Diodes DML3010ALFDS Single-Channel Smart Load Switch
Note: The DML3010ALFDS is not recommended for new designs. Please use the DML2010LFDS.
Description
The DML3010ALFDS load switch provides a component and area-reducing solution for efficient power domain switching. It offers integrated control functionality with ultra-low on-resistance, system safeguards, and monitoring via fault protection and power-good signaling. This cost-effective solution is ideal for power-management and hot-swap applications requiring low power consumption in a small footprint.
Features and Benefits
- Advanced Controller with Charge Pump
- Integrated N-Channel MOSFET with Ultra-Low RON
- Input-Voltage Range: 0.5V to 20V
- Power-Good Signal
- Thermal Shutdown
- VCC Undervoltage Lockout
- Short-Circuit Protection
- Extremely Low Standby Current
- Load Bleed (Quick Discharge)
- Totally Lead-Free & Fully RoHS Compliant
- Halogen and Antimony Free. "Green" Device
- For automotive applications requiring specific change control (e.g., parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact Diodes or your local representative.
Applications
- Portable electronics and systems
- Notebook and tablet computers
- Telecom, networking, medical, and industrial equipment
- Set-top boxes, servers, and gateways
- Hot-swap devices and peripheral ports
Mechanical Data
- Package: V-DFN2020-8
- Package Material: Molded Plastic, "Green" Molding Compound.
- UL Flammability Classification Rating: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4
- Weight: 0.011 grams (Approximate)
Pin Description:
| Pin Number | Pin Name | Pin Function |
|---|---|---|
| 1, 9 | VIN | Drain of internal MOSFET, pin 1 must connect to pin 9. |
| 2 | EN | Active-high digital input used to turn on the MOSFET; pin has an internal pulldown resistor to GND. |
| 3 | VCC | Supply voltage to controller (3.0V to 5.5V). |
| 4 | GND | Controller ground. |
| 5 | BLEED | Load bleed connection, must be tied to VOUT through a resistor ≤ 1kΩ. |
| 6 | PG | Active-high, open-drain output that indicates when the gate of the MOSFET is fully charged. Requires an external pullup resistor ≥ 1kΩ to an external voltage source; tie to GND if not used. |
| 7, 8 | VOUT | Source of internal MOSFET connected to load. |
Function Block Diagram
The device integrates control logic, gate drive, thermal undervoltage & short-circuit protection, bandgap, biases, and charge pump, all connected to VCC, EN, PG, VIN, GND, BLEED, and VOUT pins.
Absolute Maximum Rating
| Parameter | Rating |
|---|---|
| VIN, BLEED, VOUT to GND | -0.3V to 24V |
| EN, VCC, PG to GND | -0.3V to 6V |
| IMAX_DC | 10.5A |
| Storage Temperature (TS) | -65°C to +150°C |
Recommended Operating Ranges
| Parameter | Rating |
|---|---|
| Supply Voltage (VCC) | 3V to 5.5V |
| Input Voltage (VIN) | 0.5V to 20V |
| Ambient Temperature (TA) | -40°C to +85°C |
| Junction Temperature (TJ) | -40°C to +125°C |
Electrical Characteristics
(TA = +25°C, VVCC = 3.3V, VVIN = 5V = VTERM, CVIN = 1μF, CVOUT = 0.1μF, CVCC = 1μF, CSR = 1nF, unless otherwise specified.)
