ADL8124: 1GHz to 20GHz, Low Noise Amplifier with Integrated Temperature Sensor and Enable Function

Data Sheet from Analog Devices

General Description

The ADL8124 is a highly integrated, 1GHz to 20GHz, low noise amplifier (LNA). It features on-chip input and output AC coupling capacitors, an integrated bias inductor, an integrated temperature sensor, and an enable or disable pin (VENBL). The typical gain is 15dB and noise figure is 2.1dB from 10GHz to 17GHz. Key output power metrics include OP1dB of 15dBm, OIP3 of 29dBm, and OIP2 of 43dBm from 10GHz to 17GHz. The quiescent drain current (IDQ) is 55mA operating from a 3.3V supply voltage (VDD), and this current is adjustable. Operation at 5V is also supported. The ADL8124 is fabricated on a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT) process and is housed in an RoHS-compliant, 2mm × 2mm, 8-lead LFCSP package. It is specified for operation over an extended temperature range of -55°C to +125°C.

Features

Single positive supply: 3.3V and IDQ of 55mA
RBIAS drain current adjustment pin
Integrated temperature sensor
Integrated enable and disable function
Gain: 15dB typical from 10GHz to 17GHz
OIP3: 29dBm typical from 10GHz to 17 GHz
Noise figure: 2.1dB typical from 10GHz to 17GHz
Extended operating temperature range: -55°C to +125°C
RoHS-compliant, 2mm × 2mm, 8-lead LFCSP

Applications

Telecommunications
Test instrumentation
Military

Functional Block Diagram

The functional block diagram shows the ADL8124 with pins RBIAS, VTEMP, GND, RFIN, RFOUT, VDD, and VENBL connected to internal blocks including a temperature sensor and the main amplifier circuitry. The diagram illustrates the signal flow and control inputs.

Specifications

1GHz to 2GHz Frequency Range

Parameter	Min	Typ	Unit	Test Conditions/Comments
FREQUENCY RANGE	1	2	GHz
GAIN (S21)	11	13	dB
Gain Variation over Temperature		0.0077	dB/°C
NOISE FIGURE		1.8	dB
RETURN LOSS
Input (S11)		10	dB
Output (S22)		8	dB
OUTPUT
OP1dB	12.5	14.5	dBm
Saturated Power (PSAT)		15.5	dBm
OIP3		28.5	dBm	Measurement taken at output power (POUT) per tone = 0dBm
OIP2		33	dBm	Measurement taken at POUT per tone = 0dBm
POWER ADDED EFFICIENCY (PAE)		17.5	%	Measured at PSAT

2GHz to 10GHz Frequency Range

Parameter	Min	Typ	Unit	Test Conditions/Comments
FREQUENCY RANGE	2	10	GHz
GAIN	11.5	13.5	dB
Gain Variation over Temperature		0.0116	dB/°C
NOISE FIGURE		1.8	dB
RETURN LOSS
Input (S11)		11	dB
Output (S22)		13.5	dB
OUTPUT
OP1dB	13.5	15.5	dBm
Saturated Power (PSAT)		16	dBm
OIP3		29.5	dBm	Measurement taken at POUT per tone = 0dBm
OIP2		28.5	dBm	Measurement taken at POUT per tone = 0dBm
POWER ADDED EFFICIENCY (PAE)		20.5	%	Measured at PSAT

10GHz to 17GHz Frequency Range

Parameter	Min	Typ	Unit	Test Conditions/Comments
FREQUENCY RANGE	10	17	GHz
GAIN	13	15	dB
Gain Variation over Temperature		0.0163	dB/°C
NOISE FIGURE		2.1	dB
RETURN LOSS
Input (S11)		12	dB
Output (S22)		13	dB
OUTPUT
OP1dB	13	15	dBm
Saturated Power (PSAT)		16.5	dBm
OIP3		29	dBm	Measurement taken at POUT per tone = 0dBm
OIP2		43	dBm	Measurement taken at POUT per tone = 0dBm
POWER ADDED EFFICIENCY (PAE)		21.5	%	Measured at PSAT

17GHz to 20GHz Frequency Range

Parameter	Min	Typ	Unit	Test Conditions/Comments
FREQUENCY RANGE	17	20	GHz
GAIN	13	15	dB
Gain Variation over Temperature		0.012	dB/°C
NOISE FIGURE		2.5	dB
RETURN LOSS
Input	13.5		dB
Output	11.5		dB
OUTPUT
OP1dB	11.5		dBm
PSAT	14		dBm
OIP3	26		dBm	Measurement taken at POUT per tone = 0dBm
OIP2	60		dBm	Measurement taken at POUT per tone = 0dBm
PAE	14		%	Measured at PSAT

DC Specifications

Parameter	Min	Typ	Max	Unit	Test Conditions/Comments
SUPPLY CURRENT
Enable		55		mA	VENBL = 3.3V
IDQ = Amplifier Current (IDQ_AMP) + RBIAS Current (IRBIAS)
IDQ_AMP		53.6		mA	VENBL = 3.3V
IRBIAS		1.4		mA	VENBL = 3.3V
Disable
IDQ = IDQ_AMP + IRBIAS		6.6		mA	VENBL = 0V
IDQ_AMP		6.6		mA	VENBL = 0V
IRBIAS		0		mA	VENBL = 0V
SUPPLY VOLTAGE
VDD	2	3.3	6	V

