Vishay SiHS90N65E E Series Power MOSFET
Vishay Siliconix
Product Summary
| VDS (V) at Tj max. | 700 |
| RDS(on) (Ω) typ. at 25 °C | VGS = 10 V: 0.025 |
| Qg (nC) max. | 591 |
| Qgs (nC) | 84 |
| Qgd (nC) | 160 |
| Configuration | Single |
Features
- Low figure-of-merit (FOM) Ron x Qg
- Low input capacitance (Ciss)
- Reduced switching and conduction losses
- Ultra low gate charge (Qg)
- Avalanche energy rated (UIS)
- Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Applications
- Server and telecom power supplies
- Switch mode power supplies (SMPS)
- Power factor correction power supplies (PFC)
- Lighting
- High-intensity discharge (HID)
- Fluorescent ballast lighting
- Industrial
- Welding
- Induction heating
- Motor drives
- Battery chargers
- Renewable energy
- Solar (PV inverters)
Ordering Information
| Package | Lead (Pb)-free |
|---|---|
| Super-247 | SiHS90N65E-GE3 |
Absolute Maximum Ratings
(Tc = 25 °C, unless otherwise noted)
| PARAMETER | SYMBOL | LIMIT | UNIT |
|---|---|---|---|
| Drain-source voltage | VDS | 650 | V |
| Gate-source voltage | VGS | ± 30 | V |
| Continuous drain current (TJ = 150 °C) | ID | 87 (Tc = 25 °C) 55 (Tc = 100 °C) |
A |
| Pulsed drain current a | IDM | 323 | A |
| Linear derating factor | 5 | W/°C | |
| Single pulse avalanche energy b | EAS | 1930 | mJ |
| Maximum power dissipation | PD | 625 | W |
| Operating junction and storage temperature range | TJ, Tstg | -55 to +150 | °C |
| Drain-source voltage slope | dV/dt | 41 | V/ns |
| Reverse diode dV/dt d | 4.1 | V/ns | |
| Soldering recommendations (peak temperature) c | 300 (for 10 s) | °C |
Notes:
- a. Repetitive rating; pulse width limited by maximum junction temperature
- b. VDD = 140 V, starting Tj = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 11.7 A
- c. 1.6 mm from case
- d. ISD ≤ ID, dI/dt = 100 A/µs, starting TJ = 25 °C
Thermal Resistance Ratings
| PARAMETER | SYMBOL | TYP. | MAX. | UNIT |
|---|---|---|---|---|
| Maximum junction-to-ambient | RthJA | - | 40 | °C/W |
| Maximum junction-to-case (drain) | RthJC | - | 0.2 | °C/W |
Specifications
(TJ = 25 °C, unless otherwise noted)
Static
| PARAMETER | SYMBOL | TEST CONDITIONS | MIN. | TYP. | MAX. | UNIT |
|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | VDS | VGS = 0 V, ID = 250 μA | 650 | - | - | V |
| VDS temperature coefficient | AVDS/TJ | Reference to 25 °C, ID = 1 mA | - | 0.83 | - | V/°C |
| Gate threshold voltage (N) | VGS(th) | VDS = VGS, ID = 250 μA | 2.0 | - | 4.0 | V |
| Gate-source leakage | IGSS | VGS = ± 20 V | - | - | ± 100 | nA |
| VGS = ± 30 V | - | - | ± 1 | μA | ||
| Zero gate voltage drain current | IDSS | VDS = 650 V, VGS = 0 V | - | - | 1 | μA |
| VDS = 520 V, VGS = 0 V, TJ = 125 °C | - | - | 25 | μA | ||
| Drain-source on-state resistance | RDS(on) | VGS = 10 V, ID = 45 A | - | 0.025 | 0.029 | Ω |
| VDS = 30 V, ID = 45 A | - | 32 | - | S | ||
| Forward transconductance a | gfs | - | - | - | S |
Dynamic
| PARAMETER | SYMBOL | TEST CONDITIONS | TYP. | UNIT |
|---|---|---|---|---|
| Input capacitance | Ciss | VGS = 0 V, VDS = 100 V, f = 300 kHz | 11 826 | pF |
| Output capacitance | Coss | ID = 45 A | 528 | pF |
