Overview
Product: Thyristor Module
Configuration: Phase leg
Part Number: MCC95-08io1B
Diagram: A schematic diagram illustrates a phase leg configuration for a thyristor module. Terminals are numbered 1 through 7. The backside of the module is indicated as isolated.
Features / Advantages:
- Thyristor for line frequency
- Planar passivated chip
- Long-term stability
- Direct Copper Bonded Al2O3-ceramic
Applications:
- Line rectifying 50/60 Hz
- Softstart AC motor control
- DC Motor control
- Power converter
- AC power control
- Lighting and temperature control
Package: TO-240AA
- Isolation Voltage: 4800 V~
- Industry standard outline
- RoHS compliant
- Soldering pins for PCB mounting
- Base plate: DCB ceramic
- Reduced weight
- Advanced power cycling
Electrical Ratings
| Symbol | Definition | Conditions | min. | typ. | max. | Unit | |
|---|---|---|---|---|---|---|---|
| VRSM/DSM | max. non-repetitive reverse/forward blocking voltage | TVJ = 25°C | 900 | V | |||
| VRRM/DRM | max. repetitive reverse/forward blocking voltage | TVJ = 25°C | 800 | V | |||
| IR/D | reverse current, drain current | VR/D = 800 V | TVJ = 25°C | 200 | µA | ||
| VR/D = 800 V | TVJ = 125°C | 5 | mA | ||||
| VT | forward voltage drop | IT = 150 A | TVJ = 25°C | 1.29 | V | ||
| IT = 300 A | 1.50 | V | |||||
| IT = 150 A | TVJ = 125°C | 1.28 | V | ||||
| IT = 300 A | 1.70 | V | |||||
| ITAV | average forward current | IT = 116 A | TC = 85°C | TVJ = 125°C | 116 | A | |
| IT(RMS) | RMS forward current | 180° sine | 182 | A | |||
| VT0 | threshold voltage | } for power loss calculation only | TVJ = 125°C | 0.85 | V | ||
| rT | slope resistance | 2.4 | mΩ | ||||
| RthJC | thermal resistance junction to case | 0.22 | K/W | ||||
| RthCH | thermal resistance case to heatsink | 0.2 | K/W | ||||
| Ptot | total power dissipation | TC = 25°C | 455 | W | |||
| ITSM | max. forward surge current | t = 10 ms; (50 Hz), sine | TVJ = 45°C | 2.25 | kA | ||
| t = 8,3 ms; (60 Hz), sine | VR = 0 V | 2.43 | kA | ||||
| t = 10 ms; (50 Hz), sine | TVJ = 125°C | 1.92 | kA | ||||
| t = 8,3 ms; (60 Hz), sine | VR = 0 V | 2.07 | kA | ||||
| I²t | value for fusing | t = 10 ms; (50 Hz), sine | TVJ = 45°C | 25.3 | kA²s | ||
| t = 8,3 ms; (60 Hz), sine | VR = 0 V | 24.6 | kA²s | ||||
| t = 10 ms; (50 Hz), sine | TVJ = 125°C | 18.3 | kA²s | ||||
| t = 8,3 ms; (60 Hz), sine | VR = 0 V | 17.7 | kA²s | ||||
| CJ | junction capacitance | VR = 400V f = 1 MHz | TVJ = 25°C | 119 | pF | ||
| PGM | max. gate power dissipation | tP = 30 µs | TC = 125°C | 10 | W | ||
| PGAV | average gate power dissipation | tP = 300 µs | 5 | W | |||
| (di/dt)cr | critical rate of rise of current | TVJ = 125°C; f = 50 Hz; repetitive, IT = 250 A | 0.5 | W | |||
| tP = 200 µs; diG/dt = 0.45 A/µs; | 150 | A/µs | |||||
| (dv/dt)cr | critical rate of rise of voltage | IG = 0.45A; VD = 2/3 VDRM | non-repet., IT = 116 A | 500 | A/µs | ||
| VD = 2/3 VDRM | TVJ = 125°C | 1000 | V/µs | ||||
| VGT | gate trigger voltage | RGK = ∞; method 1 (linear voltage rise) | |||||
| VD = 6 V | TVJ = 25°C | 2.5 | V | ||||
| TVJ = -40°C | 2.6 | V | |||||
| IGT | gate trigger current | VD = 6 V | TVJ = 25°C | 150 | mA | ||
| TVJ = -40°C | 200 | mA | |||||
| VGD | gate non-trigger voltage | VD = 2/3 VDRM | TVJ = 125°C | 0.2 | V | ||
| IGD | gate non-trigger current | 10 | mA | ||||
| IL | latching current | tP = 10 µs | TVJ = 25°C | 450 | mA | ||
| IH | holding current | IG = 0.45A; diG/dt = 0.45 A/µs | |||||
| VD = 6 V RGK = ∞ | TVJ = 25°C | 200 | mA | ||||
| tgd | gate controlled delay time | VD = 1/2 VDRM | TVJ = 25°C | 2 | µs | ||
| IG = 0.45A; diG/dt = 0.45 A/µs | |||||||
| tq | turn-off time | VR = 100 V; IT = 150A; VD = 2/3 VDRM TVJ = 100 °C | 185 | µs | |||
| di/dt = 10 A/µs dv/dt = 20 V/µs tP = 200 µs |
Package and Ordering Information
Package: TO-240AA
| Symbol | Definition | Conditions | min. | typ. | max. | Unit |
|---|---|---|---|---|---|---|
| IRMS | RMS current | per terminal | 200 | A | ||
| TVJ | virtual junction temperature | -40 | 125 | °C | ||
| Top | operation temperature | -40 | 100 | °C | ||
| Tstg | storage temperature | -40 | 125 | °C | ||
| Weight | 81 | g | ||||
| MD | mounting torque | 2.5 | 4 | Nm | ||
| MT | terminal torque | 2.5 | 4 | Nm | ||
| dSPP/APP | creepage distance on surface | striking distance through air | terminal to terminal | 13.0 | 9.7 | mm | |
| dSPB/APB | terminal to backside | 16.0 | 16.0 | mm | ||
| VISOL | isolation voltage | t = 1 second | 4800 | V | ||
| t = 1 minute | 50/60 Hz, RMS; ISOL ≤ 1 mA | 4000 | V |
Diagram: Outline drawing of the TO-240AA package with dimensions labeled in millimeters. Includes top view showing terminal numbering (1-7) and side views showing overall dimensions. The drawing specifies general tolerance according to DIN ISO 2768 class "c".
