Product Summary
- Continuous Drain-Source Voltage: VDS = 60V
- On-State Resistance: 500mΩ
- Max Nominal Load Current (VIN = 5V): 1.1A
- Min Nominal Load Current (VIN = 5V): 0.7A
- Clamping Energy: 550mJ
Features and Benefits
- Short-Circuit Protection with Auto Restart
- Overvoltage Protection (Active Clamp)
- Thermal Shutdown with Auto Restart
- Overcurrent Protection
- Input Protection (ESD)
- Load Dump Protection (Actively Protects Load)
- Logic-Level Input
- High Continuous Current Rating
- Lead-Free Finish; RoHS Compliant (Note 1 & 2)
- Halogen and Antimony Free. "Green" Device (Note 3)
- AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.
Description
The BSP75NQ-13/BSP75NQTA is a self-protected low-side IntelliFET® MOSFET. It features monolithic overtemperature, overcurrent, overvoltage (active clamp), and ESD-protected logic-level functionality. It is intended as a general-purpose switch.
Applications
- Especially suited for loads with a high in-rush current such as lamps and motors.
- All types of resistive, inductive, and capacitive loads in switching applications.
- µC compatible power switches for 12V and 24V DC applications.
- Automotive rated.
- Replaces electromechanical relays and discrete circuits.
- Linear mode capabilities: The current-limiting protection circuitry is designed to de-activate at low VDS to avoid compromising load current during normal operation. The maximum DC operating current is determined by the thermal capability of the package/board combination, rather than by the protection circuitry. This does not compromise the product's ability to self-protect at low VDS.
Mechanical Data
- Package: SOT223
- Package Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0.
- Moisture Sensitivity: Level 1 per J-STD-020.
- Terminals: Matte Tin Finish e3.
- Weight: 0.112 grams (Approximate).
Package Outline and Pinout
The document includes diagrams for two package types: SOT223 and SOT223 (Type DN). Both show a top view of the component. The SOT223 (Type DN) diagram also includes a pinout view, labeling the pins as IN (Input), D (Drain), and S (Source). A note specifies that the tab is connected to the source pin and must be electrically isolated from the drain pin. It also recommends connecting significant copper to the drain pin for optimal thermal performance.
Ordering Information
| Orderable Part Number | Package | Marking | Reel Size (inches) | Tape Width (mm) | Qty. | Carrier |
|---|---|---|---|---|---|---|
| BSP75NQ-13 | SOT223 | BSP75N | 13 | 12 | 4,000 | Reel |
| BSP75NQTA | SOT223 (Type DN) | BSP75N | 7 | 12 | 1,000 | Reel |
Notes:
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
IntelliFET is a trademark of Diodes Incorporated in the United States and other countries.
Marking Information
The marking information shows the product type marking code 'BSP75N' and date code marking 'YWW', where 'Y' is the last digit of the year and 'WW' is the week code (01 to 53).
Functional Block Diagram
The functional block diagram illustrates the internal structure. Input (IN) is protected by Human Body ESD Protection, Overtemperature Protection, and Overcurrent Protection. These feed into a Logic block, which controls a dv/dt Limitation circuit connected to the MOSFET (Drain 'D' and Source 'S'). Overvoltage Protection is also shown acting on the Drain.
