onsemi MM74HC00 Quad 2-Input NAND Gate

Document Number: MM74HC00/D

Website: www.onsemi.com

General Description

The MM74HC00 NAND gates utilize advanced silicon-gate CMOS technology to achieve operating speeds similar to LS-TTL gates with the low power consumption of standard CMOS integrated circuits. All gates have buffered outputs. All devices have high noise immunity and the ability to drive 10 LS-TTL loads. The 74HC logic family is functionally as well as pin-out compatible with the standard 74LS logic family. All inputs are protected from damage due to static discharge by internal diode clamps to VCC and ground.

Features

Absolute Maximum Ratings

Symbol Parameter Rating Unit
VCC Supply Voltage -0.5 to +6.5 V
VIN DC Input Voltage -0.5 to VCC +0.5 V
VOUT DC Output Voltage -0.5 to VCC +0.5 V
IIK, IOK Clamp Diode Current +20 mA
IOUT DC Output Current, per pin +25 mA
ICC DC VCC or GND Current, per pin +50 mA
TSTG Storage Temperature Range -65 to +150 °C
PD Power Dissipation SOIC TSSOP 1077 833 mW
TL Lead Temperature (Soldering 10 seconds) 260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

1. Unless otherwise specified all voltages are referenced to ground.

Recommended Operating Conditions

Symbol Parameter Min Max Unit
VCC Supply Voltage 2 6 V
VIN, VOUT DC Input or Output Voltage 0 VCC V
TA Operating Temperature Range -40 +85 °C
tr, tf Input Rise or Fall Times VCC = 2.0 V 1000 ns
VCC = 4.5 V 500
VCC = 6.0 V 400

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability.

DC Electrical Characteristics

(Note 2)

Symbol Parameter VCC (V) Conditions Guaranteed Limits Unit
TA = 25°C Typ. TA = -40°C to 85°C TA = -55°C to 125°C
VIH Minimum HIGH Level Input Voltage 2.0 1.5 1.5 1.5 V
4.5 3.15 3.15 3.15
6.0 4.2 4.2 4.2
VIL Maximum LOW Level Input Voltage 2.0 0.5 0.5 0.5 V
4.5 1.35 1.35 1.35
6.0 1.8 1.8 1.8
VOH Minimum HIGH Level Output Voltage 2.0 VIN = VIH or VIL,
IOUT ≤ 20 μΑ
2.0 1.9 1.9 1.9 V
4.5 4.5 4.4 4.4 4.4
6.0 6.0 5.9 5.9 5.9
VOL Maximum LOW Level Output Voltage 4.5 VIN = VIH or VIL,
IOUT ≤ 4.0 mA
4.2 3.98 3.84 3.7 V
6.0 5.7 5.48 5.34 5.2
2.0 VIN = VIH or VIL,
IOUT ≤ 20 μΑ
0 0.1 0.1 0.1 V
4.5 0 0.1 0.1 0.1
6.0 0 0.1 0.1 0.1
4.5 VIN = VIH or VIL,
IOUT ≤ 4.0 mA
0.2 0.26 0.33 0.4
6.0 VIN = VIH or VIL,
IOUT ≤ 5.2 mA
0.2 0.26 0.33 0.4
IIN Maximum Input Current 6.0 VIN = VCC or GND - ±0.1 ±1.0 ±1.0 μΑ
ICC Maximum Quiescent Supply Current 6.0 VIN = VCC or GND,
IOUT = 0 μΑ
- 20 - 40 μΑ

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

2. For a power supply of 5 V ±10% the worst case output voltages (VOH, and VOL) occur for HC at 4.5 V. Thus the 4.5 V values should be used when designing with this supply. Worst case VIH and VIL occur at VCC = 5.5 V and 4.5 V respectively. (The VIH value at 5.5 V is 3.85 V.) The worst case leakage current (IIN, ICC, and IOZ) occur for CMOS at the higher voltage and so the 6.0 V values should be used.

