IXYS DSEP60-12A HiPerFRED: High Performance Fast Recovery Diode

Product Overview

Part Number: DSEP60-12A

Description: High Performance Fast Recovery Diode, Low Loss and Soft Recovery, Single Diode.

Key Specifications:

• Reverse Voltage (V_RRM): 1200 V
• Average Forward Current (I_FAV): 60 A
• Reverse Recovery Time (t_rr): 40 ns

Package: TO-247 (Industry standard outline, RoHS compliant, Epoxy meets UL 94V-0)

Diode Symbol: Anode (1) - Diode Symbol - Cathode (3)

Features and Advantages

• Planar passivated chips
• Very low leakage current
• Very short recovery time
• Improved thermal behaviour
• Very low I_RM-values
• Very soft recovery behaviour
• Avalanche voltage rated for reliable operation
• Soft reverse recovery for low EMI/RFI
• Low I_RM reduces:
  • Power dissipation within the diode
  • Turn-on loss in the commutating switch

Applications

• Antiparallel diode for high frequency switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode
• Rectifiers in switch mode power supplies (SMPS)
• Uninterruptible power supplies (UPS)

Electrical Ratings and Characteristics

Package and Mechanical Data

Package: TO-247

Product Marking

The product marking includes:

• Logo: IXYS
• Part Number: DSEP60-12A
• Date Code: yywwZ (e.g., 2206c)
• Lot#: 1234
• Location

Ordering Information

Similar Parts

Equivalent Circuits for Simulation

Fast Diode Model:

• V_{0 max} (threshold voltage): 1.08 V
• R_{0 max} (slope resistance *): 6.8 mΩ (at die level, T_VJ = 175°C)

Outlines and Dimensions (TO-247)

Dimensions are provided in inches and millimeters.

Performance Graphs

The following graphs illustrate typical performance characteristics:

Fig. 1: Forward current I_F versus V_F

This graph shows the relationship between forward current (I_F) in Amperes and forward voltage (V_F) in Volts. Curves are plotted for junction temperatures (T_VJ) of 25°C, 100°C, and 150°C. At 2V, I_F is approximately 40A at 25°C, 30A at 100°C, and 20A at 150°C. At 3V, I_F exceeds 100A for all temperatures shown.

Fig. 2: Typ. reverse recovery charge Q_r versus -di_F/dt

This graph illustrates the typical reverse recovery charge (Q_r) in microcoulombs (µC) as a function of the reverse current fall rate (-di_F/dt) in Amperes per microsecond (A/µs). The data is for V_R = 600 V and I_F = 60 A at T_VJ = 100°C. Q_r decreases as -di_F/dt increases. At -di_F/dt = 200 A/µs, Q_r is approximately 4 µC.

Fig. 3: Typ. peak reverse current I_RM versus -di_F/dt

This graph shows the typical peak reverse current (I_RM) in Amperes as a function of the reverse current fall rate (-di_F/dt) in A/µs. The conditions are V_R = 600 V and I_F = 60 A at T_VJ = 100°C. I_RM increases with increasing -di_F/dt. At -di_F/dt = 200 A/µs, I_RM is approximately 80 A.

Fig. 4: Typ. dynamic parameters Q_r, I_RM versus T_VJ

This graph displays typical values for reverse recovery charge (Q_r) in µC and peak reverse current (I_RM) in A as functions of junction temperature (T_VJ) in °C. The conditions are V_R = 600 V and I_F = 120 A. Both Q_r and I_RM increase with increasing junction temperature. At T_VJ = 100°C, Q_r is approximately 10 µC and I_RM is approximately 20 A.

Fig. 5: Typ. recovery time t_rr versus -di_F/dt

This graph shows the typical reverse recovery time (t_rr) in nanoseconds (ns) as a function of the reverse current fall rate (-di_F/dt) in A/µs. The conditions are V_R = 600 V and I_F = 60 A at T_VJ = 100°C. t_rr decreases as -di_F/dt increases. At -di_F/dt = 200 A/µs, t_rr is approximately 80 ns.

Fig. 6: Typ. peak forward voltage V_FR and t_rr versus -di_F/dt

This graph presents two curves: typical peak forward voltage (V_FR) in Volts and typical reverse recovery time (t_rr) in µs, both as functions of the reverse current fall rate (-di_F/dt) in A/µs. The conditions are V_R = 600 V and I_F = 120 A at T_VJ = 100°C. V_FR decreases slightly with increasing -di_F/dt, while t_rr decreases significantly. At -di_F/dt = 200 A/µs, V_FR is approximately 2.4 V and t_rr is approximately 0.8 µs (800 ns).

Fig. 7: Transient thermal resistance junction to case (Z_thJC) versus time (t)

This graph illustrates the transient thermal resistance junction to case (Z_thJC) in K/W as a function of time (t) in milliseconds (ms). The Z_thJC value decreases significantly as time increases, approaching a steady-state value. The graph includes a table of constants for Z_thJC calculation:

Disclaimer Notice

Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXYS reserves the right to change limits, conditions and dimensions. © 2022 IXYS all rights reserved.

Data according to IEC 60747and per semiconductor unless otherwise specified. Document Revision: 20220610c.