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit | |
|---|---|---|---|---|---|---|---|
| VIN | Input Voltage | VEN = VCC = 3V, VIN = 20V | — | 20 | — | V | |
| VCC | Supply Voltage | — | 3.0 | — | 5.5 | V | |
| IDYN | VCC Dynamic Supply Current | VEN = VCC = 3V, VIN = 20V | — | 150 | 290 | μA | |
| ISTBY | VCC Shutdown Supply Current | VEN = VCC = 5.5V, VIN = 1.8V | — | 200 | 390 | μA | |
| VENH | EN High-Level Voltage | VCC = 3V, VIN = 20V | 0.1 | — | 1 | μA | |
| VENL | EN Low-Level Voltage | VCC = 5.5V, VIN = 1.8V | 0.1 | — | 2 | μA | |
| RBLEED | Bleed Resistance | VCC = 3V, VIN = 1.8V | — | 90 | 120 | 180 | Ω |
| IBLEED | Bleed Pin Leakage Current | VCC = 5.5V, VIN = 1.8V | — | 70 | 100 | 130 | Ω |
| VPGL | PG Output Low Voltage | VCC = 3V, ISINK = 5mA | — | 0.2 | — | V | |
| IPG | PG Output Leakage Current | VCC = 3V, VTERM = 3.3V | — | 100 | — | nA | |
| RON | Switch On-State Resistance | VCC = 3.3V, VIN = 1.8V | 10 | 12.5 | MΩ | ||
| ILEAK | Input Shutdown Supply Current | VCC = 3.3V, VIN = 20V | — | 32 | — | μA | |
| RPDEN | EN Pulldown Resistance | VEN = 0, VIN = 20V | 70 | 100 | 130 | kΩ |
Fault Protection
| Symbol | Parameter | Conditions | Typ | Unit | ||
|---|---|---|---|---|---|---|
| TOT | Thermal Shutdown Threshold | VCC = 3V to 5.5V | +145 | °C | ||
| TOT | Thermal Shutdown Hysteresis | VCC = 3V to 5.5V | +20 | °C | ||
| VUVLO | VCC Lockout Threshold | — | 2.3 | 2.55 | 2.8 | V |
| VUVLO | VCC Lockout Hysteresis | — | 200 | mV | ||
| VSCP | Short-Circuit Protection Threshold | VCC = 3.3V, VIN = 0.5V | 140 | 240 | 350 | mV |
| VSCP | Short-Circuit Protection Threshold | VCC = 3.3V, VIN = 1.2V to 12V | 120 | 240 | 500 | mV |
| VSCP | Short-Circuit Protection Threshold | VCC = 3.3V, VIN = 20V | 100 | 250 | 500 | mV |
Switching Characteristics
(TA = +25°C, VTERM = VVCC = 5V, RPG = 100kΩ, ROUT = 10Ω, CVIN = 1μF, CVOUT = 0.1μF, CVCC = 1μF, unless otherwise specified.)
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| tON | Output Turn-On Delay time | VIN = 1.8V, VCC = 3.3V | 100 | 350 | 600 | μs |
| tON | Output Turn-On Delay time | VIN = 1.8V, VCC = 5V | 60 | 220 | 400 | μs |
| tOFF | Output Turn-Off Delay time | VCC = 3.3V | 1 | 2 | ms | |
| tOFF | Output Turn-Off Delay time | VCC = 5V | 1 | 2 | ms | |
| tPGON | Power-Good Turn-On Time | VCC = 3.3V | 0.3 | 0.65 | 1 | ms |
| tPGON | Power-Good Turn-On Time | VCC = 5V | 0.3 | 0.55 | 1 | ms |
| tPGOFF | Power-Good Turn-Off Time | VCC = 3.3V | — | 20 | 100 | ns |
| tPGOFF | Power-Good Turn-Off Time | VCC = 5V | — | 15 | 100 | ns |
| SR | Output Slew Rate | VCC = 3.3V | 1 | 10 | 20 | kV/s |
| SR | Output Slew Rate | VCC = 5V | 1 | 10 | 20 | kV/s |
Timing Diagram:
The timing diagram illustrates the relationship between the Enable (EN) signal, Output Voltage (VOUT), and Power-Good (PG) signal during turn-on and turn-off events, showing parameters like turn-on delay (tON), turn-off delay (tOFF), and power-good turn-on/off times (tPGON, tPGOFF).
Performance Characteristics
(TA = +25°C, unless otherwise specified.)
Graphs display the following characteristics:
- Supply Dynamic Current vs. Input Voltage
- Supply Dynamic Current vs. Supply Voltage
- Bleed Resistance vs. Supply Voltage
- Bleed Leakage Current vs. Input Voltage
- ON Resistance vs. Input Voltage
Additional graphs show Turn ON and Turn OFF responses under various input voltage (VIN) and supply voltage (VCC) conditions with a load resistance (RL) of 10Ω.
Application Information
General Description
The DML3010ALFDS is a single-channel load switch featuring a PG indicator in an 8-pin V-DFN2020-8 (Type N) package. It operates with an input-voltage range of 0.5V to 20V and supports a maximum continuous current of 10.5A. The 10mΩ on-resistance minimizes voltage drop and power loss. The integrated PG indicator aids in power sequencing, and the device has low leakage current for standby applications. A 100Ω on-chip resistor on the BLEED pin facilitates quick output discharge when the switch is disabled.