AC Electrical Characteristics

(VCC = 5 V, TA = 25°C, CL = 15 pF, tr = tf = 6 ns)

Symbol Parameter Conditions Typ. Guaranteed Limit Unit
tPHL, tPLH Maximum Propagation Delay 8 15 ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

AC Electrical Characteristics

(VCC = 2.0 V to 6.0 V, CL = 50 pF, tr = tf = 6 ns, unless otherwise specified)

Symbol Parameter VCC (V) Conditions Guaranteed Limits Unit
TA = 25°C Typ. TA = -40°C to 85°C TA = -55°C to 125°C
tPHL, tPLH Maximum Propagation Delay 2.0 45 90 113 134 ns
4.5 9 18 23 27
6.0 8 15 19 23
tTLH, tTHL Maximum Output Rise and Fall Time 2.0 30 75 95 110 ns
4.5 8 15 19 22
6.0 7 13 16 19
CPD Power Dissipation Capacitance (Note 3) (per gate) 20 - - - pF
CIN Maximum Input Capacitance 5 10 10 10 pF

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. CPD determines the no load dynamic power consumption, PD = CPD VCC2 f + ICC VCC, and the no load dynamic current consumption, IS = CPD VCC f + ICC.

Ordering Information

Device Marking Package Shipping
MM74HC00M HC00A SOIC-14 NB (Pb-Free and Halide Free) 55 Units / Tube
MM74HC00MX HC00A TSSOP-14 (Pb-Free and Halide Free) 2500 / Tape & Reel
MM74HC00MTCX HC00A TSSOP-14 (Pb-Free and Halide Free) 2500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

NOTE: All packages are lead free per JEDEC: J-STD-020B standard.

Package Outline: SOIC-14 NB

CASE 751A-03, ISSUE L

Date: 03 FEB 2016

Scale: 1:1

Diagram:

[Diagram showing SOIC-14 package dimensions with labels for D, E, A, A1, A3, b, c, e, H, h, L, M, and angle indicators]

Dimensions (Millimeters/Inches):

DIMMINMAXMINMAX
A1.351.750.0540.068
A10.100.250.0040.010
A30.190.250.0080.010
b0.350.490.0140.019
c0.150.250.0060.010
D8.558.750.3370.344
E3.804.000.1500.157
e1.27 BSC0.050 BSC
H5.806.200.2280.244
h0.250.500.0100.019
L0.401.250.0160.049
M0° 7°0° 7°

Soldering Footprint:

[Diagram showing soldering footprint for SOIC-14 package with dimensions]

Generic Marking Diagram:

[Diagram showing generic marking for SOIC-14 package with placeholders for device code, assembly location, wafer lot, year, work week, and Pb-Free indicator]

*This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "•", may or may not be present. Some products may not follow the Generic Marking.

Package Outline: TSSOP-14 WB

CASE 948G, ISSUE C

Date: 17 FEB 2016

Scale: 2:1

Diagram:

[Diagram showing TSSOP-14 package dimensions with labels for A, B, C, D, F, G, H, J, J1, K, K1, L, M, N, U, V, W, and angle indicators]

Dimensions (Millimeters/Inches):

DIMMINMAXMINMAX
A4.905.100.1930.200
B4.304.500.1690.177
C1.200.047
D0.050.150.0020.006
F0.500.600.0200.024
G0.500.750.0200.030
H0.65 BSC0.026 BSC
J0.090.200.0040.008
J10.090.160.0040.006
K0.190.300.0070.012
K10.190.250.0070.010
L6.40 BSC0.252 BSC
M0° 8°0° 8°

Soldering Footprint:

[Diagram showing soldering footprint for TSSOP-14 WB package with dimensions]

Generic Marking Diagram:

[Diagram showing generic marking for TSSOP-14 WB package with placeholders for device code, assembly location, wafer lot, year, work week, and Pb-Free indicator]

*This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "•", may or may not be present. Some products may not follow the Generic Marking.

Additional Information

Technical Publications:

Technical Library: www.onsemi.com/design/resources/technical-documentation

onsemi Website: www.onsemi.com

Online Support: www.onsemi.com/support

For additional information, please contact your local Sales Representative at www.onsemi.com/support/sales

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