MMBTA13 / MMBTA14 NPN Darlington Transistor in SOT23
Diodes Incorporated
Features
- Ideal for Medium Power Amplification and Switching
- High Current Gain
- Complementary PNP Types: MMBTA63 / MMBTA64
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. "Green" Device
- For automotive applications requiring specific change control (e.g., parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact Diodes Incorporated or your local Diodes representative.
- https://www.diodes.com/quality/product-definitions/
Mechanical Data
- Package: SOT23
- Package Material: Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Matte Tin Finish; Solderable per MIL-STD-202, Method 208
- Weight: 0.008 grams (Approximate)
Ordering Information
Orderable Part Number | Package | Marking | Reel Size (inches) | Tape Width (mm) | Qty. | Carrier |
---|---|---|---|---|---|---|
MMBTA13-7-F | SOT23 | K3D | 7 | 8 | 3000 | Reel |
MMBTA14-7-F | SOT23 | K3D | 7 | 8 | 3000 | Reel |
MMBTA14-13-F | SOT23 | K3D | 13 | 8 | 10,000 | Reel |
Notes:
- No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
- See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free.
- Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + CI) and <1000ppm antimony compounds.
- For packaging details, go to https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
K3D = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (e.g., L = 2024)
M = Month (e.g., N = November)
Date Code Key
Year | 2020 | 2024 | 2025 | 2026 | 2027 | 2028 | 2029 | 2030 | 2031 | 2032 | 2033 | |
---|---|---|---|---|---|---|---|---|---|---|---|---|
Code | H | L | M | N | P | R | S | T | U | V | W | |
Month | Jan | Feb | Mar | Apr | May | Jun | Jul | Aug | Sep | Oct | Nov | Dec |
Code | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | O | N | D |
Absolute Maximum Ratings
Characteristic | Symbol | Value | Unit |
---|---|---|---|
Collector-Base Voltage | VCBO | 30 | V |
Collector-Emitter Voltage | VCEO | 30 | V |
Emitter-Base Voltage | VEBO | 10 | V |
Collector Current | IC | 300 | mA |
Thermal Characteristics
Characteristic | Symbol | Value | Unit |
---|---|---|---|
Collector Power Dissipation (Note 5) | PD | 300 | mW |
Thermal Resistance, Junction to Ambient (Note 5) | RθJA | 417 | °C/W |
Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C |
ESD Ratings (Note 6)
Characteristic | Symbol | Value | Unit | JEDEC Class |
---|---|---|---|---|
Electrostatic Discharge - Human Body Model | ESD HBM | 4000 | V | 3A |
Electrostatic Discharge - Machine Model | ESD MM | 400 | V | C |
Electrostatic Discharge - Charged Device Model | ESD CDM | 1000 | V | IV |
Notes:
- For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state.
- Refer to JEDEC specification JESD22-A114, JESD22-A115 and JESD22-C101.
Electrical Characteristics
Characteristic | Symbol | Min | Typ. | Max | Unit | Test Condition | |
---|---|---|---|---|---|---|---|
OFF CHARACTERISTICS | |||||||
Collector-Emitter Breakdown Voltage (Note 7) | BVCEO | 30 | V | IC = 100μA, VBE = 0V | |||
Collector Cutoff Current | ICBO | 100 | nA | VCB = 30V, IE = 0 | |||
Emitter Cutoff Current | IEBO | 100 | nA | VEB = 10V, IC = 0 | |||
ON CHARACTERISTICS (Note 7) | |||||||
DC Current Gain | hFE | MMBTA13 | 5000 | IC = 10mA, VCE = 5.0V | |||
MMBTA14 | 10,000 | IC = 10mA, VCE = 5.0V | |||||
MMBTA13 | 10,000 | IC = 100mA, VCE = 5.0V | |||||
MMBTA14 | 20,000 | IC = 100mA, VCE = 5.0V | |||||
Collector-Emitter Saturation Voltage | VCE(sat) | 1.5 | V | IC = 100mA, IB = 100μA | |||
Base-Emitter Saturation Voltage | VBE(sat) | 2.0 | V | IC = 100mA, VCE = 5.0V | |||
SMALL SIGNAL CHARACTERISTICS | |||||||
Output Capacitance | Cobo | 8.0 | pF | VCB = 10V, f = 1.0MHz, IE = 0 | |||
Input Capacitance | Cibo | 15 | pF | VEB = 0.5V, f = 1.0MHz, IC = 0 | |||
Transition Frequency | fT | 125 | MHz | VCE = 5.0V, IC = 10mA, f = 100MHz |
Note: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
Typical Electrical Characteristics
Figure 1. Max Power Dissipation vs Ambient Temperature
[Graph showing Power Dissipation (mW) on the y-axis and Ambient Temperature (°C) on the x-axis. The graph shows a decreasing trend, starting at 400mW at 25°C and decreasing to 0mW at 200°C. Note 5 applies.]
