BCW66H: 45V NPN Medium Power Transistor in SOT23
Diodes Incorporated
Features
- BVCEO > 45V
- IC = 800mA High Continuous Collector Current
- Low Saturation Voltage VCE(sat) < 300mV @ 100mA
- Complementary PNP Type: BCW68H
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. "Green" Device
- Automotive-compliant part available (BCW66HQ datasheet)
Mechanical Data
- Package: SOT23
- Package Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208
- Weight: 0.008 grams (Approximate)
Package Diagrams
SOT23 Package: Depicts the SOT23 surface-mount package from top view, showing the three leads labeled E, B, C. A device symbol is also shown with emitter (E), base (B), and collector (C) terminals. The top view pinout clearly indicates the terminal arrangement.
Ordering Information
| Orderable Part Number | Package | Marking | Reel Size (inches) | Tape Width (mm) | Qty. | Carrier |
|---|---|---|---|---|---|---|
| BCW66HTA | SOT23 | EH | 7 | 8 | 3,000 | Reel |
Notes:
- 1. Compliant with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3).
- 2. Refer to Diodes Incorporated's website for definitions of Halogen- and Antimony-free, "Green" and Lead-free.
- 3. "Green" products contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
- 4. Packaging details available at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
The product type marking code is "EH".
Maximum Ratings
(All ratings @ TA = +25°C, unless otherwise specified.)
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCBO | 75 | V |
| Collector-Emitter Voltage | VCEO | 45 | V |
| Emitter-Base Voltage | VEBO | 7 | V |
| Continuous Collector Current | IC | 800 | mA |
| Peak Pulse Current | ICM | 1000 | mA |
| Base Current | IB | 100 | mA |
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Power Dissipation | PD | 310 (Note 5) / 350 (Note 6) | mW |
| Thermal Resistance, Junction to Ambient | RθJA | 403 (Note 5) / 357 (Note 6) | °C/W |
| Thermal Resistance, Junction to Leads | RθJL | 350 (Note 7) | °C/W |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C |
Notes:
- 5. Device mounted on minimum recommended pad layout (1oz copper on FR4 PCB) in still air.
- 6. Device mounted on 15mm x 15mm 1oz copper.
- 7. Thermal resistance from junction to solder-point (at the end of the leads).
Performance Graphs
Figure 1. Derating Curve: Shows maximum power dissipation versus ambient temperature. The curve indicates how power handling capability decreases as temperature increases.
Figure 2. Transient Thermal Impedance: Illustrates thermal impedance as a function of pulse width for single pulse operation. It shows how the device's temperature rises under transient conditions.
Figure 3. Pulse Power Dissipation: Depicts maximum power dissipation versus pulse width for single pulse operation at TA = 25°C. This graph is useful for understanding power handling during short pulses.
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
OFF CHARACTERISTICS
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCES | 75 | V | IC = 10μA | ||
| Collector-Emitter Breakdown Voltage (Base Open) (Note 8) | BVCEO | 45 | V | ICEO = 10mA | ||
| Emitter-Base Breakdown Voltage | BVEBO | 7 | V | IEBO = 10μA | ||
| Collector-Emitter Cutoff Current | ICES | < 1 | 20 | nA | VCES = 45V | |
| Collector-Emitter Cutoff Current | ICES | 20 | μA | VCES = 45V, TA = +150°C | ||
| Emitter-Base Cutoff Current | IEBO | < 1 | 20 | nA | VEBO = 5.6V |
ON CHARACTERISTICS (Note 8)
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Static Forward Current Transfer Ratio | hFE | 80 | 180 | IC = 100μA, VCE = 10V | ||
| Static Forward Current Transfer Ratio | hFE | 250 | 350 | IC = 10mA, VCE = 1V | ||
| Static Forward Current Transfer Ratio | hFE | 100 | IC = 100mA, VCE = 1V | |||
| Static Forward Current Transfer Ratio | hFE | 630 | IC = 500mA, VCE = 2V | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.3 | 0.7 | V | IC = 100mA, IB = 10mA | |
| Collector-Emitter Saturation Voltage | VCE(sat) | V | IC = 500mA, IB = 50mA | |||
| Base-Emitter Saturation Voltage | VBE(sat) | 2 | V | IC = 500mA, IB = 50mA |
SMALL-SIGNAL CHARACTERISTICS (Note 8)
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Transition Frequency | fT | 100 | MHz | IC = 20mA, VCE = 10V, f = 100MHz | ||
| Output Capacitance | Cobo | 8 | 12 | pF | VCB = 10V, f = 1MHz | |
| Input Capacitance | Cibo | 80 | pF | VCB = -0.5V, f = 1MHz | ||
| Noise Figure | N | 2 | 10 | dB | IC = 0.2mA, VCE = 5V, RG = 1kΩ | |
| Turn-On Time | ton | 100 | ns | IC = 150mA | ||
| Turn-Off Time | toff | 400 | ns | IB1 = -IB2 = 15mA, RL = 150Ω |
Note 8: Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
Package Outline Dimensions
Details for SOT23 package outline. Refer to https://www.diodes.com/package-outlines.html for the latest version.
| Dim | Min | Max | Typ |
|---|---|---|---|
| A | 0.37 | 0.51 | 0.40 |
| B | 1.20 | 1.40 | 1.30 |
| C | 2.30 | 2.50 | 2.40 |
| D | 0.89 | 1.03 | 0.915 |
| F | 0.45 | 0.60 | 0.535 |
| G | 1.78 | 2.05 | 1.83 |
| H | 2.80 | 3.00 | 2.90 |
| J | 0.013 | 0.10 | 0.05 |
| K | 0.890 | 1.00 | 0.975 |
| K1 | 0.903 | 1.10 | 1.025 |
| L | 0.45 | 0.61 | 0.55 |
| L1 | 0.25 | 0.55 | 0.40 |
| M | 0.085 | 0.150 | 0.110 |
| a | 0° | 8° |
All Dimensions in mm
Suggested Pad Layout
Layout for SOT23 package. Refer to https://www.diodes.com/package-outlines.html for the latest version.
| Dimensions | Value (in mm) |
|---|---|
| C | 2.0 |
| X | 0.8 |
| X1 | 1.35 |
| Y | 0.9 |
| Y1 | 2.9 |
Important Notice
Diodes Incorporated and its subsidiaries disclaim all warranties, express or implied, regarding the information in this document. The information is provided for illustrative purposes only. Users are responsible for selecting appropriate products, evaluating suitability, ensuring compliance with regulations, and implementing safeguards. Diodes assumes no liability for application-related information or feedback. Products may be covered by patents and trademarks; no license is granted. Products are subject to Diodes' Standard Terms and Conditions of Sale. Diodes' products and technology may not be used in prohibited applications or systems. While efforts are made to ensure accuracy, the document may contain technical inaccuracies or errors. The English version is the definitive one. Unauthorized copying or distribution is prohibited.
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