Vishay IRFP450 Power MOSFET
Vishay Siliconix
Product Summary
| Parameter | Value |
|---|---|
| VDS (V) | 500 |
| RDS(on) (Ω) (VGS = 10 V) | 0.40 |
| Qg (Max.) (nC) | 150 |
| Qgs (nC) | 20 |
| Qgd (nC) | 80 |
| Configuration | Single |
Features
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
Description
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.
Ordering Information
| Package | Lead (Pb)-free |
|---|---|
| TO-247 | IRFP450PbF |
Absolute Maximum Ratings
Tc = 25 °C, unless otherwise noted
| Parameter | Symbol | Limit | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDS | 500 | V |
| Gate-Source Voltage | VGS | ± 20 | V |
| Continuous Drain Current | ID | 14 (Tc = 25 °C, VGS = 10 V) | A |
| 8.7 (Tc = 100 °C) | A | ||
| Pulsed Drain Currenta | IDM | 56 | A |
| Linear Derating Factor | 1.5 | W/°C | |
| Single Pulse Avalanche Energyb | EAS | 760 | mJ |
| Repetitive Avalanche Currenta | IAR | 8.7 | A |
| Repetitive Avalanche Energya | EAR | 19 | mJ |
| Maximum Power Dissipation | PD | 190 (Tc = 25 °C) | W |
| Peak Diode Recovery dV/dtc | dV/dt | 3.5 | V/ns |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to + 150 | °C |
| Soldering Recommendations (Peak Temperature) | for 10 s | 300d | °C |
| Mounting Torque | 6-32 or M3 screw | 10 | lbf·in (1.1 N·m) |
Notes:
- a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- b. VDD = 50 V, starting TJ = 25 °C, L = 7.0 mH, RG = 25 Ω, IAS = 14 A (see fig. 12)
- c. ISD ≤ 14 A, dl/dt ≤ 130 A/µs, VDD ≤ VDS, TJ ≤ 150 °C
- d. 1.6 mm from case
Thermal Resistance Ratings
| Parameter | Symbol | Typ. | Max. | Unit |
|---|---|---|---|---|
| Maximum Junction-to-Ambient | RthJA | 40 | °C/W | |
| Case-to-Sink, Flat, Greased Surface | RthCS | 0.24 | °C/W | |
| Maximum Junction-to-Case (Drain) | RthJC | 0.65 |
Specifications
TJ = 25 °C, unless otherwise noted
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Static | ||||||
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = 250 μA | 500 | V | ||
| VDS Temperature Coefficient | ΔVDS/TJ | Reference to 25 °C, ID = 1 mA | 0.63 | V/°C | ||
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 μA | 2.0 | 4.0 | V | |
| Gate-Source Leakage | IGSS | VGS = ± 20 V | ± 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 500 V, VGS = 0 V | 25 | μA | ||
| VDS = 400 V, VGS = 0 V, TJ = 125 °C | 250 | μA | ||||
| Drain-Source On-State Resistance | RDS(on) | VGS = 10 V, ID = 8.4 Aa | 0.40 | Ω | ||
| Forward Transconductance | gfs | VDS = 50 V, ID = 8.4 Aa | 9.3 | S | ||
| Dynamic | ||||||
| Input Capacitance | Ciss | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2600 | pF | ||
| Output Capacitance | Coss | 720 | pF | |||
| Reverse Transfer Capacitance | Crss | 340 | pF | |||
| Total Gate Charge | Qg | VGS = 10 V, ID = 14 A, VDS = 400 V, see fig. 6 and 13b | 150 | nC | ||
| Gate-Source Charge | Qgs | 20 | nC | |||
| Gate-Drain Charge | Qgd | 80 | nC | |||
| Turn-On Delay Time | td(on) | VDD = 250 V, ID = 14 A, RG = 6.2 Ω, RD = 17 Ω, see fig. 10b | 17 | ns | ||
| Rise Time | tr | 47 | ns | |||
| Turn-Off Delay Time | td(off) | 92 | ns | |||
| Fall Time | tf | 44 | ns | |||
| Internal Drain Inductance | LD | Between lead, 6 mm from package and center of die | 5.0 | nH | ||
| Internal Source Inductance | LS | 13 | nH | |||
| Drain-Source Body Diode Characteristics | ||||||
| Continuous Source-Drain Diode Current | Is | MOSFET symbol showing the integral reverse p-n junction diode | 14 | A | ||
| Pulsed Diode Forward Currenta | ISM | 56 | A | |||
| Body Diode Voltage | VSD | TJ = 25 °C, Is = 14 A, VGS = 0 Vb | 1.4 | V | ||
| Body Diode Reverse Recovery Time | trr | IF = 14 A, dl/dt = 100 A/µsb | 540 | 810 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | 4.8 | 7.2 | µC | ||
| Forward Turn-On Time | ton | Intrinsic turn-on time is negligible (turn-on is dominated by Ls and LD) | ||||
Notes:
- a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
- b. Pulse width ≤ 300 µs; duty cycle ≤ 2%
Typical Characteristics
Tc = 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, Tc = 25 °C
Description: Shows drain current vs. drain-to-source voltage for various gate-to-source voltages at 25°C with a 20µs pulse width.