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Continuous Drain-Source Voltage | VDS | 60 | V |
| Drain-Source Voltage for Short-Circuit Protection, VIN = 5V | VDS(SC) | 36 | V |
| Drain-Source Voltage for Short-Circuit Protection, VIN = 10V | VDS(SC) | 20 | V |
| Continuous Input Voltage | VIN | -0.2 to 10 | V |
| Peak Input Voltage | VIN | -0.2 to 20 | V |
| Operating Temperature Range | TJ | -40 to +150 | °C |
| Storage Temperature Range | TSTG | -55 to +150 | °C |
| Power Dissipation at TA = +25°C (Note 5) | PD | 1.5 | W |
| Power Dissipation at TA = +25°C (Note 6) | PD | 0.6 | W |
| Continuous Drain Current @ VIN = 10V, TA = +25°C (Note 5) | ID | 1.3 | A |
| Continuous Drain Current @ VIN = 5V, TA = +25°C (Note 5) | ID | 1.1 | A |
| Continuous Drain Current @ VIN = 5V, TA = +25°C (Note 6) | ID | 0.7 | A |
| Continuous Source Current (Body Diode) (Note 5) | IS | 2.0 | A |
| Pulsed Source Current (Body Diode) (Note 7) | IS | 3.3 | A |
| Unclamped Single Pulse Inductive Energy | EAS | 550 | mJ |
| Load Dump Protection | VLOAD_DUMP | 80 | V |
| Electrostatic Discharge (Human Body Model) | VESD | 4000 | V |
| DIN Humidity Category, DIN 40 040 | — | E | — |
| IEC Climatic Category, DIN IEC 68-1 | — | 40/150/56 | — |
Thermal Resistance
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Junction to Ambient (Note 5) | ROJA | 83 | °C/W |
| Junction to Ambient (Note 7) | ROJA | 45 | °C/W |
| Junction to Ambient (Note 6) | ROJA | 208 | °C/W |
Notes:
5. For a device surface-mounted on 25mm x 25mm x 1.6mm FR-4 board with a high coverage of single sided 2oz weight copper. Allocation of 6cm² copper 33% to source tab and 66% to drain pin with source tab and drain pin electrically isolated.
6. For a device surface-mounted on FR-4 board with the minimum copper required for electrical connections.
7. For a device surface-mounted on FR-4 board as (a) and measured at t ≤ 10s.
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
| Characteristic | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Static Characteristics | ||||||
| Drain-Source Clamp Voltage | VDS(AZ) | 60 | 70 | 75 | V | ID = 10mA |
| Off-State Drain Current | IDSS | — | 0.1 | 3 | µA | VDS = 12V, VIN = 0 |
| Off-State Drain Current | IDSS | — | 3 | 15 | µA | VDS = 32V, VIN = 0 |
| Input Threshold Voltage (Note 8) | VIN(TH) | 1 | 2.1 | — | V | VDS = VGS, ID = 1mA |
| Input Current | IIN | — | 0.7 | 1.2 | mA | VIN = 5V |
| Input Current | IIN | — | 1.5 | 2.7 | mA | VIN = 7V |
| Input Current | IIN | — | 4 | 7 | mA | VIN = 10V |
| Static Drain-Source On-State Resistance | RDS(ON) | — | 520 | 675 | mΩ | VIN = 5V, ID = 0.7A |
| Static Drain-Source On-State Resistance | RDS(ON) | — | 385 | 550 | mΩ | VIN = 10V, ID = 0.7A |
| Current Limit (Note 9) | ID(LIM) | 0.7 | 1.0 | 1.5 | A | VIN = 5V, VDS > 5V |
| Current Limit (Note 9) | ID(LIM) | 1 | 1.8 | 2.3 | A | VIN = 10V, VDS > 5V |
| Dynamic Characteristics | ||||||
| Turn-On Time (VIN to 90% ID) | tON | — | 3 | — | µs | RL = 22Ω, VIN = 0 to 10V, VDD = 12V |
| Turn-Off Time (VIN to 90% ID) | tOFF | — | 13 | — | µs | RL = 22Ω, VIN = 10V to 0, VDD = 12V |
| Slew Rate On (70% to 50% VDD) | -dVDS/dtON | — | 8 | — | V/µs | RL = 22Ω, VIN = 0 to 10V, VDD = 12V |
| Slew Rate Off (50% to 70% VDD) | dVDS/dtON | — | 3.2 | — | V/µs | RL = 22Ω, VIN = 10V to 0, VDD = 12V |
| Protection Functions (Note 10) | ||||||
| Minimum Input Voltage for Overtemperature Protection | VPROT | 4.5 | — | — | V | — |
| Thermal Overload Trip Temperature | TJT | +150 | — | +175 | °C | — |
| Thermal Hysteresis | — | — | +1 | — | °C | — |
| Unclamped Single Pulse Inductive Energy TJ = +25°C | EAS | — | 550 | — | mJ | ID(ISO) = 0.7A, VDD = 32V |
| Unclamped Single Pulse Inductive Energy TJ = +150°C | EAS | — | 200 | — | mJ | ID(ISO) = 0.7A, VDD = 32V |
| Inverse Diode Source-Drain Voltage | VSD | — | — | 1 | V | VIN = 0, -ID = 1.4A |
Notes:
