ZVN4424G N-Channel Enhancement Mode Vertical DMOSFET
DIODES INCORPORATED
Product Summary
| Characteristic | BVDSS | Max RDS(ON) | Max ID (TA = +25°C) |
|---|---|---|---|
| 240V | 5.5Ω @ VGS = 10V | 500mA |
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.
Applications:
- Earth recall and dialing switches
- Electronic hook switches
- Battery-powered equipment
- Telecoms and high-voltage DC-DC converters
Features and Benefits
- 240 Volt BVDS
- Extremely Low RDS(ON) = 4.3Ω
- Low Threshold and Fast Switching
- Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. "Green" Device (Note 3)
- The ZVN4424GQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
- For more information on product definitions, visit: diodes.com/quality/product-definitions/
Mechanical Data
Package: SOT223 (Type DN)
Package Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram Below
Terminals Finish: Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Package and Pinout Description
SOT223 (Type DN) Package:
Top View: Shows the outline of the SOT223 package with three pins on one side and one pin on the opposite side.
Pinout Top View: Identifies the pins as Gate (G), Source (S), and Drain (D). The package has a tab for heatsinking, typically connected to the Drain.
Equivalent Circuit: Depicts a standard N-channel MOSFET symbol with Gate (G), Drain (D), and Source (S) terminals.
Ordering Information
| Orderable Part Number | Package | Qty. | Carrier |
|---|---|---|---|
| ZVN4424GTA | SOT223 (Type DN) | 1,000 | Tape & Reel |
| ZVN4424GQTA | SOT223 (Type DN) | 1,000 | Tape & Reel |
Notes:
- 1. Compliance with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3). All applicable RoHS exemptions applied.
- 2. For information on Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free, visit: diodes.com/quality/lead-free/
- 3. "Green" products contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
- 4. For packaging details, visit: diodes.com/design/support/packaging/diodes-packaging/
Marking Information
The SOT223 (Type DN) package is marked with:
- ZVN 4424: Product Type Marking Code
- YWW: Date Code Marking (Y or Y = Last Digit of Year, e.g., 5 = 2025; WW or WW = Week Code, 01 to 53)
Maximum Ratings
Ratings at TA = +25°C, unless otherwise specified.
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | 240 | V |
| Gate-Source Voltage | VGS | ±40 | V |
| Continuous Drain Current | ID | 500 | mA |
| Pulsed Drain Current | IDM | 1.5 | A |
Thermal Characteristics
Ratings at TA = +25°C, unless otherwise specified.
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Power Dissipation at TA = +25°C | PTOT | 2.5 | W |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C |
Electrical Characteristics
Ratings at TA = +25°C, unless otherwise specified.
OFF CHARACTERISTICS
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 240 | — | — | V | ID = 1mA, VGS = 0 |
| Zero Gate Voltage Drain Current | IDSS | — | 10 | 100 | μA | VDS = 240V, VGS = 0; TA = +125°C |
| Gate-Body Leakage | IGSS | — | 100 | — | nA | VGS = ±40V, VDS = 0 |
| Gate-Source Threshold Voltage | VGS(TH) | 0.8 | 1.3 | 1.8 | V | ID = 1mA, VDS = VGS |
ON CHARACTERISTICS
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| On-State Drain Current (Note 5) | ID(ON) | 0.8 | 1.4 | — | A | VDS = 10V, VGS = 10V |
| Static Drain-Source On-State Resistance (Note 5) | RDS(ON) | 4.3 | 5.5 | 6 | Ω | VGS = 10V, ID = 500mA |
| Forward Transconductance (Notes 5 & 6) | gfs | 0.4 | 0.75 | — | S | VDS = 10V, ID = 0.5A |
DYNAMIC CHARACTERISTICS
| Characteristic | Symbol | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|
| Input Capacitance (Note 6) | Ciss | 110 | 200 | pF | VDS = 25V, VGS = 0 |
| Output Capacitance (Note 6) | Coss | 15 | 25 | pF | VDS = 25V, VGS = 0, f = 1MHz |
| Reverse Transfer Capacitance (Note 6) | Crss | 3.5 | 15 | pF | VDS = 25V, VGS = 0, f = 1MHz |
| Turn-On Delay Time (Notes 6 & 7) | tD(ON) | 2.5 | 5 | ns | VDD = 50V, VGEN = 10V |
| Turn-On Rise Time (Notes 6 & 7) | tR | 5 | 8 | ns | VDD = 50V, VGEN = 10V |
| Turn-Off Delay Time (Notes 6 & 7) | tD(OFF) | 40 | 60 | ns | ID = 0.25A |
| Turn-Off Fall Time (Notes 6 & 7) | tF | 16 | 25 | ns | ID = 0.25A |
Notes:
- 5. Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2%.