Logic Control (VENBL)

Parameter	Min	Typ	Unit	Test Conditions/Comments
DIGITAL CONTROL INPUT
Low, Amplifier Off State	0	1.1	V
High, Amplifier On State	1.5	VDD	V
VENBL Input Current (IENBL)		0.4	mA	VENBL = 3.3V
SWITCHING TIME
Amplifier On State Time	29		ns	50% of the VENBL rising edge to the output envelope at 90%
Amplifier Off State Time	38		ns	50% of the VENBL falling edge to the output envelope at 10%

Temperature Sensor

Parameter	Min	Typ	Max	Unit	Test Conditions/Comments
VTEMP Voltage (VTEMP) Output Voltage (VOUT), TCASE = 25°C		1.6		V
VTEMP Temperature Coefficient, TCASE = -55°C to +125°C		2.55		mV/°C

Absolute Maximum Ratings

Parameter	Rating
VDD	7.5V
VENBL	VDD
RF Input Power Survivability (RFIN)	28dBm
Continuous Power Dissipation (PDISS)
TCASE = 85°C	0.9W
TCASE = 125°C	0.46W
Temperature
Storage Range	-65°C to +150°C
Operating Range	-55°C to +125°C
Maximum Channel	175°C

Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability.

Thermal Resistance

Thermal performance is directly linked to printed circuit board (PCB) design and operating environment. Careful attention to PCB thermal design is required. θJC is the channel-to-case thermal resistance.

Package Type	θJC	Unit
CP-8-30
TCASE = 25°C	86.1	°C/W
TCASE = 85°C	99.7	°C/W
TCASE = 125°C	108.5	°C/W

1 Thermal resistance varies with operating conditions.

Electrostatic Discharge (ESD) Ratings

The following ESD information is provided for handling of ESD-sensitive devices in an ESD protected area only. Human body model (HBM) per ANSI/ESDA/JEDEC JS-001.

ESD Model	Withstand Threshold (V)	Class
HBM	±500	1B

ESD CAUTION: ESD (electrostatic discharge) sensitive device. Charged devices and circuit boards can discharge without detection. Although this product features patented or proprietary protection circuitry, damage may occur on devices subjected to high energy ESD. Therefore, proper ESD precautions should be taken to avoid performance degradation or loss of functionality.

Pin Configuration and Function Descriptions

Pin Configuration

The pin configuration diagram shows an 8-lead LFCSP package. The pins are labeled RBIAS (1), VTEMP (2), GND (3, 6), RFIN (4), RFOUT (5), VENBL (7), and VDD (8). A ground paddle is also indicated. Notes specify connecting the ground paddle to a ground plane with low electrical and thermal impedance.

Pin Function Descriptions

Pin No.	Mnemonic	Description
1	RBIAS	Bias Setting Resistor. Connect a resistor between RBIAS and VDD to set IDQ.
2	VTEMP	Temperature Sensor Output Voltage.
3, 6	GND	Ground. Connect the GND pins to a ground plane that has low electrical and thermal impedance.
4	RFIN	RF Input. RFIN is AC-coupled and matched to 50Ω.
5	RFOUT	RF Output. The RFOUT pin is AC-coupled and matched to 50Ω.
7	VENBL	Device Enable. An active high digital signal enables the device, and an active low digital signal disables the device.
8	VDD	Drain Bias. Connect the VDD pin to the supply voltage.
	GROUND PADDLE	Ground Paddle. Connect the ground paddle to a ground plane which has a low electrical and thermal impedance.

Interface Schematics

Interface schematics are provided for GND, RFIN, VTEMP, RFOUT and VDD, RBIAS, and VENBL pins, illustrating their typical connection configurations.

Typical Performance Characteristics

Amplifier On State (VENBL = 3.3V)

Figure 9: Broadband Gain and Return Loss vs. Frequency: Plots Gain, S11, and S22 in dB against Frequency (GHz) from 10MHz to 24GHz for VDD = 3.3V, IDQ = 55mA. Gain is approximately 15dB across the band, with S11 and S22 generally below -10dB.

Figure 10: Gain vs. Frequency for Various Temperatures: Shows Gain (dB) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 3.3V, IDQ = 55mA, RBIAS = 1540Ω. Multiple curves represent temperatures from -55°C to +125°C. Gain is relatively flat across frequencies and temperatures, with slight variations at higher frequencies and temperatures.

Figure 11: Gain vs. Frequency for Various Supply Voltages: Displays Gain (dB) vs. Frequency (GHz) from 1GHz to 20GHz for IDQ = 55mA. Multiple curves represent supply voltages from 2.5V to 6V. Gain is consistent across voltages, showing minor differences at higher frequencies.

Figure 12: Broadband Gain and Return Loss vs. Frequency: Plots Gain, S11, and S22 in dB against Frequency (GHz) from 10MHz to 24GHz for VDD = 5V, IDQ = 85mA. Similar to Figure 9, showing stable gain and return loss characteristics.