8. Protection features may operate outside spec for VIN < 4.5V.
9. The drain current is limited to a reduced value when VDS exceeds a safe level.
10. Integrated protection functions are designed to prevent IC destruction under fault conditions described in the datasheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous, repetitive operation.
Application Information
The current-limit protection circuitry is designed to de-activate at low VDS to prevent the load current from being unnecessarily restricted during normal operation. The design max DC operating current is therefore determined by the thermal capability of the package/board combination, rather than by the protection circuitry (see Typical Characteristics graphs). This does not compromise the product's ability to self-protect at low VDS. The overtemperature protection circuit trips at a minimum of +150°C. So the available package dissipation reduces as the maximum required ambient temperature increases. This leads to the following maximum recommended continuous operating currents.
Copper Area Characteristics
Minimum Copper Area Characteristics
For minimum copper condition as described in Note 6.
| Max Ambient Temperature TA | Maximum Continuous Current | |
|---|---|---|
| VIN = 5V | VIN = 10V | |
| +25°C | 720mA | 840mA |
| +70°C | 575mA | 670mA |
| +85°C | 520mA | 605mA |
| +125°C | 320mA | 375mA |
Large Copper Area Characteristics
For large copper area as described in Note 5.
| Max Ambient Temperature TA | Maximum Continuous Current | |
|---|---|---|
| VIN = 5V | VIN = 10V | |
| +25°C | 1140mA | 1325mA |
| +70°C | 915mA | 1060mA |
| +85°C | 825mA | 955mA |
| +125°C | 510mA | 590mA |
Graphs and Charts
Safe Operating Area (SOA): The Safe Operating Area (SOA) graph plots Drain Current (ID) against Drain-Source Voltage (VDS). It shows curves for different pulse conditions (DC, 100ms, 10ms, Single Pulse) at TA = 25°C, along with a limit for DC self-protection from -40°C to 150°C. This graph helps determine the maximum allowable operating conditions to prevent device failure.
Derating Curve: The Derating Curve graph shows Maximum Power Dissipation (PD) in Watts versus Ambient Temperature (TA) in °C. It indicates that power dissipation capability decreases linearly as temperature increases, with a note referencing 'See Note 6 Minimum Copper' or 'See Note 5' for large copper areas.
Transient Thermal Impedance: The Transient Thermal Impedance graph plots Thermal Resistance (°C/W) against Pulse Width (s) for various duty cycles (D=0.5, D=0.2, D=0.1, Single Pulse) at TA = 25°C. This helps assess the device's thermal behavior under pulsed load conditions.
Pulse Power Dissipation: The Pulse Power Dissipation graph plots Maximum Power (W) against Pulse Width (s) for a Single Pulse at TA = 25°C. It illustrates the peak power handling capability for short duration pulses.
Typical Output Characteristic: The Typical Output Characteristic graph plots Drain Current (ID) against Drain-Source Voltage (VDS) for different Input Voltages (VIN = 5V to 10V) at TA = 25°C. It shows the 'current limit inactive' and 'current limit active' regions, illustrating how the device behaves under load.
