = 0.5 VF0 rF R thJC R thCH Ptot I FSM threshold voltage slope resistance for power loss calculation only thermal resistance junction to case thermal resistance case to heatsink total power dissipation max. forward surge current t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine I²t value for fusing t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine CJ junction capacitance VR = 700 V; f = 1 MHz DNA30E2200PA TVJ = 25°C TVJ = 25°C TVJ = 25°C TVJ = 150°C TVJ = 25°C TVJ = 150 °C TVJ = 175°C Ratings min. typ. max. Unit 2300 V 2200 V 40 µA 1.5 mA 1.26 V 1.53 V 1.24 V 1.63 V 30 A TVJ = 175°C TC = 25°C TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 45°C VR = 0 V TVJ = 150°C VR = 0 V TVJ = 25°C 0.83 V 13.4 m 0.7 K/W 0.5 K/W 210 W 370 A 400 A 315 A 340 A 685 A²s 665 A²s 495 A²s 480 A²s 7 pF IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Downloaded from Arrow.com. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d Package TO-220 Symbol I RMS TVJ Top Tstg Weight Definition RMS current virtual junction temperature operation temperature storage temperature MD mounting torque F C mounting force with clip Product Marking Part Number Logo Date Code Lot # Location XXXXXX yywwZ 123456 Conditions per terminal DNA30E2200PA Ratings min. typ. max. Unit 35 A -55 175 °C -55 150 °C -55 150 °C 2 g 0.4 0.6 Nm 20 60 N Part description D = Diode N = High Voltage Standard Rectifier A = (>= 2000V) 30 = Current Rating [A] E = Single Diode 2200 = Reverse Voltage [V] PA = TO-220AC (2) Ordering Standard Ordering Number DNA30E2200PA Marking on Product DNA30E2200PA Delivery Mode Tube Quantity Code No. 50 507762 Similar Part DNA30E2200PZ DNA30EM2200PZ DNA30E2200FE DNA30E2200IY Package TO-263AB (D2Pak) (2HV) TO-263AB (D2Pak) (2HV) i4-Pac (2HV) TO-262 (2HV) (I2PAK) Voltage class 2200 2200 2200 2200 Equivalent Circuits for Simulation I V0 R0 Rectifier V 0 max R0 max threshold voltage slope resistance * 0.83 10.2 * on die level T VJ = 175°C V m IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Downloaded from Arrow.com. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d Outlines TO-220 = supplier option E ØP 4 1 3 2x b2 2x b e L1 L Q D H1 A A1 C A2 DNA30E2200PA Dim. Millimeter Min. Max. A 4.32 4.82 A1 1.14 1.39 A2 2.29 2.79 b 0.64 1.01 b2 1.15 1.65 C 0.35 0.56 D 14.73 16.00 E 9.91 10.66 e 5.08 BSC H1 5.85 6.85 L 12.70 13.97 L1 2.79 5.84 ØP 3.54 4.08 Q 2.54 3.18 Inches Min. Max. 0.170 0.045 0.090 0.190 0.055 0.110 0.025 0.040 0.045 0.065 0.014 0.022 0.580 0.630 0.390 0.200 0.230 0.420 BSC 0.270 0.500 0.550 0.110 0.230 0.139 0.161 0.100 0.125 1 3 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Downloaded from Arrow.com. Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d DNA30E2200PA Rectifier 60 300 103 VR = 0 V 40 IF 250 IFSM TVJ = 45°C [A] 20 [A] 200 TVJ = 150°C TVJ = 150°C TVJ = 125°C TVJ = 25°C 0 0.5 1.0 1.5 2.0 VF [V] Fig. 1 Forward current versus voltage drop per diode 50 Hz, 80% VRRM 150 0.001 0.01 0.1 1 t [s] Fig. 2 Surge overload current I2t [A2s] TVJ = 45°C TVJ = 150°C 102 1 2 3 4 5 6 7 8 910 t [ms] Fig. 3 I2t versus time per diode 50 40 30 Ptot dc = 1 0.5 0.4 0.33 0.17 0.08 20 [W] 10 RthKA = 0.6 K/W 0.8 K/W 1.0 K/W 2.0 K/W 4.0 K/W 8.0 K/W 40 30 IF(AV)M 20 [A] 10 dc = 1 0.5 0.4 0.33 0.17 0.08 0 0 10 20 30 0 25 50 75 100 125 150 175 200 IF(AV)M [A] Tamb [°C] Fig. 4 Power dissipation versus direct output current and ambient temperature 0.8 0 0 25 50 75 100 125 150 175 200 TC [°C] Fig. 5 Max. forward current versus case temperature 0.6 ZthJC 0.4 [K/W] 0.2 0.0 1 10 100 t [ms] Fig. 6 Transient thermal impedance junction to case 1000 10000 Constants for ZthJC calculation: i Rthi (K/W) ti (s) 1 0.03 0.0003 2 0.072 0.0065 3 0.131 0.027 4 0.367 0.105 5 0.1 0.8 IXYS reserves the right to change limits, conditions and dimensions. © 2019 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20191129d Downloaded from Arrow.com.