| Reverse transfer capacitance | Crss | 9 | pF | |
| Effective output capacitance, energy related a | Co(er) | VGS = 0 V, VDS = 0 V to 520 V | 384 | pF |
| Effective output capacitance, time related b | Co(tr) | 1502 | pF | |
| Total gate charge | Qg | VGS = 10 V, ID = 45 A, VDS = 520 V | 394 | nC |
| Gate-source charge | Qgs | 84 | nC | |
| Gate-drain charge | Qgd | 160 | nC | |
| Turn-on delay time | td(on) | VDD = 520 V, ID = 45 A, VGS = 10 V, Rg = 9.1 Ω | 85 | ns |
| Rise time | tr | 152 | ns | |
| Turn-off delay time | td(off) | 323 | ns | |
| Fall time | tf | 267 | ns | |
| Gate input resistance | Rg | f = 1 MHz, open drain | 0.6 | Ω |
Drain-Source Body Diode Characteristics
| PARAMETER | SYMBOL | TEST CONDITIONS | TYP. | MAX. | UNIT |
|---|---|---|---|---|---|
| Continuous source-drain diode current | Is | MOSFET symbol showing the integral reverse p - n junction diode | 87 | - | A |
| Pulsed diode forward current | ISM | 323 | - | A | |
| Diode forward voltage | VSD | TJ = 25 °C, Is = 45 A, VGS = 0 V | 0.9 | 1.2 | V |
| Reverse recovery time | trr | TJ = 25 °C, IF = Is = 45 A, dI/dt = 100 A/µs, VR = 25 V | 971 | 1942 | ns |
| Reverse recovery charge | Qrr | 26 | 52 | μC | |
| Reverse recovery current | IRRM | 42 | - | A |
Notes:
- a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0% to 80 % VDS
- b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0% to 80% VDS
Typical Characteristics
(25 °C, unless otherwise noted)
Figure 1: Typical Output Characteristics
Graph showing Drain-to-Source Current (ID) vs. Drain-to-Source Voltage (VDS) for various Gate-to-Source Voltages (VGS) at TJ = 25 °C.
Figure 2: Typical Output Characteristics
Graph showing Drain-to-Source Current (ID) vs. Drain-to-Source Voltage (VDS) for various Gate-to-Source Voltages (VGS) at TJ = 150 °C.
Figure 3: Typical Transfer Characteristics
Graph showing Drain-to-Source Current (ID) vs. Gate-to-Source Voltage (VGS) at TJ = 25 °C and TJ = 150 °C, with VDS = 14.6 V.
Figure 4: Normalized On-Resistance vs. Temperature
Graph showing Normalized Drain-to-Source On-Resistance (RDS(on)) vs. Junction Temperature (TJ) for ID = 45 A and VGS = 10 V.
Figure 5: Typical Capacitance vs. Drain-to-Source Voltage
Graph showing Capacitance (Ciss, Coss, Crss) vs. Drain-to-Source Voltage (VDS) at VGS = 0 V and f = 300 kHz.
Figure 6: Coss and Eoss vs. VDS
Graph showing Output Capacitance (Coss) and Energy related Output Capacitance (Eoss) vs. Drain-to-Source Voltage (VDS).
Figure 7: Typical Gate Charge vs. Gate-to-Source Voltage
Graph showing Gate Charge (Qg) vs. Gate-to-Source Voltage (VGS) for different Drain-to-Source Voltages (VDS).
Figure 8: Typical Source-Drain Diode Forward Voltage
Graph showing Source-Drain Diode Forward Voltage (VSD) vs. Reverse Drain Current (ISD) at TJ = 25 °C and TJ = 150 °C, with VGS = 0 V.
Figure 9: Maximum Safe Operating Area
Graph showing Drain Current (ID) vs. Drain-to-Source Voltage (VDS) with various operating limits indicated (RDS(on), IDM, BVDSS, pulse limits).
Figure 10: Maximum Drain Current vs. Case Temperature
Graph showing Maximum Drain Current (ID) vs. Case Temperature (TC).