Fig. 3 - Typical Transfer Characteristics
Description: Shows drain current vs. gate-to-source voltage for different drain-to-source voltages at 25°C.
Fig. 2 - Typical Output Characteristics, Tc = 150 °C
Description: Shows drain current vs. drain-to-source voltage for various gate-to-source voltages at 150°C with a 20µs pulse width.
Fig. 4 - Normalized On-Resistance vs. Temperature
Description: Shows normalized drain-to-source on-resistance vs. junction temperature for a specific gate-source voltage and drain current.
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Description: Shows various capacitances (Ciss, Coss, Crss) vs. drain-to-source voltage.
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Description: Shows source-drain diode forward voltage vs. reverse drain current at different temperatures.
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Description: Shows total gate charge, gate-source charge, and gate-drain charge vs. gate-to-source voltage under specific drain current and drain-source voltage conditions.
Fig. 8 - Maximum Safe Operating Area
Description: Shows the safe operating area for the MOSFET at different case temperatures (25°C and 150°C) and pulse durations.
Fig. 9 - Maximum Drain Current vs. Case Temperature
Description: Shows the maximum continuous drain current vs. case temperature.
Fig. 10a - Switching Time Test Circuit
Description: Circuit diagram for testing switching times, including components like DUT, VDD, RG, and RD.
Fig. 10b - Switching Time Waveforms
Description: Illustrates the voltage and current waveforms during switching, showing turn-on delay (td(on)), rise time (tr), turn-off delay (td(off)), and fall time (tf).
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Description: Graph showing the transient thermal impedance vs. pulse duration for single pulse operation.
Fig. 12a - Unclamped Inductive Test Circuit
Description: Circuit diagram for testing unclamped inductive load conditions.
Fig. 12b - Unclamped Inductive Waveforms
Description: Waveforms illustrating inductor current and VDS during unclamped inductive switching.
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Description: Shows the maximum single pulse avalanche energy vs. drain current at different starting junction temperatures.
Fig. 13a - Basic Gate Charge Waveform
Description: Diagram illustrating the gate charge process, showing different charge components (Qg, Qgs, Qgd) during voltage application.
Fig. 13b - Gate Charge Test Circuit
Description: Circuit diagram used for measuring gate charge characteristics.
Fig. 14 - For N-Channel
Description: Test circuit and waveforms for measuring peak diode recovery dV/dt, including circuit layout considerations and waveform descriptions.