Figure 2. Collector Emitter Saturation Voltage vs. Collector Current
[Graph showing VCE(sat) (V) on the y-axis and IC (mA) on the x-axis. Multiple curves are shown for different temperatures: -50°C, 25°C, and 150°C. At 100mA, VCE(sat) is approximately 0.55V at -50°C, 0.75V at 25°C, and 1.05V at 150°C.]
Figure 3. DC Current Gain vs Collector Current
[Graph showing hFE (DC Current Gain) on the y-axis (logarithmic scale) and IC (mA) on the x-axis (logarithmic scale). Multiple curves are shown for different temperatures: -50°C, 25°C, and 150°C. At 10mA, hFE is approximately 10,000 at -50°C, 100,000 at 25°C, and 1,000,000 at 150°C.]
Figure 4. Base Emitter Voltage vs. Collector Current
[Graph showing VBE(on) (V) on the y-axis and IC (mA) on the x-axis. Multiple curves are shown for different temperatures: -50°C, 25°C, and 150°C. At 100mA, VBE(on) is approximately 0.7V at -50°C, 0.85V at 25°C, and 1.1V at 150°C.]
Figure 5. Gain Bandwidth Product vs Collector Current
[Graph showing fT (Gain Bandwidth Product MHz) on the y-axis and IC (mA) on the x-axis. A single curve is shown for VCE = 5V, indicating fT increases with IC, reaching approximately 125MHz at 10mA.]
Note: 5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state.
Package Outline Dimensions
Please see https://www.diodes.com/design/support/packaging/diodes-packaging/ for the latest version.
SOT23
[Diagram of SOT23 package outline with dimensions labeled A through M, K1, L1. A table lists the dimensions for each label.]
Dim | Min | Max | Typ |
---|---|---|---|
A | 0.37 | 0.51 | 0.40 |
B | 1.20 | 1.40 | 1.30 |
C | 2.30 | 2.50 | 2.40 |
D | 0.89 | 1.03 | 0.915 |
F | 0.45 | 0.60 | 0.535 |
G | 1.78 | 2.05 | 1.83 |
H | 2.80 | 3.00 | 2.90 |
J | 0.013 | 0.10 | 0.05 |
K | 0.890 | 1.00 | 0.975 |
K1 | 0.903 | 1.10 | 1.025 |
L | 0.45 | 0.61 | 0.55 |
L1 | 0.25 | 0.55 | 0.40 |
M | 0.085 | 0.150 | 0.110 |
α | 0° | 8° | |
All Dimensions in mm |
Suggested Pad Layout
Please see https://www.diodes.com/design/support/packaging/diodes-packaging/ for the latest version.
[Diagram showing suggested pad layout for SOT23 package with dimensions labeled X, Y, X1, Y1. A table lists the values for these dimensions.]
Dimensions | Value (in mm) |
---|---|
C | 2.0 |
X | 0.8 |
Y1 | 1.35 |
X1 | 0.9 |
Y | 2.9 |
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