Figure 13: Gain vs. Frequency for Various Temperatures: Shows Gain (dB) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 5V, IDQ = 85mA, RBIAS = 1731Ω. Multiple curves represent temperatures from -55°C to +125°C. Gain remains stable across frequencies and temperatures.

Figure 14: Gain vs. Frequency for Various Supply Voltages: Displays Gain (dB) vs. Frequency (GHz) from 1GHz to 20GHz for IDQ = 85mA. Multiple curves represent supply voltages from 4V to 6V. Gain is consistent across voltages.

Figure 15: Gain vs. Frequency for Various IDQ Values: Plots Gain (dB) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 3.3V. Curves show various IDQ values from 30mA to 100mA. Gain is relatively consistent across different IDQ settings.

Figure 16: Input Return Loss vs. Frequency for Various Temperatures: Shows Input Return Loss (dB) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 3.3V, IDQ = 55mA, RBIAS = 1540Ω. Multiple curves represent temperatures from -55°C to +125°C. Return loss is generally below -10dB, with some variation at higher frequencies and temperatures.

Figure 17: Input Return Loss vs. Frequency for Various Supply Voltages: Displays Input Return Loss (dB) vs. Frequency (GHz) from 1GHz to 20GHz for IDQ = 55mA. Curves show various supply voltages from 2.5V to 6V. Return loss is stable across different supply voltages.

Figure 18: Gain vs. Frequency for Various IDQ Values: Plots Gain (dB) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 5V. Curves show various IDQ values from 50mA to 100mA. Gain is relatively consistent across different IDQ settings.

Figure 19: Input Return Loss vs. Frequency for Various Temperatures: Shows Input Return Loss (dB) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 5V, IDQ = 85mA, RBIAS = 1731Ω. Multiple curves represent temperatures from -55°C to +125°C. Return loss is generally below -10dB.

Figure 20: Input Return Loss vs. Frequency for Various Supply Voltages: Displays Input Return Loss (dB) vs. Frequency (GHz) from 1GHz to 20GHz for IDQ = 85mA. Curves show various supply voltages from 4V to 6V. Return loss is stable across different supply voltages.

Figure 21: Input Return Loss vs. Frequency for Various IDQ Values: Plots Input Return Loss (dB) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 3.3V. Curves show various IDQ values from 30mA to 100mA. Return loss is generally below -10dB.

Figure 22: Output Return Loss vs. Frequency for Various Temperatures: Shows Output Return Loss (dB) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 3.3V, IDQ = 55mA, RBIAS = 1540Ω. Multiple curves represent temperatures from -55°C to +125°C. Return loss is generally below -10dB.

Figure 23: Output Return Loss vs Frequency for Various Supply Voltages: Displays Output Return Loss (dB) vs. Frequency (GHz) from 1GHz to 20GHz for IDQ = 55mA. Curves show various supply voltages from 2.5V to 6V. Return loss is stable across different supply voltages.

Figure 24: Input Return Loss vs. Frequency for Various IDQ Values: Plots Input Return Loss (dB) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 5V. Curves show various IDQ values from 50mA to 100mA. Return loss is generally below -10dB.

Figure 25: Output Return Loss vs. Frequency for Various Temperatures: Shows Output Return Loss (dB) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 5V, IDQ = 85mA, RBIAS = 1731Ω. Multiple curves represent temperatures from -55°C to +125°C. Return loss is generally below -10dB.

Figure 26: Output Return Loss vs. Frequency for Various Supply Voltages: Displays Output Return Loss (dB) vs. Frequency (GHz) from 1GHz to 20GHz for IDQ = 85mA. Curves show various supply voltages from 4V to 6V. Return loss is stable across different supply voltages.

Figure 27: Output Return Loss vs. Frequency for Various IDQ Values: Plots Output Return Loss (dB) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 3.3V. Curves show various IDQ values from 30mA to 100mA. Return loss is generally below -10dB.

Figure 28: Reverse Isolation vs. Frequency for Various Temperatures: Shows Reverse Isolation (dB) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 3.3V, IDQ = 55mA, RBIAS = 1540Ω. Multiple curves represent temperatures from -55°C to +125°C. Isolation is generally below -15dB and decreases at higher frequencies.

Figure 29: Reverse Isolation vs. Frequency for Various Supply Voltages: Displays Reverse Isolation (dB) vs. Frequency (GHz) from 1GHz to 20GHz for IDQ = 55mA. Curves show various supply voltages from 2.5V to 6V. Isolation is generally below -15dB and shows minor variations with voltage.

Figure 30: Output Return Loss vs. Frequency for Various IDQ Values: Plots Output Return Loss (dB) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 5V. Curves show various IDQ values from 50mA to 100mA. Return loss is generally below -10dB.

Figure 31: Reverse Isolation vs. Frequency for Various Temperatures: Shows Reverse Isolation (dB) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 5V, IDQ = 85mA, RBIAS = 1731Ω. Multiple curves represent temperatures from -55°C to +125°C. Isolation is generally below -15dB and decreases at higher frequencies.