- 6. Sample test.
- 7. Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator.
Typical Characteristics
The following graphs illustrate typical performance characteristics of the ZVN4424G:
Saturation Characteristics
This graph shows the relationship between Drain Current (ID) and Drain Source Voltage (VDS) for various Gate Source Voltages (VGS) under pulsed test conditions (300µs). It demonstrates how the MOSFET operates in saturation.
Transfer Characteristics
This graph illustrates the Drain Current (ID) as a function of Gate Source Voltage (VGS) for a fixed Drain Source Voltage (VDS) under pulsed test conditions (300µs). It shows the switching behavior and threshold voltage.
Transconductance vs. Drain Current
This plot shows the transconductance (gfs) of the MOSFET versus Drain Current (ID) under pulsed test conditions (300µs) and a fixed VDS. It indicates how the gain of the transistor changes with current.
Transconductance vs. Gate-Source Voltage
This graph displays the transconductance (gfs) as a function of Gate Source Voltage (VGS) under pulsed test conditions (300µs) and a fixed VDS. It highlights the gate voltage range where transconductance is most effective.
On-resistance vs. Drain Current
This plot shows the Static Drain-Source On-State Resistance (RDS(ON)) versus Drain Current (ID) for different Gate Source Voltages (VGS) under pulsed test conditions (300µs). It is crucial for understanding conduction losses.
Normalized RDS(on) and VGS(th) vs. Temperature
This graph illustrates how the normalized On-State Resistance (RDS(ON)) and Gate-Source Threshold Voltage (VGS(th)) change with Junction Temperature (°C). This is important for thermal design and performance stability.
Capacitance vs. Drain-Source Voltage
This graph shows the parasitic capacitances (Input Capacitance Ciss, Output Capacitance Coss, and Reverse Transfer Capacitance Crss) as a function of Drain Source Voltage (VDS) at VGS=0. These capacitances affect switching speed and high-frequency performance.
Gate Charge vs. Gate-Source Voltage
This plot shows the Gate Charge (Qg) required to switch the MOSFET as a function of Gate Source Voltage (VGS) for different Drain Source Voltages (VDD). It is related to the energy required for switching.
Package Outline Dimensions
Detailed dimensions for the SOT223 (Type DN) package. Please refer to diodes.com/package-outlines.html for the latest version.
| Dim | Min | Max | Typ |
|---|---|---|---|
| A | — | 1.70 | — |
| A1 | 0.01 | 0.15 | — |
| A2 | 1.50 | 1.68 | 1.60 |
| b | 0.60 | 0.80 | 0.70 |
| b2 | 2.90 | 3.10 | — |
| c | 0.20 | 0.32 | — |
| D | 6.30 | 6.70 | — |
| E | 6.70 | 7.30 | — |
| E1 | 3.30 | 3.70 | — |
| e | — | — | 2.30 |
| e1 | — | — | 4.60 |
| L | 0.85 | — | — |
| All Dimensions in mm | |||
Suggested Pad Layout
Recommended pad layout dimensions for the SOT223 (Type DN) package. Please refer to diodes.com/package-outlines.html for the latest version.
| Dimensions | Value (in mm) |
|---|---|
| C | 2.30 |
| C1 | 6.40 |
| X | 1.20 |
| X1 | 3.30 |
| Y | 1.60 |
| Y1 | 1.60 |
| Y2 | 8.00 |
Important Notice
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