Enable Control
The MOSFET is enabled in an active-high configuration. When the VCC supply has adequate voltage and the EN pin is high, the MOSFET enables. When the EN pin is low, the MOSFET is disabled. An internal pulldown resistor on the EN pin ensures the MOSFET is disabled when not driven.
Power Sequencing
The DML3010ALFDS operates with fixed power sequences. Recommended sequences are:
- VCC → VIN → VEN
- VIN → VCC → VEN
Load Bleed (Quick Discharge)
An internal bleed discharge device enables when the MOSFET is disabled to discharge the load to ground. The MOSFET and bleed device are never active simultaneously. The BLEED pin connects to VOUT directly or via an external resistor (REXT ≤ 1kΩ) to increase bleed resistance. The maximum continuous power dissipated across RBLEED is 0.4W; REXT can be used to reduce this power dissipation.
Power Good
The PG pin is an active-high, open-drain output indicating when the MOSFET gate is driven high and the switch is on with low on-resistance. It requires an external pullup resistor (RPG ≥ 1kΩ) to an external voltage source (VTERM) compatible with connected device input levels. Table 1 shows typical PG turn-on time values.
Table 1. PG Turn-On Time
| VVIN = 20V | VVIN = 12V | VVIN = 5V | VVIN = 3.3V | VVIN = 1.8V |
|---|---|---|---|---|
| VCC = 5V, CL = 0.1μF, RL = 10Ω, RPG = 10kΩ, +25°C | ||||
| 1.16 | 0.88 | 0.66 | 0.6 | 0.55 |
If the PG feature is not used, the PG pin should be tied to GND.
Short-Circuit Protection
The device includes short-circuit protection to safeguard against high-current events, such as output shorted to ground. This protection is active when the MOSFET gate is fully charged. It monitors the voltage difference between VIN and BLEED pins. The BLEED pin must be connected to VOUT (directly or via REXT ≤ 1kΩ) for this monitoring to function. If the voltage drop across the MOSFET exceeds the threshold, the MOSFET turns off immediately, and the load bleed is activated. The short-circuit protection threshold is determined by the MOSFET's expected on-resistance.
Thermal Shutdown
The DML3010ALFDS features thermal shutdown protection against excessive temperatures. If the junction temperature exceeds the threshold, the MOSFET turns off, and the load bleed is active. The device operates with normal output turn-on delay and slew rate when the junction temperature returns to normal levels.
Undervoltage Lockout
An undervoltage lockout feature prevents the MOSFET from operating when the VCC voltage is below a specified threshold. This helps reduce standby current.
PCB Layout Consideration
- Place input/output capacitors (CVIN and CVOUT) as close as possible to the VIN and VOUT pins.
- The power traces which carry high current (VIN, VOUT, GND) should be short, wide, and directly to minimize parasitic inductance.
- Connect VIN and VOUT pins to the power ground plane.
- Place CVCC capacitor near the VCC pin.
- Connect the signal grounds to the GND pin, and keep signal connections from the PG pin to power ground behind the input or output capacitors.
- For better power dissipation, vias are recommended to connect the exposed pad area to a large copper polygon on the other side of the printed circuit board. The copper polygons and exposed pad shall be connected to VIN pin in the printed circuit board.
Package Outline Dimensions
Refer to the V-DFN2020-8 (Type N) package outline dimensions for detailed specifications. This includes dimensions for A, A1, A3, b, D, D2, E, E2, e, k, L, and Z, all in millimeters.
Suggested Pad Layout
Refer to the V-DFN2020-8 (Type N) suggested pad layout for recommended land patterns. This includes dimensions for C, G, G1, X, X1, X2, X3, Y, Y1, Y2, and Y3, all in millimeters.
Important Notice
Diodes Incorporated and its subsidiaries make no warranty of any kind, express or implied, with regards to any information contained in this document. This document is for informational purposes only and illustrates the operation of Diodes' products. Customers and users are responsible for selecting appropriate products, evaluating suitability, ensuring compliance with legal and regulatory requirements, and designing with appropriate safeguards. Diodes assumes no liability for application-related information, support, or feedback. Products are provided subject to Conditions of Sale. Diodes' products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under applicable laws and regulations. While efforts have been made to ensure accuracy, this document may contain technical inaccuracies, omissions, and typographical errors. Diodes reserves the right to make modifications without further notice. This document is written in English, but the English version is the final and determinative format. Unauthorized copying, modification, distribution, transmission, display, or other use of this document is prohibited.