Figure 32: Reverse Isolation vs. Frequency for Various Supply Voltages: Displays Reverse Isolation (dB) vs. Frequency (GHz) from 1GHz to 20GHz for IDQ = 85mA. Curves show various supply voltages from 4V to 6V. Isolation is generally below -15dB and shows minor variations with voltage.

Figure 33: Reverse Isolation vs. Frequency for Various IDQ Values: Plots Reverse Isolation (dB) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 3.3V. Curves show various IDQ values from 30mA to 100mA. Isolation is generally below -15dB and decreases at higher frequencies.

Figure 34: Noise Figure vs. Frequency for Various Temperatures: Shows Noise Figure (dB) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 3.3V, IDQ = 55mA, RBIAS = 1540Ω. Multiple curves represent temperatures from -55°C to +125°C. Noise figure is around 2dB at lower frequencies and increases slightly at higher frequencies and temperatures.

Figure 35: Noise Figure vs. Frequency for Various Supply Voltages: Displays Noise Figure (dB) vs. Frequency (GHz) from 1GHz to 20GHz for IDQ = 55mA. Curves show various supply voltages from 2.5V to 6V. Noise figure is consistent across different supply voltages.

Figure 36: Reverse Isolation vs. Frequency for Various IDQ Values: Plots Reverse Isolation (dB) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 5V. Curves show various IDQ values from 50mA to 100mA. Isolation is generally below -15dB and decreases at higher frequencies.

Figure 37: Noise Figure vs. Frequency for Various Temperatures: Shows Noise Figure (dB) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 5V, IDQ = 85mA, RBIAS = 1731Ω. Multiple curves represent temperatures from -55°C to +125°C. Noise figure is around 2dB at lower frequencies and increases slightly at higher frequencies and temperatures.

Figure 38: Noise Figure vs. Frequency for Various Supply Voltages: Displays Noise Figure (dB) vs. Frequency (GHz) from 1GHz to 20GHz for IDQ = 85mA. Curves show various supply voltages from 4V to 6V. Noise figure is consistent across different supply voltages.

Figure 39: Noise Figure vs. Frequency for Various IDQ Values: Plots Noise Figure (dB) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 3.3V. Curves show various IDQ values from 30mA to 100mA. Noise figure is relatively consistent across different IDQ settings.

Figure 40: OP1dB vs. Frequency for Various Temperatures: Shows OP1dB (dBm) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 3.3V, IDQ = 55mA, RBIAS = 1540Ω. Multiple curves represent temperatures from -55°C to +125°C. OP1dB is around 15dBm at lower frequencies and decreases at higher frequencies.

Figure 41: OP1dB vs. Frequency for Various Supply Voltages: Displays OP1dB (dBm) vs. Frequency (GHz) from 1GHz to 20GHz for IDQ = 55mA. Curves show various supply voltages from 2.5V to 6V. OP1dB is relatively consistent across different supply voltages.

Figure 42: Noise Figure vs. Frequency for Various IDQ Values: Plots Noise Figure (dB) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 5V. Curves show various IDQ values from 50mA to 100mA. Noise figure is relatively consistent across different IDQ settings.

Figure 43: OP1dB vs. Frequency for Various Temperatures: Shows OP1dB (dBm) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 5V, IDQ = 85mA, RBIAS = 1731Ω. Multiple curves represent temperatures from -55°C to +125°C. OP1dB is around 15dBm at lower frequencies and decreases at higher frequencies.

Figure 44: OP1dB vs. Frequency for Various Supply Voltages: Displays OP1dB (dBm) vs. Frequency (GHz) from 1GHz to 20GHz for IDQ = 85mA. Curves show various supply voltages from 4V to 6V. OP1dB is relatively consistent across different supply voltages.

Figure 45: OP1dB vs. Frequency for Various IDQ Values: Plots OP1dB (dBm) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 3.3V. Curves show various IDQ values from 30mA to 100mA. OP1dB is relatively consistent across different IDQ settings.

Figure 46: PSAT vs. Frequency for Various Temperatures: Shows PSAT (dBm) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 3.3V, IDQ = 55mA, RBIAS = 1540Ω. Multiple curves represent temperatures from -55°C to +125°C. PSAT is around 15-16dBm at lower frequencies and decreases at higher frequencies.

Figure 47: PSAT vs. Frequency for Various Supply Voltages: Displays PSAT (dBm) vs. Frequency (GHz) from 1GHz to 20GHz for IDQ = 55mA. Curves show various supply voltages from 2.5V to 6V. PSAT is relatively consistent across different supply voltages.

Figure 48: OP1dB vs. Frequency for Various IDQ Values: Plots OP1dB (dBm) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 5V. Curves show various IDQ values from 50mA to 100mA. OP1dB is relatively consistent across different IDQ settings.

Figure 49: PSAT vs. Frequency for Various Temperatures: Shows PSAT (dBm) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 5V, IDQ = 85mA, RBIAS = 1731Ω. Multiple curves represent temperatures from -55°C to +125°C. PSAT is around 15-16dBm at lower frequencies and decreases at higher frequencies.