Figure 11: Temperature vs. Drain-to-Source Voltage
Graph showing Drain-to-Source Breakdown Voltage (VDS) vs. Junction Temperature (TJ) for ID = 250 μA.
Figure 12: Normalized Thermal Transient Impedance, Junction-to-Case
Graph showing Normalized Effective Transient Thermal Impedance vs. Pulse Time (s) for various duty cycles and single pulse.
Figure 13: Switching Time Test Circuit
Diagram illustrating the test circuit for switching time measurements.
Figure 14: Switching Time Waveforms
Waveforms illustrating switching times (td(on), tr, td(off), tf).
Figure 15: Unclamped Inductive Test Circuit
Diagram illustrating the test circuit for unclamped inductive switching.
Figure 16: Unclamped Inductive Waveforms
Waveforms illustrating unclamped inductive switching.
Figure 17: Basic Gate Charge Waveform
Waveform illustrating gate charge characteristics.
Figure 18: Gate Charge Test Circuit
Diagram illustrating the test circuit for gate charge measurements.
Figure 19: Peak Diode Recovery dV/dt Test Circuit
Diagram illustrating the test circuit for peak diode recovery dV/dt measurements, including circuit layout considerations and waveform descriptions.
Package Information
TO-274AA (High Voltage) - Version 1: FACILITY CODE = Y
| MILLIMETERS | INCHES | |||
|---|---|---|---|---|
| DIM. | MIN. | MAX. | MIN. | MAX. |
| A | 4.70 | 5.30 | 0.185 | 0.209 |
| A1 | 1.50 | 2.50 | 0.059 | 0.098 |
| A2 | 2.25 | 2.65 | 0.089 | 0.104 |
| b | 1.30 | 1.60 | 0.051 | 0.063 |
| b2 | 1.80 | 2.20 | 0.071 | 0.087 |
| b4 | 3.00 | 3.25 | 0.118 | 0.128 |
| C (1) | 0.38 | 0.89 | 0.015 | 0.035 |
| D | 19.80 | 20.80 | 0.780 | 0.819 |
| D1 | 15.50 | 16.10 | 0.610 | 0.634 |
| D2 | 0.70 | 1.30 | 0.028 | 0.051 |
| E | 15.10 | 16.10 | 0.594 | 0.634 |
| E1 | 13.30 | 13.90 | 0.524 | 0.547 |
| e | 5.45 BSC | 0.215 BSC | ||
| L | 13.70 | 14.70 | 0.539 | 0.579 |
| L1 | 1.00 | 1.60 | 0.039 | 0.063 |
| R | 2.00 | 3.00 | 0.079 | 0.118 |
Notes:
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outer extremes of the plastic body
- Outline conforms to JEDEC® outline to TO-274AA
- (1) Dimension measured at tip of lead
TO-274AA (High Voltage) - Version 2: FACILITY CODE = N
| MILLIMETERS | MILLIMETERS | |||||
|---|---|---|---|---|---|---|
| DIM. | MIN. | MAX. | DIM. | MIN. | MAX. | |
| A | 4.83 | 5.21 | D1 | 16.25 | 17.65 | |
| A1 | 2.29 | 2.54 | D2 | 0.50 | 0.80 | |
| A2 | 1.91 | 2.16 | E | 15.75 | 16.13 | |
| b' | 1.07 | 1.28 | E1 | 13.10 | 14.15 | |
| b | 1.07 | 1.33 | E2 | 3.68 | 5.10 | |
| b1 | 1.91 | 2.41 | E3 | 1.00 | 1.90 | |
| b2 | 1.91 | 2.16 | E4 | 12.38 | 13.43 | |
| b3 | 2.87 | 3.38 | e | 5.44 BSC | ||
| b4 | 2.87 | 3.13 | N | 3 | ||
| c' | 0.55 | 0.65 | L | 19.81 | 20.32 | |
| c | 0.55 | 0.68 | L1 | 3.70 | 4.00 | |
| D | 20.80 | 21.10 | Q | 5.49 | 6.00 | |
Notes:
- Dimensioning and tolerancing per ASME Y14.5M-1994
- Outline conforms to JEDEC® outline to TO-274AD
- Dimensions are measured in mm, angles are in degree
- Metal surfaces are tin plated, except area of cut
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