Optional Accessories: Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red. Available types are ZY 200L (Left for pin pair 4/5) and ZY 200R (Right for pin pair 6/7), compliant with UL 758, style 3751.
Ordering Information:
| Standard | Ordering Number | Marking on Product | Delivery Mode | Quantity | Code No. |
|---|---|---|---|---|---|
| MCC95-08io1B | MCC95-08io1B | Box | 36 | 458139 |
Similar Parts:
| Similar Part | Package | Voltage class |
|---|---|---|
| MCMA110P1200TA | TO-240AA-1B | 1200 |
| MCMA140P1200TA | TO-240AA-1B | 1200 |
Diagram: Equivalent circuit for simulation of a Thyristor, showing V0 max (threshold voltage) and R0 max (slope resistance) at the die level for TVJ = 125°C.
Performance Graphs
Fig. 1: Surge overload current ITSM, IFSM: Crest value, t: duration
This graph illustrates the maximum surge overload current (ITSM) in Amperes versus the duration of the surge (t) in seconds. It shows how the surge capability decreases as the duration increases, with data presented for different conditions like 50 Hz, 80% VRRM, and junction temperatures of 45°C and 125°C.
Fig. 2: I²t versus time (1-10 ms)
This plot shows the I²t value in Ampere-squared seconds against time in milliseconds. It is used to determine the fusing characteristics and energy handling capability of the thyristor over short durations.
Fig. 3: Max. forward current at case temperature
This graph displays the maximum forward current (ITAVM) in Amperes as a function of case temperature (TC) in degrees Celsius. Curves are provided for various conduction angles (180° sine, 120°, 60°, 30°).
Fig. 4: Power dissipation vs. on-state current & ambient temperature (per thyristor or diode)
This chart shows the total power dissipation (Ptot) in Watts versus the average on-state current (ITAVM, IFAVM) in Amperes. It includes curves for different ambient temperatures (Ta) and conduction angles, allowing for thermal analysis.
Fig. 5: Gate trigger characteristics
This graph plots gate voltage (VG) in Volts against gate current (IG) in milliamperes. It illustrates the gate trigger characteristics for different junction temperatures (TVJ) and includes curves related to gate power dissipation (PGAV, PGM) and gate non-trigger voltage (VGD).
Fig. 6: Three phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature
This graph presents the total power dissipation (Ptot) in Watts for a three-phase rectifier bridge configuration (e.g., B6, 3x MCC95) against the average direct output current (IdAVM) in Amperes. It also shows the influence of ambient temperature (Ta) and various thermal resistances (RthKA).
Fig. 7: Gate controlled delay time
This plot shows the gate controlled delay time (tgd) in microseconds versus gate current (IG) in milliamperes. It indicates typical and limit values at a junction temperature of TVJ = 25°C.
Fig. 8: Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature
This graph illustrates the total power dissipation (Ptot) in Watts for a three-phase AC-controller against the RMS output current (IRMS) in Amperes. It considers different ambient temperatures (Ta) and thermal resistances (RthKA).
Fig. 9: Transient thermal impedance junction to case (per thyristor/diode)
This graph shows the transient thermal impedance from junction to case (ZthJC) in K/W as a function of time (t) in seconds. It provides data for various conduction angles (d), with constants for ZthJC calculation also listed.
Fig. 10: Transient thermal impedance junction to heatsink (per thyristor/diode)
This graph displays the transient thermal impedance from junction to heatsink (ZthJK) in K/W versus time (t) in seconds. It includes data for various conduction angles (d), along with constants for ZthJK calculation.
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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