Figure 50: PSAT vs. Frequency for Various Supply Voltages: Displays PSAT (dBm) vs. Frequency (GHz) from 1GHz to 20GHz for IDQ = 85mA. Curves show various supply voltages from 4V to 6V. PSAT is relatively consistent across different supply voltages.

Figure 51: PSAT vs. Frequency for Various IDQ Values: Plots PSAT (dBm) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 3.3V. Curves show various IDQ values from 30mA to 100mA. PSAT is relatively consistent across different IDQ settings.

Figure 52: PDISS vs. PIN at TCASE = 85°C: Shows Power Dissipation (PDISS in W) vs. Input Power (PIN in dBm) at 85°C for VDD = 3.3V, RBIAS = 1540Ω. The plot shows PDISS increasing with PIN.

Figure 53: PAE Measured at PSAT vs. Frequency for Various Temperatures: Displays PAE (%) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 3.3V, IDQ = 55mA, RBIAS = 1540Ω. Multiple curves represent temperatures from -55°C to +125°C. PAE is generally highest at mid-band frequencies and decreases at higher frequencies.

Figure 54: PSAT vs. Frequency for Various IDQ Values: Plots PSAT (dBm) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 5V. Curves show various IDQ values from 50mA to 100mA. PSAT is relatively consistent across different IDQ settings.

Figure 55: PDISS vs. PIN at TCASE = 85°C: Shows Power Dissipation (PDISS in W) vs. Input Power (PIN in dBm) at 85°C for VDD = 5V, RBIAS = 1731Ω. The plot shows PDISS increasing with PIN.

Figure 56: PAE Measured at PSAT vs. Frequency for Various Temperatures: Displays PAE (%) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 5V, IDQ = 85mA, RBIAS = 1731Ω. Multiple curves represent temperatures from -55°C to +125°C. PAE is generally highest at mid-band frequencies and decreases at higher frequencies.

Figure 57: PAE Measured at PSAT vs. Frequency for Various Supply Voltages: Plots PAE (%) vs. Frequency (GHz) from 1GHz to 20GHz for IDQ = 55mA. Curves show various supply voltages from 2.5V to 6V. PAE is generally highest at mid-band frequencies.

Figure 58: PAE Measured at PSAT vs. Frequency for Various IDQ Values: Displays PAE (%) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 3.3V. Curves show various IDQ values from 30mA to 70mA. PAE is generally highest at mid-band frequencies.

Figure 59: POUT, Gain, PAE, and Drain Current (IDD) vs. PIN, Power Compression at 5GHz: Shows POUT (dBm), Gain (dB), PAE (%), and IDD (mA) vs. PIN (dBm) at 5GHz for VDD = 3.3V, RBIAS = 1540Ω. This plot illustrates the amplifier's compression characteristics.

Figure 60: PAE Measured at PSAT vs. Frequency for Various Supply Voltages: Plots PAE (%) vs. Frequency (GHz) from 1GHz to 20GHz for IDQ = 85mA. Curves show various supply voltages from 4V to 6V. PAE is generally highest at mid-band frequencies.

Figure 61: PAE Measured at PSAT vs. Frequency for Various IDQ Values: Displays PAE (%) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 5V. Curves show various IDQ values from 50mA to 100mA. PAE is generally highest at mid-band frequencies.

Figure 62: POUT, Gain, PAE, and IDD vs. PIN, Power Compression at 5GHz: Shows POUT (dBm), Gain (dB), PAE (%), and IDD (mA) vs. PIN (dBm) at 5GHz for VDD = 5V, RBIAS = 1731Ω. This plot illustrates the amplifier's compression characteristics.

Figure 63: POUT, Gain, PAE, and IDD vs. PIN, Power Compression at 10GHz: Shows POUT (dBm), Gain (dB), PAE (%), and IDD (mA) vs. PIN (dBm) at 10GHz for VDD = 3.3V, RBIAS = 1540Ω. Illustrates compression characteristics.

Figure 64: POUT, Gain, PAE, and IDD vs. PIN, Power Compression at 15GHz: Shows POUT (dBm), Gain (dB), PAE (%), and IDD (mA) vs. PIN (dBm) at 15GHz for VDD = 3.3V, RBIAS = 1540Ω. Illustrates compression characteristics.

Figure 65: OIP3 vs. Frequency for Various Temperatures: Plots OIP3 (dBm) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 3.3V, IDQ = 55mA, RBIAS = 1540Ω. Multiple curves represent temperatures from -55°C to +125°C. OIP3 is generally high and decreases at higher frequencies.

Figure 66: POUT, Gain, PAE, and IDD vs. PIN, Power Compression at 10GHz: Shows POUT (dBm), Gain (dB), PAE (%), and IDD (mA) vs. PIN (dBm) at 10GHz for VDD = 5V, RBIAS = 1731Ω. Illustrates compression characteristics.

Figure 67: POUT, Gain, PAE, and IDD vs. PIN, Power Compression at 15GHz: Shows POUT (dBm), Gain (dB), PAE (%), and IDD (mA) vs. PIN (dBm) at 15GHz for VDD = 5V, RBIAS = 1731Ω. Illustrates compression characteristics.