Package Information
TO-247AC (High Voltage)
Version 1: Facility Code = 9
| DIM. | MILLIMETERS MIN. | NOM. | MAX. | NOTES | DIM. | MILLIMETERS MIN. | NOM. | MAX. | NOTES |
|---|---|---|---|---|---|---|---|---|---|
| A | 4.83 | 5.02 | 5.21 | D1 | 16.46 | 16.76 | 17.06 | 5 | |
| A1 | 2.29 | 2.41 | 2.55 | D2 | 0.56 | 0.66 | 0.76 | ||
| A2 | 1.17 | 1.27 | 1.37 | E | 15.50 | 15.70 | 15.87 | 4 | |
| b | 1.12 | 1.20 | 1.33 | E1 | 13.46 | 14.02 | 14.16 | 5 | |
| b1 | 1.12 | 1.20 | 1.28 | E2 | 4.52 | 4.91 | 5.49 | 3 | |
| b2 | 1.91 | 2.00 | 2.39 | 6 | e | 5.46 BSC | |||
| b3 | 1.91 | 2.00 | 2.34 | L | 14.90 | 15.15 | 15.40 | ||
| b4 | 2.87 | 3.00 | 3.22 | 6, 8 | L1 | 3.96 | 4.06 | 4.16 | 6 |
| b5 | 2.87 | 3.00 | 3.18 | ØP | 3.56 | 3.61 | 3.65 | 7 | |
| C | 0.40 | 0.50 | 0.60 | 6 | Ø P1 | 7.19 ref. | |||
| c1 | 0.40 | 0.50 | 0.56 | Q | 5.31 | 5.50 | 5.69 | ||
| D | 20.40 | 20.55 | 20.70 | 4 | S | 5.51 BSC |
Notes:
- (1) Package reference: JEDEC® TO247, variation AC
- (2) All dimensions are in mm
- (3) Slot required, notch may be rounded
- (4) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm per side. These dimensions are measured at the outermost extremes of the plastic body
- (5) Thermal pad contour optional with dimensions D1 and E1
- (6) Lead finish uncontrolled in L1
- (7) Ø P to have a maximum draft angle of 1.5° to the top of the part with a maximum hole diameter of 3.91 mm
- (8) Dimension b2 and b4 does not include dambar protrusion. Allowable dambar protrusion shall be 0.1 mm total in excess of b2 and b4 dimension at maximum material condition
Version 2: Facility Code = Y
| DIM. | MILLIMETERS MIN. | MAX. | NOTES | DIM. | MILLIMETERS MIN. | MAX. | NOTES | |
|---|---|---|---|---|---|---|---|---|
| A | 4.58 | 5.31 | D2 | 0.51 | 1.30 | |||
| A1 | 2.21 | 2.59 | E | 15.29 | 15.87 | |||
| A2 | 1.17 | 2.49 | E1 | 13.72 | ||||
| b | 0.99 | 1.40 | e | 5.46 BSC | ||||
| b1 | 0.99 | 1.35 | Øk | 0.254 | ||||
| b2 | 1.53 | 2.39 | L | 14.20 | 16.25 | |||
| b3 | 1.65 | 2.37 | L1 | 3.71 | 4.29 | |||
| b4 | 2.42 | 3.43 | N | 7.62 BSC | ||||
| b5 | 2.59 | 3.38 | ØP | 3.51 | 3.66 | |||
| C | 0.38 | 0.86 | Ø P1 | 7.39 | ||||
| c1 | 0.38 | 0.76 | Q | 5.31 | 5.69 | |||
| D | 19.71 | 20.82 | R | 4.52 | 5.49 | |||
| D1 | 1 | 3.08 | S | 5.51 BSC |
Notes:
- (1) Dimensioning and tolerancing per ASME Y14.5M-1994
- (2) Contour of slot optional
- (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body
- (4) Thermal pad contour optional with dimensions D1 and E1
- (5) Lead finish uncontrolled in L1
- (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
- (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Version 3: Facility Code = N
| DIM. | MILLIMETERS MIN. | MAX. | NOTES | DIM. | MILLIMETERS MIN. | MAX. | NOTES | |
|---|---|---|---|---|---|---|---|---|
| A | 4.65 | 5.31 | D2 | 0.51 | 1.35 | |||
| A1 | 2.21 | 2.59 | E | 15.29 | 15.87 | |||
| A2 | 1.17 | 1.37 | E1 | 13.46 | 15.70 | |||
| b | 0.99 | 1.40 | e | 5.46 BSC | ||||
| b1 | 0.99 | 1.35 | k | 0.254 | ||||
| b2 | 1.65 | 2.39 | L | 14.20 | 16.10 | |||
| b3 | 1.65 | 2.34 | L1 | 3.71 | 4.29 | |||
| b4 | 2.59 | 3.43 | N | 7.62 BSC | ||||
| b5 | 2.59 | 3.38 | P | 3.56 | 3.66 | |||
| C | 0.38 | 0.89 | P1 | 7.39 | ||||
| c1 | 0.38 | 0.84 | Q | 5.31 | 5.69 | |||
| D | 19.71 | 20.70 | R | 4.52 | 5.49 | |||
| D1 | 13.08 | S | 5.51 BSC |
Notes:
- (1) Dimensioning and tolerancing per ASME Y14.5M-1994
- (2) Contour of slot optional
- (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body
- (4) Thermal pad contour optional with dimensions D1 and E1
- (5) Lead finish uncontrolled in L1
- (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
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