On-State Resistance vs Temperature: This graph plots On-State Resistance (RDS(ON)) in mΩ against Junction Temperature (TJ) in °C. It shows how RDS(ON) increases with temperature for specific conditions (VIN = 5V, ID = 0.7A and VIN = 10V, ID = 0.7A).
On-Resistance vs Input Voltage: The On-Resistance vs Input Voltage graph plots RDS(ON) in mΩ against Input Voltage (VIN) in V. It shows the relationship for a specific load current (IC = 0.7A) at TA = 25°C.
Threshold Voltage vs Temperature: This graph plots Normalized VIN(TH) against Junction Temperature (TJ) in °C. It shows how the threshold voltage changes with temperature for specific conditions (VIN = VDS, IC = 1mA).
Source-Drain Diode Forward Voltage: The Source-Drain Diode Forward Voltage graph plots Source Current (IS) in A against Diode Forward Voltage (VSD) in V. It shows the forward voltage drop characteristics of the internal diode.
Switching Speed: The Switching Speed graph shows Voltage (VDS) in V over Time (s). It illustrates the turn-on and turn-off characteristics of the MOSFET, with parameters like load resistance (RL) and input voltage (VIN) specified.
Package Outline Dimensions
SOT223 Package
| Dim | Min | Max | Typ |
|---|---|---|---|
| A | 1.55 | 1.65 | 1.60 |
| A1 | 0.010 | 0.15 | 0.05 |
| b | 0.60 | 0.80 | 0.70 |
| b1 | 2.90 | 3.10 | 3.00 |
| C | 0.20 | 0.30 | 0.25 |
| D | 6.45 | 6.55 | 6.50 |
| E | 3.45 | 3.55 | 3.50 |
| E1 | 6.90 | 7.10 | 7.00 |
| e | — | — | 4.60 |
| e1 | — | — | 2.30 |
| L | 0.85 | 1.05 | 0.95 |
| Q | 0.84 | 0.94 | 0.89 |
All Dimensions in mm
SOT223 (Type DN) Package
| Dim | Min | Max | Typ |
|---|---|---|---|
| A | — | 1.70 | — |
| A1 | 0.01 | 0.15 | — |
| A2 | 1.50 | 1.68 | 1.60 |
| b | 0.60 | 0.80 | 0.70 |
| b2 | 2.90 | 3.10 | — |
| C | 0.20 | 0.32 | — |
| D | 6.30 | 6.70 | — |
| E | 6.70 | 7.30 | — |
| E1 | 3.30 | 3.70 | — |
| e | — | — | 2.30 |
| e1 | — | — | 4.60 |
| L | 0.85 | — | — |
All Dimensions in mm
Suggested Pad Layout
SOT223 Package
| Dimensions | Value (in mm) |
|---|---|
| C | 2.30 |
| C1 | 6.40 |
| X | 1.20 |
| X1 | 3.30 |
| Y | 1.60 |
| Y1 | 1.60 |
| Y2 | 8.00 |
SOT223 (Type DN) Package
| Dimensions | Value (in mm) |
|---|---|
| C | 2.30 |
| C1 | 6.40 |
| X | 1.20 |
| X1 | 3.30 |
| Y | 1.60 |
| Y1 | 1.60 |
| Y2 | 8.00 |
Important Notice
Diodes Incorporated disclaims all warranties, express or implied, including merchantability and fitness for a particular purpose. Information provided is for illustrative purposes only. Users are responsible for selecting appropriate products, evaluating suitability, ensuring compliance with regulations, and implementing safeguards. Diodes assumes no liability for application-related information or use of products. Products may be covered by patents and trademarks. Diodes' products are subject to Standard Terms and Conditions of Sale. Use of products in prohibited applications or contravention of laws is the sole responsibility of the user. While efforts are made for accuracy, the document may contain errors. Diodes reserves the right to make changes. The English version is the definitive release. Unauthorized copying or distribution is prohibited.