Figure 68: OIP3 vs. Frequency for Various Temperatures: Plots OIP3 (dBm) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 5V, IDQ = 85mA, RBIAS = 1731Ω. Multiple curves represent temperatures from -55°C to +125°C. OIP3 is generally high and decreases at higher frequencies.

Figure 69: OIP3 vs. Frequency for Various Supply Voltages: Displays OIP3 (dBm) vs. Frequency (GHz) from 1GHz to 20GHz for IDQ = 55mA. Curves show various supply voltages from 2.5V to 6V. OIP3 is generally high and shows minor variations with voltage.

Figure 70: OIP3 vs. Frequency for Various IDQ Values: Plots OIP3 (dBm) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 3.3V. Curves show various IDQ values from 30mA to 70mA. OIP3 is generally high and shows minor variations with IDQ.

Figure 71: OIP2 vs. Frequency for Various Temperatures: Shows OIP2 (dBm) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 3.3V, IDQ = 55mA, RBIAS = 1540Ω. Multiple curves represent temperatures from -55°C to +125°C. OIP2 is generally high, especially at lower frequencies.

Figure 72: OIP3 vs. Frequency for Various Supply Voltages: Displays OIP3 (dBm) vs. Frequency (GHz) from 1GHz to 20GHz for IDQ = 85mA. Curves show various supply voltages from 4V to 6V. OIP3 is generally high and shows minor variations with voltage.

Figure 73: OIP3 vs. Frequency for Various IDQ Values: Plots OIP3 (dBm) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 5V. Curves show various IDQ values from 50mA to 100mA. OIP3 is generally high and shows minor variations with IDQ.

Figure 74: OIP2 vs. Frequency for Various Temperatures: Shows OIP2 (dBm) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 5V, IDQ = 85mA, RBIAS = 1731Ω. Multiple curves represent temperatures from -55°C to +125°C. OIP2 is generally high, especially at lower frequencies.

Figure 75: OIP2 vs. Frequency for Various Supply Voltages: Displays OIP2 (dBm) vs. Frequency (GHz) from 1GHz to 20GHz for IDQ = 55mA. Curves show various supply voltages from 2.5V to 6V. OIP2 is generally high, especially at lower frequencies.

Figure 76: OIP2 vs. Frequency for Various IDQ Values: Plots OIP2 (dBm) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 3.3V. Curves show various IDQ values from 30mA to 70mA. OIP2 is generally high, especially at lower frequencies.

Figure 77: Output IM3 vs POUT per Tone for Various Frequencies: Shows Output IM3 (dBc) vs. POUT per Tone (dBm) for VDD = 3.3V, RBIAS = 1540Ω, at different frequencies (2GHz to 18GHz). Illustrates third-order intermodulation distortion.

Figure 78: OIP2 vs. Frequency for Various Supply Voltages: Displays OIP2 (dBm) vs. Frequency (GHz) from 1GHz to 20GHz for IDQ = 85mA. Curves show various supply voltages from 4V to 6V. OIP2 is generally high, especially at lower frequencies.

Figure 79: OIP2 vs. Frequency for Various IDQ Values: Plots OIP2 (dBm) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 5V. Curves show various IDQ values from 50mA to 100mA. OIP2 is generally high, especially at lower frequencies.

Figure 80: Output IM3 vs POUT per Tone for Various Frequencies: Shows Output IM3 (dBc) vs. POUT per Tone (dBm) for VDD = 5V, RBIAS = 1731Ω, at different frequencies (2GHz to 18GHz). Illustrates third-order intermodulation distortion.

Figure 81: Residual Phase Noise vs. Frequency at 5GHz: Plots Residual Phase Noise (dBc/Hz) vs. Frequency (Hz) at 5GHz for VDD = 5V, IDQ = 85mA, RBIAS = 1731Ω. Curves represent different POUT values (10dBm, OP1dB, PSAT).

Figure 82: Residual Phase Noise vs. Frequency at 15GHz: Plots Residual Phase Noise (dBc/Hz) vs. Frequency (Hz) at 15GHz for VDD = 5V, IDQ = 85mA, RBIAS = 1731Ω. Curves represent different POUT values (10dBm, OP1dB, PSAT).

Figure 83: IDQ vs. RBIAS for Various Supply Voltages: Shows IDQ (mA) vs. RBIAS (kΩ) for supply voltages from 2.5V to 6V. IDQ increases with decreasing RBIAS.

Figure 84: Residual Phase Noise vs. Frequency at 10GHz: Plots Residual Phase Noise (dBc/Hz) vs. Frequency (Hz) at 10GHz for VDD = 5V, IDQ = 85mA, RBIAS = 1731Ω. Curves represent different POUT values (10dBm, OP1dB, PSAT).

Figure 85: Overdrive Recovery Time vs. Pulsed PIN at 8GHz: Shows Overdrive Recovery Time (ns) vs. Pulsed PIN (dBm) at 8GHz for VDD = 5V, IDQ = 85mA, RBIAS = 1731Ω. Recovery is to within 90% of small signal gain value.

Figure 86: IDQ vs. RBIAS for Various Supply Voltages: Shows IDQ (mA) vs. RBIAS (kΩ) for supply voltages from 4V to 6V. IDQ increases with decreasing RBIAS.

Figure 87: IDQ vs. Supply Voltage: Plots IDQ (mA) vs. Supply Voltage (V) for RBIAS = 1540Ω. IDQ increases with supply voltage.

Figure 88: IDQ and IENBL vs. VENBL: Shows IDQ (mA) and IENBL (mA) vs. VENBL (V) for RBIAS = 1540Ω. Illustrates the enable/disable function and associated currents.

Figure 89: VTEMP vs. Temperature for Various Frequencies at OP1dB: Displays VTEMP (V) vs. Temperature (°C) for VDD = 3.3V, IDQ = 55mA, RBIAS = 1540Ω, at different frequencies. VTEMP shows a linear increase with temperature.

Figure 90: IDQ vs. Supply Voltage: Plots IDQ (mA) vs. Supply Voltage (V) for RBIAS = 1731Ω. IDQ increases with supply voltage.

Figure 91: IDQ and IENBL vs. VENBL: Shows IDQ (mA) and IENBL (mA) vs. VENBL (V) for RBIAS = 1731Ω. Illustrates the enable/disable function and associated currents.

Figure 92: VTEMP vs. Temperature for Various Frequencies at OP1dB: Displays VTEMP (V) vs. Temperature (°C) for VDD = 5V, IDQ = 85mA, RBIAS = 1731Ω, at different frequencies. VTEMP shows a linear increase with temperature.

Figure 93: On Response of the RFOUT Envelope Timing When the VENBL Pin Is Toggled: Shows oscilloscope traces of VENBL and RFOUT envelope timing during an enable transition.

Figure 94: Off Response of the RFOUT Envelope Timing When the VENBL Pin Is Toggled: Shows oscilloscope traces of VENBL and RFOUT envelope timing during a disable transition.

Amplifier Off State (VENBL = 0V)

Figure 95: Isolation and Return Loss vs. Frequency: Plots Isolation, S11, and S22 (dB) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 3.3V. Shows isolation is generally below -15dB and return loss is below -8dB.

Figure 96: Isolation vs. Frequency for Various Temperatures: Displays Isolation (dB) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 3.3V. Multiple curves represent temperatures from -55°C to +125°C. Isolation is generally below -15dB.

Figure 97: Input Return Loss vs. Frequency for Various Temperatures: Shows Input Return Loss (dB) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 3.3V. Multiple curves represent temperatures from -55°C to +125°C. Return loss is generally below -10dB.

Figure 98: Output Return Loss vs. Frequency for Various Temperatures: Displays Output Return Loss (dB) vs. Frequency (GHz) from 1GHz to 20GHz for VDD = 3.3V. Multiple curves represent temperatures from -55°C to +125°C. Return loss is generally below -10dB.

Theory of Operation

The ADL8124 is a wideband LNA with integrated AC-coupling capacitors, a bias inductor, a temperature sensor, and an enable or disable function. It has AC-coupled, single-ended input and output ports with nominal 50Ω impedance over the 1GHz to 20GHz range, requiring no external matching components. The RBIAS resistor controls IDQ. The integrated temperature sensor provides a voltage proportional to die temperature on the VTEMP pin. The VENBL pin enables or disables the device based on its digital signal level.

Simplified Architecture: The simplified architecture diagram shows the main blocks including RBIAS, VDD, VTEMP, VENBL, GND, RFIN, RFOUT, and the internal temperature sensor and amplifier core.

Applications Information

The ADL8124 connects directly to a 3.3V supply at the VDD pin; 5V operation is also supported. A 100pF power-supply decoupling capacitor is recommended. The IDQ is set by a resistor (R3) between RBIAS and VDD; a default value of 1540Ω results in 55mA IDQ. The RBIAS pin draws a current that varies with its value and should not be left open. The VTEMP pin outputs a voltage proportional to die temperature, requiring buffering due to its high output resistance. The VENBL pin controls power up/down: connect to supply to enable, and to ground to disable.

Typical Application Circuit: The circuit diagram shows the ADL8124 connected with a 3.3V supply, a 0.1µF decoupling capacitor (C1), and a 1.54kΩ resistor (R3) for setting IDQ.

Recommended Bias Sequencing

For safe operation, DC and RF power sequencing is critical. Power-up sequence: 1. Set VDD to 3.3V. 2. Set VENBL to VDD. 3. Apply RF input signal. Power-down is the reverse sequence. Tables provide recommended RBIAS resistor values for various VDD and IDQ choices.

RBIAS (Ω)	IDQ (mA)	IDQ_AMP (mA)	IRBIAS (mA)
5540	30	29.6	0.4
2836	40	39.2	8
1836	50	48.8	1.2
1540	55	53.6	1.4
1322	60	58.4	1.6
1015	70	68	2

RBIAS (Ω)	IDQ (mA)	IDQ_AMP (mA)	IRBIAS (mA)
5539	50	49.3	0.7
3531	60	58.8	1.2
2532	70	68.5	1.5
1945	80	78	2
1731	85	82.8	2.2
1555	90	87.6	2.4
1275	100	97.2	2.8

RBIAS (Ω)	VDD (V)	IDQ_AMP (mA)	IRBIAS (mA)
776	2.5	53.3	1.7
1222	3	53.4	1.6
1540	3.3	53.6	1.4
2456	4	53.8	1.2
4312	5	54.1	0.9
7780	6	54.4	0.6

RBIAS (Ω)	VDD (V)	IDQ_AMP (mA)	IRBIAS (mA)
1103	4	82.6	2.4
1399	4.5	82.7	2.3
1731	5	82.8	2.2
2102	5.5	82.9	2.1
2534	6	83	2

Recommended Power Management Circuit

A recommended power management circuit uses an LT8607 step-down regulator to provide 4.5V from a 12V input, followed by an LT3042 low dropout (LDO) linear regulator for a low-noise 3.3V output. The LT8607 input range can be up to 42V. The LT8607's output voltage is set by resistors R2 and R3. Its switching frequency is set by R1. The LT3042's output voltage is set by R4. Resistors R7 and R8 are used for the power-good (PG) signal. The LT8607 can source up to 750mA, and the LT3042 up to 200mA. Higher current regulators (LT8608/LT8609) and a higher current LDO (LT3045) are mentioned as alternatives.

LDO VOUT (V)	R4 (kΩ)	R7 (kΩ)	R8 (kΩ)
3.6	36.5	332	30.1
3.3	33.1	301	30.1
3	30.1	267	30.1

Recommended Power Management Circuit Diagram: The diagram shows the LT8607 step-down regulator connected to an LT3042 LDO regulator. Input voltage (VIN) is applied to the LT8607, which outputs VOUTREG. This is then fed into the LT3042, which outputs 3.3V. Components like C1, C2, C3, C4, C5, C6, C7, C8, L1, R1, R2, R3, R4, R6, R7, R8 are shown with their values.

Outline Dimensions

Package Drawing Option	Package Type	Package Description
CP-8-30	LFCSP	8-Lead Lead Frame Chip Scale Package

For the latest package outline information and land patterns (footprints), go to Package Index.

Ordering Guide

Model	Temperature Range	Package Description	Packing Quantity	Package Option
ADL8124ACPZN	-55°C to +125°C	8-Lead LFCSP, 2mm × 2mm × 0.85mm	Tape, 1	CP-8-30
ADL8124ACPZN-R7	-55°C to +125°C	8-Lead LFCSP, 2mm × 2mm × 0.85mm	Reel, 3000	CP-8-30

1 Z = RoHS Compliant Part.

2 The lead finish of the ADL8124ACPZN and ADL8124ACPZN-R7 is nickel palladium gold.

	Analog Devices ADL8107: GaAs, pHEMT, MMIC Low Noise Amplifier (6-18 GHz) Datasheet for the Analog Devices ADL8107, a GaAs, pHEMT, MMIC low noise amplifier operating from 6 GHz to 18 GHz. Features include high gain, low noise figure, and excellent linearity.
	Analog Devices ADL8107 Evaluation Board User Guide: 6-18 GHz LNA User guide for the Analog Devices ADL8107-EVALZ evaluation board, featuring the ADL8107 GaAs pHEMT MMIC low noise amplifier operating from 6 GHz to 18 GHz. Includes features, setup, schematics, and bill of materials.
	AD8041: 160 MHz Rail-to-Rail Amplifier with Disable \| Analog Devices Datasheet Datasheet for the Analog Devices AD8041, a low power, high-speed, 160 MHz rail-to-rail voltage feedback amplifier with disable functionality. Features include wide bandwidth, fast settling, low distortion, and single-supply operation. Includes detailed specifications, performance characteristics, and application circuits.
	Understanding Current Feedback (CFB) Operational Amplifiers This tutorial provides a detailed explanation of current feedback (CFB) operational amplifiers, comparing them to voltage feedback (VFB) amplifiers and outlining their advantages, characteristics, and applications.
	ADRF5051 Silicon SP4T Switch Data Sheet Data sheet for the ADRF5051, a nonreflective Silicon SP4T Switch operating from 9kHz to 20GHz, manufactured by Analog Devices. Includes features, specifications, applications, and performance characteristics.
	Analog Devices AD7386-4/AD7387-4/AD7388-4 SAR ADC Datasheet Datasheet for Analog Devices AD7386-4, AD7387-4, and AD7388-4, quad, simultaneous sampling, high-speed SAR ADCs. Features include 16/14/12-bit resolution, 4 MSPS throughput, on-chip oversampling, and low power consumption.
	Analog Devices RH27C Precision Operational Amplifier Datasheet Explore the Analog Devices RH27C, a precision operational amplifier offering low noise, high precision, and excellent speed for military instrumentation and other demanding applications. View specifications, ratings, and package details.
	Analog Devices RF, Microwave, and Millimeter Wave Products Selection Guide 2021 Explore Analog Devices' comprehensive 2021 selection guide for RF, microwave, and millimeter wave products. Discover a vast range of ICs covering the entire RF signal chain, from DC to over 100 GHz, designed for diverse applications in communications, test and measurement, industrial, commercial, and military/aerospace markets.